MW4IC001NR4 MW4IC001MR4
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W-CDMA.
•Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
•High Gain, High Efficiency and High Linearity
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•N Suffix Indicates Lead-Free Terminations
•In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD4.58
0.037
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case @ 85°C RθJC 27.3 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 0 (Minimum)
Machine Model M1 (Minimum)
Charge Device Model C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J -STD -020 3 260 °C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MW4IC001MR4
Rev. 3, 1/2005
Freescale Semiconductor
Technical Data
800-2170 MHz, 900 mW, 28 V
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
MW4IC001NR4
MW4IC001MR4
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 V, ID = 50 µA)
VGS(th) 2 3 5 Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 10 mA)
VGS(Q) 2 3.7 5 Vdc
Drain- Source On- Voltage
(VGS = 10 V, ID = 0.05 A)
VDS(on) — 0.48 0.9 Vdc
Forward Transconductance
(VDS = 10 V, ID = 0.1 A)
gfs — 0.05 — S
Dynamic Characteristics
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 45 — pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.62 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Gps — 13 — dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
ηD— 29 — %
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IMD — -28 — dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IRL — -18 — dB
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz)
P1dB — 0.85 — W
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
Gps 12 13 — dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
ηD35 38 — %
Input Return Loss
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
IRL -10 -16 — dB
MW4IC001NR4 MW4IC001MR4
3
RF Device Data
Freescale Semiconductor
R2
Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic
Z9 0.062″ x 0.044″ to 0.615″ Taper
Z10 0.082″ x 0.615″ Microstrip
Z11 0.075″ x 0.044″ Microstrip
Z12 0.625″ x 0.044″ Microstrip
Z13 1.375″ x 0.044″ Microstrip
PCB Rogers RO4350, 0.020″, εr = 3.5
Z1 1.331″ x 0.044″ Microstrip
Z2 0.126″ x 0.076″ Microstrip
Z3 0.065″ x 0.175″ Microstrip
Z4 0.065″ x 0.195″ Microstrip
Z5 0.680″ x 0.145″ Microstrip
Z6, Z7 1.915″ x 0.055″ Microstrip
Z8 0.120″ x 0.141″ Microstrip
RF
INPUT Z1
VGG
Z2
Z6
C4
Z3
RF
OUTPUT
C5
DUT
VDD
Z9 Z11 Z13
Z7
Z5
C2
R1
C7
Z8 Z10
C8
+
Z12
C1
C9
L2
L1
C10
C3
C6
C11 C12 C13
Z4
Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C6 0.1 µF, 100 V Chip Capacitors C1210C104K5RACTR Kemet
C2, C3, C5, C7 43 pF, 500 V Chip Capacitors 100B430JP500X ATC
C4 12 pF, 500 V Chip Capacitor 100B120JP500X ATC
C8 22 µF, 35 V Tantalum Chip Capacitor T491X226K035AS Kemet
C9 4.7 pF, 500 V Chip Capacitor 100B4R7CP500X ATC
C10, C11 0.6- 4.5 pF, 500 V Variable Capacitors 27271SL Johanson
C12 2.7 pF, 500 V Chip Capacitor 100B2R7CP500X ATC
C13 3.3 pF, 500 V Chip Capacitor 100B3R3CP500X ATC
L1 5.6 nH Chip Inductor 0805 Series AVX
L2 10 nH Chip Inductor 1008 Series ATC
R1 100 W Chip Resistor CRCW12061001F100 Dale
R2 20 W Chip Resistor CRCW120620R0F100 Dale
4
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
C8
Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout
VGG VDD
900 MHz
MW4IC001MR4
C6
C1
C7
C2
R1
C10 C13
