DirectFET® Power MOSFET
Description
The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 22A.
Notes:
DirectFET® ISOMETRIC
MX
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
lIdeal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
SQ SX ST MQ MX MT MP
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
Typical RDS(on) (mΩ)
ID = 28A
TJ = 25°C
TJ = 125°C
VDSS VGS RDS(on) RDS(on)
30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V
Absolute Maximum Ratin
s
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
f
IDM Pulsed Drain Current
g
EAS Single Pulse Avalanche Energy
h
mJ
IAR Avalanche Current
g
A
Max.
22
170
220
±20
30
28
190
22
0 1020304050607080
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 22A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
28nC 7.9nC 4.2nC 39nC 21nC 1.8V
IRF8304MPbF
1www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014
Orderable Part Number
Form Quantity
IRF8304MPbF DirectFET MX Tape and Reel 4800 IRF8304MTRPbF
Base Part number Package Type Standard Pack