BCX17 - ON SEMICONDUCTOR - Datasheet.Live

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BCX17 — PNP General-Purpose Amplifier

BCX17 Rev. 1.1.0 1

March 2014

BCX17

PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Part Number Marking Package Packing Method

BCX17 T1 SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -45 V

VCBO Collector-Base Voltage -50 V

VEBO Emitter-Base Voltage -5 V

ICCollector Current - Continuous -500 mA

TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C

Description

This device is designed for general-purpose amplifiers

and switching applications at currents to 0.5 A.

Sourced from process 78.

SOT-23

1. Base 2. Emitter 3. Collector

Mark: T1

BCX17 — PNP General-Purpose Amplifier

BCX17 Rev. 1.1.0 2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

1. Alumina = 0.4 inch x 0.3 inch x 0.024 inch 9.5% alumina.

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

PDTotal Device Dissipation: Alumina Substrate, T A = 25°C(1) 300 mW

Derate Above TA = 25°C 2.4 mW/°C

RθJA Thermal Resistance, Junction to Ambient 417 °C/W

Symbol Parameter Conditions Min. Max. Unit

V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 - 45 V

V(BR)CES Collector-Emitter Breakdown Voltage IC = -10 μA, IE = 0 -50 V

ICBO Collector Cut-Off Current VCB = -20 V, IE = 0 -100 nA

VCB = -20 V, IE = 0,

TA = 150°C -5 μA

IEBO Emitter Cut-Off Current VEB = -5.0 V, IC = 0 -10 μA

hFE DC Current Gain IC = -100 mA, VCE = -1.0 V 100 600

IC = -300 mA, VCE = -1.0 V 70

IC = -500 mA, VCE = -1.0 V 40

VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA -0.62 V

VBE(on) Base-Emitter On Voltage IC = -500 mA, VCE = -1.0 V -1.2 V

BCX17 — PNP General-Purpose Amplifier

BCX17 Rev. 1.1.0 3

Physical Dimensions

Figure 1. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

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LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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Rev. I68

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