2N6422
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6420 2N6421 2N6423 UNITS
Collector-Base Voltage VCBO 250 375 500 V
Collector-Emitter Voltage VCEO 175 250 300 V
Emitter-Base Voltage VEBO 6.0 6.0 6.0 V
Continuous Collector Current IC 1.0 2.0 2.0 A
Peak Collector Current ICM 5.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 35 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 5.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=225V, VBE=1.5V (2N6420) 1.0 mA
ICEV V
CE=340V, VBE=1.5V (2N6421) 1.0 mA
ICEV V
CE=450V, VBE=1.5V (2N6422) 1.0 mA
ICEV V
CE=450V, VBE=1.5V (2N6423) 2.0 mA
ICEV V
CE=225V, VBE=1.5V, TC=150°C (2N6420) 3.0 mA
ICEV V
CE=300V, VBE=1.5V, TC=150°C (2N6421) 3.0 mA
ICEV V
CE=300V, VBE=1.5V, TC=150°C (2N6422) 3.0 mA
ICEV V
CE=300V, VBE=1.5V, TC=150°C (2N6423) 5.0 mA
ICEO V
CE=150V (2N6420) 10 mA
ICEO V
CE=150V (2N6421, 2N6422, 2N6423) 5.0 mA
IEBO V
EB=6.0V (2N6420) 5.0 mA
IEBO V
EB=6.0V (2N6421, 2N6422, 2N6423) 0.5 mA
BVCEO I
C=50mA, (2N6420) 175 V
BVCEO I
C=50mA, (2N6421) 250 V
BVCEO I
C=50mA, (2N6422, 2N6423) 300 V
VCE(SAT) I
C=1.0A, IB=125mA (2N6420 thru 2N6422) 0.75 V
VCE(SAT) I
C=750mA, IB=75mA (2N6423) 1.0 V
VBE(SAT) I
C=1.0A, IB=100mA (2N6420 thru 2N6422) 1.4 V
VBE(SAT) I
C=750mA, IB=75mA (2N6423) 1.8 V
hFE V
CE=10V, IC=100mA 40
hFE V
CE=10V, IC=500mA (2N6420) 40 200
2N6420
2N6421
2N6422
2N6423
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6420 series
devices are silicon PNP power transistors designed
for high speed switching and high voltage amplifier
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R1 (2-September 2014)
www.centralsemi.com
2N6420
2N6421
2N6422
2N6423
SILICON
PNP POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
hFE V
CE=2.0V, IC=750mA (2N6423) 10 100
hFE V
CE=2.0V, IC=1.0A (2N6421, 2N6422) 8.0 80
hFE V
CE=10V, IC=1.0A (2N6420) 10
hfe V
CE=30V, IC=100mA, f=1.0kHz 25 350
fT V
CE=10V, IC=200mA, f=5.0MHz (2N6420,21,22) 10 MHz
fT V
CE=10V, IC=200mA, f=5.0MHz (2N6423) 15 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 120 pF
tr V
CC=200V, IC=1.0A, IB1=100mA,
R
L=200Ω (2N6420, 2N6421, 2N6422) 3.0 μs
tr V
CC=200V, IC=750mA, IB1=75mA,
R
L=267Ω (2N6423) 5.0 μs
ts V
CC=200V, IC=1.0A, IB1=IB2=100mA
(2N6420, 2N6421, 2N6422) 4.0 μs
ts V
CC=200V, IC=750mA, IB1=IB2=75mA (2N6423) 6.0 μs
tf V
CC=200V, IC=1.0A, IB1=IB2=100mA
(2N6420, 2N6421, 2N6422) 3.0 μs
tf V
CC=200V, IC=750mA, IB1=IB2=75mA (2N6423) 3.0 μs
IS/b V
CE=100V 150 mA
www.centralsemi.com
R1 (2-September 2014)
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