NSI45035JZT1G
http://onsemi.com
2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Anode−Cathode Voltage Vak Max 45 V
Reverse Voltage VR500 mV
Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C
ESD Rating: Human Body Model
Machine Model
ESD Class 2
Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 29.75 35 40.25 mA
Voltage Overhead (Note 2) Voverhead 1.8 V
Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 30.9 42.5 mA
Capacitance @ Vak = 7.5 V (Note 4) C 7.4 pF
Capacitance @ Vak = 0 V (Note 4) C 31 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 35 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1.0 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
PD1008
8.06
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 124 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 33.3 °C/W
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
PD1136
9.09
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 110 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 33.3 °C/W
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
PD1238
9.9
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 101 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 33.7 °C/W
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
PD1420
11.36
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 88 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 8) RψJL4 32.1 °C/W
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
PD1316
10.53
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 95 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 32.4 °C/W
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
PD1506
12.05
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 83 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 30.8 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
5. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 700 mm2, 1 oz. copper traces, still air.
10.FR−4 @ 700 mm2, 2 oz. copper traces, still air.