TABLE 1 METAL TO-204, TO-204AE (continued) Resistive Switching IcCont | VoEO(sus} . ts tf fr Pp (Case) Amps Volts Device Type hFE @l us as @lg | MHz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 50 200 BUS51 15 min 50 350 400 MJ10015044 10 min 40 2.5 1 20 250 500 BUT340e## 15 min 32 3 1.5 32 250 MJ100160## 10 min 40 25 1 20 250 56 400 BUT330## 20 min 36 3.3 1.6 36 250 60 60 MJ14000 MJ14001 15/100 50 300 30 MJ14002 MJ14003 15/100 50 300 200 MJ100200## 75 min 15 3.5 0.5 30 250 250 MJ100210## 75 min 15 3.5 0.5 30 250 70 125 BUS50e 15 min 50 350 @ Modified TO-3, 60 mii pins, # |hfg| @ 1 MHz, ## Darlington TABLE 2 METAL TO-205 (Formerly TO-39) STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (Pin 3 connected to case) 241 CASE 79-04 (TO-205AD) Resistive Switching icCont | VcEO(sus) . ts tf fr Pp (Case) Amps Volts Device Type hE @l\c us ps @l | Mz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 0.5 300 MJ4646 20 min 0.5 0.72* 0.05 40 5 400 MJ4647 20 min 0.5 0.72* 0.05 30 5 3 40 2N3719 25/180 1 0.4* 1 60 6 2N3867 40/200 1.5 0.4* 1.5 60 6 60 2N3720 25/180 1 0.4* 1 60 6 2N3e68 30/150 1.5 0.4* 1.5 60 6 80 2N6303 30/150 1.6 0.4* 1.5 60 6 60 2N4877 20/100 4 15 0.5 4 4 10 80 2N5336 2N6190 30/120 2 2 0.2 2 30 6 2N5337 2N6191 60/240 2 2 0.2 2 30 6 100 2N5338 30/120 2 2 0.2 2 30 10 . 2N5339 2N6193 60/240 2 2 0.2 2 30 6 *toff [| JAN, JTX, JTXV Available 2-8TABLE 12 POWER DARLINGTONS (continued) Resistive Switching ai Verolsus} Device Type hpe | @le 3 i @le te "Osta Case Max Min NPN PNP Min/Max | Amp Max Max | Amp Min @ 25C JEDEC/MOT 50 90 MJ11030 MJ11031 400 min 50 300 TO-204/197 120 MJ11032 MJ11033 400 min 50 300 TO-204/197 400 MJ10015 10 min 40 2.5 0.5 20 10 250 TO-204/197 500 BUT34e 15 min 32 3 1.5 32 250 TO-204/197 MJ10016 10 min 40 2.5 0.5 20 10 250 TO-204/197 56 400 BUT33e 20 min 36 3.3 1.6 36 250 TO-204/197 60 200 MJ10020 75/1k min| 15 3.5 0.5 30 250 TO-204/197 250 MJ10021 75/ik min| 15 3.5 0.5 30 250 TO-204/197 Darlington with speed-up diode. TABLE 13 POWER SWITCHING TRANSISTORS VcEO < 200 V Resistive Switching Smpe VCEO(sus) Device Type hee @ Ic a 1s @l Mike rovers Case Max Min NPN PNP Min/Max | Amp | Max Max | Amp | Minj| @ 25C JEDEC/MOT 0.8 40 MPS-U02 MPS-U52 30 min 0.5 150 10 /152 1 120 MPS-U03 40 min 0.1 100 10 /152 180 MPS-U04 40 min 0.1 100 10 /152 2 30 MPS-U01 MPS-U51 50 min 1 50 10 /182 40 MPS-U01A MPS-US5S1A 50 min 1 50 10 /152 MPS-U45# MPS-U95# 4k min 1 100 10 /162 60 MPS-U05 MPS-U5S 60 min | 0.25 50 10 /152 80 MPS-U06 MPS-US56 60 min | 0.25 50 10 /162 100 MPS-U07 MPS-U57 60 min 0.25 50 10 /182 3 40 2N3719 25/180 2 0.4* 1 60 6 TO-205AA/31 2N3867 40/200 2 0.4* 1 60 6 TO-205AA/31 60 2N3720 25/180 2 0.4* 1 60 6 TO-205AA/31 2N3868 30/150 2 0.4* 1 60 6 TO-205AA/31 80 2N6303 30/150 2 0.4* 1 60 6 TO-205AA/31 # Dartington * toff @ 1 MHz (continued) 2-24MOTOROLA 2N3719, 2N3720 m= SEMICONDUCTOR SEE) =2N3867, 2N3868 TECHNICAL DATA 2N6303 SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and