1
SD553C..S50L SERIES
FAST RECOVERY DIODES Hockey Puk Version
560A
Bulletin I2092 rev. C 04/00
www.irf.com
Features
High power FAST recovery diode series
6.0 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AB (B-PUK)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
IF(AV) 560 A
@ Ths 55 °C
IF(RMS) 1120 A
@ Ths 25 °C
IFSM @ 50Hz 12000 A
@ 60Hz 12570 A
I2t@
50Hz 721 KA2s
@ 60Hz 658 KA2s
VRRM range 3000 to 4500 V
trr 6.0 µs
@ TJ125 °C
TJ- 40 to 125 °C
Parameters SD553C..S50L Units
case style DO-200AB (B-PUK)
SD553C..S50L Series
2
Bulletin I2092 rev. C 04/00
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Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = 125°C
VVmA
30 3000 3100
36 3600 3700
40 4000 4100
45 4500 4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD553C..S50L 75
Test conditions Max. values @ TJ
= 125 °C
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Recovery Characteristics
S50 5.0 1000 100 - 50 6.0 900 250
Typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
TJ
= 25 oC
IF(AV) Max. average forward current 560 (210) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C Double side (single side) cooled
IF(RMS) Max. RMS forward current 1120 A @ 25°C heatsink temperature double side cooled
IFSM Max. peak, one-cycle forward, 12000 t = 10ms No voltage
non-repetitive surge current 12570 t = 8.3ms reapplied
10100 t = 10ms 50% VRRM
10570 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 721 t = 10ms No voltage Initial TJ = TJ max.
658 t = 8.3ms reapplied
510 t = 10ms 50% VRRM
466 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 7210 KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1Low level value of forward
slope resistance
rf2High level value of forward
slope resistance
VFM Max. forward voltage drop 3.24 V Ipk= 1500A, TJ = 125°C, tp = 10ms sinusoidal wave
Parameter SD553C..S50L Units Conditions
Forward Conduction
KA2s
A
V
mΩ
0.89 (I > π x IF(AV)),TJ = TJ max.
0.98 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
1.95 (I > π x IF(AV)),TJ = TJ max.
1.77 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
SD553C..S50L Series
3
Bulletin I2092 rev. C 04/00
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TJMax. junction operating temperature range -40 to 12 5
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled
junction to heatsink 0.031 DC operation double side cooled
F Mounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g
Case style DO-200AB (B-PUK) Conforms to JEDEC
Parameter SD553C..S50L Units Conditions
Thermal and Mechanical Specifications
°C
K/W
180°0.009 0.009 0.006 0.006 TJ = TJ max.
120°0.011 0.011 0.011 0.011
90°0.014 0.014 0.015 0.015 K/W
60°0.020 0.020 0.021 0.021
30°0.036 0.036 0.036 0.036
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
Sinusoidal conduction Rectangular conduction
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
1- Diode
2- Essential part number
3-3 = Fast recovery
4- C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
6-t
rr code
7- L = Puk Case DO-200AB (B-PUK)
SD 55 3 C 45 S50 L
1234 5 6 7
Device Code
Ordering Information Table
SD553C..S50L Series
4
Bulletin I2092 rev. C 04/00
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Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
BOTH ENDS
0.8 (0.03)
TWO PLACES
3.5(0.14) DIA. NOM. x
1.8(0.07) DEEP MIN.
34 (1.34) DIA. MAX.
58 .5 (2.3 0) D IA. M AX .
26.9 (1.06)
25 .4 ( 1)
BOTH ENDS
53 (2.09) DIA. MAX.
Conforms to JEDEC DO-200AB (B-PUK)
All dimensions in millimeters (inches)
10
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
180° DC
120°
A ve ra g e F orw a rd C urre nt (A)
Maxim um Allowable Heatsink Temperature (°C)
Conduction Period
SD 553C ..S50L Series
(Single Side C oo led)
R (D C) = 0.0 73 K/W
thJ-hs
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400
30°60°90°120°
180°
Average Forward Current (A)
Maxim um Allowable Heatsink Temperature (°C)
Cond uction Angle
SD 553C ..S50L Se ries
(Sin gle Side C ooled)
R (DC ) = 0.073 K/W
th J- hs
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
SD553C..S50L Series
5
Bulletin I2092 rev. C 04/00
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
30°60°90°120°180°
Av era g e Fo rw a rd C urre nt ( A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 553C ..S50L Series
(D ouble Side Cooled )
R (D C ) = 0.031 K /W
thJ-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30°60°
90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD553C..S50L Series
(Double Side Cooled)
R (DC) = 0.031 K/W
thJ-h s
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
Averag e Forw ard Current (A)
Maximum Average Forward Power Loss (W)
RMS Limit
Conduction Angle
SD553C..S50L Series
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forw ard Power Loss ( W)
Conduction Period
SD553C..S50L Series
T = 125°C
J
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forw ard Current (A)
SD 553C ..S50L Se ries
In it ia l T = 1 25 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
5 0 % R a t e d V A p p l ie d Fo ll o w in g S u rg e
RRM
J
2000
4000
6000
8000
10000
12000
14000
0.01 0.1 1
P u ls e T ra i n D u r a ti o n ( s )
M ax im um N on Re petitive Surge Cu rre nt
Peak Half Sine Wave Forward Current (A)
SD 553C ..S50L Series
Initial T = 125°C
N o V o lta g e R e a p p l ie d
50% Rated V Reap plied
Versu s P ulse Tra in D uration.
