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©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC . The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Symbol
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
•Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging JEDEC STYLE TO-247
JEDEC TO- 220AB
JEDEC TO- 263AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG7N60A4D TO-247 G7N60A4D
HGTP7N60A4D TO-220AB G7N60A4D
HGT1S7N60A4DS TO-263AB G7N60A4D
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
C
E
G
COLLECTOR
(FLANGE)
C
E
G
COLLECTOR
(FLANGE)
C
EG
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2005
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 34 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 14 A
Coll e c to r Curre n t Pu l s e d (Note 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 56 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe O perating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD125 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
P ackage Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300
260
oC
oC
CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction tempera ture.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC--2mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 7A,
VGE = 15V TJ = 25oC-1.92.7V
TJ = 125oC-1.62.2V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = 600V 4.5 5.9 7 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 100µH, VCE = 600V 35 - - A
Gate to Emitter Plateau Voltage VGEP IC = 7A, VCE = 300V - 9 - V
On-State Gate Charge Qg(ON) IC = 7A,
VCE = 300V VGE = 15V - 37 45 nC
VGE = 20V - 48 60 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC,
ICE = 7A,
VCE = 390V,
VGE = 15V ,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-11- ns
Current Rise Time trI -11- ns
Current Turn-Off Delay Time td(OFF)I - 100 - ns
Current Fall Time tfI -45- ns
Turn-On Energy EON1 -55- µJ
Turn-On Energy EON2 - 120 150 µJ
Turn-Off Energy (Note 2) EOFF -6075µJ
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC,
ICE = 7A,
VCE = 390V, VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-10- ns
Current Rise Time trI -7-ns
Current Turn-Off Delay Time td(OFF)I - 130 150 ns
Current Fall Time tfI -7585ns
Turn-On Energy (Note 2) EON1 -50- µJ
Turn-On Energy (Note 2) EON2 - 200 215 µJ
Turn-Off Energy (Note 3) EOFF - 125 170 µJ
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
Diode Forward Voltage VEC IEC = 7A - 2.4 - V
Diode Reverse Recovery Time trr IEC = 7A , dIEC/dt = 200A/µs-34-ns
IEC = 1A, dIEC/ dt = 200A/µs-22-ns
Thermal Resistance Junction To Case RθJC IGBT - - 1.0 oC/W
Diode - - 2.2 oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in t he test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERA TING FREQUE NCY vs COLLECT OR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
10
0
30
20
25
25 75 100 125 150
35 VGE = 15V
15
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
20
0
ICE, COLLE CTOR TO EM ITT ER CU RR E NT ( A)
300 400200100 500 600
0
30
10
40 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
fMAX, OPERATING FREQUENCY (kHz)
1
ICE, COLLECTO R TO EMITTER CURRENT (A)
30
200
20510
500
TJ = 125oC, RG = 25Ω, L = 1mH, VCE = 390V
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 1.0oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TCVGE
15V
75oC
VGE, GATE TO EMITTER V O LTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 15
4
6
14
20
80
100
14016
13 14
8
10
12
40
60
120
VCE = 390V, RG = 25Ω, TJ = 125oC
tSC
ISC
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTO R T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
01.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
1.5 2.0 3.0
25
20
TJ = 125oC
TJ = 150oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 12V
30
TJ = 25oC
0.5 2.5
15
ICE, COLLE CTOR TO EMITTER CURR EN T (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TJ = 150oC TJ = 25oC
0
5
10
25
20
30
15
0 1.0 1.5 2.0 3.00.5 2.5
TJ = 125oC
EON2, TURN-ON ENERGY LOSS (µJ)
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
400
042 6 8 101214
TJ = 125oC, VGE = 12V, VGE = 15V
RG = 25Ω, L = 1mH, VCE = 390V
TJ = 25oC, VGE = 12V, VGE = 15V
100
0
500
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OF F ENERGY LOSS (µJ)
0
50
200
100
250
350
TJ = 25oC, VGE = 12V OR 15V
TJ = 125oC, VGE = 12V OR 15V
150
RG = 25Ω, L = 1mH, VCE = 390V
42 6 8 1012140
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
8
14
16
TJ = 125oC, VGE = 15V
RG = 25Ω, L = 1mH, VCE = 390V
12
10
TJ = 25oC, VGE = 1 5V
TJ = 125oC, VGE = 12V
TJ = 25oC, VGE = 12V
42681012140ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
