© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:
Februar y 2018 - Rev. 3 FL7740
FL7740
Constant-Voltage Pri mary-Side-
Regulation PWM Controller for
Power Factor Correction
The FL7740 provides accurate CV regulation in the steady state with
differentiated dynamic function to minimize overshoot and undershoot of
output voltage in line and load transient condition. Standby power is less
than 0.3 W for smart lighting application and power factor is higher than
0.9 even at half load condition when enabling PF optimizer for wide
output power scalability.
Startup time is less than 0.2 sec with built-i n hi gh vo lta ge s t ar tup cir cui t
and output volta ge quickly reaches to the target CV le vel by loop gain
transition technique during s tartup.
Various protections such as over load, output diode short, sensing resistor
short, output short and output over voltage protection guarantee high
system reliability.
Features
Wide unive rsal input range (90 VAC ~ 305 VAC)
Precise CV regulat ion in the steady state : < ± 3 %
CV regulation in the lo ad transient : < ±10 %
Overshoot-less fas t H V start up time ( < 0.2 sec )
Low standby power
PF hi gher than 0.9 at high-line and half load by PF optimizer
Pulse-by-pulse current li mit
Output short protection
Output over voltage protec tion
Output diode short protection
Sensing resistor short & open protection
Over load protection
Typical Applic ations
LED Lighti ng System
AC-DC Adapters, TVs, Monitors
Off Line Appliances Requiring Power Factor Correction
www.onsemi.com
SO 10L
NB
MARKING DIAGRAM
ZXYKK
Z = Plant code
X = 1 digit year code
Y = 1 digit week code
KK = 2 digit lot traceability code
M = Package code
A = Product version
FL7740
MA
PIN CONNECTIONS
VDD
GND
GATE
CS
VS
HV
NC
COMV
BIAS
PF
ORDERING INFORM ATION
See detailed ordering and shipping information in the
package dimensions section on page 13 of this data sheet.
FL7740
www.onsemi.com
2
FL7740
GATE
GND
VS
BIAS
VDD
COMV
NC
HV
CS
PF
Secondary
DC-DC
Converter
Dimming
Control
Module
Dimming
Signal
VAC
VOUT.MAIN
VOUT.BIAS
0-10, DALI,
Wireless, etc.
Figure 1. Application Schematic
COMV
VS
HV
CS
VDD
JFET
GM amp.
V
EAV
V
REF
Dynamic
control
Gain control at startup
BIAS
PF
5V regulator
Digital PF
optimizer
C
PF
detector V
DYN-REF
control
Protection
GATE
VDD
EAV
Shutdown
V
OUT
open/short protection
R
CS
open/short protection
Over current protection
Over load protection
Thermal shutdown
V
IN.PK
Digital Duty Control
NC
GND
Driver
V
DYN-REF1,2,3
S/H
Figure 2. Simplified Block Diagram
FL7740
www.onsemi.com
3
PIN FUNCTION DESCRIPT ION
Pin No. Pin Name Function Description
1 VDD IC Suppl y IC operati ng current and MOSFET driving current are suppl i ed using this pin.
2 GND Ground Controller ground pin.
3 GATE PWM Driver Output This pin uses the internal totem-pole output driver to drive the power MOSFET.
4 CS Current Sense
Connected to a current sense resist or to detect the MOSFET current for pulse-by-
pulse current limit.
5 VS Voltage Sense This pin is connected to the auxiliary winding of the t ransf orm er via a resistor
divider to detect the output voltage.
6 PF Power Factor This pin is connected to a resistor to optimize power factor.
7 BIAS Int ernal Circui t BIAS Bypass pin for t he internal suppl y, which powers all cont rol circuitry on t he IC.
8 COMV Loop Compensation This pin is connected to a capacitor between COMV and GND for compensation.
9 NC No Connection
10 HV High Voltage This pin is connected to the rectified input voltage via a resistor for fast startup.
FL7740
www.onsemi.com
4
MAXIMUM RATINGS (Note 1)
1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionali t y should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHA RACTERISTICS, RECOMMENDE D OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This devic e series incorporat es ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114)
ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115)
Latchup Current Maximum Rating: ≤150 mA per JEDEC standard: JESD78
RECOMMENDED OPER ATING RANGES (Note 4)
4. Funct i onal operati on above the stress es listed i n the Recommended Operating Ranges is not impli ed. Extended exposure to stresses
beyond the Recommended Operating Ranges lim its may aff ect device reliabi l i t y.
