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FEATURES
1
2
3
4
8
7
6
5
OUT1
IN1−
IN1+
VCC−
VCC+
OUT2
IN2−
IN2+
D PACKAGE
(TOP VIEW)
DESCRIPTION/ORDERING INFORMATION
IN+
IN− OUT
+
−
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
•Controlled Baseline •Low Input Offset Voltage . . . 0.15 mV– One Assembly/Test Site, One Fabrication •Low Total Harmonic Distortion . . . 0.002%Site
•High Slew Rate . . . 7 V/ µs•Enhanced Diminishing Manufacturing Sources
•High-Gain Bandwidth Product . . . 16 MHz(DMS) Support
•High Open-Loop AC Gain . . . 800 at 20 kHz•Enhanced Product-Change Notification
•Large Output-Voltage Swing . . . 14.1 V to•Qualification Pedigree
(1)
–14.6 V•Dual-Supply Operation . . . ±5 V to ±18 V
•Excellent Gain and Phase Margins•Low Noise Voltage . . . 4.5 nV/ √Hz(1) Component qualification in accordance with JEDEC andindustry standards to ensure reliable operation over anextended temperature range. This includes, but is not limitedto, Highly Accelerated Stress Test (HAST) or biased 85/85,temperature cycle, autoclave or unbiased HAST,electromigration, bond intermetallic life, and mold compoundlife. Such qualification testing should not be viewed asjustifying use of this component beyond specifiedperformance and environmental limits.
The MC33078-EP is a bipolar dual operational amplifier with high-performance specifications for use in qualityaudio and data-signal applications. This device operates over a wide range of single- and dual-supply voltagesand offers low noise, high-gain bandwidth, and high slew rate. Additional features include low total harmonicdistortion, excellent phase and gain margins, large output voltage swing with no deadband crossover distortion,and symmetrical sink/source performance.
ORDERING INFORMATION
T
A
PACKAGE
(1)
ORDERABLE PART NUMBER TOP-SIDE MARKING
–55 °C to 125 °C SOIC – D Reel of 2500 MC33078MDREP 33078M
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available atwww.ti.com/sc/package.
SYMBOL (EACH AMPLIFIER)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2006, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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Absolute Maximum Ratings
(1)
Recommended Operating Conditions
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC+
Supply voltage
(2)
18 VV
CC–
Supply voltage
(2)
–18 VV
CC–
to V
CC+
Supply voltage 36 VInput voltage, either input
(2) (3)
V
CC–
or V
CC+
VInput current
(4)
±10 mADuration of output short circuit
(5)
Unlimitedθ
JA
Package thermal impedance
(6) (7)
97 °C/WT
J
Operating virtual junction temperature 150 °CT
stg
Storage temperature range
(8)
–65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under Recommended OperatingConditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2) All voltage values, except differential voltages, are with respect to the midpoint between V
CC+
and V
CC–
.(3) The magnitude of the input voltage must never exceed the magnitude of the supply voltage.(4) Excessive input current will flow if a differential input voltage in excess of approximately 0.6 V is applied between the inputs, unlesssome limiting resistance is used.(5) The output may be shorted to ground or either power supply. Temperature and/or supply voltages must be limited to ensure themaximum dissipation rating is not exceeded.(6) Maximum power dissipation is a function of T
J
(max), θ
JA
, and T
A
. The maximum allowable power dissipation at any allowable ambienttemperature is P
D
= (T
J
(max) – T
A
)/ θ
JA
. Operating at the absolute maximum T
J
of 150 °C can affect reliability.(7) The package thermal impedance is calculated in accordance with JESD 51-7.(8) Long-term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction ofoverall device life. See http://www.ti.com/ep_quality for additional information on enhanced plastic packaging.
