Rev.3.00 Sep 07, 2005 page 1 of 8
2SJ527(L), 2SJ527(S)
Silicon P Channel MOS FET REJ03G0877-0300
(Previous : AD E- 208-6 40 A)
Rev.3.00
Sep 07, 2005
Description
High speed power swit ching
Features
• Low on-resistance
RDS (on) = 0.3 Ω typ.
• Low drive current
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code:
PRSS0004ZD-A
(Package name:
DPAK (L)-(1) )
RENESAS Package code:
PRSS0004ZD-C
(Package name:
DPAK (S) )
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
D
G
S
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID –5 A
Drain peak current ID (pulse) Note 1 –20 A
Body to drain diode reverse drain current IDR –5 A
Avalanche current IAP Note 3 –5 A
Avalanche energy EAR Note 3 2.1 mJ
Channel dissipation Pch Note 2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff volta ge VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state resistance RDS (on) — 0.3 0.4 Ω I
D = –3 A, VGS = –10 V Note 4
Static drain to source on state resistance RDS (on) — 0.5 0.8 Ω I
D = –3 A, VGS = –4 V Note 4
Forward transfer admittance |yfs| 1.8 3 — S ID = –3 A, VDS = –10 V Note 4
Input capacitance Ciss — 220 — pF
Output capacitance Coss — 110 — pF
Reverse transfer capacitance Crss — 35 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 10 — ns
Rise time tr — 30 — ns
Turn-off delay time td (off) — 45 — ns
Fall time tf — 35 — ns
VGS = –10 V
ID = –3 A
RL = 10 Ω
Body to drain diode forward voltage VDF — –1.35 — V IF = –5 A, VGS = 0
Body to drain diode reverse recovery time trr — 55 — ns IF = –5 A, VGS = 0
diF/dt = 50 A/µs
Note: 4. Pulse test
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
–5
0
–1
–2
–3
–4
0–2–4–6–8
–10
–5
0
–1
–2
–3
–4
0 –1–2–3–4–5
Tc = 75°C
40
0
10
20
30
0 50 100 150 200
V
DS
= –10 V
Pulse Test
–10 V
–5 V
–6 V
–8 V
–4 V
–3.5 V
–3 V
V
GS
= –2.5 V
Pulse Test
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
–50
–20
–0.2
–0.5
–10
–2
–5
–1
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
–100
Ta = 25°C
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
1 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS (on)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
0
–1
–2
–3
–4
0 –4 –8 –12 –16 –20
Pulse Test
I
D
= –5 A
–2 A
–1 A
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.2
0.5
0.1
–0.3 –3 –10–0.1 –1 –30
10
5
V
GS
= –4 V
–10 V
Pulse Test
–25°C
25°C
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 4 of 8
2.0
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.4
0.8
1.2
1.6
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Pulse Test
I
D
= –4 A
I
D
= –5 A
–1 A, –2 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(A)
10
5
1
2
0.2
0.5
0.1
–0.1 –0.2 –0.5 –1 –5–2 –10
Tc = –25°C
75°C
V
DS
= –10 V
Pulse Test
25°C
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2 –5 –10
100
50
20
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
100
200
50
5
2
10
20
1
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
0
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
4 8 12 16 20
V
DS
V
GS
100
20
50
10
2
5
1–0.2 –0.5 –1 –5–2 –10
–0.1
tf
tr
td(off)
td(on)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
–10 V
V
GS
= –4 V
–2 A
–1 A
–5 A
V
GS
= –10 V, V
DD
= –30 V
duty ≤ 1 %
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 5 of 8
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
25 50 75 100 125 150
0
0.5
1.0
1.5
2.0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= –5 A
V
DD
= –25 V
duty < 0.1 %
Rg ≥ 50 Ω
–5
0
–1
–2
–3
–4
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
–5 V
V
GS
= 0 V
–10 V
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
–
15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 6 of 8
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Waveform
Vin Monitor
D.U.T.
Vin
–10 V
R
L
Vout
Monitor
50 Ω
V
DD
= –30 V
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 7 of 8
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
Package Name
PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SJ527L-E 3200 pcs Box (Sack)
2SJ527STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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Colophon .3.0