Rating
Symbol
Unit
HV Pin Voltage Range
VHV(MAX)
560 V
VDD, GATE Pin Voltage Range
VMV(MAX)
V
COMV, PF, BIAS, VS, CS Pin Voltage Range
VLV(MAX)
V
VS, C S Pin Negative Pulse Voltage at ILV < 0.2 A and tPULSE < 300 ns
VLV(PULSE) -1.5 V
Maximum Power Dissipati on (TA < 50°C)
PD(MAX)
mW
Maximum Juncti on Temperat ure
TJ(max)
°C
Storage Temperature Range TSTG -55 to 150 °C
Junction-to-Ambient Thermal Impedance
RθJA
°C/W
Junction-to-Case Thermal Impedance
RθJC
°C/W
ESD Capability, Human Body Model (Note 3)
ESDHBM 2 kV
ESD Capability, Charged Device Model (Note 3)
ESDCDM 2 kV
Rating Symbol Min Max Unit
Ambient Temperature
TA
-40
125
°C
FL7740
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS
VDD = 18 V and TJ = -40 ~ 125°C u nless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
VDD Section
Turn-On Threshold Voltage VDD-ON 14.5 16.0 17.5 V
Turn-Off Threshold Voltage VDD-OFF 6.75 7.75 8.75 V
Operating Current CLOAD = 1 nF, VDD = 18V IDD-OP 3 5 6.5 mA
Operating Current during Aut o Restart IDD-AR 0.3 1 mA
VDD Over-Voltage-Protection VDD-OVP 24 25 26 V
VBIAS Voltage VBIAS 4.85 5.00 5.15 V
GATE Section
Output Voltage Low VOL 0.2 V
Output Voltage High VDD = 18 V VOH 17.8 V
Peak Sourcing Current
Design guaranteed
CLOAD = 1 nF, VDD = 20 V
CLOAD = 1 nF, VDD = 23 V
Isource
180
210 mA
Peak Sinking Current
Design guaranteed
CLOAD = 1 nF, VDD = 20 V
CLOAD = 1 nF, VDD = 23 V
Isink
385
435 mA
Rising Time CLOAD = 1 nF tr 110 150 190 ns
Falling Time CLOAD = 1 nF tf 40 60 80 ns
HV Section
Supply Current From HV Pin VHV = 560 V, VDD = 0 V IHV 3 9 mA
Leakage Current after Start up IHV-LC 1 10 μA
JFET Regulation Time at Startup Desi gn guarant eed tR-JFET 400 500 600 ms
VDD High Limit during JFET Regulation VDD-JFET-HL 17.5 19.0 20.5 V
VDD Low Limit during JFET Regulation VDD-JFET-LL 15.5 17.0 18.5 V
PWM Section
Min. Turn-on Time Min. Limit Design guarant eed TON-MIN-MIN 0.40 μs
Min. Turn-on Time Max. Limit Design guaranteed TON-MIN-MAX 2.0 μs
Max. Turn-on Tim e Design guarant eed TON-MAX 23.3 μs
Oscillato r Section
Max. Frequency fMAX 60 65 70 kHz
Min. Frequency fMIN 0.72 0.80 0.88 kHz
Current Sense Section
Leading-Edge Blanking T ime Design guaranteed tLEB 300 ns
Propagation Delay t o GATE Design guarant eed tPD 50 100 150 ns
Voltage Sense Section
tDIS Blanking Time at VS Sampling Design guaranteed tDIS-BNK 0.95 1.00 1.05 μs
VS Clamping Voltage
IVS=1 mA
IVS=10 µA
VVS-CLAMP
-0.1
0.35
V
Feedback Section
Reference voltage VREF 3.465 3.5 3.535 V
FL7740
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS
(CONTINUED)
VDD = 18 V and TJ = -40 ~ 125°C u nless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
CV Regulation Toleranc e
VVS = 3.5 V, TJ = 25 °C
VVS = 3.5 V, TJ = -40~125 °C
CVREGULATION
-0.7
-1.2
+0.7
+1.2
%
Transconductance gM 16 20 24 μmho
COMV Sink Current VVS = 4 V ICOMV-SINK 8 10 12 μA
COMV Source Current VVS = 3 V ICOMV-SOURCE
8 10 12 μA
COMV High Voltage VCOMV-HGH 4.7 V
COMV Low Voltage VCOMV-LOW 0.1 V
Start Sequence Section
Sof t Start Time Design guaranteed tSOFT-START 25.6 ms
SS 1 Minim um Time Design guaranteed tSS1-MIN 2 ms
SS1 Maximum Time Design guaranteed tSS1-MAX 100 ms
SS21 Time Design guaranteed tSS21 45 ms
SS22 Maximum Time Design guaranteed tSS22 30 ms
Dynamic Section
