Preliminary Data Sheet
October 2004
AGR09060G
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09 060 G is a high-v ol tage, gold-m etaliz ed ,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications. This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver-
ing a minimum output power of 60 W, it is ideally
suited for today's RF power amplifier applications.
Figure 1. Available Packages
Features
■Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traf fic codes 8—13:
— Output powe r (POUT): 14 W.
— Power gain: 18.5 dB.
— Efficiency: 27%.
— Adjacent ch annel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc)
(1.98 MHz offset: –60 dBc).
— Input return loss: 10 dB.
■High-reliability gold-metalization process.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Si LDMOS.
■Industry-standard packages.
■60 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22- A114B (HBM), JES D22-A 115A (MM), and
JESD22-C101A (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09060GU (unflanged) AGR09060GF (flanged)
Parameter Sym Value Unit
Thermal Resistance,
Junction to Case:
AGR09060GU
AGR09060GF RθJC
RθJC 1.0
1.3 °C/W
°C/W
Parameter Sym Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, +15 Vdc
Drain Current—Continuous ID6.0 Adc
Total Dissipation at TC = 25 °C:
AGR09060GU
AGR09060GF PD
PD175
135 W
W
Derate Above 25 °C:
AGR09060GU
AGR09060GF —
—1.0
0.77 W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S torage Temperature Range TSTG –65, +150 °C
AGR09060G Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
2Agere Systems Inc.
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET October 2004
AGR09060G Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID=100µA) V(BR)DSS 65 — — Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS ——1.3µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——4µAdc
On Characteristics
Forward Transconductance ( VDS =10V, ID=1.0A) GFS —3— S
Gate Threshold Voltage (VDS =10V, ID = 400 µA) VGS(TH) ——4.8Vdc
Gate Quiescent Voltage (VDS =28V, IDQ = 550 mA) VGS(Q) —3.5—Vdc
Drain-source On-voltage (VGS =10V, ID = 1.0 A) VDS(ON) —0.17— Vdc
Parameter Symbol Min Typ Max Unit
Dynamic Characteris tics
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) CISS — 126 — pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS —36— pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) CRSS —1.9— pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 6 W, IDQ = 550 mA) GL17 18.5 — dB
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 550 mA) η—57— %
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 60 WPEP, IDQ = 550 mA) IMD — –32 — dBc
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 550 mA) P1dB 60 75 — W
Input VSWR VSWRI—2:1— —
Ruggedness
(VDS = 28 V, POUT = 60 W, IDQ = 550 mA, f = 880 MHz,
VSWR = 10:1, all angles)
— No degradation in output power.
Agere Systems Inc. 3
Preliminary Data Sheet AGR09060G
October 2004 60 W, 865 MHz—895 M H z, N-Chann el E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09060G
A. Schematic
Parts List:
■Microstrip line: Z1 0.675 in. x 0.066 in.; Z2 0.035 in. x 0.066 in.; Z3 0.297 in. x 0.050 in.; Z4 0.075 in. x 0.066 in.; Z5 0.818 in. x 0.066 in.;
Z6 0.482 in. x 0.150 in.; Z7 0.050 in. x 0.150 in.; Z8 0.300 in. x 0.150 in.; Z9 0.050 in. x 0.440 in.; Z10 0.050 in. x 0.440 in.;
Z11 0.078 in. x 0.440 in.; Z12 0.050 in. x 0.440 in.; Z13 1.024 in. x 0.050 in.; Z14 0.166 in. x 0.300 in.; Z15 0.050 in. x 0.300 in.;
Z16 0.114 in. x 0.300 in.; Z17 0.050 in. x 0.300 in.; Z18 0.650 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.583 in. x 0.066 in.;
Z21 0.881 in. x 0.066 in.; Z22 2.048 in. x 0.050 in.
■Murata® 0805 chip capacitor: C12, C23: 0.01 µF, GRM40X7R103K100AL.
■0603 chip capacitor: C10, C21: 220 pF.
■Sprague® tantalum chip capacitor: C14, C25, C26: 22 µF, 35 V.
■Kreger® ferrite bead: FB1: 2743D19447.
■Kemet® 1206 chip capacitor: C13, C24: 0.10 µF, C1206C104KRAC7800.
■Vitramon® chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA.
■Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
■ATC® chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C2: 3.9 pF, 100B3R9BW; C3, C6, C9, C20: 10 pF, 100B100JW;
C4, C5, C15, C16: 12 pF, 100B120JW; C7: 5.6 pF, 100B5R6BW; C17: 4.7 pF, 100B4R7B W; C27: 8.2 pF, 100A8R2BW.
■1206 size fixed film chip resistor, 0.25 W: R1: 50 Ω, RM73B2B500J; R2: 4 7 kΩ, RM73B2B473J; R3: 1 kΩ, RM73B2B103J.
