54
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Darlington 2SB1647
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
–10mA
–50mA
–3mA
0
–3
–2
–1
–0.2
–1–0.5 –10–5 –200–100–50
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=–10A
I
C
=–15A
IC=–5A
0
–15
–10
–5
0–3–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.2 –0.5 –1 –5 –10 –15
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
1,000
10,000
50,000
5,000
Typ
(VCE=–4V)
–0.2 –1–0.5 –5 –10 –15
1000
5000
10000
50000
Collector Current IC(A)
DC Current Gain hFE
25˚C
–30˚C
125˚C
Time t(ms)
0.1
1
3
0.5
1 10 100 1000 2000
Transient Thermal Resistance θj-a(˚C/W)
0.02 0.10.05 0.5 1 5 10
0
40
20
60
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Safe Operating Area (Single Pulse)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
0
0
–5
–10
–15
–2 –6–4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–1.5mA
–1.0mA
–0.8mA
I
B
=–0.3mA
–0.5mA
–2mA
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1647
–150
–150
–5
–15
–1
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1647
–100max
–100max
–150min
5000min∗
–2.5max
–3.0max
45typ
320typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=–150V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–10A
IC=–10A, IB=–10mA
IC=–10A, IB=–10mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
–40
RL
(Ω)
4
IC
(A)
10
VBB2
(V)
5
IB2
(mA)
10
ton
(
µ
s)
0.7typ
tstg
(
µ
s)
1.6typ
tf
(
µ
s)
1.1typ
IB1
(mA)
–10
VBB1
(V)
–10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
E
C
(70Ω)
Equivalent circuit