DYN Reference Set Threshold VDYN-REF-SET 0.72 0.80 0.88 V
DYN Reference Set Time Design guaranteed tDYN-REF-SET 5 μs
OV Reference 5 Design guaranteed VOV-REF5 +20 %
OV Reference 4 VOV-REF4 +14 +15 +16 %
OV Reference 3 VOV-REF3 +9 +10 +11 %
OV Reference 2 VOV-REF2 +4.7 +5.7 +6.7 %
OV Reference 1 VOV-REF1 +1.86 +2.86 +3.86 %
UV Reference 1 VUV-REF1 -3.86 -2.86 -1.86 %
UV Reference 2 VUV-REF2 -6.7 -5.7 -4.7 %
UV Reference 3 Design guaranteed VUV-REF3 -10 %
Protection Section
Auto Restart Delay Time Design guaranteed tAR 3 s
VS Ouptut Short Hys. Voltage 'H' VVS-OS-H 0.85 0.90 0.95 V
VS Ouptut Short Hys. Voltage 'L' VVS-OS-L 0.65 0.70 0.75 V
OSP Delay Time Design guaranteed tOSP-DELAY 35 ms
High Current Limit Threshold VCS-HIGH-CL 1.13 1.20 1.27 V
Low Current Limit Threshold VCS-LOW-CL 0.15 0.20 0.25 V
Over Current Protecti on Voltage VCS-OCP 1.8 V
CS Threshold Voltage for SRSP VCS-SRSP 0.040 0.075 0.125 V
Max. Turn-on Time for SRSP
IVS = 100 uA
IVS = 700 uA
tTON-MAX-SRSP
7.5
1.3
10.0
1.6
12.5
1.9
μs
Threshold Temperature f or OTP Design guaranteed TOTP 150 oC
Junction Temperature Hysteresis Design guaranteed TOTP-HYS 30 oC
FL7740
www.onsemi.com
7
TYPICAL CHARACTERISTIC
S
12
13
14
15
16
17
18
19
20
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
DD-ON
(V)
Figure 3 V DD-ON vs. Temperature
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
BIAS
(V)
Figure 4 V BIAS vs. Temperature
6.50
6.75
7.00
7.25
7.50
7.75
8.00
8.25
8.50
8.75
9.00
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
DD-OFF
(V)
Figure 5 V DD-OFF vs. Temperature
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
CS-HIGH-CL
(V)
Figure 6 V CS-HIGH-CL vs. Temperature
3.40
3.42
3.44
3.46
3.48
3.50
3.52
3.54
3.56
3.58
3.60
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
VREF (V)
Figure 7 V REF vs. Temperature
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
CS-OCP
(V)
Figure 8 V CS-OCP vs. Temperature
FL7740
www.onsemi.com
8
TYPICAL CHARACTERISTIC
S
TJ, JUNCTION TEMPERATURE (ºC)
CV
REGULATION
(%)
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-40 -20 020 40 60 80 100 120 140
Figure 9 CVREGULATION vs. Temperature
9.5
9.6
9.7
9.8
9.9
10.0
10.1
10.2
10.3
10.4
10.5
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
VOV-REF3 (%)
Figure 10 V OV-REF3 vs. Temperature
2.10
2.25
2.40
2.55
2.70
2.85
3.00
3.15
3.30
3.45
3.60
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
OV-REF1
(%)
Figure 11 V OV-REF1 vs. Temperature
-3.60
-3.45
-3.30
-3.15
-3.00
-2.85
-2.70
-2.55
-2.40
-2.25
-2.10
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
UV-REF1
(%)
Figure 12 V UV-REF1 vs. Temperature
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.2
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
V
OV-REF2
(%)
Figure 13 V OV-REF2 vs. Temperature
-6.2
-6.1
-6.0
-5.9
-5.8
-5.7
-5.6
-5.5
-5.4
-5.3
-5.2
-40 -20 020 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (ºC)
VUV-REF2 (%)
Figure 14 V UV-REF2 vs. Temperature
FL7740
www.onsemi.com
9
APPLICATION INFORMATION
General
FL7740 is high power factor flyback controller with
accurate primary side constant voltage regulation for
smart LED lighting and AC-DC adapter, TV & monitors
application. Precise outp ut voltage detection and
dynamic function manage good CV regulation. Startup is
