IRF8304MPbF DirectFET Power MOSFET RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max 20V max 1.7m@ 10V 2.4m@ 4.5V l Ultra Low Package Inductance l Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 28nC 7.9nC 4.2nC 39nC 21nC 1.8V l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested (R) l Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MT MX DirectFET(R) ISOMETRIC MX MP Description The IRF8304MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET(R) packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET (R) package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET(R) package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Base Part number Package Type IRF8304MPbF DirectFET MX Standard Pack Form Quantity Tape and Reel 4800 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Typical RDS(on) (m) VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR 6 g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f h ID = 28A 5 4 3 T J = 125C 2 1 T J = 25C 0 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 1 www.irf.com (c) 2014 International Rectifier VGS, Gate-to-Source Voltage (V) VDS Orderable Part Number IRF8304MTRPbF Max. Units 30 20 28 22 170 220 190 22 V A mJ A 14.0 ID= 22A 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.75mH, RG = 25, IAS = 22A. Submit Datasheet Feedback February 17, 2014 IRF8304MPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. VGS = 0V, ID = 250A --- mV/C Reference to 25C, ID = 1mA 2.2 m VGS = 10V, ID = 28A VGS = 4.5V, ID = 22A 3.2 VDS = VGS, ID = 100A 2.35 V --- mV/C 1.0 A VDS = 24V, VGS = 0V Drain-to-Source Breakdown Voltage 30 --- VDSS/TJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 22 1.7 Gate Threshold Voltage Gate Threshold Voltage Coefficient --- 1.35 --- 2.4 1.8 -6.1 --- --- --- --- Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance --- --- 150 --- --- --- 100 -100 --- Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 28 8.3 42 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- --- 4.2 7.9 7.6 --- --- --- Output Charge --- --- 12.1 21 --- --- Gate Resistance Turn-On Delay Time Rise Time --- --- --- 1.3 16 22 2.2 --- --- Turn-Off Delay Time Fall Time --- --- 19 13 --- --- Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 4700 960 420 --- --- --- VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Conditions Typ. Max. Units BVDSS --- V i i nA VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V S VDS = 15V, ID = 22A nC VDS = 15V VGS = 4.5V 150 ID = 22A See Fig. 15 nC VDS = 16V, VGS = 0V ns VDD = 15V, VGS = 4.5V ID = 22A i RG = 1.8 See Fig. 17 VGS = 0V pF VDS = 15V = 1.0MHz Diode Characteristics Min. Typ. Max. Units IS Continuous Source Current (Body Diode) Parameter --- --- 130 ISM Pulsed Source Current (Body Diode) Diode Forward Voltage --- --- 220 --- 0.77 1.0 V Reverse Recovery Time Reverse Recovery Charge --- --- 24 39 36 59 ns nC g VSD trr Qrr A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 260A/s i i Notes: Pulse width 400s; duty cycle 2%. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 IRF8304MPbF Absolute Maximum Ratings Power Dissipation e Power Dissipation e Power Dissipation f PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Max. Units 2.8 1.8 100 270 -40 to + 150 W Parameter Peak Soldering Temperature Operating Junction and Storage Temperature Range C Thermal Resistance Parameter el jl kl fl RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units --- 12.5 20 --- 1.0 45 --- --- 1.2 --- C/W 0.022 W/C Thermal Response ( Z thJA ) 100 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 J 0.1 R1 R1 J 1 R2 R2 R3 R3 Ri (C/W) R4 R4 A 2 1 2 3 3 4 A 4 Ci= i/Ri Ci= i/Ri 0.01 0.001 1E-006 0.0001 0.000312 5.1963 0.040534 21.489 1.0378 17.005 46 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 i (sec) 1.3216 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized R is measured at TJ of approximately 90C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). 3 Mounted to a PCB with small clip heatsink (still air) www.irf.com (c) 2014 International Rectifier Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Submit Datasheet Feedback February 17, 2014 IRF8304MPbF 1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 1 2.3V 0.1 BOTTOM 10 2.3V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 Tj = 150C 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig 5. Typical Output Characteristics 1000 2.0 VDS = 15V 60s PULSE WIDTH ID = 28A Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 T J = 150C T J = 25C T J = -40C 10 1 0.1 V GS = 10V V GS = 4.5V 1.5 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 7 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Typical RDS(on) ( m) 10000 Ciss Coss Crss T J = 25C Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V 6 C oss = C ds + C gd 1000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 5 4 3 2 1 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 www.irf.com (c) 2014 International Rectifier 0 50 100 150 200 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage Submit Datasheet Feedback February 17, 2014 IRF8304MPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150C 100 OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 25C T J = -40C 10 1 100sec 10 1msec 10msec 1 0.1 VGS = 0V DC T A = 25C T J = 150C Single Pulse 0 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.01 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) 140 120 100 80 60 40 20 100 100.00 2.5 2.0 1.5 125 ID = 100A ID = 150A ID = 250A 1.0 ID = 1.0mA ID = 1.0A 0.5 0 75 10.00 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 50 1.00 Fig11. Maximum Safe Operating Area 180 25 0.10 VDS, Drain-to-Source Voltage (V) -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) T C , Case Temperature (C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 800 ID 2.1A 2.8A BOTTOM 22A 700 TOP 600 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 IRF8304MPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS 15V D.U.T V RGSG 20V DRIVER L VDS tp + - VDD IAS A I AS 0.01 tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit VDS V GS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width 1 s Duty Factor 0.1 % 10% VGS td(on) Fig 17a. Switching Time Test Circuit 6 www.irf.com (c) 2014 International Rectifier tr t d(off) tf Fig 17b. Switching Time Waveforms Submit Datasheet Feedback February 17, 2014 IRF8304MPbF Driver Gate Drive D.U.T P.W. + + - RG * * * * * *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period V DD ** + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S G S D 7 www.irf.com (c) 2014 International Rectifier D Submit Datasheet Feedback February 17, 2014 IRF8304MPbF DirectFET(R) Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE MIN MAX A 6.25 6.35 B 4.80 5.05 C 3.85 3.95 D 0.35 0.45 0.68 0.72 E F 0.68 0.72 1.38 1.42 G 0.80 0.84 H J 0.38 0.42 K 0.88 1.02 L 2.28 2.42 M 0.59 0.70 R 0.03 0.08 P 0.08 0.17 IMPERIAL MAX MIN 0.250 0.246 0.199 0.189 0.156 0.152 0.018 0.014 0.028 0.027 0.028 0.027 0.054 0.056 0.031 0.033 0.017 0.015 0.040 0.035 0.095 0.090 0.028 0.023 0.001 0.003 0.007 0.003 Dimensions are shown in millimeters (inches) DirectFET(R) Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 IRF8304MPbF DirectFET(R) Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF8304MTRPBF). For 1000 parts on 7" reel, order IRF8304MTR1PBF CODE A B C D E F G H REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN MAX MIN MAX 330 N.C 12.992 N.C 20.2 N.C 0.795 N.C 12.8 13.2 0.504 0.520 1.5 N.C 0.059 N.C 100.0 N.C 3.937 N.C N.C 18.4 N.C 0.724 12.4 14.4 0.488 0.567 11.9 15.4 0.469 0.606 Revision History Date 2/17/2014 NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 3.90 0.161 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.201 5.10 0.209 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Comments * Added the orgering information table, on page 1. * Updated data sheet with new IR corporate template. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRF8304MTRPBF