Rev 2
C3C9
L1
C4
R2
L2
C12
C11
C5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MW4IC001NR4 MW4IC001MR4
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
905
50
−35
−15
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
INTERMODULATION DISTORTION (dBc)IMD,
INPUT RETURN LOSS (dB)IRL,
VDS = 28 Vdc
Pout = 0.9 W (PEP)
IDQ = 14 mA
Two−Tone Measurement
100 kHz Tone Spacing
ηD
IRL
Gps
IM3
−17
−19
−21
−23
−25
−27
−29
−31
−33
46
42
38
34
30
26
22
18
14
10
900895890885880875870865860855
60
55
50
45
40
35
30
25
20
15
15
0
P1dB
Pout, OUTPUT POWER (WATTS)
Figure 4. CW Performance versus Output
Power
Gps, POWER GAIN (dB)
VDS = 28 Vdc
IDQ = 14 mA
f = 880 MHz
Gps
14
13
12
11
10
9
8
7
6
0.2 0.4 0.6 0.8 1.0 1.2 1.4 10
−25
−30
−35
−40
−45
−50
−55
10.10.01
IDQ = 8 mA
12 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
10 mA
16 mA
14 mA
18 mA
10
−25
3rd Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
VDS = 28 Vdc
IDQ = 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
5th Order
7th Order
−30
−35
−40
−45
−50
−55
−60
−65
−70
10.10.01 10
−25
10 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Third Order Intermodulation
Distortion versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
VDS = 28 Vdc
IDQ = 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
Two−Tone Measurement
−30
−35
−40
−45
−50
10.10.01
1 MHz
Tone
Spacing = 100 kHz
Two−Tone Measurement
100 kHz Tone Spacing
VDS = 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
ηD
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%)
6
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
C7
Z6Z3
Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic
Z9 0.067″ x 0.264″ Microstrip
Z10 0.457″ x 0.492″ Microstrip
Z11 0.719″ x 0.022″ Microstrip
Z12 1.149″ x 0.022″ Microstrip
Z13 0.677″ x 0.434″ Microstrip
Z14 0.095″ x 0.264″ Microstrip
Z15 0.772″x 0.044″ Microstrip
PCB Rogers RO4350, 0.020″, εr = 3.5
Z1 1.018″ x 0.044″ Microstrip
Z2 0.495″ x 0.296″ Microstrip
Z3 0.893″ x 0.500″ Microstrip
Z4 1.340″ x 0.022″ Microstrip
Z5 0.912″ x 0.022″ Microstrip
Z6 0.241″ x 0.500″ Microstrip
Z7 0.076″ x 0.150″ Microstrip
Z8 0.294″ x 0.150″ Microstrip
RF
INPUT Z1
VGG
Z2
Z4
Z5
C3
RF
OUTPUT
C5
DUT
VDD
Z10 Z13 Z15
Z11
Z7
C1
+
C2
R1
C4
Z12
Z8 Z9
C6
+
Z14
Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C6 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet
C2, C4 10 pF, 500 V Chip Capacitors 100B100JCA500X ATC
C3, C5 10 pF, 500 V Chip Capacitor 600S100JW ATC
C7 0.6- 4.5 pF, 500 V Variable Capacitor 27271SL Johanson
R1 1 kW Chip Resistor CRCW12061021F100 Dale
Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout
C3
C4
C2
C6
C5
C7
R1
VGG
MW4IC001MR4
Rev 3
VDD
C1
1990 MHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MW4IC001NR4 MW4IC001MR4
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 1990 MHz
ηD
1990
0
40
1930
−35
−11
IRL
Gps
IMD
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus
Frequency
INPUT RETURN LOSS (dB)IRL,
INTERMODULATION DISTORTION (dBc)IMD,
35
30
25
20
15
10
5
1940 1950 1960 1970 1980
−14
−17
−20
−23
−26
−29
−32
1.3
14.4
0.1
56
Gps
Pout, OUTPUT POWER (WATTS)
Figure 11. CW Performance versus Output
Power
Gps, POWER GAIN (dB)
VDD = 28 Vdc
IDQ = 12 mA
f = 1990 MHz
14.0
13.6
13.2
12.8
12.4
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
48
40
32
24
16
1
−60
−30
0.01
IDQ = 20 mA