fast with int ernal HV biasing circuit with oversho ot-less
gain control. It guarantees high system reliable
protection functions such as output over voltage, output
short, over loa d, over current and thermal shut down
protections.
Constant Voltage Regulation
VS pin detects output voltage information (=VEAV)
during secondary side diode conduction time and
internal gm amplifier regulate s the de te c te d voltage at
3.5 V.
Dynamic Response at Load Transient
At load transient condition, V EAV is sho rtly out of
regulation due to the narrow PFC loop ba ndwidth. Whe n
VEAV is far from 3.5 V regulation reference, duty is
quickly changed to b ring the VEAV back to 3.5 V by
dynamic control funct i on.
HV biasing at startup
Internal HV biasing circuit quickly charge s external
VDD capacitor to begin IC ope ration at plug-in. After
500 ms initial time, HV biasing stops for low standby
power.
Overshoot-less gain control at startup
Once IC operation starts, feedback loop is dominantly
controlled in proportional gain to speed up the output
capacito r c har gin g. Once output voltage is settled down
close to the regu lation target, gain control is smoothly
chan ged to integratio n gain with no output vol tage
overshoot.
Digital PF optimizer
FL7740 compensa tes input current phase shift caused by
EMI filter cap a c itor current in a half line p e riod. With
sophisticated d igital PF optimizer, FL7740 significantly
improves power factor in the wide load range.
Pulse-by-pulse current li mit
When CS pin volta ge r e a c hes to 1. 2 V current limit
reference, GATE turn-on is terminated to limit pri mar y
peak current.
Auto Restart at Protection
Once protection is triggered, IC operation stops for 3 sec
and begin the operation for auto restart.
Output Short Protection
When VEAV is less than 0.7 V continuously for 35 ms,
output short p rotection is trigg e red.
Output Over Voltage Protection
When VEAV is higher than VVS-OVP threshold or VDD is
higher tha n VDD-OVP, output over voltage protection is
triggered.
Output Diode Short Protection
Once output d iode is short circuited, high di/dt in the
pri mary windin g is occurred by leakage inductance.
Once CS pin voltage reaches to 1.7 V, switching is shut
down.
Sensing Resistor Short Protection
At first switching, sensing resistor short conditio n is
monitored by detecting CS pin volta ge. If CS is less than
75 mV during fir st GATE turn-on time, sensing r esistor
short prote c tion is triggered.
Over Load Protection
When output is o ver loaded, pulse-by-pulse current li mit
event is occurred. If this event lasts for 60 half line
cycles, over load protection is triggered.
Thermal Shut Down
If inte rnal junction temperature is higher than 150ºC,
protection is triggered and released with 30ºC hyster esi s.
FL7740
www.onsemi.com
10
Primary Side Constant Voltage Regulation
FL7740 utilizes auxiliary winding to detect output
voltage during secondary side diode conduction time
(=TDIS). The true output voltage le vel wi t hout secondary
diode forward voltage drop is at the end of secondary
diode c onduction time. In order to detect the right outp ut
voltage, 85% of TDIS at pre vious switching c ycle is
sampling ti me for VEAV detection at current switc hing
cycle.
