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c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C
Medium power transistor (32V, 2A)
2SD1758 / 2SD1862
Features Dimensions (Units : mm)
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Absolute maximum ratings (Ta=25C)
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 Single pulse, PW=20ms
2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
Parameter Symbol Limits Unit
V
CBO
40 V
V
CEO
32 V
V
EBO
5V
I
C
2 A (DC)
2.5 A (Pulse)
1
Tj 150 °C
Tstg 55 to +150 °C
P
C
1W
2
10 W (TC=25°C)
Electrical characteristics (Ta=25C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
40
32
5
0.5
100
30
1
1
0.8
390
VI
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=20V
V
EB
=4V
I
C
/I
B
=2A/0.2A
V
CE
=5V, I
E
=−50mA, f=100MHz
V
CE
=3V, I
C
=0.5A
V
CB
=10V, I
E
=0A, f=1MHz
V
V
μA
μA
V
MHz
pF
Typ. Max. Unit Conditions
120
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
0.1
+0.2
0.1
+0.2
+0.3
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.55±0.1
9.5±0.5
5.5 1.5±0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1 C0.5
(3)
(2)
(1)
0.9
1.0
6.8
±
0.2 2.5
±
0.2
1.05 0.45
±
0.1
2.54 2.54
0.5
±
0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SD1758 2SD1862
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.04 - Rev.C
Data Sheet 2SD1758 / 2SD1862
Packaging specifications and hFE
Type hFE
TL
2500
TV2
2500
2SD1758
2SD1862
QR
QR
Package Taping
Code
Basic ordering
unit (pieces)
hFE values are classified as follows :
Item
hFE
R
180 to 390
Q
120 to 270
Electrical characteristic curves
COLLECTOR CURRENT : IC
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
02
.0
1000
2000
1
200
500
100
20
50
10
2
5
0.2 0.60.4 0.8 1.0 1.2 1.4 1.6 1.8
Ta=25°C
V
CE
=3V
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.2 Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0.4 0.8 1.2 1.6 2.
0
0
Ta=25°C
I
B
=0A
3.0mA 2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collecto
r
current
5
500
10 20 50 100 200 500 1A 2A
200
100
50
20
Ta=25°C
V
CE
=3V
1V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV
)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
500
20
200
100
50
5 10 20 50 100 200 500 1A 2A
Ta=25°C
10
20
I
C
/I
B
=50
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
5
1
2
0.2
0.5
0.1
10 20 50 100 200 500 1A 2A
Ta=25°C
I
C
/I
B
=10
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Transition frequency vs. emitt
er
current
-21
200
510 20 50100200 500 1
A
500
1000
100
50
20
Ta=25°C
V
CE
=5V
0.5
200
10
500
1000
100
20
50
12 51020
Ta=25°C
f
=
1MHz
I
E
=0A
I
C
=0A
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
EMITTER TO BASE VOLTAGE : V
EB
(V
)
COLLECTOR OUTPUT CAPACITANCE : Cob (p
F)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.7 Collector output capacitance vs
.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cib
Cob
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.8 Safe operating area
5
0.1 50
2
0.2
0.5
1
0.1
0.05
0.2 0.5 1 2 5 10 20
0.01
0.02
(2SD1758)
P
W
=100ms
T
C
=25°C
Single
nonrepetitive
pulse
Ic Max
DC
Ic Max Pulse
Ta=25°C
Single
nonrepetitive
pulse
P
W
=10ms
P
W
=
100ms
0.2 0.5 1 2 5 10 20 5
2
1
0.1
0.2
0.5
0.05
COLLECTOR TO EMITTER VOLTAGE : VCE (V
C
Fig.9 Safe operating area
(2SD1862)
R1010
A
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