16 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
VDD = 28 Vdc
f1 = 1990 MHz, f2 = 1990.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
12 mA
9.6 mA
−35
−40
−45
−50
−55
0.1
1
−30
0.01
3rd Order
OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion
Products versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
7th Order
5th Order
VDD = 28 Vdc
IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−35
−40
−45
−50
−55
−60
−65
−70
−75
0.1 1
−30
0.01
10 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 14. Third Order Intermodulation
Distortion versus Output Power
THIRD ORDER INTERMODULATION (dBc)IMD,
VDD = 28 Vdc
IDQ = 12 mA
f1 = 1990 MHz
f2 = f1 + Tone Spacing
Two−Tone Measurement
100 kHz
−35
−40
−45
−50
−55
−60
0.1
1 MHz
P1dB
VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA
Two−Tone Measurement, 100 kHz Tone Spacing
ηD
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%)
8
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
C7
Z6Z3
Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic
Z9 0.106″ x 0.344″ Microstrip
Z10 0.783″ x 0.500″ Microstrip
Z11 0.847″ x 0.022″ Microstrip
Z12 1.055″ x 0.022″ Microstrip
Z13 0.291″ x 0.387″ Microstrip
Z14 0.050″ x 0.287″ Microstrip
Z15 0.950″ x 0.044″ Microstrip
PCB Rogers RO4350, 0.020″, εr = 3.5
Z1 1.267″ x 0.044″ Microstrip
Z2 0.058″ x 0.044″ Microstrip
Z3 0.758″ x 0.256″ Microstrip
Z4 1.073″ x 0.022″ Microstrip
Z5 1.361″ x 0.022″ Microstrip
Z6 0.205″ x 0.332″ Microstrip
Z7 0.109″ x 0.150″ Microstrip
Z8 0.210″ x 0.150″ Microstrip
RF
INPUT Z1
VGG
Z2
Z4
Z5
C3
RF
OUTPUT
C5
DUT
VDD
Z10 Z13 Z15
Z11
Z7
C1
+
C2
R1
C4
Z12
Z8 Z9
C6
+
Z14
Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C6 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet
C2, C4 10 pF, 500 V Chip Capacitors 100B100JCA500X ATC
C3, C5 10 pF, 500 V Chip Capacitor 600S100JW ATC
C7 0.6- 4.5 pF, 500 V Variable Capacitor 27271SL Johanson
R1 1 kW Chip Resistor CRCW12061021F100 Dale
Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout
C3
C4
C2
C6
C5
C7
R1
VGG
2170 MHz
MW4IC001MR4
Rev 3
VDD
C1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MW4IC001NR4 MW4IC001MR4
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 2170 MHz
2170
32
IRL
Gps
IMD
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus
Frequency
VDD = 28 Vdc
Pout = 0.9 W (PEP)
IDQ = 12 mA
Two−Tone Measurement,
100 kHz Tone Spacing
27
22
17
12
216021502140213021202110
−28
−13
−18
−23
−33
ηD
0.1
60
Gps
Pout, OUTPUT POWER (WATTS) PEP
Figure 18. CW Performance versus Output
Power
Gps, POWER GAIN (dB)
VDD = 28 Vdc
IDQ = 12mA
f = 2170 MHz
50
40
30
20
10
0
13.8
13.4
13.0
12.6
12.2
11.8
11.4
0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.2 1.3 1.4 1.50.9 1
−20
0.01
Pout, OUTPUT POWER (WATTS) PEP
Figure 19. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−25
−30
−35
−40
−45
−50
0.1
IDQ = 7.2 mA
12 mA
VDD = 28 Vdc
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
20 mA
9.6 mA
16 mA
−20
Pout, OUTPUT POWER (WATTS) PEP
Figure 20. Intermodulation Distortion
Products versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
VDD = 28 Vdc, IDQ = 12 mA,
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
5th Order
3rd Order
7th Order
−25
−35
−30
−45
−40
−50
−55
−60
−65
−70 0.01 0.1 1 1
−20
0.01
1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 21. Third Order Intermodulation