MIN MAX UNIT
V
CC–
–5 –18Supply voltage VV
CC+
5 18T
A
Operating free-air temperature –55 125 °C
2
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Electrical Characteristics
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
V
CC–
= –15 V, V
CC+
= 15 V, T
A
= 25 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
T
A
= 25 °C 0.15 2V
IO
Input offset voltage V
O
= 0, R
S
= 10 Ω, V
CM
= 0 mVT
A
= –55 °C to 125 °C 3Input offset voltageαV
IO
V
O
= 0, R
S
= 10 Ω, V
CM
= 0 T
A
= –55 °C to 125 °C 2 µV/ °Ctemperature coefficient
T
A
= 25 °C 300 750I
IB
Input bias current V
O
= 0, V
CM
= 0 nAT
A
= –55 °C to 125 °C 800T
A
= 25 °C 25 150I
IO
Input offset current V
O
= 0, V
CM
= 0 nAT
A
= –55 °C to 125 °C 175Common-mode
V
ICR
∆V
IO
= 5 mV, V
O
= 0 ±13 ±14 Vinput voltage range
T
A
= 25 °C 90 110Large-signal differentialA
VD
R
L
≥2 k Ω, V
O
=±10 V dBvoltage amplification
T
A
= –55 °C to 125 °C 80V
OM+
10.7R
L
= 600 Ω
V
OM–
–11.9V
OM+
13.2 13.8Maximum outputV
OM
V
ID
=±1 V R
L
= 2k ΩVvoltage swing
V
OM–
–13.2 –13.7V
OM+
13.5 14.1R
L
= 10k Ω
V
OM–
–14 –14.6CMMR Common-mode rejection ratio V
IN
=±13 V 80 100 dBk
SVR
(1)
Supply-voltage rejection ratio V
CC+
= 5 V to 15 V, V
CC–
= –5 V to –15 V 80 105 dBSource current 15 29I
OS
Output short-circuit current |V
ID
| = 1 V, Output to GND mASink current –20 –37T
A
= 25 °C 2.05 2.5Supply currentI
CC
V
O
= 0 mA(per channel)
T
A
= –55 °C to 125 °C 3.5
(1) Measured with V
CC ±
differentially varied at the same time
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Operating Characteristics
D.U.T.
Voltage Gain = 50,000
Scope
x 1
RIN = 1.0 MΩ
+
−
100 kΩ
10 Ω
0.1 µF
100 kΩ
0.1 µF
24.3 kΩ
4.7 µF
2.0 kΩ
2.2 µF
22 µF
110 kΩ
4.3 kΩ
1/2
MC33078-EP
NOTE: All capacitors are nonpolarized.
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
V
CC–
= –15 V, V
CC+
= 15 V, T
A
= 25 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SR Slew rate at unity gain A
VD
= 1, V
IN
= –10 V to 10 V, R
L
= 2 k Ω, C
L
= 100 pF 5 7 V/ µsGBW Gain bandwidth product f = 100 kHz 16 MHzB
1
Unity gain frequency Open loop 9 MHzC
L
= 0 pF –11Gain margin R
L
= 2 k ΩdBC
L
= 100 pF –6C
L
= 0 pF 55φ
m
Phase margin R
L
= 2 k ΩdegC
L
= 100 pF 40Amplifier-to-amplifier isolation f = 20 Hz to 20 kHz –120 dBPower bandwidth V
O
= 27 V
(PP)
, R
L
= 2 k Ω, THD ≤1% 120 kHzTHD Total harmonic distortion V
O
= 3 V
rms
, A
VD
= 1, R
L
= 2 k Ω, f = 20 Hz to 20 kHz 0.002 %z
o
Open-loop output impedance V
O
= 0, f = 9 MHz 37 Ωr
id
Differential input resistance V
CM
= 0 175 k ΩC
id
Differential input capacitance V
CM
= 0 12 pFV
n
Equivalent input noise voltage f = 1 kHz, R
S
= 100 Ω4.5 nV/ √HzI
n
Equivalent input noise current f = 1 kHz 0.5 pA/ √Hz
Figure 1. Voltage Noise Test Circuit (0.1 Hz to 10 Hz
p-p
)
4
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TYPICAL CHARACTERISTICS
0
100
200
300
400
500
600
5 6 7 8 9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
IIB – Input Bias Current – nA
VCM = 0 V
TA= 25°C
0
100
200
300
400
500
600
-15 -10 -5 0 5 10 15
VCM – Common Mode Voltage – V
IIB – Input Bias Current – nA
0
100
200
300
400
500
600
700
800
900
1000
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
IIB – Input Bias Current – nA
VCC+ = 15 V
VCC– = –15 V
VCM = 0 V
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
VIO – Input Offset Voltage – mV
VCC+ = 15 V
VCC– = –15 V
VCM = 0 V
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