S/H
VS V
REF
Error
Amp.
V
EAV
COMV
T
DIS
detection
Duty
Control
N
AUX
V
IN.PK
Figure 15. Primary Side Regulation
VS
GATE
85% TDIS
at previous
switching
TDIS
VEAV sampling
Figure 16. VEAV Detection
The sampled VEAV is compared with 3.5 V VREF at the
input of the erro r amplifier. Several hundreds nF
capacitor is connected to the output of the error amplifier
at COMV pin to keep feedback loop slow in PFC control.
COMV voltage controls duty to regulate VEAV same as
VREF in the system.
Turn-on time is controlled by both COMV voltage and
VIN.PK information in line feedforward operation in order
to keep the constant COMV v oltage in the wide inp ut
voltage range. So, turn-on time is proportional to COMV
voltage and inversely proportional to VIN.PK.
Startup
After plug-in, e xter nal VDD capacitor is quickly
char ged by inter nal HV b iasing sup ply. Even after VDD
is higher t han 16 V VDD-ON, inte rnal HV biasing is still
enabled for 500 ms, so HV biasing can relieve VDD
capacito r discharging until auxiliary winding b ui ld s up
VDD voltage.
In order to speed up large output capacitor charging
without overshoot, FL7740 starts with proportional gain
duri ng star tup seque nce (SS1 + SS2) by using int erna l
resistive load at the output of the e r ror amplifier.
In SS1, CCM prevent operation is enabled for the initial
2 ms. When output voltage is 0 V, deep CCM could be
entered at initial startup and C S c ould touch OCP level
with startup failur e. So, pulse-by-pulse current limit is
0.2 V and switching fre quency is 2 2 kHz d uring the 2 ms
CCM prevent time. Also, duty is gradually increased for
26 ms for soft startup. Once 5 V pulled-up COMV
voltage drops less than 4.5 V as VEAV is close to V REF,
SS1 is ended. Maximum SS1 time is limited up to 100
ms.
In SS2, VCOMV drops from 5 V and goe s into p-gain
steady state in which VEAV is little bit lower than VREF
due to the error amplifier inpu t e rror in p-gain. Once p-
gain stead y state is settled down in 45 ms, SS2 is
finished at min. VCOMV range not to make oversho ot
when transitio ning to i-gain after SS2. FL7740 ends SS2
by moni toring VIN 1.5 ms after VIN.PK detection moment
where VCOMV is general ly in the min. range.
V
COMV
Duty
V
EAV
V
IN
V
REF
Startup time by P-gain I-gain
45 ms
4.5 V
26 ms soft start
2 ms CCM prevent
5.0 V
V
IN.PK
1.5 ms
SS1 SS2
Figure 17. Startup Sequence
Dynamic CV Regulation
Due to the narrow loop bandwidth, PFC controller
gener ally does not guarantee good CV regulation at load
transient. Espe c ia lly in second a ry side regulation,
primary side controller does not know the output voltage
level and it only monitors the output of feedback signal
through opto-coupler. The refore, out put voltage
undershoot is severely happened at no to full load
transient in the co nventional S SR PFC control.
In order to overcome this, FL7740 utilizes the benefit of
P S R wit h ON semiconductors proprietary dynamic duty
control by monitoring the output voltage. For example,
when V EAV i s l ess tha n VUVD.EN (Under Volta ge Dynamic
Enable threshold), duty is quickly increa sed not to allo w
undershoot anymore. Once VEAV rises hig her than
VUVD.DIS (Under Voltage Dynamic Disable threshold),
duty quickly drops and follows COMV voltage . During
the VEAV hi ccup o peration, COMV voltage slowly
increases and dynamic operation is terminated when
COMV voltage is close to stea dy state level.
FL7740
www.onsemi.com
11
V
REF
GM amp.
