eSC D MM@ 6235605 0004501 b&b MMSIEG PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 77S 77. 2906 A 2 2N 2N2907A 2 N 2906 A and 2 N 2907 A are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. Type Ordering code 2N2906A Q62702-F408 2N2907A Q62702-S170 Maximum ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature range Total power dissipation (Tamb = 25 C) Total power dissipation (Tease = 25 C) Thermal resistance Junction to ambient air Junction to case Approx. weight 0.3 g mom ao c 45 a NQ 55-5 ~ 26403 Dimensions in mm 2N 2906A 2N 2907 A ~Veeo 60 Vv Vero 60 Vv Vego 5 Vv -Ic 0.6 A Tj 200 C Tetg -65 to +200 C Prot 0.4. WwW Prot 1.8 Ww Rina <438 K/AW Rtr, JC <97 K/W 947 25C ) MM 823505 0004902 8 MESIEG : a . 7-77 FD OFLA SCHAF - T= i SIEMENS AKTIENGESELL 2N2906A 2N2907A Static characteristics (Tamp = 25 C) 2N2906A | 2N2907A Collector-base breakdown voltage (-Ie = 10uA) ViprjcBo > 60 >60 Vv Collactor-emitter breakdown voltage (-Ic = 10 mA) ViBr)cEo > 60 >60 Vv Emitter-base breakdown voitage (~Jg = 10 pA) Vierjeno | >5 >5 V Collector-emitter saturation voltage (-Jg = 15 mA; I = 150 mA) VcEsat <0.4 <0.4 V (-Jg = 50 mA; Ig = 500 mA) ~Vocesat <1.6 <1.6 Vv Base-emitter saturation voltage (-I = 150 mA; Ig = 15 mA) Veesat <1.3 <1.3 Vv (-Ie = 500 mA; Jg = 50 mA) VoEsat <2.6 <2.6 Vv Collector cutoff current (-Vcg = 50 V) -Icgo <10 <10 nA (-Veg = 50 V; Tamp = 150 C) Icopo <10 <10 pA DC current gain (~Vee = 10 V; ~JIc = 100 LA) dee >40 >75 - (Vee = 10 V; Ip = 1 mA) hee >40 > 100 - (-Voe = 10 V; Jo = 10 mA) Age >40 > 100 - (Vee = 10 V; -Ig = 150 mA) Age 40 to 120 100 to 300 | - (-Vee = 10 V; Ig = 500 mA) hee >40 >50 ~ Dynamic characteristics (Tamp = 25 C) Collector-base capacitance (-Veg = 10 V; f = 100 kHz) Ccso <8 <8 pF Transition frequency (-Vce = 20 V; -Ip = 50 mA; f = 100 MHz) fy > 200 > 200 MHz Switching times: (-Vec =30V; -Io = 150 mA; fg, approx. Jg2 approx. 15 mA Delay time ty <10 <10 ns Rise time t _ | <40 <40 ns Storage time ts <80 <80 ns Fall time t <30 <30 ns 948 05 > i 2264 eSC D M@& 4235605 0004503 T MESIEG SIENENS AKTIENGESELLSCHAF OTT* 57-17. Total perm. power dissipation versus temperature Ww Prot = 6D) 0 100 200 C DC current gain fgg = f (7c) Vee =1V, Vee = 10 V; Tamb = 25C 10 Are 10 K Permissible pulse load tine = f(t) W v= parameter 1 10 10 1? 107 10 10%s Saturation voltages Vagsat = el I) Wetset =F (Ie) fice = 10; Tomy = 25C 0 10 0 02 04 06 08 10 12 16 16V oe scr? Yee sat a 949 25 D MM 8235605 OOO4I04 1 MMSIEG | 25C 04904 O04 -BZIF 2 N 2906 2 N 2907 SIEMENS AKTIENGESELLSCHAF 2N 2906A 2N 2907 A Tum-on time ton = f Ue) Storage time t, = f (ie) bee = 10; Tamb = 25C; Veg = 30 V Fall time tj = f (ic): Tem = 25C ns ae = parameter fs 0 0 bate { 10 10 10. 10! 10 ry 10 107 mA -] c as Vor = 30 Vi fre parameter wigven dou eee 0 0 h i 10 10 0 10! 25C D MM 8235605 0004905 3 MMSIEG | a ~25C 04905 __ 7-39-(7 ~ SIEMENS AKTIENGESELLSCHAF Collector-base capacitance Df Coa =f (Vea); Tame = 26C 10 Cea 1c 10! 10? Vv Veg 2267 A~0O8 951