Distortion versus Output Power
100 kHz
10 MHz
VDD = 28 Vdc
IDQ = 12 mA
f1 = 2170 MHz
f2 = f1 + Tone Spacing
Two−Tone Measurement
−25
−30
−35
−40
−45
0.1
IMD,THIRD ORDER INTERMODULATION (dBc)
INPUT RETURN LOSS (dB)IRL,
INTERMODULATION DISTORTION (dBc)IMD,
P1dB
ηD, DRAIN EFFICIENCY (%)
ηD
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
10
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Figure 22. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
860
865
870
27.853 + j5.908
29.458 + j6.285
28.617 + j6.078
15.492 + j63.669
15.592 + j68.687
15.788 + j69.799
VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP
875
880
885
30.306 + j6.422
32.194 + j6.660
31.223 + j6.567
15.835 + j70.863
15.975 + j71.920
16.094 + j73.091
890 33.228 + j6.656 16.286 + j74.159890
895 34.293 + j6.624 16.344 + j75.236
900 35.424 + j6.508 16.628 + j76.283
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f =860 MHz
Zsource f = 900 MHz
Zload f = 900 MHz
f = 860 MHz
Zo = 50 Ω
MW4IC001NR4 MW4IC001MR4
11
RF Device Data
Freescale Semiconductor
Figure 23. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1920
1930
1940
4.238 + j15.142
4.490 + j15.466
4.322 + j15.362
7.764 + j28.829
8.056 + j29.352
8.436 + j29.727
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP
1950
1960
1970
4.605 + j15.711
4.905 + j16.050
4.752 + j15.904
8.809 + j30.249
9.183 + j30.763
9.598 + j31.213
1980 5.071 + j16.236 10.030 + j31.690
1990 5.262 + j16.446 10.546 + j32.237
2000 5.487 + j16.632 11.054 + j32.726
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource
f = 1920 MHz
Zo = 50 Ω
f = 2000 MHz
f = 1920 MHz
f = 2000 MHz
Zload
f
MHz
Zsource
Ω
Zload
Ω
2100
2110
2120
2.667 + j12.903
2.664 + j13.224
2.671 + j13.070
5.892 + j26.374
6.092 + j26.739
6.281 + j27.094
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP
2130
2140
2150
2.694 + j13.431
2.702 + j13.700
2.703 + j13.511
6.540 + j27.510
6.748 + j27.795
6.996 + j28.182
2160 2.745 + j13.952 7.300 + j28.678
2170 2.754 + j14.026 7.562 + j28.987
2180 2.784 + j14.206 7.862 + j29.411
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource
f = 2180 MHz
f = 2100 MHz
f = 2100 MHz
Zload
f = 2180 MHz
Zo = 50 Ω
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
MW4IC001NR4 MW4IC001MR4
15
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 466- 03
ISSUE C
PLD-1.5
PLASTIC
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.255 0.265 6.48 6.73
B0.225 0.235 5.72 5.97
C0.065 0.072 1.65 1.83
D0.130 0.150 3.30 3.81
E0.021 0.026 0.53 0.66
F0.026 0.044 0.66 1.12
G0.050 0.070 1.27 1.78
H0.045 0.063 1.14 1.60
K0.273 0.285 6.93 7.24
L0.245 0.255 6.22 6.48
N0.230 0.240 5.84 6.10
P0.000 0.008 0.00 0.20
Q0.055 0.063 1.40 1.60
R0.200 0.210 5.08 5.33
S0.006 0.012 0.15 0.31
U0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J0.160 0.180 4.06 4.57
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F
L
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3
4
21
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ZONE V
ZONE W
ZONE X
GS
H
U
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10 DRAFT
P
CE
0.35 (0.89) X 45 5
"
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VIEW Y- Y
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1
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16
RF Device Data
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