IRF9393TRPBF - INTERNATIONAL RECTIFIER

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11/3/10

IRF9393PbF

HEXFET® Power MOSFET

Notes  through  are on page 2

PD - 97522A

Features and Benefits

Applications

• Adaptor Input Switch for Notebook PC

Features Resulting Benefits

SO-8

Absolute Maximum Ratin

Parameter Units

VDS Drain-to-Source Voltage

VGS Gate-to-Source Voltage

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current

PD @TA = 25°C Power Dissipation

PD @TA = 70°C Power Dissipation

Linear Derating Factor W/°C

TJ Operating Junction and

TSTG Storage Temperature Range

-55 to + 150

2.5

0.02

1.6

Max.

-9.2

-7.3

-75

± 25

-30 V

°C

Note

Form Quantity

IRF9393PbF SO8 Tube/Bulk 95

IRF9393TRPbF SO8 Tape and Reel 4000

Orderable part number Package Type Standard Pack

-30 V

GS max

±25 V

DS(on) max

(@V

= -10V)

19.4 mΩ

(@T

= 25°C)

-9.2 A

25V VGS max Direct Drive at High VGS

Industry-Standard SO8 Package Multi-Vendor Compatibility

RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier

IRF9393PbF

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Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting TJ = 25°C, L = 3.5mH, RG = 25Ω, IAS = -7.5A.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

 Rθ is measured at TJ of approximately 90°C.

 For DESIGN AID ONLY, not subject to production testing.

Static @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V

ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C

RDS(on) ––– 13.3 –––

––– 15.6 19.4

––– 25.6 32.5

VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V

ΔVGS(th) Gate Threshold Voltage Coefficient ––– -5.7 ––– mV/°C

IDSS Drain-to-Source Leakage Current ––– ––– -1.0

––– ––– -150

IGSS Gate-to-Source Forward Leakage ––– ––– -10

Gate-to-Source Reverse Leakage ––– ––– 10

gfs Forward Transconductance 13 ––– ––– S

QgTotal Gate Charge

––– 14 ––– nC VDS = -15V, VGS = -4.5V, ID = - 7.5A

QgTotal Gate Charge

––– 25 38

Qgs Gate-to-Source Charge

––– 3.5 –––

Qgd Gate-to-Drain Charge

––– 6.4 –––

RGGate Resistance

––– 15 ––– Ω

td(on) Turn-On Delay Time ––– 16 –––

trRise Time ––– 44 –––

td(off) Turn-Off Delay Time ––– 55 –––

tfFall Time ––– 49 –––

Ciss Input Capacitance ––– 1110 –––

Coss Output Capacitance ––– 230 –––

Crss Reverse Transfer Capacitance ––– 160 –––

Avalanche Characteristics

Parameter Units

EAS Single Pulse Avalanche Energy

IAR Avalanche Current

Diode Characteristics

Parameter Min. Typ. Max. Units

ISContinuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– -1.2 V

trr Reverse Recovery Time ––– 24 36 ns

Qrr Reverse Recovery Charge ––– 15 23 nC

Thermal Resistance

Parameter Units

RθJL Junction-to-Drain Lead

RθJA Junction-to-Ambient

mΩ

Conditions

See Figs. 20a &20b

Max.

100

-7.5

ƒ = 1.0MHz

VGS = 0V

VDS = -25V

VDS = -24V, VGS = 0V

Conditions

VGS = 0V, ID = -250μA

Reference to 25°C, ID = -1mA

VGS = -20V, ID = -9.2A

VDS = VGS, ID = -25μA

VGS = -10V, ID = -9.2A

VGS = -4.5V, ID = -7.5A

μA

= 25°C, I

= -2.5A, VDD = -24V

di/dt = 100A/μs

= 25°C, I

= -2.5A, V

= 0V

showing the

integral reverse

p-n junction diode.

MOSFET symbol

ID = -7.5A

RG = 6.8Ω

VDS = -10V, ID = -7.5A

VDS = -24V, VGS = 0V, TJ = 125°C

VDD = -15V, VGS = -4.5V

ID = -1.0A

VDS = -15V

VGS = -25V

VGS = 25V

VGS = -10V

–––

Typ.

