1
Item Symbol Ratings Unit
Drain-source voltage V DS 450
VDSX *5 450
Continuous drain current ID±17
Pulsed drain current ID(puls] ±68
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 17
Maximum Avalanche Energy EAS *1 221.9
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 1.67
Tc=25°C 225
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3694-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V
ID=8.5A VGS=10V
ID=8.5A VDS=25V
VCC=300V ID=8.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.556
75.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=225V
ID=17A
VGS=10V
L=1.41mH Tch=25°C
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
450
3.0 5.0
25
250
100
0.29 0.38
714
1275 1900
200 300
9.5 14
27 40
27 40
48 72
711
33 50
913
10.5 16
17 1.20 1.80
0.57
6.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
T-Pack
Gate(G)
Source(S)
Drain(D)
200305
*4 VDS 450V *5 VGS=-30V
<
=
*1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
P4
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2
Characteristics
2SK3694-01L,S,SJ FUJI POWER MOSFET
0 255075100125150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
048121620
0
5
10
15
20
25
30
20V 10V
8V
7.5V
7.0V
ID [A]
VDS [V]
Typical Output Characteris ti c s
ID=f(VDS):80 µs pulse test,Tch=25 °C
VGS=6.5V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse tes t,VDS=25V,Tch=25°C
0.1 1 10
1
10
gfs [S]
ID [A]
Typical T ransconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tc h=25°C
0 5 10 15 20 25 30 35
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RDS(o n) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistanc e
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On -state Re sistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
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3
2SK3694-01L,S,SJ FUJI POWER MOSFET
0 5 10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Charact e ri st i c s
VGS=f(Qg):ID=17A,Tch=25°C
VGS [V]
360V
225V
Vcc= 90V
10-1 100101102103
10-3
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacit anc e
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600 IAS=7A
IAS=11A
IAS=17A
EAS [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. s tar ti ng Tch
EAS=f(s t a rt ing T c h):Vcc = 45V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
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4
2SK3694-01L,S,SJ FUJI POWER MOSFET
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Curr ent Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=45V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c ) [°C/W]
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
Outline Drawings (mm)
Type(S) Type(SJ)
1 2 3 1
2
3
Type(L)
1
2
3
1 2 3
4
4
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