Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF 0.95 V
• Reverse surge capability
• High thermal cycling performance IO(AV) = 16 A
• Low thermal resistance IRRM = 0.2 A
trr 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ30E series is supplied in the SOT78 conventional leaded package.
The BYQ30EB series is supplied in the SOT404 surface mounting package.
The BYQ30ED series is supplied in the SOT428 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT428
PIN DESCRIPTION
1 anode 1
2 cathode 1
3 anode 2
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ30E/ BYQ30EB/ BYQ30ED -150 -200
VRRM Peak repetitive reverse - 150 200 V
voltage
VRWM Working peak reverse - 150 200 V
voltage
VRContinuous reverse voltage - 150 200 V
IO(AV) Average rectified output square wave; δ = 0.5; Tmb 104 ˚C - 16 A
current (both diodes
conducting)
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb 104 ˚C - 16 A
current per diode
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current per diode t = 8.3 ms - 88 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current per diode
IRSM Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current per diode
TjOperating junction - 150 ˚C
temperature
Tstg Storage temperature - 40 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a1 a2
13
2
1
2
3
tab
13
tab
2
123
tab
October 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction per diode - - 3 K/W
to mounting base both diodes - - 2.5 K/W
Rth j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 8 A; Tj = 150˚C - 0.84 0.95 V
IF = 16 A; Tj = 150˚C - 1 1.15 V
IF = 16 A - 1.12 1.25 V
IRReverse current VR = VRWM -430µA
VR = VRWM; Tj = 100˚C - 0.3 0.6 mA
Qrr Reverse recovered charge IF = 2 A; VR 30 V; -dIF/dt = 20 A/µs-411nC
trr1 Reverse recovery time IF = 1 A; VR 30 V; -dIF/dt = 100 A/µs2025ns
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 12 22 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Circuit schematic for t
rr2
Fig.5. Definition of t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs100%
10%
time
dI
dtF
IR
IF
Irrm
trr
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
time
time
VF
Vfr
VF
IF
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
024681012
0
2
4
6
8
10
12
0.5
0.2
0.1
BYQ30
Rs = 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) / C
150
144
138
132
126
120
114
D = 1.0
D =
tptp
T
T
t
I
012345678
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYQ30
Rs 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) / C
150
144
138
132
126
120
114
October 1998 3 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.01.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
110 100
-dIF/dt (A/us)
IF=1A
IF=10A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYQ30E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0 0.5 1 1.5 2
0
5
10
15
20 BYQ30
Forward voltage, VF (V)
Forward current, IF (A)
typ max
Tj = 25 C
Tj = 150 C
October 1998 4 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1998 5 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : soldering pattern for surface mounting
.
Notes
1. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
October 1998 6 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.15. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.16. SOT428 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
October 1998 7 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998 8 Rev 1.200