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November 2012

FR014H5JZ • Rev. C2

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

FR014H5JZ (14m, -30V)

High-Side Reverse Bias / Reverse Polarity Protector

With Integrated Over Voltage Transient Suppression

Features

 Up to -30V Reverse-Bias Protection

 Nano Seconds of Reverse-Bias Blocking

Response Time

 +32V 24-Hour “Withstand” Rating

 14m Typical Series Resistance at 5V

 Integrated TVS Over Voltage Suppression

 MLP 3.3x3.3 Package Size

 RoHs Compliant

 USB Tested and Compatible

Applications

 USB 1.0, 2.0 and 3.0 Devices

 USB Charging

 Mobile Devices

 Mobile Medical

 POS Systems

 Toys

 Any DC Barrel Jack Powered Device

 Any DC Devices subject to Negative Hot Plug or

Inductive Transients

 Automotive Peripherals

Description

Reverse bias is an increasingly common fault event that

may be generated by user error, improperly installed

batteries, automotive environments, erroneous

connections to third-party chargers, negative “hot plug”

transients, inductive transients, and readily available

negatively biased rouge USB chargers.

Fairchild circuit protection is proud to offer a new type of

reverse bias protection devices. The FR devices are low

resistance, series switches that, in the event of a

reverse bias condition, shut off power and block the

negative voltage to help protect downstream circuits.

The FR devices are optimized for the application to offer

best in class reverse bias protection and voltage

capabilities while minimizing size, series voltage drop,

and normal operating power consumption.

In the event of a reverse bias application, FR014H5JZ

devices effectively provide a full voltage block and can

easily protect -0.3V rated silicon.

From a power perspective, in normal bias, a 14m FR

device in a 1.5A application will generate only 21mV of

voltage drop or 32mW of power loss. In reverse bias,

FR devices dissipate less then 20µW in a 16V reverse

bias event. This type of performance is not possible with

a diode solution.

Benefits extend beyond the device. Due to low power

dissipation, not only is the device small, but heat sinking

requirements and cost can be minimized as well.

Ordering Information

Part Number Top Mark Package Packing Method

FR014H5JZ 14H 8-Lead, Molded Leadless Package (MLP),

Dual, 3.3mm Square

3000 on Tape & Reel;

13-inch Reel, 12mm Tape

FR014H5JZ • Rev. C2 2

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Diagrams

CTL

NEGPOS

Startup Diode

Inrush Reducer

OV Bypass

Protection

Power

Switch

USB Device

Circuit

Power Source

(USB Connector)

FR014H5JZ

NEGPOS

CTL

Protected USB Device Circuit

IIN

Figure 1. Block Diagram Figure 2. Typical Schematic

Pin Configuration

Figure 3. Pin Assignments

Pin Definitions

Name Pin Description

POS 5, 6, 7, 8 The positive terminal of the power source. Current flows into this pin during normal

operation.

CTL 4

The control pin of the device. A negative voltage to the POS pin turns the switch on and a

positive voltage turns the switch to a high-impedance state.

NEG 1, 2, 3 The positive terminal of the load circuit to be protected. Current flows out of this pin during

normal operation.

FR014H5JZ • Rev. C2 3

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Absolute Maximum Ratings

Values are at TA=25°C unless otherwise noted.

Symbol Parameter Value Unit

V+ MAX_OP Steady-State Normal Operating Voltage between POS and CTL Pins

(VIN = V+ MAX_OP, IIN = 1.5A, Switch On) +25

V+ 24 24-Hour Normal Operating Voltage Withstand Capability between POS

and CTL Pins (VIN = V+ 24, IIN = 1.5A, Switch On) (1) +32

V- MAX_OP Steady-State Reverse Bias Standoff Voltage between POS and CTL Pins

(VIN = V- MAX_OP) -30

IIN Input Current VIN = 5V, Continuous(2) (see Figur e 4) 8 A

TJ Operating Junction Temperature 150 °C

PD Power Dissipation TC = 25°C 36 W

TA = 25°C(2) (see Figure 4) 2.3

IDIODE_CONT Steady-State Diode Continuous Forward Current from POS to NEG(2)