INPUT BIAS CURRENT INPUT BIAS CURRENTvs vsCOMMON-MODE VOLTAGE SUPPLY VOLTAGE
INPUT BIAS CURRENT INPUT OFFSET VOLTAGEvs vsTEMPERATURE TEMPERATURE
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0
0.2
0.4
0.6
0.8
1
1.2
1.4
-55 -25 5 35 65 95 125
TA– Temperature – °C
Input Common-Mode Voltage Low
Proximity to V CC– – V
VCC+ = 3 V to 15 V
VCC– = -3 V to -15 V
èVIO = 5 mV
VO= 0 V
D
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-55 -25 5 35 65 95 125
TA– Temperature – °C
Input Common-Mode Voltage High
Proximity to V CC+ – V
VCC+ = 3 V to 15 V
VCC– = -3 V to -15 V
VIO = 5 mV
VO= 0 V
D
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
RL– Load Resistance – k@
Output Saturation Voltage
Proximity to V CC– – V
T = –55°C
A
T = 25°C
A
T = 125°C
A
kW
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
RL– Load Resistance – kh
Output Saturation Voltage
Proximity to V CC+ – V
T = –55°C
A
T = 25°C
A
T = 125°C
A
kW
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
INPUT COMMON-MODE VOLTAGE INPUT COMMON-MODE VOLTAGELOW PROXIMITY TO V
CC–
HIGH PROXIMITY TO V
CC+vs vsTEMPERATURE TEMPERATURE
OUTPUT SATURATION VOLTAGE PROXIMITY TO V
CC+
OUTPUT SATURATION VOLTAGE PROXIMITY TO V
CC–vs vsLOAD RESISTANCE LOAD RESISTANCE
6
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10
20
30
40
50
60
70
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
IOS – Output Short-Circuit Current – mA
VCC+ = 15 V
VCC– = –15 V
VID = 1 V
Sink
Source
0
1
2
3
4
5
6
7
8
9
10
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
ICC – Supply Current – mA
VCM = 0 V
RL= High Impedance
VO= 0 V
V = 15 V
CC±±
V = 10 V
CC±±
V = 5 V
CC±±
0
10
20
30
40
50
60
70
80
90
100
1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07
f – Frequency – Hz
CMMR – dB
100 1k 10k 100k 1M 10M
V = 15 V
V = –15 V
V = 0 V
V = 1.5 V
T = 25°C
CC+
CC–
CM
CM
A
D ±
0
10
20
30
40
50
60
70
80
90
100
110
120
1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07
f – Frequency – Hz
PSRR – dB
100 1k 10k 100k 1M 10M
V = 15 V
V = –15 V
T = 25°C
CC+
CC–
A
T3P
T3N
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
OUTPUT SHORT-CIRCUIT CURRENT SUPPLY CURRENTvs vsTEMPERATURE TEMPERATURE
CMRR PSSRvs vsFREQUENCY FREQUENCY
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0
5
10
15
20
25
30
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
GBW – Gain Bandwidth Product – MHz
0
5
10
15
20
25
30
5 6 7 8 9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
GBW – Gaind Bandwidth Product – MHz
0
5
10
15
20
25
30
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07
f – Frequency – Hz
VO– Output Voltage – V
100 1k 10k 100k 1M 10M
10
V = 15 V
V = –15 V
R = 2 k
A = 1
THD < 1%
T = 25°C
CC+
CC–
L
V
A
W
-20
-15
-10
-5
0
5
10
15
20
5 6 7 8 9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
VO – Output Voltage – V
R = 10 k
LW
R = 2 k
LW
R = 10 k
LW
R = 2 k
LW
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
GAIN BANDWIDTH PRODUCT GAIN BANDWIDTH PRODUCTvs vsSUPPLY VOLTAGE TEMPERATURE
OUTPUT VOLTAGE OUTPUT VOLTAGEvs vsSUPPLY VOLTAGE FREQUENCY
8
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80
85
90
95
100
105
110
5 6 7 8 9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
AV– Open-Loop Gain – dB
R = 2 k
f < 10 Hz
V = 2/3(V – V )
T = 25°C
L
O CC+ CC–
A
W
D
80
85
90
95
100
105
110
115
120
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
AV– Open-Loop Gain – dB
R = 2 k
f < 10 Hz
V = 2/3(V – V )
T = 25°C
L
O CC+ CC–
