MMBD101
Surface Mount Schottky
Barrier Diode
Low Turn-on Voltage
ForUHFmixerapplication
Also suitablefor use in detector and ultra-fast
switching circuitsLow NoiseFigure- 6.0dBTyp@1.0GHz
Very Low Capacitance-LessThan1.0pF@0V
(HighForwardConductance-0.5V Typ) @ IF= 10mA
Dim Min Max
A2.800 3.040
B1.200 1.400
C0.890 1.110
D0.370 0.500
G1.780 2.040
H0.013 0.100
J0.085 0.177
K0.450 0.600
L0.890 1.020
S2.100 2.500
V0.450 0.600
All Dimension in mm
SOT-23
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
KJ
C
H
L
A
BS
GV
3
12
D
To p View
1
2
3
3
CATHODE
1
ANODE
MAXIMUM RATINGS
MMBD101
Rating Symbol Value Unit
Reverse Voltage VR7.0 Volts
Forward Power Dissipation
o
@ TA = 25 Co
Derate above 25 CPF
225
1.8
mW
o
mW/ C
Junction Temperature TJ+150
Storage Temperature Range Tstg -55 to +150
DEVICE MARKING
MMBD101 = 4M
ELECTRICAL CHARACTERISTICS o
(T = 25 Cunless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 Adc) V(BR)R 7.0 10 Volts
Diode Capacitance
(VR = 0, f = 1.0 MHz ) CT0.88 1.0 pF
Forward Voltage
(I = 10 mAdc)
F
VF0.5 0.6 Volts
Reverse Leakage
(V = 3.0 Vdc)
R
IR0.02 0.25
oC
oC
Features
Mechanical Data
Adc
RATINGS AND CHARACTERISTIC CURVES MMBD101
Figure 1. Reverse Leakage
TA, Amb ien t T em per at ure (
Figure 2. Forward Voltage
VF, F orwar d V oltage (V )
Figure 3. Capacitance
VR, R e verse V oltage (V )
Figure 4. Noise Figure
P , Local Oscillator Power (mW)
LO
Forwa rd C urren t (mA)
R verse Lea kage ( A)
0.1 0.2 0.5 2.01.0 10
11
3.0
0 1.0 2.0 3.0 4.0
1.0
0.9
0.8
0.7
0.6
0.3 0.4
100
0.1
30 40 50 60 70 80 100
0.1
13011 0 12090
0.07
0.05
0.02
1.0
2.0
0.5 0.6 0.7
0.01
1.0
0.7
0.5
10
1.0
0.2
VR = 3.0 Vdc
C, C apacitance (pF)
5.0
4.0
7.0
6.0
9.0
8.0
10
Local Oscillator Frequency = 1.0 GHz
5.0
TA = 25
TA = 0
TA = 85
N F, N oise F igure (dB)
R,
I
I F,
OC)
oC
oC
oC
