MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector - Base Voltage VCBO 140 140 Vdc Emitter - Base Voltage VEBO 7.0 7.0 Vdc Collector Current -- Continuous IC 1.0 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 0.8 4.6 0.5 2.85 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 5.0 28.6 1.8 10.6 Watts mW/C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to +200 3 2 1 2N3019 CASE 79-04, STYLE 1 TO-39 (TO-205AD) C 3 2 1 THERMAL CHARACTERISTICS Characteristic Symbol 2N3019 2N3700 Unit Thermal Resistance, Junction to Ambient RqJA 217 350 C/W RqJC 35 97 C/W Thermal Resistance, Junction to Case 2N3700 CASE 22-03, STYLE 1 TO-18 (TO-206AA) LAST ORDER 23/09/99 Rating LIFETIME BUY Symbol Collector - Emitter Voltage ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage(1) (IC = 30 mAdc, IB = 0) V(BR)CEO 80 -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 140 -- Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 7.0 -- Vdc -- -- 0.01 10 -- 0.01 50 90 100 40 50 15 -- -- 300 -- -- -- OFF CHARACTERISTICS Collector Cutoff Current (VCB = 90 Vdc, IE = 0) (VCB = 90 Vdc, IE = 0, TA = +150C) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Adc Adc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 10 Vdc, TC = - 55C)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) (IC = 1.0 Adc, VCE = 10 Vdc)(1) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 1.0%. hFE -- Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 2N3019 2N3700 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max -- -- 0.2 0.5 Unit Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) -- 1.1 Vdc fT 100 400 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 60 pF Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 80 400 -- rbCc -- 15 400 400 ps NF -- 4.0 dB LAST SHIP 21/03/00 ON CHARACTERISTICS (continued) Vdc SMALL- SIGNAL CHARACTERISTICS Collector Base Time Constant (IE = 10 mAdc, VCB = 10 Vdc, f = 79.8 MHz) 2N3019 2N3700 Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) v 300 ms, Duty Cycle v 1.0%. 100 50 TJ = 150C 1.0 TJ = 25C 0.5 TJ = - 55C 0.1 0.5 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 Cib 10 Cob 5.0 1.0 0.1 1.0 VR, REVERSE VOLTAGE (V) Figure 1. DC Current Gain 10 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 1.0 I VBE(sat) C IB 0.8 VBE(on) for VCE = 1.0 V 0.6 0.4 I VCE(sat) C IB 0.2 0 + 10 0.1 + 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. "On" Voltages 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 hFE , NORMALIZED DC CURRENT GAIN 1. Pulse Test: Pulse Width C, CAPACITANCE (pF) LIFETIME BUY Current - Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) (- 55C to 25C) 0.8 VC for VCE(sat) 0 - 0.8 VBB for VBE - 55C to + 25C 6.0 2.0 + 25C to + 150C - 1.6 0.5 1.0 10 50 100 IC, COLLECTOR CURRENT (mA) 500 0 1000 Figure 4. Temperature Coefficients Re = 1.0 k IC = 100 A 0.1 1.0 f, FREQUENCY (kHz) 10 100 Figure 5. Frequency Effects 14 f = 1.0 kHz VCE = 10 V TA = 25C 10 IC = 100 A 8.0 6.0 4.0 100 hfe , CURRENT GAIN 12 NF, NOISE FIGURE (dB) IC = 10 A 0 0.1 1.0 0 0.1 10 100 1000 RS, SOURCE RESISTANCE (k OHMS) Figure 6. Source Resistance Effects 1.0 IC, COLLECTOR CURRENT (mAdc) LAST ORDER 23/09/99 2.0 10 Figure 7. Current Gain Bandwidth Product versus Collector Current -- 1.0 kHz hfe 1000 f (MHz) 200 VCE = 20 V 40 10 IC, COLLECTOR CURRENT (A) LIFETIME BUY RS = 4.3 k IC = 10 A 4.0 LAST SHIP 21/03/00 + 25C to + 150C 1.6 NF, NOISE FIGURE (dB) V, TEMPERATURE COEFFICIENT (mV/ C) 2N3019 2N3700 1.0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mAdc) Figure 8. Current Gain -- Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 500 s 5.0 ms 1.0 ms dc TO-39 dc TO-18 0.1 0.01 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 9. Active Region Safe Operating Area 3 2N3019 2N3700 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION B SHALL NOT VARY MORE THAN 0.25 (0.010) IN ZONE R. THIS ZONE CONTROLLED FOR AUTOMATIC HANDLING. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. B C -T- E SEATING PLANE L F K P D 3 PL 0.36 (0.014) M T A M H M 2 -H- 1 G 3 DIM A B C D E F G H J K L M P R M LIFETIME BUY J INCHES MIN MAX 0.335 0.370 0.305 0.335 0.240 0.260 0.016 0.021 0.009 0.041 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.045 0.500 0.750 0.250 --- 45 _BSC --- 0.050 0.100 --- MILLIMETERS MIN MAX 8.51 9.39 7.75 8.50 6.10 6.60 0.41 0.53 0.23 1.04 0.41 0.48 5.08 BSC 0.72 0.86 0.74 1.14 12.70 19.05 6.35 --- 45 _BSC --- 1.27 2.54 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 079-04 (TO-205AD) ISSUE N -A- B E C SEATING PLANE -T- F L P K D 3 PL 0.36 (0.014) N -H- T A M H M G 3 DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --- 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 --- 0.250 --- 45 _BSC 0.050 BSC --- 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 --- 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 --- 6.35 --- 45_BSC 1.27 BSC --- 1.27 N 2 1 M M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). CASE 022-03 (TO-206AA) ISSUE N J STYLE 1: PIN 1. EMITTER 2. BASE 3. 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