BZT52C2V4 - BZT52C75
Taiwan Semiconductor
1 Version: G1804
500mW, 5% Tolerance SMD Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 75V
VZ tolerance selection of ± 5%
Surface mounting device (SMD) type
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Low voltage stabilizers or voltage references
Adapters
On-board DC/DC converter
MECHANICAL DATA
Case: SOD-123F
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 8.85 ± 0.5mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ 2.4-75 V
Test current IZT 5 mA
PD 500 mW
VF at IF=10mA 1 V
TJ Max. 150 °C
Package SOD-123F
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ IF=10mA VF 1 V
Power dissipation PD 500 mW
Junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +150 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 350 °C/W
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
2 Version: G1804
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE TEST
CURRENT
REGULAR
IMPEDANCE
TEST
CURRENT
LEAKAGE
CURRENT
VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
V mA mA µA V
Min. Nom. Max. Max. Max. Max.
BZT52C2V4 2V4Z 2.28 2.40 2.52 5 100 564 1 45 1.0
BZT52C2V7 2V7Z 2.57 2.70 2.84 5 100 564 1 18 1.0
BZT52C3V0 3V0Z 2.85 3.00 3.15 5 100 564 1 9 1.0
BZT52C3V3 3V3Z 3.14 3.30 3.47 5 95 564 1 4.5 1.0
BZT52C3V6 3V6Z 3.42 3.60 3.78 5 90 564 1 4.5 1.0
BZT52C3V9 3V9Z 3.71 3.90 4.10 5 90 564 1 2.7 1.0
BZT52C4V3 4V3Z 4.09 4.30 4.52 5 90 564 1 2.7 1.0
BZT52C4V7 4V7Z 4.47 4.70 4.94 5 80 470 1 2.7 2.0
BZT52C5V1 5V1Z 4.85 5.10 5.36 5 60 451 1 1.8 2.0
BZT52C5V6 5V6Z 5.32 5.60 5.88 5 40 376 1 0.9 2.0
BZT52C6V2 6V2Z 5.89 6.20 6.51 5 10 141 1 2.7 4.0
BZT52C6V8 6V8Z 6.46 6.80 7.14 5 15 75 1 1.8 4.0
BZT52C7V5 7V5Z 7.11 7.50 7.86 5 15 75 1 0.9 5.0
BZT52C8V2 8V2Z 7.79 8.20 8.61 5 15 75 1 0.63 5.0
BZT52C9V1 9V1Z 8.65 9.10 9.56 5 15 94 1 0.45 6.0
BZT52C10 10VZ 9.50 10.00 10.50 5 20 141 1 0.18 7.0
BZT52C11 11VZ 10.45 11.00 11.55 5 20 141 1 0.09 8.0
BZT52C12 12VZ 11.40 12.00 12.60 5 25 141 1 0.09 8.0
BZT52C13 13VZ 12.35 13.00 13.65 5 30 160 1 0.09 8.0
BZT52C15 15VZ 14.25 15.00 15.75 5 30 188 1 0.045 10.5
BZT52C16 16VZ 15.20 16.00 16.80 5 40 188 1 0.045 11.2
BZT52C18 18VZ 17.10 18.00 18.90 5 45 212 1 0.045 12.6
BZT52C20 20VZ 19.00 20.00 21.00 5 55 212 1 0.045 14.0
BZT52C22 22VZ 20.90 22.00 23.10 5 55 235 1 0.045 15.4
BZT52C24 24VZ 22.80 24.00 25.20 5 70 235 1 0.045 16.8
BZT52C27 27VZ 25.65 27.00 28.35 2 80 282 0.5 0.045 18.9
BZT52C30 30VZ 28.50 30.00 31.50 2 80 282 0.5 0.045 21.0
BZT52C33 33VZ 31.35 33.00 34.65 2 80 306 0.5 0.045 23.0
BZT52C36 36VZ 34.20 36.00 37.80 2 90 329 0.5 0.045 25.2
BZT52C39 39VZ 37.05 39.00 40.95 2 130 329 0.5 0.045 27.3
BZT52C43 43VZ 40.85 43.00 45.15 2 150 353 0.5 0.045 30.1
BZT52C47 47VZ 44.65 47.00 49.35 2 170 353 0.5 0.045 33.0
BZT52C51 51VZ 48.45 51.00 53.55 2 180 376 0.5 0.045 35.7
BZT52C56 56VZ 53.20 56.00 58.80 2 200 400 0.5 0.045 39.2
BZT52C62 62VZ 58.90 62.00 65.10 2 215 423 0.5 0.045 43.4
BZT52C68 68VZ 64.60 68.00 71.40 2 240 447 0.5 0.045 47.6
BZT52C75 75VZ 71.25 75.00 78.75 2 255 470 0.5 0.045 52.5
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
3 Version: G1804
Notes:
1. The zener voltage (VZ) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having a rms value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK.
ORDERING INFORMATION
PART NO.
(Note 1)
PACKAGE PACKING
BZT52Cxxx RHG SOD-123F 3K / 7" Reel
BZT52Cxxx RH SOD-123F 3K / 7" Reel
Note:
1. "xxx" defines voltage from 2.4V (BZT52C2V4) to 75V (BZT52C75)
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
4 Version: G1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
Fig. 2 Zener Breakdown Characteristics
Fig. 3 Zener Breakdown Characteristics
Fig.4 Power Dissipation Curve
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
A
=25oC
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8 9 10 11 12
TA=25oC
0.01
0.1
1
10
100
15 25 35 45 55 65 75 85
0
100
200
300
400
500
600
700
0 50 100 150 200
Zener Current (mA)
Forward Voltage (V)
Zener Current (mA)
Zener Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Zener Voltage (V)
Forward Current (mA)
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
5 Version: G1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Capacitance
Fig.6 Effect of Zener Voltage on Impedence
1
10
100
1000
1 10 100
1V Bias
Bias at 50% of
VZ (Nom)
1
10
100
1000
1 10 100
IZ=5mA
IZ=20mA
IZ=1mA
Dynamic Impedence(Ohm)
Zener Voltage (V)
Zener Voltage (V)
Capacitance (pF)
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
6 Version: G1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-123F
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 1.50 1.70 0.059 0.067
B 3.30 3.90 0.130 0.154
C 0.50 0.70 0.020 0.028
D 2.50 2.70 0.098 0.106
E 0.80 1.15 0.031 0.045
F 0.05 0.20 0.002 0.008
DIM. Unit (mm) Unit (inch)
Min Min
C 2.86 0.113
G 1.52 0.060
X 1.34 0.053
X1 4.20 0.165
Y 1.80 0.071
BZT52C2V4 - BZT52C75
Taiwan Semiconductor
7 Version: G1804
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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