(see Figure 4) 2

IDIODE_PULSE Pulsed Diode Forward Current from POS to NEG (300µs Pulse) (2) (see

Figure 5) 450

ESD

Electrostatic

Discharge

Capability

Human Body Model, JESD22-A114 8

Charged Device Model, JESD22-C101 2

System Model,

IEC61000-4-2

NEG is shorted to CTL

and connected to GND

Contact 8

Air 15

No external connection

between NEG and CTL

Contact 3

Air 4

Notes:

1. The V+24 rating is NOT a survival guarantee. It is a statistically calculated survivability reference point taken on

qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is

intended to indicate the device’s ability to withstand transient events that exceed the recommended operating

voltage rating. Specification is based on qualification devices tested using accelerated destructive testing at

higher voltages, as well as production pulse testing at the V+24 level. Production device field life results may vary.

Results are also subject to variation based on implementation, environmental considerations, and circuit

dynamics. Systems should never be designed with the intent to normally operate at V+24 levels. Contact Fairchild

Semiconductor for additional information.

2. The device power dissipation and thermal resistance (R) are characterized with device mounted on the following

FR4 printed circuit boards, as shown in Figure 4 and Figure 5

Figure 4. 1 Square Inch of 2-ounce copper Figure 5. Minimum Pads of 2-ounce Copper

Thermal Characteristics

Symbol Parameter Value Unit

RJC Thermal Resistance, Junction to Case 3.4 °C/W

RJA Thermal Resistance, Junction to Ambient(2) (see Figure 4) 50

FR014H5JZ • Rev. C2 4

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

Positive Bias Characteristics

RON Device Resistance, Switch On

VIN = +4V, IIN = 1.5A 18 23

m

VIN = +5V, IIN = 1.5A 14 19

VIN = +5V, IIN = 1.5A,

TJ = 125°C 20

VIN = +12V, IIN = 1.5A 11 14

VON

Input Voltage, VIN, at which Voltage

at POS, VPOS, Reaches a Certain

Level at Given Current IIN = 100mA, VPOS - VNEG =

50mV, VCTL = 0V

2.0 2.4 3.0 V

VON / TJ Temperature Coefficient of VON -3.52 mV/°C

VF Diode Forward Voltage VCTL = VNEG, IDIODE = 0.1A,

Pulse width < 300µs 0.57 0.63 0.70 V

IBIAS Bias Current Flowing into POS Pin

during Normal Bias Operation

VPOS = 5V, VCTL = 0V,

No Load 30 nA

Negative Bias Characteristics

V- MAX_OP Reverse Bias Breakdown Voltage

IIN = -250µA, VCTL = VNEG =0V

-30 V

V- MAX_OP /

TJ

Reverse Bias Breakdown Voltage

Temperature Coefficient 22.5 mV/°C

I- Leakage Current from NEG to POS

in Reverse-Bias Condition

VPOS = -20V,

VCTL = VNEG = 0V 1 µA

tRN Time to Respond to Negative Bias

Condition

VCTL = 5V, VPOS = 0V, CLOAD =

10µF, Reverse Bias Startup

Inrush Current = 0.2A

50 ns

Integrated TVS Performance

VZ Breakdown Voltage @ IT I

T = 1mA, 300µs Pulse 28.5 30 31.2 V

IR Leakage Current from NEG to CTL VNEG = +25V, VCTL = 0V 1.5 10 µA

VNEG = -25V, VCTL = 0V -1.5 -10

IPPM

Max Pulse

Current from

NEG to CTL IEC61000-4-5

8x20µs pulse

VNEG > VCTL 0.8

VNEG < VCTL -0.9

Clamping

Voltage form

NEG to CTL at

IPPM

VNEG > VCTL 34

VNEG < VCTL -34

Dynamic Characteristics

CI Input Capacitance between POS

and CTL

VIN = -5V, VCTL = VNEG = 0V, f

= 1MHz

2440

pF CS Switch Capacitance between POS

and NEG 564

CO Output Capacitance between NEG

and CTL 2526

RC Control Internal Resistance 3.6 

FR014H5JZ • Rev. C2 5

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Typical Characteristics

TJ = 25°C unless otherwise specified.