A
W
D
100
110
120
130
140
150
160
170
180
190
200
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05
f – Frequency – Hz
Crosstalk Rejection – dB
1k 10k 100k
Drive Channel
V = 15 V
V = –15 V
R = 2 k
V = 20 V
T = 25°C
CC+
CC–
L
O PP
A
W
10 100
0
5
10
15
20
25
30
35
40
45
50
1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07
f – Frequency – Hz
ZO– Output Impedance –
VCC+ = 15 V
VCC– = –15 V
VO= 1 Vrms
TA= 25°C
W
1k 10k 100k 1M 10M
A = 1
V
A = 10
V
A = 100
V
A = 1000
V
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
OPEN-LOOP GAIN OPEN-LOOP GAINvs vsSUPPLY VOLTAGE TEMPERATURE
OUTPUT IMPEDANCE CROSSTALK REJECTIONvs vsFREQUENCY FREQUENCY
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0.0001
0.001
0.01
0.1
1
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05
f – Frequency – Hz
THD – Total Harmonic Distortion – %
1k 10k 100k
V = 15 V
V = –15 V
V = 1 V
A = 1
R = 2 k
T = 25°C
CC+
CC–
O rms
V
L
A
W
10 100
0.0001
0.001
0.01
0.1
1
0 1 2 3 4 5 6 7 8 9
VO– Output Voltage – Vrms
THD – Total Harmonic Distortion – %
V = 15 V
V = –15 V
f = 2 kHz
R = 2 k
T = 25°C
CC+
CC–
L
A
W
A = 1
V
A = 10
V
A = 100
V
A = 1000
V
2
3
4
5
6
7
8
9
10
5 6 7 8 9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
SR – Slew Rate – V/µs
Falling Edge
Rising Edge
V = 2/3(V – V )
A = 1
R = 2 k
T = 25°C
D
W
IN CC+ CC–
V
L
A
2
3
4
5
6
7
8
9
10
-55 -35 -15 5 25 45 65 85 105 125
TA– Temperature – °C
SR – Slew Rate – V/µs
V = 15 V
V = –15 V
CC+
CC–
V = 20 V
A = 1
R = 2 k
D
W
IN
V
L
Falling Edge
Rising Edge
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTIONvs vsFREQUENCY OUTPUT VOLTAGE
SLEW RATE SLEW RATEvs vsSUPPLY VOLTAGE TEMPERATURE
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0
10
20
30
40
50
60
70
80
1.E+03 1.E+04 1.E+05 1.E+06 1.E+07
f – Frequency – Hz
Gain – dB
-180
-135
-90
-45
0
Phase Shift – deg
V = 15 V
V = –15 V
CC+
CC–
R = 2 k
T = 25°C
L
A
W
100k 1M 10M
1k 10k
Phase
Gain
0
3
6
9
12
1 10 100 1000
Cout – Output Load Capacitance – pF
Gain Margin – dB
0
10
20
30
40
50
60
70
80
Phase Margin – deg
Gain, T = 125°C
A
Gain, T = 25°C
A
Gain, T = –55°C
A
Phase, T = 125°C
A
Phase, T = 25°C
A
Phase, T = –55°C
A
V = 15 V
V = –15 V
CC+
CC–
V = 0 V
O
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
Cout – Output Load Capacitance – pF
Overshoot – %
VCC+ = 15 V
VCC– = –15 V
VIN = 100 mVPP
T = 125°C
A
T = 25°C
A
T = –55°C
A
1
10
100
10 100 1000 10000 100000
f – Frequency – Hz
Input Voltage Noise – nV/rtHz
0.1
1
10
Input Current Noise – pA/rtHz
VCC+ = 15 V
VCC– = –15 V
TA= 25°C
Input Voltage Noise
Input Current Noise
10 100 1k 10k 100k
pA/ÖHz
nV/ÖHz
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
GAIN AND PHASE GAIN AND PHASE MARGINvs vsFREQUENCY OUTPUT LOAD CAPACITANCE
OVERSHOOT INPUT VOLTAGE AND CURRENT NOISEvs vsOUTPUT LOAD CAPACITANCE FREQUENCY
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1
10
100
1000
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06
RS– Source Resistance – è
Input Referred Noise Voltage – nV/rtHz
VCC+ = 15 V
VCC– = –15 V
f = 1 Hz
TA= 25°C
W
10 100 1k 10k 100k
nV/ÖHz
1M
0
2
4
6
8
10
12
14
16
0 1 10 10 0 10 0 0 10 0 0 0 10 0 0 0 0
RSD – Differential Source Resistance – è
Gain Margin – dB
0
4
8
12
16
2 0
2 4
2 8
3 2
3 6
4 0
4 4
4 8
5 2
5 6
6 0
6 4
Phase Margin – deg
VCC+ = 15 V
VCC– = –15 V
AV= 100
VO= 0 V
TA= 25°C
Phase Margin
Gain Margin
W
1k 10k 100k
1000 110
-15
-5
5
15
25
35
45
55
-2 2 6 10 14 18 22
Time – µs