–––

Static Drain-to-Source On-Resistance

––– –––

-2.5

-75

μA

°C/W

Max.

Typ.

–––

IRF9393PbF

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Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1 110 100

-VDS, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

VGS

TOP -10V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-2.8V

BOTTOM -2.5V

≤60μs PULSE WIDTH

Tj = 150°C

-2.5V

1.0 2.0 3.0 4.0 5.0

-VGS, Gate-to-Source Voltage (V)

0.01

0.1

100

-ID, Drain-to-Source Current (A)

VDS = -15V

≤ 60μs PULSE WIDTH

TJ = 25°C

TJ = 150°C

0.1 110 100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

-ID, Drain-to-Source Current (A)

VGS

TOP -10V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-2.8V

BOTTOM -2.5V

≤60μs PULSE WIDTH

Tj = 25°C

-2.5V

0 8 16 24 32

QG Total Gate Charge (nC)

-VGS, Gate-to-Source Voltage (V)

VDS= -24V

VDS= -15V

VDS= -6.0V

ID= -7.5A

110 100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

C, Capacitance(pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

-60 -40 -20 020 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = -9.2A

VGS = -10V

IRF9393PbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 8. Maximum Safe Operating Area

Fig 9. Maximum Drain Current vs.

Ambient Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 10. Threshold Voltage vs. Temperature

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

-VSD, Source-to-Drain Voltage (V)

0.1

100

-ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 150°C

VGS = 0V

25 50 75 100 125 150

TA , Ambient Temperature (°C)

-ID, Drain Current (A)

-75 -50 -25 025 50 75 100 125 150

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

-VGS(th), Gate threshold Voltage (V)

ID = -25μA

1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

100

Thermal Response ( Z

thJA ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T A

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

0.1

100

1000

-ID, Drain-to-Source Current (A)

OPERATION IN THIS AREA

LIMITED BY R DS(on)

TA = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

IRF9393PbF

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Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current

Fig 16. Typical Power vs. Time

* Reverse Polarity of D.U.T for P-Channel

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

* VGS = 5V for Logic Level Devices

Inductor Current

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

• di/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test







RGVDD

D.U.T *



Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs

2 4 6 8 10 12 14 16 18 20

-VGS, Gate -to -Source Voltage (V)

RDS(on), Drain-to -Source On Resistance (m

Ω)

TJ = 125°C

TJ = 25°C

ID = -9.4A

010 20 30 40 50 60 70

-ID, Drain Current (A)

RDS(on), Drain-to -Source On Resistance (

mΩ)

VGS = -10V

VGS = -4.5V

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

120

180

240

300

360

420

EAS , Single Pulse Avalanche Energy (mJ)

TOP -2.1A

-3.0A

BOTTOM -7.5A

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Time (sec)

200

400

600

800

1000

Single Pulse Power (W)

IRF9393PbF

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Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform

Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

Fig 20b. Switching Time Waveforms

Fig 20a. Switching Time Test Circuit

Vds

Vgs

Vgs(th)

Qgs1

Qgs2QgdQgodr

VCC

DUT

20K

0.01

D.U.T

DRIVER

15V

-20V

-VGS

VDS

-VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

D.U.T.

(

)

DSS

90%

10%

td(on) trtd(off) tf

IRF9393PbF

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

SO-8 Package Outline(Mosfet & Fetky)

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MIL L I ME T E R SINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050] 8X 1.78

[

.070

]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOT E S :

1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.

2. CONT ROL L ING DIMENS ION: MIL LIMET E R

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .

6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .

MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A S UBS T RAT E.

MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].

Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

P = DISGNATES LEAD - FREE

EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )

F7101

XXXX

INTERNATIONAL

LOGO

RECTIFIER

PART NUMBER

LOT CODE

PRODUCT (OPTIONAL)

DAT E CODE (YWW)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

A = AS S E MB L Y S I T E CODE

IRF9393PbF

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 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/2010

Data and specifications subject to change without notice.

330.00

(12.992)

MAX.

14.4 0 ( .566 )

12.4 0 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))

MSL1

(per JEDEC J-STD-020D

†††

)

RoHS Compliant

Qualification Information

†

Qualification level Consumer

††

(per JEDEC JESD47F

†††

guidelines)

Yes

Moisture Sensitivity Level SO-8