02468101214161820

16V

12V

RON, SWITCH ON-RESISTANCE (mΩ)

IIN, INPUT CURRENT (A)

Input Voltage, VIN = 4V

0.00.30.60.91.21.51.82.1

2.2

2.4

2.6

2.8

3.0

3.2

3.4

3.6

VON, MINIMUM INPUT VOLTAGE TURNING

ON THE SWITCH (V)

IIN, INPUT CURRENT (A)

Figure 6. Switch On Resistance vs. Switch Current Figure 7. Minimum Input Voltage to Turn On Switch

vs. Current at 50mV Switch Voltage Drop

13579111315171921

0.0

0.2

0.4

0.6

0.8

1.0

1.5A

0.9A

TJ = 25oC

RSW, EFFECTIVE SWITCH RESISTANCE (Ω)

VIN, INPUT VOLTAGE (V)

IIN = 0.1A

-75 -50 -25 0 25 50 75 100 125 150

IIN = 0.1A

12V

RON, SWITCH ON-RESISTANCE (mΩ)

TJ, JUNCTION TEMPERATURE (oC)

VIN = 5V

Figure 8. Effective Switch Resistance RSW vs.

Input Voltage VIN

Figure 9. Switch On Resistance vs. Junction

Temperature at 0.1A

-75 -50 -25 0 25 50 75 100 125 150

IIN = 1.5A

12V

RON, SWITCH ON-RESISTANCE (mΩ)

TJ, JUNCTION TEMPERATURE (oC)

VIN = 5V

1E-4 1E-3 0.01 0.1 1 10 100 1000

0.1

100

1000

PEAK PACKAGE POWER (W)

t, PULSE WIDTH (s)

Figure 10. Switch On Resistance vs. Junction

Temperature at 1.5A

Figure 11. Single-Pulse Maximum Power vs. Time

FR014H5JZ • Rev. C2 6

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Typical Characteristics

TJ = 25°C unless otherwise specified.

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

1E-3

0.01

0.1

100

-55oC

25oC

TJ = 125oC

IF, STARTUP DIODE FORWARD CURRENT (A)

VF, STARTUP DIODE FORWARD VOLTAGE (V)

VNEG = VCTL = 0V

Figure 12. Startup Diode Current vs. Forward Voltage

FR014H5JZ • Rev. C2 7

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Application Test Configurations

USB Device

Circuit

Power Source

(USB Connector)

FR014H5JZ

NEGPOS

CTL

VIN

Protected USB Device Circuit

Figure 13. Typical Application Circuit for USB Applications

Pulse

Generator

DC Power

Supply

Q1-1

FDS8858CZ

Q1-2

FDS8858CZ

FR014H5JZ

NEG

POS

CTL

4 G2

1 S1

3 S2

5,6

2 G1

7,8 D1

Figure 14. Startup Test Circuit – Normal Bias with FR014H5JZ

FR014H5JZ • Rev. C2 8

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Application Test Configurations (Continued)

C1 C2

Q1-1

FDS8858CZ

Q1-2

FDS8858CZ

DC Power

Supply

Pulse

Generator

FR014H5JZ

NEGPOS

CTL

4 G2

1 S1

3 S2 5,6 D2

2 G1

7,8 D1

Figure 15. Startup Test Circuit – Reverse Bias with FR014H5JZ

Pulse

Generator

DC Power

Supply

Q1-1

FDS8858CZ

Q1-2

FDS8858CZ

4 G2

1 S1

3 S2

5,6 D2

2 G1

7,8 D1

Figure 16. Startup Test Circuit – without FR014H5JZ

FR014H5JZ • Rev. C2 9

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Typical Application Waveforms

Typical USB3.0 conditions.