0
20
10
40
30
RG = 25Ω, L = 1mH, VCE = 390V
TJ = 25oC, VGE = 12V, VGE = 15V
TJ = 125oC, VGE = 12V, VGE = 15V
42 6 8 1012140
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECT OR T O EMITT ER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. T O TAL SWIT CHING LOSS vs CASE
TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
100
60
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
180
140
160
120
VGE = 15V, TJ = 125oC
RG = 25Ω, L = 1mH, VCE = 390V
42681012140
VGE = 12V, TJ = 125oC
VGE = 15V, TJ = 25oC
VGE = 12V, TJ = 25oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
20
40
30
60
80
50
70
RG = 25Ω, L = 1m H, VCE = 390V
90
TJ = 125oC, VGE = 12V OR 15V
TJ = 25oC, VGE = 12V OR 15V
42681012140
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
40
60
8 9 11 12 15
VGE, GATE TO EMITTER VOLTAGE (V)
14
80
100
120
7
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
TJ = 125oC TJ = -55oC
TJ = 25oC
20
1310
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
0
3
IG(REF) = 1mA, RL = 43Ω, TJ = 25oC
VCE = 200V
VCE = 400V
6
9
12
15
5101520 3025 35 400
VCE = 600V
ICE = 3.5A
0
200
50 75 100
TC, CASE TEMPERATURE (oC)
400
12525 150
800
ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ)
ETOTAL = EON2 + EOFF
RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V
600
ICE = 14A
ICE = 7A
0.1 100
RG, GATE RESISTANCE (Ω)
1
10 1000
ETOTAL, TO TAL SWITCHING ENERGY LOSS (mJ)
10 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 3.5A
ICE = 7A
ICE = 14A
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 17. CAPA CITANCE vs COLL ECT OR T O EMITTE R
VOLTAGE FIGURE 18. COLLECT OR T O EMITTER ON- STA TE V OLT AGE
vs GATE TO EMITT ER VOLTAGE
FIGURE 19. DIODE FOR WARD CURRENT vs FOR WARD
VOLTAGE DR OP FIGURE 20. RECOVERY TIM ES vs FORWARD CURRENT
FIGURE 21. RECO VER Y TIMES vs RATE OF CHANGE OF
CURRENT FIGURE 22. STORE D CHARGE vs RA TE OF CHANGE OF
CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 20406080100
0
0.2
0.6
0.8
1.4
0.4
FREQUENCY = 1MHz
CIES
COES
CRES
1.2
1.0
V
GE
, GATE TO EMIT TER VOLTAG E (V)
9
1.8 10 12
2.0
2.4
2.2
11 13 14 15 16
2.6
2.8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 14A
I
CE
= 7A
I
CE
= 3.5A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
µ
s
123 5
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
04
0
10
15
20
25
25oC
125oC
5
35
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
30
60
40
20
0
trr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
0
80
2 8 12 14
dIEC/dt = 200A/µs125oC trr
25oC tb
25oC ta
25oC trr
100
10
125oC tb
64
125oC ta
200 300 400 600 700
trr, RECOVERY TIMES (ns)
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
100 500
10
50
20
30
40
60 IEC = 7A, VCE = 390V
125oC tb
25oC ta
25oC tb
125oC ta
300
200
100
0
Qrr, REVERSE RECOVERY CHARGE (nc)
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
400100 200 300
400
500 600 700
125oC, IEC = 7A
125oC, IEC = 3.5A
25oC, IEC = 3.5 A
25oC, IEC = 7A
VCE = 390V
500
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTIO N TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS
RG = 25Ω
L = 1mH
VDD = 390V
+
-
HGTG7N60A4D
DUT
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling thes e devices, care
should be exercised to assure that the static charge built in
the hand ler’s body capa citance is not discha rged through th e
de v ic e . With proper han dling and applicatio n procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons sh ould be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Voltage Rating - Nev er e xc eed the gate- vol tage
rating of VGEM. Exceeding the rated V GE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of thes e de vices are
essentially capacitors. Circuits that leave the gate open-
circuit ed or floating shoul d be a v oide d. Thes e condi tions
can resu lt i n turn-on of th e device due to v o ltage build up
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an e xternal Zener is recommended.
Operating Frequency Information
Operating frequency infor mation for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined b y PD=(T
JM -T
C)/RθJC.
The sum of device switching and con duc ti on lo sses must
not exceed PD. A 50% duty factor was used ( Figure 3) and
the condu cti on lo sse s (PC) are approx imated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integr al of the instan tan eou s po wer loss
(ICE xV
CE) during turn-off . All tai l los se s are incl ude d in the
calculation for E OFF; i.e., the collector current eq uals zero
(ICE = 0).
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
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