Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 6/01A
Silicon PIN Diode Chips
Features
■Established Alpha PIN Diode Process
■For Switch and Attenuator Applications
■Low Capacitance Designs to 0.05 pF
■Voltage Ratings to 200 V
■Chip Size Smaller than 15 Mils Square
APD Series
Description
Alpha’s APD Series of silicon PIN diode chips are
designed f or use as switch and atten uator devices in high
perf ormance h ybrid microwav e integr ated circuits.These
PIN diode designs are useful over a wide range of
frequencies from below 100 MHz to beyond 30 GHz.
These devices utilize Alpha’s well established silicon
technology resulting in high resistivity and tightly
controlled I region width PIN diodes. APD0505-00
through APD1510-000 are primarily designed for fast
speed through moderate speed s witch applications.The y
have low resistance and capacitance at zero bias and
re verse bias .The thick I region APD2220-000 is primarily
designed for low distortion attenuator applications.
Capacitance Capacitance Rs Voltage θθ
VR= 50 V, VR= 0 V, I = 10 mA, TL Rating Thermal Contact
Part Number 1 MHz 1 GHz 500 MHz I = 10 mA IR= 10 uA I Region Resistance Diameter Outline
(pF) (pF) (ΩΩ) (nS) (V) (µµM) (C/W) (Mils) Drawing
Max. Typ. Max. Typ. Min. Nom. Max. Nom.
APD0505-000 0.05 0.10 2.0 20 50 5 100 1.5 150-806
APD0510-000 0.10 0.20 1.5 40 50 5 80 2.5 150-801
APD0805-000 0.05 0.10 2.0 50 100 8 80 2.0 150-801
APD0810-000 0.10 0.15 1.5 160 100 8 60 3.0 150-801
APD1510-000 0.10 0.20 2.0 300 200 15 60 3.0 150-801
APD2220-000 0.20 0.20 4.0 400 100 50 80 7.5 149-815
Electrical Specifications at 25°C
Characteristic Value
Power Dissipation
Pdiss
= W
Operating Temperature -65°C to +175°C
Storage Temperature -65°C to +200°C
Absolute Maximum Ratings
175-
Tamb
θ
Silicon PIN Diode Chips APD Series
2Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com
Specifications subject to change without notice. 6/01A
0.014 ± 0.001
(0.350 ± 0.025 mm)
0.014 ± 0.001
(0.350 ± 0.025 mm)
CATHODE METALIZED BACK
CONTACT GOLD
ANODE
METALIZED
GOLD DOT
0.002 (0.051 mm)
MIN. DIA.
0.004 (0.127 mm) MIN.
0.006 (0.152 mm) MAX.
Outline Drawings
149-815
ANODE
METALIZED
GOLD DOT
SILICON
CATHODE METALIZED BACK
CONTACT GOLD
0.004 (0.127 mm) MIN.
0.006 (0.152 mm) MAX.
0.010 (0.251 mm) MIN.
0.014 (0.356 mm) MAX. SQ.
150-801:
0.002 (0.051 mm) MIN.
150-806:
0.0011 (0.028 mm) MIN.
150 Series
Description Symbol APD0505-000 APD0510-000 APD0805-000 APD0810-000 APD1510-000 APD2220-000 Unit
Saturation Current IS 6.40E-14 5.50E-17 1.20E-11 1.50E-12 1.60E-10 2.00E-09 A
Series Resistance RS0.25 0.50 1.00 0.30 1.00 0.20 Ω
Emission Coefficient N 1.40 1.02 1.70 1.48 1.80 1.90
Reverse Breakdown BV50.00 50.00 100.00 100.00 200.00 200.00 V
Current at BVIBV 10E-06 10E-06 10E-06 10E-06 10E-06 10E-06 A
Zero Bias Capacitance CJ0 0.12E-12 0.18E-12 0.13E-12 0.16E-12 0.25E-12 0.2E-12 F
Junction Potential VJ1.00 1.00 1.00 1.00 1.00 1.00 V
Grading Coefficient M 0.50 0.50 0.50 0.50 0.50 0.50
Transit Time TT 20E-9 40E-9 50E-9 160E-9 300E-9 400E-9 s
SPICE Model Parameters
Typical Performance Data
Resistance (Ω)
Forward Current (mA)
Resistance vs. Forward Current @ 1 GHz
0.1
1
10
100
1000
0.01 0.1 1 10 100
APD0505-000
APD0510-000
APD0805-000
Resistance (Ω)
Forward Current (mA)
Resistance vs. Forward Current @ 1 GHz
0.1
1
10
100
1000
0.01 0.1 1 10 100
APD0810-000
APD1510-000
APD2220-000
