SEMICONDUCTOR KTX211E TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 A1 (Thin Extreme Super mini type with 6 leads.) C Including two devices in TES6. D Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT Q2 OUT J C P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 H Q1 P DIM A A1 B B1 C D H J P R1 IN B Q2 R1=2.2K R2=2.2K R2 E COMMON EQUIVALENT CIRCUIT (TOP VIEW) 6 5 6 Q2 2 1 3 Q1 MAXIMUM RATING (Ta=25 (EMITTER) (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) (COLLECTOR) Type Name 4 5 BF Q1 1 Q1 Q1 Q2 Q2 Q2 Q1 TES6 Marking 4 1. 2. 3. 4. 5. 6. 2 3 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V IC -500 Collector Current ICP * -1 * Single pulse Pw=1mS. Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Output Voltage VO 50 V Input Voltage VI 12, -10 V Output Current IO 100 SYMBOL RATING PD * 200 Tj 150 Tstg -55 150 Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range UNIT * Total Raing. 2002. 10. 30 Revision No : 0 1/4 KTX211E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION ICBO Collector Cut-off Current MIN. TYP. MAX. UNIT - - -100 nA VCB=-15V, IE=0 Collector-Base Breakdown Voltage V(BR)CBO IE=-10 A -15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V 270 - 680 - IC=-200mA, IB=-10mA - -100 -250 mV VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz VCB=-10V, IE=0, f=1MHz - 6.5 - pF MIN. TYP. MAX. UNIT. hFE DC Current Gain VCE=-2V, IC=-10mA VCE(sat) Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION IO(OFF) VO=50V, VI=0 - - 500 GI VO=5V, IO=20 20 - - Output Voltage VO(ON) IO=10 , II=0.5 - 0.1 0.3 V Input Voltage (ON) VI(ON) VO=0.3V, IO=20 - 1.83 3 V Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 0.5 1.15 - V Transition Frequency fT * VO=10V, IO=5 - 250 - VI=5V - - 3.8 Output Cut-off Current DC Current Gain II Input Current Note : * Characteristic of Transistor Only. 2002. 10. 30 Revision No : 0 2/4 KTX211E Q 1 (PNP TRANSISTOR) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE(sat) - I C 500 Ta=25 C 300 Ta=-40 C 100 50 30 VCE =-2V -1 -1K -30 -100 -300 -1K -3 -10 -30 -100 -300 -1 -10 -30 -100 -300 I C /IB =20 -3K Ta=-40 C -1K Ta=25 C C Ta=125 -500 -300 -1 -3 -10 -30 -100 -300 TRANSITION FREQUENCY f T (MHz) f T - IC -0.5 -1.0 BASE-EMITTER VOLTAGE VBE (V) Revision No : 0 -1.5 -1K -5K I C - VBE -5 -3 0 -3 COLLECTOR CURRENT I C (mA) Ta=1 25 C -10 -1 COLLECTOR CURRENT I C (mA) -100 2002. 10. 30 -5 -3 -1K VCE =-2V -50 -30 C 25 C C Ta= =-40 Ta -10 -100 -1 -1K Ta= -10K I C /IB =20 I C /IB =10 -500 -300 125 -50 -30 VBE(sat) - I C -5 -3 -1 -100 VCE(sat) - I C I C /IB =50 -10 I C /IB =20 COLLECTOR CURRENT I C (mA) -100 -50 -30 -1K -500 -300 COLLECTOR CURRENT I C (mA) Ta=25 C -500 -300 -1 COLLECTOR CURRENT I C (mA) -10 -3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) Ta=125 C Ta=2 5 C Ta=40 C DC CURRENT GAIN h FE 1K 1K -1K VCE =-2V Ta=25 C 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) 3/4 KTX211E Q 1 (PNP TRANSISTOR) 1K COLLECTOR LPOWER DISSIPATION PC (mW) COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) Cob - VCB , C ib - VEB I E =0A f=1MHz Ta=25 C 500 300 100 50 30 C ib 10 C ob 5 3 1 -0.1 -0.3 -1 -3 -10 -30 Pc - Ta 250 200 150 100 50 0 0 25 -100 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 3k Ta=100 C 1 0.5 0.3 VO =0.2V 0.1 0.1 0.3 1 3 10 DC CURRENT GAIN G I C 300 100 50 VO =5V 30 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT OFF VOLTAGE V I(OFF) (V) INPUT ON VOLTAGE V I(ON) (V) GI - IO Q2 300 500 Ta=-25 C Ta=25 C Ta=-25 C 1k Ta=25 10 5 3 OUTPUT CURRENT I O (A) 50 30 I O - V I(OFF) Q2 Ta=100 C 100 OUTPUT CURRENT I O (mA) I O - V I(ON) Q2 100 50 30 00 =1 Ta 10 C Ta=25 C Ta=-25 C 5 VO =5V 3 1 3 10 30 100 OUTPUT CURRENT I O (mA) 2002. 10. 30 Revision No : 0 4/4