B. Component Layout
Figure 2. AGR09060G Test Circuit
DUT
C26
C1
Z1
C18
Z14 Z16 Z19 Z21
RF
VGG
VDD
RF OUTPU
FB1
C13
C6C3
3
1
2
PINS: 1. DRAIN; 2. GATE; 3. SOURCE
C12 C11 C10 C9 C8
Z13
Z8 Z9
Z7 Z11
Z10 Z12
C2
C19 C20 C21 C22 C23 C24 C25
C4 C5
R1
R2
Z22
C15 C16
Z17 Z18 Z20
+
C17
Z15
C7
R3
C14
INPUT
Z6
Z5Z4
Z2
Z3
C27
++
4Agere Systems Inc.
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET October 2004
AGR09060G Preliminary Data Sheet
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZS Ω
(Complex Source Impedance)
ZL Ω
(Complex Optimum Load Impedance)
865 (f1) 0.393 – j1.07 1.97 + j0.004
880 (f2) 0.431 – j1.02 1.98 + j0.120
895 (f3) 0.471 – j0.985 1.99 + j0.223
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0
.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
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RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3
f1
ZL
f1
f3
Z0 = 4 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
Agere Systems Inc. 5
Preliminary Data Sheet AGR09060G
October 2004 60 W, 865 MHz—895 M H z, N-Chann el E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Figure 4. ACPR vs. POUT
Figure 5. Power Gain and Input Return Loss vs. Frequency
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 2
0
POUT (W)Z
ACPR (dBc)Z
VDD = 28 VDC, IDQ = 550 mA,
FREQUENCY = 880 MHz, Tc = 30 °C,
IS-95 CDMA PILOT, PAGING, SYNC,
TRAFFIC CODES 8 THROUGH 13.
OFFSET 1 = 750 kHz, 30 kHz BANDWIDTH.
OFFSET 2 = 1.98 MHz, 30 kHz BANDWIDTH.
ACP+
ACP-
ACP1+
ACP1-
8
9
10
11
12
13
14
15
16
17
18
19
20
860 865 870 875 880 885 890 895 900
FREQUENCY (MHz)Z
POWER GAIN (dB)Z
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT RE T URN LOSS (dB)Z
VDD = 28 VDC,
IDQ = 550 mA,
Tc = 30 °C,
WAVEFORM = CW
POWER GAIN
RETURN LOSS
POUT = 79 W
POUT = 14 W
6Agere Systems Inc.
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET October 2004
AGR09060G Preliminary Data Sheet
Typical Performance Characteristics (continued)
Figure 6. Power Gain vs. Power Out
Figure 7. Power Out and Drain Efficiency vs. Input Power
0
2
4
6
8
10
12
14
16
18
20
22
0 2040608010
0
POUT (W)Z
POWER GAIN (dB)Z
865 MHz
880 MHz
895 MHz
VDD = 28 VDC,
IDQ = 550 mA,
Tc = 30 °C,
WAVEFORM = CW
Power Out and Efficiency vs Pin
0
10
20
30
40
50
60
70
80
90
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
PIN (W)Z
POUT (W)Z
10
20
30
40
50
60
70
80
90
100
110
DRAIN EFFI CIENCY (%)Z
POUT
EFFICIENCY
865 MHz
880 MHz
895 MHz
895 MHz
880 MHz
865 MHz
VDD = 28 VDC,
IDQ = 550 mA,
Tc = 30 °C,
WAVEFORM = CW
Agere Systems Inc. 7
Preliminary Data Sheet AGR09060G
October 2004 60 W, 865 MHz—895 M H z, N-Chann el E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR09060GU
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
AGR09060GF
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
Label Notes:
■M before the part number denotes model program. X before the part number denotes engineering prototype.
■The last two letters of the part number denote wafer technology and package type.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■ZZZZZZZ = seven-digit assembly lot number on production parts.
■ZZZZZZZZZ ZZZ = 12-digi t (fiv e-di git lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
1
2
3
2
13
AGERE
AGR09060GU
YYWWLL XXXXX
ZZZZZZZ
11
22
33
AGERE
AGR09060GF
YYWWLL XXXXX
ZZZZZZZ
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET October 2004
AGR09060G Preliminary Data Sheet
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Sprague is a registered trademark of Sprague Elec tric Company Corporation.
Murata is a registered trademark of Murata Electronics North America, Inc.
Kreger is a registered trademark of Kreger Components, Inc.
Vitramon is a registered trademark of Vitramon Incorporated.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
Copyright © 2004 Agere Systems Inc.
All Rights Reserved
October 2004
DS02-022RFPP
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-71 2-4106)
ASIA: CHINA: (86) 21-5 46 14688 (Shanghai), (86 ) 755 - 25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (To kyo ), KORE A: ( 82) 2-767-18 50 (Seoul), SINGAPORE: (65) 6741-9855, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44 ) 134 4 296 400
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.