IRFBC40STRR - International Rectifier

IRFBC40S/L

HEXFET® Power MOSFET

PD - 91016A

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 1.0

RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** – – – 4 0

Thermal Resistance

°C/W

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 6.2

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V3.9 A

IDM Pulsed Drain Current  25

@TA = 25°C Power Dissipation 3.1 W

PD @TC = 25°C Power Dissipation 130 W

Linear Derating Factor 1. 0 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy  570 mJ

IAR Avalanche Current6.2 A

EAR Repetitive Avalanche Energy13 mJ

dv /d t Peak Diode Recovery dv/dt  3.0 V/ns

TJOperating Junction and -55 to + 150

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

Absolute Maximum Ratings

VDSS = 600V

RDS(on) = 1.2 Ω

ID = 6.2A

D P a k

TO-262

9/27/01

lSurface Mount (IRFBC40S)

lLow-profile through-hole (IRFBC40L)

lAvailable in Tape & Reel (IRFBC40S)

lDynamic dv/dt Rating

l150°C Operating Temperature

lFast Switching

lFully Avalanche Rated

Third generation HEXFETs from international Rectifier provide the designer with the

best combination of fast switching, ruggedized device design, low on-resistance and

cost-effectiveness.

The D2Pak is a surface mount power package capable of the accommodatingdie sizes

up to HEX-4. It provides the highest power capability and the lowest possible on-

resistance in any existing surface mount package. The D2Pak is suitable for high

current applications because of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface mount application. The through-hole version

(IRFBC40L) is available for low-profile applications.

Description

IRFBC40S/L

 VDD =50V, starting TJ = 25°C, L =27mH

RG = 25Ω, IAS = 6.2A. (See Figure 11)

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

ISD ≤ 6.2A, di/dt ≤ 80A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Uses IRFBC40 data and test conditions

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) 

––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 6.2A, VGS = 0V 

trr Reverse Recovery Time ––– 450 940 n s TJ = 25°C, IF = 6.2A

Qrr Reverse Recovery Charge ––– 3.8 7.9 µC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.70 ––– V/°C Reference to 25°C, ID =1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.2 ΩVGS =10V, ID = 3.7A 

VGS(th) Gate Threshold Voltage 2. 0 –– – 4 .0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 4.7 ––– ––– S VDS = 100V, I D = 3.7A

––– ––– 100 µA VDS = 600V, VGS = 0V

––– ––– 500 VDS = 480V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

QgTotal Gate Charge ––– ––– 60 ID = 6.2A

Qgs Gate-to-Source Charge ––– ––– 8.3 nC VDS = 3600V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 

td(on) Turn-On Delay Time ––– 13 ––– VDD = 300V

trRise Time ––– 18 ––– ID = 6.2A

td(off) Turn-Off Delay Time ––– 55 –– – RG = 9.1Ω

tfFall Time ––– 20 ––– RD = 47Ω, See Fig. 10 

Between lead,

––– ––– and center of die contact

Ciss Input Capacitance – – – 1300 ––– VGS = 0V

Coss Output Capacitance ––– 160 ––– pF V DS = 25V

Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS Drain-to-Source Leakage Current

7.5

LSInternal Source Inductance

6.2

IRFBC40S/L

Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.

Period

Fig 14. For N-Channel HEXFETS

* VGS = 5V for Logic Level Devices







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



IRFBC40S/L

D2Pak Package Outline

D2Pak

Part Marking Information

10.16 (.400)

REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)

REF.

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

5.28 (.208)

4.78 (.188)

4.69 (.185)

4.20 (.165)

10.54 (.415)

10.29 (.405)

- A -

1 3 15.49 (.610)

14.73 (.580)

3X 0.93 (.037)

0.69 (.027)

5.08 (.200)

3X 1.40 (.055)

1.14 (.045)

1.78 (.070)

1.27 (.050)

1.40 (.055)

MAX.

NOTES:

1 DIMENSIONS AFTER SOLDER DIP.

2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

3 CONTROLLING DIMENSION : INCH.

4 HEATSINK & LEAD DIMENSIO NS DO NOT INCLUDE BURRS.

0.55 (.022)

0.46 (.018)

0.25 (.010) M B A M MINIMUM RECO MM ENDED FOO TP RINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)

LE AD ASS IG NMEN TS

1 - GATE

2 - DRAIN

3 - SOURC E

2.54 ( .100)

PART NUMBER

INTERNATIONAL

REC TIFIER

L OGO DATE CODE

(YYWW)

YY = YEAR

WW = WEEK

AS SEMBLY

LOT CODE

F530S

9B 1M

9246

IRFBC40S/L

Package Outline

TO-262 Outline

TO-262

Part Marking Information

IRFBC40S/L

Tape & Reel Information

D2Pak

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/Data and specifications subject to change without notice 9/01

TRR

FE ED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421) 16.10 (.634)

15.90 (.626)

1. 75 (.0 69)

1. 25 (.0 49)

11.60 (.457 )

11.40 (.449 ) 15 .42 (.60 9)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.5 0 (. 532)

12.8 0 (. 504)

330.00

(14.173)

M A X.

27.4 0 (1.079 )

23.9 0 (.9 41)

60.0 0 (2.36 2)

MIN.

30.4 0 (1.19 7)

MAX.

26.40 (1. 039)

24.40 (.961)

NO TES :

1. C O M F ORM S T O EIA -418.

2. CONTROLLING DIMENSIO N: MILLIME TER .

3. DIME NS ION MEAS URE D @ HUB .

4. INCLU DES FLAN GE DISTORTION @ OUTER ED GE.