Single Diode Super Fast Recovery Diode M1FL20U MS+@i OUTLINE Package : M1F 200V 1.1A res e/)\QJSMD Small SMD oR /TA Low Noise tr=35ns trr=35ns eA4 vF VOR eDC/DCIYI\-4 = DC/DC Converter e734 hIL * Fly Wheel RB. OA, fR8A Lighting e7mfs.FA Mew RATINGS Home Appliance, Office Automation, Communication, Factory Automation AYE? Cathode mark Hh _=S Gy hddts (ba) Unit-mm Weight 0.0272(Typ) Switching Regulator 1 Ci SEEM IOv Titer Webtt 4 bit CER de) & OB FSv.. SRR ZeRICOV TERE the COE F Sv. For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection". @M@XtRATH Absolute Maximum Ratings GizOez a T/=25C) Item Symbol] Conditions hee Mipt2OU Unit CAE mI aa ies Storage Temperature Tstg 55~ 150 c He tribe Operation Junction Temperature Tj 150 Cc 2 TE T Maximum Reverse Voltage Vem 200 V TS FMI 11 Ha ine I S0Hz isk, Mati, Ta = 25C On alumina substrate d \ Average Rectified Forward Current o SOHz sine wave, Resistance load, Ta=25C | 1) MEAG ae On glass-epoxy substrate 0.75 eA I SOHzIEGkR, JER LI ob A, T] = 25T 30 A Peak Surge Forward Current FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C @BAN- MASH Electrical Characteristics G#zOe T/=25C) Nae ; ee 2 AME 3 Forward Voltage Vr Ir=L1A, pulse measurement MAX 0,98 V We He - AL Ase Reverse Current Ik Vr=VRM, Pulse measurement MAX 10 uA Fane HOMeNsr) Time trr Ir =0.5A, IR=1A MAX 35 ns : Heaib- 9 Fal ail Junction to lead MAX 20 ABEL Twi tee ? Thermal Resistance : Hee et ADAH On alumina substrate MAX 108 C/W dja Junction to ambient Fi) y p AAI MAX 186 On glass-epoxy substrate 148 (J532-1) www.shindengen.co.jp/product/semi/ Small SMD Super FRD (Single) M1FL20U Miistt) CHARACTERISTIC DIAGRAMS NT eas tte Forward Current Ir (A) & Forward Voltage TH=1arC( ~ T= 18rC(TYP) -Ti= 27C(MAX) Ti= 25C(TYP) [Pulse measur ement] Forward Voltage Vr (V] MBAR ARR Forward Power Dissipation Forward Power Dissipation Pr [W] Average Rectified Forward Current Io (A) CAYO Ti at Peak Surge Forward Current Capability Sine wave Z lOms 1Qmst ___+ leyele a Tj=ac Peak Surge Forward Current Irsm (A) Number of Cycles (cycle) 2 1}5IN Average Rectified Forward Current Io (A) F4L-F4+YFh7 Ta-lo Derating Curve Ta-lo On alumina substrate oe lo VR Ve= Vim a D=tp/T Ambient Temperature Ta (C) On glass-epoxy substrate g==tE=k=10 q Ve a Ve=Veq aa D=tp/T Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) On glassepoxy | On alumina substrate substrate Soldering land 2mm" 2mm" Conductor layer S5pum 204m Substrate thickness - 0,64mm ose Junction Capacitance Cj (pF) Junction Capacitance Reverse Voltage Vr (V] * Sine wave (i 50Hz Cillig LT EF. * 50Hz sine wave is used for measurements. EMER OPES MM [89 YA eho TB) ETS Typical lt#iatin ede LTE TF. * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 149