V
EAV
COMV
V
OVD.EN2
Over
Voltage
Dynamic
(OVD)
Under
Voltage
Dynamic
(UVD)
V
OVD.EN1
V
UVD.EN
V
UVD.DIS
Duty
Generator
V
OVD.DIS
GATE
Figure 18. Dynamic Function Block
V
REF
V
EAV
V
COMV
V
UVD.EN
V
UVD.DIS
Duty
Figure 19. No to full load transient
V
REF
VEAV
VCOMV
V
OVD.EN1
V
OVD.DIS
Duty
V
OVD.EN2
Figure 20. Full to no load transient
In case of OVD (Over Voltage Dynamic) function, it
has two enable levels (VOVD.EN1 a nd VOVD.EN2) . If output
voltage overshoot at load transient is too high, VEAV
increases to VOVD.EN2 passing by VOVD.EN1. Duty quickl y
drops when reaching V OVD.EN1 and drops to min. level at
once not to allow severe output over voltage when VEAV
increases higher than VOVD.EN2.
FL7740 provides two sets of dynamic triggering
threshold. When user prefe rs narrow output voltage
variation at load transient with large output capacitor,
SET0 can be selected without capacitor at PF pin. If
wider output voltage variatio n is allowed and o utp ut
capacitor should be small due to system size, SET1 can
be selected with connection of capacitor around 0.5 nF at
PF pin. FL7740 detects capacitance at PF pin at the
beginning of swit chi ng star tup a nd mai nt ains the SET#
until UVLO is tr iggered. During the 1st switching, PF
pin is pulled down to 0 V. In the 2nd switching, PF pull
down is disabled and PF voltage is monitored 5 us after
2nd switching period b egins. If the PF voltage is higher
than 0.8 V VDYN-REF-SET, SET0 is decided. If not, SET1 is
determined.
Dynamic Threshold at SET0 and SET1
VVS.OVP VOVD.EN2 VOVD.EN1 VOVD.DIS VUVD.DIS VUVD.EN
VOV-REF5
+20%VREF SET1
VOV-REF4
+15%VREF SET0 SET1
VOV-REF3
+10%VREF SET0 SET1
VOV-REF2
+5.7%VREF SET0 SET1
V
OV-REF1
+2.9%VREF SET0
VUV-REF1
-2.9%VREF SET0
VUV-REF2
-5.7%VREF SET1 SET0
VUV-REF3
-10%VREF SET1
Digital PF Optimizer
As line voltage increases and output load decreases, PF
is degraded due to the effect of EMI filter capacitor
char ging/disc hargi ng current. Input current is the sum of
EMI Filter capacitor current and flyback input current.
Whet her the flyb ack input current is exactly in-phase
sinusoidal current with line voltage, 90º phase shifted
EMI filter cap current worsens displacement factor of the
overall system i nput c urrent.
The ON semiconductors proprietary PF optimizer
accurately compensates the EMI filter capacitor current
and improves PF more than 0.1 at high line and half load
condition.
The calculation coefficient in the PF optimizer is
externally programmable by supplying a certain level of
voltage at PF pin with external resistive divider from 5 V
FL7740
www.onsemi.com
12
BIAS p in. Before 1st switching, FL7740 converts the PF
voltage int o digit al value without switching noise and
keeps the digital value for the coefficient until UVLO is
triggered.
Recommended VPF is in Equat ion 1, where LM is
magne tizing inductance and CEMI is total EM I filter
capacitance.
1.5
10
5
V
9
PF
+×××=
EMIM
CL
(eq. 1)
As VPF increases, the coefficient in the PF optimizer
calculatio n is larger with better PF, but THD is worse
due to the input current distor tion at input voltage zer o
cross. Therefore, VPF adjustment by changing PF
resistors is recommended to bring the best PF and THD
performance to meet users target. When VPF is lower
than 1.5 V, PF optimizer is disabled.
I
EMI.CAP
I
FLYBACK
V
IN
I
IN
GATE
T
ON
Ideal I
IN
Figure 21. With PF Optimizer
V
IN
I
IN
GATE
T
ON
I
EMI.CAP
I
FLYBACK
(=Ideal I
IN
)
Leading
phase
Figure 22. Without PF Optimizer
Protection
Auto-restart
Once protec tion is triggered, FL7740 terminates
switching and internal 3 se c counter makes delay time.