Figure 17. Normal Bias Startup Waveform, DC Power Source=5V, C1=100µF, C2=10µF, R1=R2=10k, R3=27

Figure 18. Reverse Bias Startup Waveform, DC Power Source=5V, C1=100µF, C2=10µF, R1=R2=10k, R3=27

 VIN, 2V/div. The input voltage between POS and CTL

 VOUT, 2V/div. The output voltage between NEG and CTL

 VD, 1V/div. The startup diode voltage between POS and NEG

 iIN, 5A/div. The input current flowing from POS to NEG

Time: 5

s/div

 VIN, 2V/div. The input voltage between POS and CTL

 VD, 2V/div. The startup diode voltage between POS and NEG

 VOUT, 1V/div. The output voltage between NEG and CTL

 iIN, 0.1A/div. The input current flowing into POS

Time: 100ns/div

FR014H5JZ • Rev. C2 10

FR014H5JZ — High Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Typical Application Waveforms (Continued)

Typical USB3.0 conditions.

Figure 19. Startup Waveform without FR014H5JZ, DC Power Source=5V, C1=100µF, C2=10uF,

R1=R2=10k, R3=27

Application Information

Figure 17 shows the voltage and current waveforms

when a virtual USB3.0 device is connected to a 5V

source. A USB application allows a maximum source

output capacitance of C1 = 120µF and a maximum

device-side input capacitance of C2 = 10µF plus a

maximum load (minimum resistance) of R3 = 27. C1 =

100µF, C2 = 10µF and R3 = 27 were used for testing.

When the DC power source is connected to the circuit

(refer to Figure 13), the built-in startup diode initially

conducts the current such that the USB device powers

up. Due to the initial diode voltage drop, the FR014H5JZ

effectively reduces the peak inrush current of a hot plug

event. Under these test conditions, the input inrush

current reaches about 6A peak. While the current flows,

the input voltage increases. The speed of this input

voltage increase depends on the time constant formed

by the load resistance R3 and load capacitance C2. The

larger the time constant, the slower the input voltage

increase. As the input voltage approaches a level equal

to the protector’s turn-on voltage, VON, the protector

turns on and operates in Low-Resistance Mode as

defined by VIN and operating current IIN.

In the event of a negative transient, or when the DC

power source is reversely connected to the circuit, the

device blocks the flow of current and holds off the

voltage, thereby protecting the USB device. Figure 18

shows the voltage and current waveforms when a virtual

USB3.0 device is reversely biased; the output voltage is

near 0 and response time is less than 50ns.

Figure 19 shows the voltage and current waveforms

when no reverse bias protection is implemented. In

Figure 17, while the reverse bias protector is present,

the input voltage, VIN, and the output voltage, VO, are

separated and look different. When this reverse bias

protector is removed, VIN and VO merge, as shown in

Figure 19 as VIN. This VIN is also the voltage applied to

the load circuit. It can be seen that, with reverse bias

protection, the voltage applied to the load and the

current flowing into the load look very much the same as

without reverse bias protection.

Benefits of Reverse Bias Protection

The most important benefit is to prevent accidently

reverse-biased voltage from damaging the USB load.

Another benefit is that the peak startup inrush current

can be reduced. How fast the input voltage rises, the

input/output capacitance, the input voltage, and how

heavy the load is determine how much the inrush

current can be reduced. In a 5V USB application, for

example, the inrush current can be 5% - 20% less with

different input voltage rising rate and other factors. This

can offer a system designer the option of increasing C2

while keeping “effective” USB device capacitance down.

 VIN, 2V/div. The voltage applied on the load circuit

 iIN, 2A/div. The input current

Time: 5

s/div

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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