VO– Output Voltage – V
-60
-50
-40
-30
-20
-10
0
10
VI– Input Voltage – V
V = 15 V
V = –15 V
A = 1
R = 2 k
C
T = 25°C
CC+
CC–
V
L
A
W
L= 100 pF
Input
Output
-15
-5
5
15
25
35
45
55
-2 2 6 10 14 18 22
Time – µs
VO– Output Voltage – V
-60
-50
-40
-30
-20
-10
0
10
VI– Input Voltage – V
V = 15 V
V = –15 V
A = –1
R = 2 k
C
T = 25°C
CC+
CC–
V
L
A
W
L= 100 pF
Input
Output
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
INPUT REFERRED NOISE VOLTAGE GAIN AND PHASE MARGINvs vsSOURCE RESISTANCE DIFFERENTIAL SOURCE RESISTANCE
LARGE SIGNAL TRANSIENT RESPONSE LARGE SIGNAL TRANSIENT RESPONSE(A
V
= 1) (A
V
= –1)
12
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-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
-0.5 0.0 0.5 1.0 1.5
Time – µs
VO– Output Voltage – V
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
VI– Input Voltage – V
V = 15 V
V = –15 V
A = 1
R = 2 k
C
T = 25°C
CC+
CC–
V
L
A
W
L= 100 pF
Input
Output
-500
-400
-300
-200
-100
0
100
200
300
400
-5 -4 -3 -2 -1 0 1 2 3 4 5
Time – s
Input Voltage Noise – nV
T3
VCC+ = 15 V
VCC– = –15 V
BW = 0.1 Hz to 10 Hz
TA= 25°C
MC33078-EPDUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
SMALL SIGNAL TRANSIENT RESPONSE LOW_FREQUENCY NOISE
13Submit Documentation Feedback
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APPLICATION INFORMATION
Output Characteristics
0.25 V per Division
250 ns per Division
Maximum capacitance
before oscillation = 380 pF
250 ns per Division
0.25 V per Division
Maximum capacitance
before oscillation = 560 pF
250 ns per Division
0.25 V per Division
Maximum capacitance
before oscillation = 590 pF
250 ns per Division
0.25 V per Division
250 ns per Division
0.25 V per Division
250 ns per Division
0.25 V per Division
5V
–5V
15V
–15V
ROVO
R = 2 k
LΩ
CL
MC33078-EP
DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
SLOS495 – OCTOBER 2006
All operating characteristics are specified with 100-pF load capacitance. The MC33078 can drive highercapacitance loads. However, as the load capacitance increases, the resulting response pole occurs at lowerfrequencies, causing ringing, peaking, or oscillation. The value of the load capacitance at which oscillationoccurs varies from lot to lot. If an application appears to be sensitive to oscillation due to load capacitance,adding a small resistance in series with the load should alleviate the problem (see Figure 2 ).
PULSE RESPONSE PULSE RESPONSE PULSE RESPONSE(R
L
= 600 Ω, C
L
= 380 pF) (R
L
= 2 k Ω, C
L
= 560 pF) (R
L
= 10 k Ω, C
L
= 590 pF)
PULSE RESPONSE PULSE RESPONSE PULSE RESPONSE(R
O
= 0 Ω, C
O
= 1000 pF, R
L
= 2 k Ω) (R
O
= 4 Ω, C
O
= 1000 pF, R
L
= 2 k Ω) (R
O
= 35 Ω, C
O
= 1000 pF, R
L
= 2 k Ω)
Figure 2. Output Characteristics
14
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PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
MC33078MDREP ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MC33078MDREPG4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
V62/07606-01XE ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF MC33078-EP :
•Catalog: MC33078
NOTE: Qualified Version Definitions:
•Catalog - TI's standard catalog product
PACKAGE OPTION ADDENDUM
www.ti.com 2-Feb-2009
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
MC33078MDREP SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
MC33078MDREP SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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