RRM
J
SD553C..S50L Series
6
Bulletin I2092 rev. C 04/00
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Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics
100
1000
10000
1.522.533.544.55
T = 25°C
J
Instantaneous Forward Voltage (V)
In stan taneous Forward Current (A)
T = 125°C
J
SD553C..S50L Series
0.001
0.01
0.1
0.00 1 0.01 0.1 1 10 100
Squ are W a ve P ulse D ura tio n (s)
thJ-hs
Transien t Therma l Im ped an ce Z (K/W )
Steady State Value
R = 0.073 K/W
(Single Side C oole d)
R = 0.031 K/W
(Double Side Cooled)
(D C Op eratio n)
thJ-hs
thJ- hs
SD 553C..S50L Series
0
50
100
150
200
250
300
350
400
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
T = 125°C
T = 25°C
J
J
SD 553C..S50L Series
Rate O f R ise O f Fo rw ard C u rrent - di/dt (A /us)
I
V
FP
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
I = 1 5 00 A
Sin e Pulse
FM
1000 A
500 A
Rate Of Fall O f Forwa rd Current - di/dt (A/µs)
M axim um Reverse Recovery Current - Irr (A)
SD 553C ..S50L Series
T = 125 °C ; V > 100V
Jr
0
500
1000
1500
2000
2500
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD 553C ..S50L Series
T = 125 °C ; V > 100V
I = 15 00 A
Sine Pul se
FM
1000 A
500 A
J r
Ma x im um Re ve rse R eco ve ry C h a rg e - Q rr ( µC )
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
M a xim u m R eve rse Rec ov ery Tim e - Trr (µ s)
500 A
I = 15 00 A
Sin e Pu ls e
1000 A
SD 553C ..S50L Serie s
T = 125 °C; V > 100V
J
FM
r
SD553C..S50L Series
7
Bulletin I2092 rev. C 04/00
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Fig. 18 - Frequency CharacteristicsFig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 20 - Frequency CharacteristicsFig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse Basewidth (µs)
Peak Forward Current (A)
10 joules per pulse
6
4
Si nu so id al Pu lse
SD553C..S50L Series
0.8
0.6
0.4
0.2
T = 1 25°C, V = 1500V
J
RRM
dv/dt = 1000V/µs
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Peak Forward Current (A)
Si nu so id al Pu ls e
SD553C..S50L Series
3000
1500
T = 55°C, V = 1500V
C
RR M
tp
600
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse Basewidth (µs)
Peak Forw ard Current (A)
10 jo ules p e r p ulse
6
4
dv/dt = 1000V/µs
T = 1 25 °C , V = 1500V
J
RRM
Sin uso id al Pu ls e
0.8
0.6
0.4
8
SD553C..S50L Series
tp
1E2
1E3
1E4
1E1 1E 2 1E3 1E4
Pulse Basew idth (µs)
Trapezoidal Pulse
50 H z
100
200
400
1000
1500
2000
4000
3000
600
T = 5 5°C, V = 1500V
RRM
6000
Peak Forward Current (A)
SD 55 3C ..S5 0 L S er ie s
dv/dt = 10 00V/us,
di/dt = 300A/us
C
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basew idth (µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
T = 1 25 °C, V = 1500V
J
RRM
dv/d t = 1000V/µs
di/dt = 100A/µs
0.8
0.6
SD553C..S50L Series
tp
8
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
Tra pe zo ida l Pu lse
50 H z
100
200
400
1000
1500
2000
4000
3000
600
T = 55°C, V = 15 00V
RRM
6000
Peak Forward Current (A)
SD553C..S50L Series
dv/dt = 1000V/us,
di/dt = 100A/us
C
tp
