PD - 97522A IRF9393PbF HEXFET(R) Power MOSFET VDS -30 25 V V 19.4 m -9.2 A VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25C) S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Applications * Adaptor Input Switch for Notebook PC Features and Benefits Features Resulting Benefits 25V VGS max Direct Drive at High V G S Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type IRF9393PbF IRF9393TRPbF SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -30 VGS Gate-to-Source Voltage 25 ID @ TA = 25C Continuous Drain Current, VGS @ 10V -9.2 ID @ TA = 70C Continuous Drain Current, VGS @ 10V -7.3 IDM Pulsed Drain Current -75 PD @TA = 25C Power Dissipation PD @TA = 70C f Power Dissipation f c 2.5 1.6 Linear Derating Factor 0.02 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Units V A W W/C C Notes through are on page 2 www.irf.com 1 11/3/10 IRF9393PbF Static @ TJ = 25C (unless otherwise specified) Parameter Conditions Min. Typ. Max. Units VGS = 0V, ID = -250A BVDSS Drain-to-Source Breakdown Voltage -30 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 0.019 --- --- 13.3 --- V/C Reference to 25C, ID = -1mA VGS = -20V, ID = -9.2A --- 15.6 19.4 m --- 25.6 32.5 RDS(on) Static Drain-to-Source On-Resistance V VGS = -4.5V, ID VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V VGS(th) Gate Threshold Voltage Coefficient --- -5.7 --- mV/C IDSS Drain-to-Source Leakage Current --- --- -1.0 --- --- -150 Gate-to-Source Forward Leakage --- --- -10 Gate-to-Source Reverse Leakage --- --- 10 gfs Qg Forward Transconductance 13 --- --- S Total Gate Charge --- 14 --- nC Qg Total Gate Charge --- 25 38 Qgs Gate-to-Source Charge --- 3.5 --- Qgd Gate-to-Drain Charge --- 6.4 --- RG Gate Resistance td(on) Turn-On Delay Time IGSS h h h h h A A e e = -7.5A e VGS = -10V, ID = -9.2A VDS = VGS, ID = -25A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -25V VGS = 25V VDS = -10V, ID = -7.5A VDS = -15V, VGS = -4.5V, ID = - 7.5A VGS = -10V nC VDS = -15V ID = -7.5A --- 15 --- --- 16 --- VDD = -15V, VGS = -4.5V ID = -1.0A tr Rise Time --- 44 --- td(off) Turn-Off Delay Time --- 55 --- tf Fall Time --- 49 --- Ciss Input Capacitance --- 1110 --- Coss Output Capacitance --- 230 --- Crss Reverse Transfer Capacitance --- 160 --- ns e RG = 6.8 See Figs. 20a &20b VGS = 0V pF VDS = -25V = 1.0MHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current Diode Characteristics c d Parameter IS Max. Units --- 100 mJ --- -7.5 A Conditions Min. Typ. Max. Units Continuous Source Current (Body Diode) ISM Typ. --- --- -2.5 --- --- -75 MOSFET symbol A Pulsed Source Current c (Body Diode) D showing the G integral reverse S p-n junction diode. e VSD Diode Forward Voltage --- --- -1.2 V TJ = 25C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time --- 24 36 ns TJ = 25C, IF = -2.5A, VDD = -24V Qrr Reverse Recovery Charge --- 15 23 nC di/dt = 100A/s Thermal Resistance Parameter RJL Junction-to-Drain Lead RJA Junction-to-Ambient f g Typ. Max. --- 20 --- 50 e Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 3.5mH, RG = 25, IAS = -7.5A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9393PbF 100 100 10 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V 1 -2.5V 0.1 10 BOTTOM -2.5V 1 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 150C 0.01 0.1 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID, Drain-to-Source Current (A) 1 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 TJ = 150C 1 TJ = 25C 0.1 VDS = -15V 60s PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 ID = -9.2A 1.2 1.0 0.8 0.6 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature 14 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 10000 VGS = -10V 1.4 -VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V Coss Crss ID= -7.5A 12 VDS= -24V VDS= -15V 10 VDS= -6.0V 8 6 4 2 0 100 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 8 16 24 32 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRF9393PbF 100 1000 -ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A) TJ = 150C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25C 1 1msec 10 10msec 1 TA = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 -VSD, Source-to-Drain Voltage (V) 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.5 -VGS(th), Gate threshold Voltage (V) 10 8 -ID, Drain Current (A) DC 0.1 6 4 2 2.0 ID = -25A 1.5 1.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( C ) TA , Ambient Temperature (C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( ZthJA ) C/W 100 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 0.001 1E-006 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 60 ( ) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (m) IRF9393PbF ID = -9.4A 50 40 30 TJ = 125C 20 TJ = 25C 10 2 4 6 8 10 12 14 16 18 80 70 60 50 VGS = -4.5V 40 30 VGS = -10V 20 10 20 0 10 30 40 -VGS, Gate -to -Source Voltage (V) 60 70 Fig 13. Typical On-Resistance vs. Drain Current 420 1000 ID TOP -2.1A -3.0A BOTTOM -7.5A 300 800 Single Pulse Power (W) 360 240 180 120 600 400 200 60 0 0 25 50 75 100 125 1E-5 150 1E-4 Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T * 1E-2 Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode www.irf.com VDD Forward Drop Inductor Current Inductor Curent Ripple 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * * * * * 1E+0 VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. 1E-1 Fig 16. Typical Power vs. Time + RG 1E-3 Time (sec) Starting TJ , Junction Temperature (C) * 50 -ID, Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) 20 ISD * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs 5 IRF9393PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 18a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 18b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01 tp V(BR)DSS 15V Fig 19b. Unclamped Inductive Waveforms Fig 19a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. 10% + V DD -VGS Pulse Width 1 s Duty Factor 0.1 % Fig 20a. Switching Time Test Circuit 6 tr 90% VDS Fig 20b. Switching Time Waveforms www.irf.com IRF9393PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A C 8X b MILLIMETERS MAX A 5 INCHES MIN A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 8X 0.72 [.028] 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9393PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Consumer Qualification level Moisture Sensitivity Level RoHS Compliant (per JEDEC JESD47F guidelines) MSL1 SO-8 (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2010 8 www.irf.com