© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1Publication Order Number:
MMBT3416LT3/D
MMBT3416LT3G
General Purpose Amplifier
NPN Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector −Emitter Voltage VCEO 40 Vdc
Collector −Base Voltage VEBO 4.0 Vdc
Collector Current − Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
1
GP M G
G
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT3416LT3G SOT−23
(Pb−Free)
10,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
GP = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 40 −Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 4.0 −Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO1 −100 nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO −100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 4.5 Vdc)
hFE 75 225 −
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
VCE(sat) −0.3 Vdc
Base −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
VBE(sat) 0.6 1.3 Vdc
SMALL−SIGNAL CHARACTERISTICS
Collector Cutoff Current
(VCB = 18 Vdc, TA = 100°C)
ICBO2 −15 mAdc
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)
hFE 75 − −
Figure 1. Turn−On Time Figure 2. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 p
F
1N916
300 ns
DUTY CYCLE = 2% +10.9 V
-0.5 V
<1.0 ns
10 < t1 < 500 ms
DUTY CYCLE = 2% +10.9 V
0
-9.1 V <1.0 ns
t1
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3
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1k 2k 5k 10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100 mA
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
RS ≈∞
10 mA
300 mA
IC = 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (mA)
500k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (mA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
RS, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF +20 log10 ǒen2)4KTRS)In2RS2
4KTRSǓ1ń2
= Noise Voltage of the Transistor referred to the input. (Figure
3
= Noise Current of the Transistor referred to the input. (Figure
4
= Boltzman’s Constant (1.38 x 10−23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB
6.0 dB 10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB 3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
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4
TYPICAL STATIC CHARACTERISTICS
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT GAIN
FE
TJ = 125°C
-55°C
25°C
VCE = 1.0 V
VCE = 10 V
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 10. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*qVC for VCE(sat)
qVB for VBE
0.1 0.2 0.5
MPS390
4
Figure 11. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.002
MPS3904
TJ = 25°C
IC = 1.0 mA 10 mA 100 mA
Figure 12. Temperature Coefficients
50 mA
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
IB = 500 mA
400 mA
300 mA
200 mA
100 mA
*APPLIES for IC/IB ≤ hFE/2
25°C to 125°C
-55°C to 25°C
25°C to 125°C
-55°C to 25°C
40
60
0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35
1.2
1.0
0.8
0.6
0.4
0.2
0-2.4
0.8
0
-1.6
-0.8
1.0 2.0 5.0 10 20 50
1
0.1 0.2 0.5
200
100
80
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
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5
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 13. Turn−On Time
IC, COLLECTOR CURRENT (mA)
300
Figure 14. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
2.0 5.0 10 20 30 50
1000
Figure 15. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 16. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.01.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
T
h , OUTPUT ADMITTANCE ( mhos)
oe m
hie, INPUT IMPEDANCE (k )Ω
3.0
5.0
7.0
10
20
30
50
70
100
200
7.0 70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 0.5 Vdc
tr
10
20
30
50
70
100
200
300
500
700
2.0 5.0 10 20 30 50
3.01.0 7.0 70 1
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25°C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 200.05
TJ = 25°C
f = 1.0 MHz
Cib
Cob
2.0 5.0 10 20 50
1.0
0.2
100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1 0.2 0.5
MPS3904
hfe ≈ 200 @ IC = 1.0 mA
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
2.0 5.0 10 20 50
1.0
2.0
1
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1 0.2 0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
MPS3904
hfe ≈ 200 @ IC = 1.0 mA
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6
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 10
0
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 19A
Figure 19A.
TJ, JUNCTION TEMPERATURE (°C)
104
-4
0
IC, COLLECTOR CURRENT (nA)
Figure 20.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
2.0
IC, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the device
thermal response the normalized effective transient thermal
resistance of Figure 19 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 19 by the
steady state value RqJA.
Example:
The MPS3904 is dissipating 2.0 W peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 19. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
10-2
10-1
100
101
102
103
-2
0
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
TC = 25°C1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20 40
TJ = 150°C
100 ms
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MMBT3416LT3/D
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