©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCW60A/B/C/D
NPN Epitaxia l Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 32 V
VCEO Collector-Emitter V oltage 32 V
VEBO Emitter-Base V oltage 5 V
ICCollector Current 100 mA
PCCollector Power Dissipation 350 mW
TSTG Storage Temperature 150 °C
BCW60A/B/C/D
General Purpose Transistor
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCW60A/B/C/D
Electrical Characteristics Ta=25°C unless otherwise noted
Marking Code
Symbol Param e ter Test Conditio n Min. Max. Units
BVCEO Collect or-E mitter Break down Voltage IC=2mA, IB=0 32 V
BVEBO Emitter-Base Breakdown Voltage IE=1µA, IC=0 5 V
ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA
hFE DC Current Gain
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
VCE=5V, IC=10µA
VCE=5V, IC=2mA
VCE=1V, IC=50mA
20
40
100
120
180
250
380
60
70
90
100
220
310
460
630
VCE(sat) Collector-Emitter Saturat ion Voltage IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA 0.55
0.35 V
V
VBE(sat) Base-Emitter Saturat ion Voltage IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA 0.7
0.6 1.05
0.85 V
V
VBE(on) Base-Emitter O n Voltage VCE=5V, IC=2mA 0.55 0.75 V
Cob Output Capacitance VCB=10V, IE=0, f=1M H z 4.5 pF
fTCurrent Gain Bandwidth Product IC=10mA, VCE=5V, f=100MHz 125 MHz
NF Noise Figure IC=0.2mA, VCE=5V
RG=2KΩ, f=1KHz 6dB
tON Turn On Time IC=10mA, IB1=1mA 150 ns
tOFF Turn Off Time VBB=3.6V, IB2=1mA
R1=R2=5KΩ,RL=990Ω800 ns
Type BCW60A BCW60B BCW60C BCW60D
Mark. AA AB AC AD
AA
Marking
Package Dimensions
BCW60A/B/C/D
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
SOT-23
©2002 Fairchild Semiconductor Corporation Rev. I1
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