high- 3 AMPERE frequency amplifier applications. POWER TRANSISTORS Collector-Emitter Sustaining Voltage PNP SILICON VCEO{sus) = 40 Vde (Min) 2N3719,2N3867 =60 Vde (Min) 2N3720,2N3868 40,60,80 VOLTS = 80 Vde (Min) 2N6303 6 WATTS @ DC Current Gain hfe =25-180@Ic=1.0 Adc 2N3719,2N3720 = 40-200 @ ic = 1.5 Ade ~ 2N3867 = 30-150 @Ic=1.5 Adc ~ 2N3868,2N6303 Low Collector-Emitter Saturation Voltage VcE(sat) =0.75 Vde @I=1.0 Ade 2N3719,2N3720 Pe =0.75 Vde @ Ic =1.5 Ade 2N3867,2N3868, 2N6303 @ High Current-Gain Bandwidth Product fy = 90 MHz (Typ) @ 2N3867 JAN and 2N3868 JAN also Available *MAXIMUM RATINGS 2N3719 2N3720 Rating Symbol 2N3867 2N3868 2N6303 Unit Coltector-Emitter Voltage VCEO 40 60 80 Vde Collector-Base Voltage Ves 40 60 80 Vde Emitter-Base Voltage Ves 4.0 *| Vde Collector Current Cantinuaus le 3.0 ~____~ Ade Peak 0 Base Current ip 0.5 _____-= Adc Total Device Dissipation @ Tc = 25C PD 6.0 =] watts Derate above 25C . 3 mwiPC su "eearteR ole . PIN 1. EMIT D3p Tata! Device Dissipation @ Ta = 25C Po 1.0 ~]__ Watt 2. BASE Derate above 25C 8.71} mwic deortecton (#12036 000 [tT] a Operating and Storage Junction Temperature Range TaTstg | ~- -65 to +200 -+| C THERMAL CHARACTERISTICS cS _ Ne } Characteristic Symbol Max Unit M Thermal Resistance, Junction to Case A5C 29 cw J Thermal Resistance, Junction to Ambient Osa 175 ciw Indicates JEDEC Registered Data FIGURE 1 POWER DERATING Pp, POWER DISSIPATION (WATTS) 25 50 75 100 125 150 175 200 CASE 79-04 TO-205AD Tc, CASE TEMPERATURE (C) (TO-39) 3-322N3719, 2N3720, 2N3867, 2N3868, 2N6303 *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) | Characteristic | __symboi_ | Min [| Max | unit} OFF CHARACTERISTICS Collector-E mitter Sustaining Voltage (1) VcCEO{sus) Vde (Ic = 20 mAdc, Ig = 0) 2N3867 40 - 2N3868 60 - 2N6303 80 - Collector-Base Breakdown Voltage V(BR)CBO Vde (ic = 100 uAdc, tg = 0) 2N3867 40 - 2N3868 60 - 2N6303 80 - Emitter-Base Breakdown Voltage ViBRIEBO Vdc {lg = 100 nAde, Ic = 0) 4.0 - Collector Cutoff Current IcEX uAdc (VceE = Rated Vcg, VBE (off) = 2.0 Vde) - 1.0 Collector Cutoff Current lcBpo wAdc (Vcp = Rated Vcg, Ie = 0, Tc = 150C) - 150 ON CHARACTERISTICS (1) DC Current Gain he ~ (Ig = 500 mAde, VcgE = 1.0 Vdc) 2N3867 50 - 2N 3868, 2N6303 35 - (Ilo = 1.5 Adc, VcE = 2.0 Vde) 2N3867 40 200 2N3868, 2N6303 30 150 (Ic = 2.5 Adc, Voge = 3.0 Vdc} 2N3867 25 - 2N3368, 2N6303 20 ~ (Ic = 3.0 Adc, Voge = 5.0 Vdc) 2N3867 20 - 2N3368, 2N6303 Coilector-Emitter Saturation Voltage VCE (sat) Vde (ic = 500 mAdc, Ig = 50 mAdc} - 0.5 (ic = 1.5 Adc, Ig = 150 mAdc}) 0.75 (Ic = 2.5 Ade, Ig = 250 mAdc} - 1.3 Base-E mitter Saturation Voltage VBE (sat) Vde (Ic = 500 mAdc, Ig = 50 mAdc) - 1.0 (ic = 1.5 Adc, Ig = 150 mAdc) 0.9 1.4 {Ic = 2.5 Ade, Ig = 250 mAdc) - 2.0 DYNAMIC CHARACTERISTICS Current-Gain ~ Bandwidth Product (2) fr MHz {Ic = 100 mAdc, VcE = 5.0 Vdc, fresy = 20 MHz) 60 - Output Capacitance Cob pF (Vcp = 10 Vde, Ie = 0, f = 0.1 MHz) _ 120 Input Capacitance Cib pF (VeEB = 3.0 Vdc, Ic = 0, f = 0.1 MHz) - 1000 SWITCHING CHARACTERISTICS Delay Time (Vcc = 30 Vac, Ve (oft) = 0. td - 35 ns Rise Time I = 1.5 Adc, 1g4 = 150 mAdc) tr = 65 ns Storage Time | (veg = 30 Vdc, t = 1.5 Ade, ts ~ 325 ns Fall Time 1g7 = Iga = 150 mAdc} t 75 ns *Indicates JEDEC Registered Data {t) Pulse Test: Pulse Width & 300 us, Duty Cycle & 2.0%. (2) fr = Inte 1 frost. 3-332N3719, 2N3720, 2N3867, 2N3868, 2N6303 FIGURE 4 THERMAL RESISTANCE 20 cit) = r(t} Osc OJc = 29C AW Max O CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT ty Ty(pk) ~ Te = Pepk} Gsc(t) 4 1 F= aL ne - DUTY CYCLE, D =ty/12 30 50 76 100 200 = 300 500 700 1000 2000 ms) FIGURE 5 ACTIVE REGION SAFE OPERATING AREA 1.0 07 05 4a ZH 03 mh Z 02 Fz ke oO a& = 01 ww 2 2007 = 0.08 22 = & 0.03 SINGLE PULSE 0.02 0.01 02 03 05 0.7 1.0 20 30 50 7.0 10 t, TIME ( 10 sf SAN 5.0 ys 4 ae 5.0 dl = S 50 us {2 ~ = 20 ~ = 5.0 ms spe 0 US+N NI 9 ~ 10 + aN ASA = \ a = = 05 =S X 3 Ty = 200C The SB 0.2 - BONDING WIRE LIMITED Boga Ta THERMALLY LIMITED @ Te = 2500 SUE (SINGLE PULSE) ~ = oosk SECOND BREAKDOWN LIMITED =F Ss 2 C CURVES APPLY BELOW 2 RATED VcEQ 2N3719, 2N3862-4 9.02-- 2N3720, 2N3868 0.01 [2N6303- 1.0 20 30 50 7.0 10 20 30 50 70 100 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 6 TURN-OFF TIME 1000 700 Ic/Ig = 10 500 ip = IB2 = 0; 300 Ty = 25C = a 200 wy Bm 2 e = w 100 E : 2 Fe 70 s 50 . os 30 20 0 0.03 0.05 0.07 0.1 02 03 O85 07 10 20 3.0 Ic, COLLECTOR CURRENT (AMP) 3-35 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I -- VceE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure S is based on Tjipk) = 200C; Te is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)S 200C. T(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. FIGURE 7 CAPACITANCE 1000 700 500 300 200 100 70 50 30 20 10 Qt 0.2 05 1000 2.0 5.0 10 20 Vr, REVERSE VOLTAGE (VOLTS) 50 1002N3719, 2N3720, 2N3867, 2N3868, 2N6303 FIGURE 8 DC CURRENT GAIN s ~ Ty = +150C wn o +25C w 3 -55C hee, OC CURRENT GAIN 2 o a VCE 20 ----- VcE=5.0V 0.05 0.07 0.1 0.5 . . 3.0 Ic, COLLECTOR CURRENT (AMP) FIGURE 10 ON VOLTAGES o @ tc/lp= 10 2 & VCE=2.0V V, VOLTAGE (VOLTS) 2 mn S > @ Ic/lp = 10 0.03 0.05 0.07 0.1 02 03 tc, COLLECTOR CURRENT (AMP) a5 07 10 20 3.0 FIGURE 12 COLLECTOR CUT-OFF REGION 5. ee VcE=30V o mR J = 150C a o ic, COLLECTOR CURRENT QA} So t Sg + an Q -0.1 -0.2 -0.3 -04 Vee, BASE-EMITTER VOLTAGE (VOLTS) FIGURE 9 COLLECTOR SATURATION REGION Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 2030 50 70 100 200 300 Ig, BASE CURRENT (mA) 500 700 1000 FIGURE 11 TEMPERATURE COEFFICIENTS D Vee = 5.0V tigg < EG ce 5.0 Ty = 55C to + 150C *Ovc for VCE ' 2 wn o Ove for VBE ' en Oy, TEMPERATURE COEFFICIENTS (mV/0C) s o 0.03 0.05 0.07 0.1 02 0.3 o5 07 1.0 20 30 Ic, COLLECTOR CURRENT (AMP) FIGURE 13 BASE CUT-OFF REGION So nh Ty = 150C S = 7 S o> 2 Jg, BASE CURRENT (uA) S n REVERSE 10-3 40.1 0 -0.1 -0.2 0.3 -0.4 Vee, BASE-EMITTER VOLTAGE (VOLTS) 3-36