AP512-PCB - WJ Communications, Inc.

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 5 June 2006

AP512

UMTS-band 8W HBT Amplifier Module Product Information

The Communications Ed

e TM

Product Features

• 2110 – 2170 MHz

• 28.5 dB Gain

• -55 dBc ACLR

@ 28 dBm W-CDMA linear power

• +39 dBm P1dB

• +12 V Single Supply

• Power Down Mode

• Bias Current Adjustable

• RoHS-complaint flange-mount pkg

Applications

• Final stage amplifiers for Repeaters

• Optimized for driver amplifier PA

mobile infrastructure

Product Description

The AP512 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package. The multi-stage

amplifier module has 28.5 dB gain, while being able to

achieve high performance for UMTS-band applications with

+39 dBm of compressed 1dB power. The module has been

internally optimized for linearity to provide -55 dBc ALCR

at 28 dBm power for W-CDMA applications.

The AP512 uses a high reliability InGaP/GaAs HBT process

technology and does not require any external matching

components. The module operates off of a +12V supply and

does not requiring any negative biasing voltages; an internal

active bias allows the amplifier to maintain high linearity

over temperature. It has the added feature of a +5V power

down control pin. A low-cost metal housing allows the

device to have a low thermal resistance and achieves over

100 years MTTF. All devices are 100% RF and DC tested.

The AP512 is targeted for use as a driver or final stage

amplifier in wireless infrastructure where high linearity and

high power is required. This combination makes the device an

excellent candidate for next generation multi-carrier 3G base

stations or repeaters using the UMTS frequency band.

Functional Diagram

Top View

Pin No. Function

1 RF Output

2 / 4 Vcc

3 / 5 Vpd

6 RF Input

Case Ground

Specifications (1)

Parameter Units Min Typ Max Test Conditions

Operational Bandwidth MHz 2110 – 2170

Test Frequency MHz 2140

Adjacent Channel Leakage Ratio dBc -55 -50 W-CDMA +28 dBm Total Power, ±5 MHz offset

Power Gain dB 26 28.5 31 Pout = +28 dBm

Input Return Loss dB 14

Output Return Loss dB 6

Output P1dB dBm +39

Output IP3 dBm +53 Pout = +28 dBm/tone, Δf = 1 MHz

Operating Current (2) A 1.72 Pout = +28 dBm

Quiescent Current, Icq (2) A 1.55 1.69 1.80

Device Voltage, Vcc V +12

Device Voltage, Vpd (3) V +5 Pull-down voltage: 0V = “OFF”, 5V=”ON”

Ruggedness VSWR 10:1 Pout = +39 dBm CW, all phases

1. Test conditions unless otherwise noted: 25ºC.

2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).

Absolute Maximum Rating

Parameter Rating

Operating Case Temperature -40 to +85 °C

Storage Temperature -55 to +150 °C

RF Input Power (continuous)

WCDMA signal (3GPP Test Model 1+ 32 DPCH) +10 dBm

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No. Description

AP512 UMTS-band 8W HBT Amplifier Module

AP512-PCB Fully-Assembled Evaluation Board

1 2 3 4 5 6

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 5 June 2006

AP512

UMTS-band 8W HBT Amplifier Module Product Information

The Communications Ed

e TM

Class AB Configuration (AP512-PCB)

The AP512-PCB and AP512 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for

the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the

amplifier module, as described on the next page.

Notes:

1. Please note that for reliable operation, the evaluation board and

mounting plate will have to be attached to a much larger heat sink

during operation and in laboratory environments to dissipate the

power consumed by the device. The use of a convection fan is also

recommended in laboratory environments. Details of the mounting holes

used in the WJ mounting plate are given on the last page of this datasheet.

2. The area around the module underneath the PCB should not contain any

soldermask in order to maintain good RF grounding.

3. For proper and safe operation in the laboratory, the power-on sequencing

should be followed:

1. Connect RF In and Out

2. Connect the voltages and ground pins as shown in the circuit.

3. Apply the RF signal

4. Power down with the reverse sequence

DNP DNP DNP DNP

DNP

0Ω 0Ω

0Ω

.01μF

.01

F100pF

100pF

+12V

GND

+5V

6 5 4 2 3 1

RF IN RF OUT

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 5 June 2006

AP512

UMTS-band 8W HBT Amplifier Module Product Information

The Communications Ed

e TM

Performance Graphs (AP512-PCB)

Gain vs. Output Power

Vcc=12V, Icq=1.7A, 25 °C

24 26 28 30 32

Output Power (dBm)

Gain

(

)

2110MHz

2140MHz

2170MHz

Gain vs. Output Power

Vcc=12V, Icq=1.7A, 2140 MHz

24 26 28 30 32

Output Power (dBm)