In 3 sec, VDD voltage is regulated between 17 V and 19
V by internal HV b ia sing not to fall in UVLO. After 3
sec, VDD falls down to 7.75 V VDD-OFF and IC is reset
with released protection. When VDD voltage is up again
to 16 V VDD-ON, FL7740 begins startup sequence.
VDD
GATE
19 V
17 V
7.75 V
16 V
Protection
triggered
VDD regulation
for 3 sec
IC
reset IC
restart
Figure 23. Auto Restart
Output Over Volta ge Protection
Output ove r voltage is hardly triggered due to the
powering limit by dynamic function. But , in the
abnormal condition, output OVP is triggered when VEAV
is higher than 4.0 V @ SET0 / 4.2 V @ SET1 for 4
switching cycles or V DD voltage is higher tha n 25 V for
10 us delay.
Output Short Protection
At output short c ondition, VEAV is less than 0.7 V. I f this
condition lasts for continuous 3 5 ms switching time,
OSP is trigger e d.
Over Current Protection
When CS volt age is higher than 1.8 V over the 1.2 V
pulse-by-pulse current l imit, protection is immediately
triggered. OCP protects output diode short, sensing
resistor open and transformer saturatio n co nd ition.
Sensing Resistor Sho rt Protection
1st switching is 0.2 V current mode. If CS doesnt reach
over 75 mV threshold during 1st turn-on time, SRSP is
triggered. Max. turn-on time at 1st switching is i nversely
proportio nal to input voltage to limit the primary peak
current.
Over Load Protection
At over load condition, CS reaches to 1.2 V pulse-by-
pulse current limit. FL7740 generates internal ZC (Zero
Cross) signal a nd OLP is trigge r e d if the event (1.2V
current limit event b etween the two close ZC signals) is
occurred for consecutive 60 ZC si gna ls.
V
IN
CS
ZC
OLP
1.2 V
current limit
event
1
0 0 2358
57 59 60
OLP Count
Figure 24. Over Load Protection
Thermal Shut Down
When i nternal junctio n temp era ture is higher than
150ºC, TS D i s triggered and protection is released when
the junction temperature drops under 120ºC.
FL7740
www.onsemi.com
13
AC Input
Secondary
DC-DC
Converter
MCU
module
Dimming
Signal
PG
(Power GND)
SG
(Signal GND)
FL7740
GATE
VS
BIAS
VDD
COMV
NC
HV
CS
PF
GND
PG line goes
under R
HV1
G
D
S
R
HV1
R
GATE
CS line goes
under R
GATE
R
HV2
VDD line goes
under R
HV2
R
HV3
SG line goes
under R
HV3
1
2
3
4
5
G-GATE and S-GND distance should be short.
SG and PG are connected close at GND pin.
COMV,BIAS,PF,VS circuit ground and aux. winding
VDD circuit ground are connected close at GND pin.
SMD filter cap is connected close at VDD and GND pin.
Powering lines (Drain and PG) are closely placed and
away from FL7740 control circuits.
1
2
3
4
5
Bridge
diode
Single layer PCB layout guidance
ORDERING INFORMATION
Device Package Shipping
FL7740MX 10 Lead SOIC, JDEC MS-012, 150” Narrow Body Tape and Reel
FL7740
PACKAGE DIMENSIONS
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States
and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON
Semiconductor’s product/patent coverage may be accessed at www.onse mi.com/si te/pdf/Patent-Marki ng.pdf. ON Semiconductor reserves the right to make changes without further
notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitabi lity of its products for any particular purpose, nor does ON
Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. Buyer is responsi ble for its products and applications using ON Semi conductor products, including compli ance with all laws, regulations and
safety requirements or standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor
does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in
life support systems or any FDA Class 3 med ical devices or medi cal devices wi th a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in
the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON
Semiconductor and i ts officers, employees, subsidiari es, affiliates, and distributors harml ess against all claims, costs, damages, and expenses, and reasonable attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 3 03-675-2176 or 800-344-3867 T oll Free USA/Canada
Email: order l i t@onsem i.com
N. Amer i c an T echnical Support: 800-282-9855 Toll Free
USA/Canada.
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phon e: 81-3-5817-1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative