General Description Features Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Repetitive Reverse Voltage : VRRM=1200V Low Forward Voltage : VF(typ.) = 2.2V Average Forward Current : IF(Av.)=100A @TC=100 Ultra-Fast Reverse Recovery Time : trr(typ.) = 40ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Isolation Type Package Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply E301932 SOT-227 Equivalent Circuit Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Conditions Symbol Rating Unit VRRM 1200 V VR(DC) 960 V 200 A 100 A IFSM 1400 A I2t 8.13* 103 A2s Junction Temperature TJ -40 ~ 150 Maximum Power Dissipation PD 270 W Visol 2500 V Tstg -40 ~ 125 - 1.45 N.m - 1.45 N.m - 30 g Repetitive Peak Reverse Voltage Reverse DC Voltage o TC=25 C Average Forward Current Surge(non-repetitive) Forward I2t for Fusing Isolation Voltage TC=100oC Current Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj= 25 Start @AC 1 minutes Storage Temperature Mounting Torque Terminal Torque Typical Including Screws Weight Mar. 2013. Version 2.0 1 IF(AV) MagnaChip Semiconductor Ltd. MPSC2N100U120 1200V FRD Module MPSC2N100U120 1200V FRD Module @Tc = 25oC(unless otherwise specified) Characteristics Conditions Cathode Anode Breakdown Voltage IR=100uA Diode Maximum Forward Voltage IF=100A Symbol Min. Typ. Max. Unit VR 1200 - - V - 2.2 2.8 - 2.0 - TC=25 VFM TC=100 Diode Peak Reverse Recovery Current Diode Reverse Recovery Time Diode Reverse Recovery Time Tc=100, VRRM applied IF =1A,VR=30V di/dt = -200A/uS IF =100A,VR=600V di/dt = -200A/uS V TC=100 IRRM - - 1.0 mA TC=25 trr - 40 60 ns - 110 - - 180 - Symbol Min. Typ. Max. Unit Rth(j-c) - - 0.46 /W TC=25 trr TC=100 ns Thermal Characteristics Characteristics Thermal Resistance(Isolation Type) Mar. 2013. Version 2.0 Conditions Junction to Case 2 MagnaChip Semiconductor Ltd. MPSC2N100U120 1200V FRD Module Electrical Characteristics Reverse Recovery Time[ns] 250 Forward Current,I F[A] 150 TC=25 TC=125 200 150 100 50 120 90 60 30 0 0 1 2 0 3 100 200 Forward Voltage Drop,VF[V] Fig.1 Typical Forward Voltage Drop vs. Instantaneous Forward Current 400 500 Fig.2 Typical Reverse Recovery Time Vs. -di/dt 250 Average Forward Current,I F(AVG)[A] 1 Thermal Response Zthjc[ /W] 300 di/dt[A/us] 0.1 0.01 1E-3 1E-4 1E-5 TC=25 1E-4 1E-3 0.01 0.1 1 150 DC 100 50 0 10 0 20 40 60 80 100 120 140 Case Temperatute, Tc[] Rectangular Pulse Duration Time[sec] Fig.3 Transient Thermal Impedance(Zthjc) Characteristics Mar. 2013. Version 2.0 200 Fig.4 Forward Current Derating Curve 3 MagnaChip Semiconductor Ltd. 160 MPSC2N100U120 1200V FRD Module 300 SOT-227 Dimensions are in millimeters, unless otherwise specified Mar. 2013. Version 2.0 4 MagnaChip Semiconductor Ltd. MPSC2N100U120 1200V FRD Module Package Dimension MPSC2N100U120 1200V FRD Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2013. Version 2.0 5 MagnaChip Semiconductor Ltd.