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1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2N3019 2N3700 Unit
CollectorEmitter Voltage VCEO 80 80 Vdc
CollectorBase Voltage VCBO 140 140 Vdc
EmitterBase Voltage VEBO 7.0 7.0 Vdc
Collector Current — Continuous IC1.0 1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD0.8
4.6 0.5
2.85 Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD5.0
28.6 1.8
10.6 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol 2N3019 2N3700 Unit
Thermal Resistance, Junction to Ambient R
q
JA 217 350 °C/W
Thermal Resistance, Junction to Case R
q
JC 35 97 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 30 mAdc, IB = 0) V(BR)CEO 80 Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0) V(BR)CBO 140 Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0) V(BR)EBO 7.0 Vdc
Collector Cutoff Current
(VCB = 90 Vdc, IE = 0)
(VCB = 90 Vdc, IE = 0, TA = +150°C)
ICBO
0.01
10
µAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO 0.01 µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 10 Vdc, TC = –55°C)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
(IC = 1.0 Adc, VCE = 10 Vdc)(1)
hFE 50
90
100
40
50
15
300
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
1.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N3019/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N3019
2N3700
2N3019
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
1
2
3
Motorola Preferred Devices
2N3700
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
321
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (continued)
Collector–Emitter Saturation Voltage (1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.2
0.5
Vdc
Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 1.1 Vdc
SMALL–SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) fT100 400 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 12 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 60 pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 80 400
Collector Base T ime Constant 2N3019
(IE = 10 mAdc, VCB = 10 Vdc, f = 79.8 MHz) 2N3700 rbCc
15 400
400 ps
Noise Figure
(IC = 100 µAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) NF 4.0 dB
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
1.0%.
1.0
0.1
0.5
1000100101.00.5 IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
h
FE
,
N
ORMALI
Z
E
D D
C
C
U
RRE
N
T
G
AI
N
C, CAPACITANCE (pF)
101.00.1
100
1.0
5.0
10
50
VR, REVERSE VOLTAGE (V)
Figure 2. Capacitance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
01000100101.00.1 IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
Cob
Cib
TJ = 150°C
TJ = 25°C
TJ = –55°C
VBE(on) for VCE = 1.0 V
VBE(sat) IC
IB
+
10
VCE(sat) IC
IB
+
10
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3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
V
,
TEM
P
ERAT
U
RE
COEFFICIE
N
T
(m
V
/
C
)°θ
hfe, CURRENT GAIN
1.6
0.8
0
0.8
1.6
100050101.00.5 IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
100 500 0
2.0
4.0
6.0
101.00.1 100
f, FREQUENCY (kHz)
Figure 5. Frequency Effects
14
12
10
8.0
6.0
4.0
2.0
00.1 1.0 10 100 1000
RS, SOURCE RESISTANCE (k OHMS)
Figure 6. Source Resistance Effects
0
100
0.1 1.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 7. Current Gain Bandwidth Product
versus Collector Current — 1.0 kHz hfe
NF, NOISE FIGURE (dB)
N
F,
N
OISE
FI
GU
RE
(d
B
)
RS = 4.3 k
IC = 10 µA
Re = 1.0 k
IC = 100 µA
f = 1.0 kHz
VCE = 10 V
TA = 25°C
IC = 100 µA
IC = 10 µA
+25°C to +150°C
(–55°C to 25°C)
θVC for VCE(sat)
–55°C to +25°C
+25°C to +150°C
θVBB for VBE
fτ(MHz)
1000
200
40
10
1.0 0.1 1.0 10 100
IC, COLLECTOR CURRENT (mAdc)
Figure 8. Current Gain — Bandwidth Product
0.01
0.1
1.0 10 100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 9. Active Region Safe Operating Area
VCE = 20 V
IC, COLLECTOR CURRENT (A)
500 µs
1.0 ms5.0 ms
dc TO–39 dc TO–18
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2N3019 2N3700
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 079–04
(TO–205AD)
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN
0.25 (0.010) IN ZONE R. THIS ZONE
CONTROLLED FOR AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION
P AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD
DIAMETER IS UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
R
EF
B
C
K
L
P
D3 PL
–T–
–A–
–H–
M
J
G
2
31
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.335 0.370 8.51 9.39
B0.305 0.335 7.75 8.50
C0.240 0.260 6.10 6.60
D0.016 0.021 0.41 0.53
E0.009 0.041 0.23 1.04
F0.016 0.019 0.41 0.48
G0.200 BSC 5.08 BSC
H0.028 0.034 0.72 0.86
J0.029 0.045 0.74 1.14
K0.500 0.750 12.70 19.05
L0.250 ––– 6.35 –––
M45 BSC 45 BSC
P––– 0.050 ––– 1.27
R0.100 ––– 2.54 –––
__
M
A
M
0.36 (0.014) H M
T
CASE 022–03
(TO–206AA)
ISSUE N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
E
F
B
C
K
L
P
D3 PL
–T–
–H–
MJ
G
2
31
M
A
M
0.36 (0.014) H M
T
NN
–A–
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.209 0.230 5.31 5.84
B0.178 0.195 4.52 4.95
C0.170 0.210 4.32 5.33
D0.016 0.021 0.406 0.533
E––– 0.030 ––– 0.762
F0.016 0.019 0.406 0.483
G0.100 BSC 2.54 BSC
H0.036 0.046 0.914 1.17
J0.028 0.048 0.711 1.22
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
M45 BSC 45 BSC
N0.050 BSC 1.27 BSC
P––– 0.050 ––– 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION F APPLIES BETWEEN DIMENSION P
AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.
5. DIMENSION E INCLUDES THE TAB THICKNESS.
(TAB THICKNESS IS 0.51(0.002) MAXIMUM).
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2N3019/D
*2N3019/D*