STD4N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
■TYPICAL RDS(on) = 0.7 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100 oC
■APPLICATION ORIENTED
CHARACTERIZATION
■THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
■SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
■HIGH SPEED SWITCHING
■UNINTERRUPTIBLE POWER SUPPLY (UPS)
■MOTOR CONTROL, AUDIO AMPLIFIERS
■INDUSTRIAL ACTUATORS
■DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
ST D 4N 25 2 50 V < 1. 1 Ω4 A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain- gate Voltage (RGS = 20 kΩ)250V
V
GS Gate-source Voltage ± 20 V
IDDrain Current (continuous) at Tc = 25 oC4A
I
D
Drain Current (continuous) at Tc = 100 oC2.5A
I
DM(•) Drain C urrent (p ulsed) 16 A
Ptot Total Dissipation at Tc = 25 oC50W
Derating Factor 0.4 W/oC
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulse width limited by safe operating area
1
3
2
IPAK
TO-251
(Suffix "-1")
13
DPAK
TO-252
(Suffix "T4")
1/10
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.5
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1% ) 4A
E
AS Si ngl e Pulse Av alanche Ene rgy
(starti ng Tj = 25 oC, ID = IAR, VDD= 50 V) 20 mJ
EAR R epet itiv e Aval anc he Energ y
(pulse width limited by Tj max, δ < 1% ) 5mJ
I
AR Avalanche Current, Repetitive or Not-Repetitive
(Tc = 10 0 oC, pulse width limited by Tj max, δ < 1% ) 2.5 A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Ma x. Uni t
V(BR)DSS Drain-source
Br eakd own Vo lta ge ID = 25 0 µA VGS = 0 250 V
IDSS Z er o Ga te V ol t ag e
Drain Current (V GS = 0) VDS = Max Rating
VDS = Max Rating x 0.8 Tc = 12 5 oC10
100 µA
µA
IGSS Gate -bo dy Leaka ge
Current (V DS = 0) VGS = ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Ma x. Uni t
VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 234V
R
DS(on) St atic Dra in-s ourc e On
Resistance VGS = 10V ID = 2 A 0.7 1.1 Ω
ID(on) On S t at e Dra in Curre nt VDS > ID(on) x RDS(on)max
VGS = 10 V 4A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Ma x. Uni t
gfs (∗)Forward
Transconductance VDS > ID(on) x RDS(on)max ID = 2 A 1 2.5 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 500
85
15
700
120
30
pF
pF
pF
STD4N25
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Ma x. Uni t
td(on)
trT urn-on Tim e
Rise Time VDD = 125 V ID = 2 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 3)
30
60 45
90 ns
ns
(di/dt)on Turn-on C urrent Slope VDD = 200 V ID = 4 A
RG = 50 Ω VGS = 10 V
(s e e te st c i rc uit, fi g ure 5 )
220 A/µs
Qg
Qgs
Qgd
T ot al Ga te Char ge
Ga te-Sou rce Ch arg e
Gate-Drain Charge
VDD = 20 0 V ID = 4 A VGS = 10 V 20
6
6
30 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Ma x. Uni t
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 200 V ID = 4 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
35
20
60
50
30
90
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Ma x. Uni t
ISD
ISDM(•)So urce-drain Current
Source-drain C urrent
(pulsed)
4
16 A
A
VSD (∗) F or w ard O n V ol t ag e I SD = 4 A VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 4 A di/d t = 100 A /µs
VDD = 10 0 V Tj = 15 0 oC
(see test circuit, figure 5)
160
0.8
10
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD4N25
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD4N25
4/10
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STD4N25
5/10
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
STD4N25
6/10
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For
Resistive Load
STD4N25
7/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
D
A
C2
C
L
A3
L2
L1
1 3
H
= =
B3
B
B6
B2
E
G
A1
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD4N25
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
D
A
C2
C
L
A3
L2
L1
1 3
H
= =
B3
B
B6
B2
E
G
A1
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD4N25
9/10
Inform ation furn ished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no re spons ability for the
co ns eq ue nc e s o f u se o f s uc h in fo r ma tio n n or f or a ny inf r in ge me nt of pa te nt s or o ther r i gh ts o f t hir d pa rti e s w hic h ma y result s fr o m it s use. N o
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes an d replac es all information previously supplied.
SGS-THOMSON Microelectroni cs products ar e not authorized for use as critical components in life support devices or s ystems withou t ex pre s s
written approval of SGS-THOMSON Microelectonics.
© 1996 SGS-T HOMSON Microelectronics - Printed in Italy - All Ri ghts Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
STD4N25
10/10