Gain

(

)

-40 °C +25 °C +85 °C

ACLR vs. Output Power

W-CDMA 3GPP Test Model 1+32, Δf=±5 MHz, Vcc=12V, Icq=1.7A, 25 °C

-60

-55

-50

-45

-40

24 26 28 30 32

Average Output Power (dBm)

ACLR

(

dBc

)

2110MHz

2140MHz

2170MHz

ACLR vs. Output Power

W-CDMA 3GPP Test Model 1+32, Δf=±5 MHz , Vcc=12V, Icq=1.7A, 2140 MHz

-60

-55

-50

-45

-40

24 26 28 30 32

Average Output Power (dBm)

ACLR

(

dBc

)

-40 °C

+25 °C

+85 °C

PAE vs. Output Power

Vcc=12V, Icq=1.7A, 25 °C

24 26 28 30 32

Output Power (dBm)

PAE

(

)

2110MHz

2140MHz

2170MHz

PAE vs. Output Power

W-CDMA 3GPP Test Model 1+32, 2140 MHz, Vcc=12V, Icq=1.7A

24 26 28 30 32

Output Power (dBm)

PAE

(

)

-40 °C

+25 °C

+85 °C

Icc vs. Output Power

Vcc=12V, 2140 MHz

1.5

1.6

1.7

1.8

1.9

2.0

24 26 28 30 32

Output Power (dBm)

Ic c

(

)

-40 °C +25 °C +85 °C

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 5 June 2006

AP512

UMTS-band 8W HBT Amplifier Module Product Information

The Communications Ed

e TM

MTTF Calculation

The MTTF of the AP512 can be calculated by first

determining how much power is being dissipated by the

amplifier module. Because the device’s intended application

is to be a power amplifier pre-driver or final stage output

amplifier, the output RF power of the amplifier will help

lower the overall power dissipation. In addition, the

amplifier can be biased with different quiescent currents, so

the calculation of the MTTF is custom to each application.

The power dissipation of the device can be calculated with

the following equation:

Pdiss = Vcc * Icc – (Output RF Power – Input RF Power),

Vcc = Operating supply voltage = 12V

Icc = Operating current

{The RF power is converted to Watts}

While the maximum recommended case temperature on the

datasheet is listed at 85 ˚C, it is suggested that customers

maintain an MTTF above 1 million hours. This would

convert to a derating curve for maximum case temperature vs.

power dissipation as shown in the plot below.

Maximum Recommended Case Temperature vs. Power Dissipation

to maintain 1 million hours MTTF

8 1012141618202224

Power Dissipation (Watts)

Maximum Case Temperature (°C)

To calculate the MTTF for the module, the junction

temperature needs to be determined. This can be easily

calculated with the module’s power dissipation, the thermal

resistance value, and the case temperature of operation:

j = Pdiss * Rth + Tcase

j = Junction temperature

diss = Power dissipation (calculated from above)

th = Thermal resistance = 4.5 ˚C/W

case = Case temperature of module’s heat sink

From a numerical standpoint, the MTTF can be calculated

using the Arrhenius equation:

MTTF = A* e(Ea/k/Tj)

A = Pre-exponential Factor = 6.087 x 10-11 hours

Ea = Activation Energy = 1.39 eV

k = Boltzmann’s Constant = 8.617 x 10-5 eV/ ºK

Tj = Junction Temperature (ºK) = Tj (ºC) + 273

A graphical view of the MTTF can be shown in the plot

below.

MTTF vs. Junction Temperature

1.E+05

1.E+06

1.E+07

130 140 150 160 170 180

Junction Temperature (°C)

MTTF (hours)

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 5 June 2006

AP512

UMTS-band 8W HBT Amplifier Module Product Information

The Communications Ed

e TM

Outline Drawing

23 456

AP512

Outline Drawing for the Heatsink Shipped

with the WJ Evaluation Board

The supplied mounting plate with the evaluation boar d should be mounted and attached to a larger heatsink for proper thermal

operation in a laboratory environment.

Product Marking

The device will be marked with an “AP512” designator

with an alphanumeric lot code on the top surface of the

package noted as “ABCD” on the drawing. A

manufacturing date will also be printed as “XXYY”, where

the “XX” represents the week number from 1 – 52.

The product will be shipped in tubes in multiples of 15.

ESD / MSL Information

ESD Rating: Class 1C

Value: Passes at ≥ 1,000 to < 2,000 volts

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

ESD Rating: Class III

Value: Passes ≥ 500 to < 1,000 volts

Test: Charged Device Model (CDM)

Standard: JEDEC Standard JESD22-C101