Numerical Index 2N3374~-2N3475 ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS z= || REPLACE- | PAGE Pp, [El ty | Veg | Vee |= tre @ Ie Veeisan @ Ie SB) 4 |2 NRE FE) } ment | NumBer| USE = B| 2 | w/Bl ~2lB =o @ 25C | SB) C | (volts) | (volts) |S | (min) (max) 3} (volts) = 3 5|3 2N3374 |S] N HPA | 5.0W | C | 200 80 80/0] 10 0.17A 0.31} 0,15A 230M )T 2N3375 |S|N 9-74 | HPA | 11.6W | Cc | 200 65 40/0] 10] 100] 0.25A 1.0} 0.254 400M | T Field Effect Transistors, see Table on Page 1-166 S|N MSS | 0.6W|A ]175 125 100 |} 0} 60 2.5M 1.0] 2.5M 36M | T S|N MSS | 0.6W}]A1/175 195 160 |] 0} 60 7.0M 1.0] 7.0M 36M | T S| N | MPS6521 | 5-109] AFC] O.2W]A1]125 25 25 {0 |400 | 800 | 2.0M 400 | E Sj]N |MPS6515 | 5-109] AFC] O.2W]A | 125 25 25 }0|250| 500] 2.0M 250 | E S| N|MPS6520 | 5-109) AFC} 0.2W]A | 125 25 2510 4250) 500] 2.0M 250 | E S| N | MPS3392 | 5-86 | AFC] 0O.2W]A | 125 25 25 |0 }150| 300] 2.0M 150 | E S|N | MPS3393 | 5=86 | AFC | O.2W}A | 125 25 25|0{ 90| 180] 2.0M 90 | E 2N3394 |S} N]MPS3394 | 5-86 | AFC] 0.2W|A | 125 25 25|0]| 55|]110] 2.0M 55 |E 2N3395 | S| N|MPS3395 | 5+86 | AFC] 0.2W] A | 125 25 25 |0]150| 500] 2.0M 150 | E 2N3396 S$} N ) MPS3396 5-86 AFC 0.2W} A) 125 25 25,0 99 ) 500 2.0M 90) E 2N3397 |S} N | MPS3397 | 5-86 | AFC] 0.2W| A | 125 25 25|0] 55|500] 2.0M 55 ]E 2N3398 | S| N|MPS3398 | 5-86 | AFC] 0.2W] A | 125 25 25/0] 55] 800] 2.0M 55 |E 2N3399 |G|P RFC 80M | A | 100 20 10 1.5M 400M | T 2N3400 | G|P HSS | 0.15w | Aj 100 20 20 | 0] 50] 300 10M } 0.15 10M 150M | T 2N3401 | S| P CHP | 0.25W | A j 150 25 25 | 0 0.25] 5.0M| 4.0]E | 0.1M|B 2N3402 S|] N | MPS6513 5-109] AFC | 0.56W1 A |] 150 25 2510 75 | 225 2.0M 0.3 50M 75 ,E 2N3403 {S| NJ] MPS6515 | 5-109] AFC] 0.56W | A | 150 25 2510 |180]540| 2.0M 0.3 50M] 180) E 2N3404 Sy N AFC | 0.56W {A} 150 50 50} 0 75 | 225 2.0M 0.3 50M 75,5 2N3405 SUN AFC | 0.56W | A | 150 50 50 | 0 | 180 | 540 2,0M 0.3 50M 100 | E 2N3406 | Unijunction Transistor, see Table on Page 1-174 2N3407 | S|N RFA| 0.2W|A | 200 35 18} Oj} 10] 100 10M 10 | E | 300M | T 2N3408 | S| P RFA | 4.0W | A } 200 40 25]|0] 10] 100 40M 10 | E | 200M | T 2N3409 S,N 11-33] DFA O.5W] A | 200 60 30] 0 30 | 120 O.1M 0.15 10M 250M | T 2N3410 S|N 11+33] DFA O.5W}] A | 200 60 30] 0 20 | 100 10* 0.15 LOM 250M | T 2N3411 | S}N 11-33] DFA} 0.5W] A | 200 60 30] 0} 20) 100 1o* | 0.15 10M 250M | T 2N3412 |G] P AFA 60M | A | 100 20 20] s | 30 | 200 10M 0.2 10M 25]/E | 100M/T 2N3413 | S| P AFA| 0.4W]A]200} 150] 150]/0] 10} 45 50M 1.2] O.1A 0.25M|T 2N3414 s| N | MPS6513 5-109] AFC | 0.36W | A | 160 25 2510 75 | 225 2,0M 0.3 50M 75 |E 2N3415 S| N | Mps6515 5-109| AFC | 0.36W | A | 160 25 25 | O | 180 | 540 2.0M 0.3 50M 180] E 2N3416 {S| N{MPS6515 | 5-109| AFC | 0.36W] A | 160 50 50/0] 75 | 225} 2.0M 0.3 50M 75|E 2N3417 | S| N|MPS6515 | 5-109] AFC] 0.36Wj A | 160 50 50] 0 |180{| 540] 2.0M 0.3 50M | 100] E 2N3418 S|N PMS 0.8W 1A | 175 85 60; 0 20 60 1.0A 0.25 1.0A 40M | T 2N3419 S|N PMS 0.8W} A 4175 125 80]; 0 20 60 1.0A 0.25 1.0A 40M | T 2N3420 S|N PMS 0.8W}Al175 85 60} 0 40 | 120 1.0A 0.25 1.0A 40M | T 2N3421 SiN PMS 0.8W | A175 125 80] 0 40] 120 1.0A 0.25 1.0A 40M] T 2N3422 Thyristor, see Table on Page 1-154 2N3423 | STN 11+35| DFA] 0.3W|A | 200 30 15] 0] 20} 200] 3.0M 0.4 10M 600M | T 2N3424 |S} N 11-35| DFA| 0.3W | A | 200 30 15 | O} 20] 200] 3.0M 0.4 10M 600M | T 2N3425 S|N 11-35] HPA 0.3W] A | 200 40 15 |) 0 30 | 120 10M 0.4 10M 20)E 300M | T 2N3426 | S|N HSS; 0.6W| A | 200 25 12] 0} 30] 120] O.3A| 0.33] 0.3A 450M | T 2N3427 G| P 6-41 AFA 0.2W] A] 100 45 30], R | 100 | 350 O.1A 0.2 O,1A 200 |)E 4.0M|T 2N3428 | G| P 6-41 | AFA] 0.2W] A | 100 45 30}R]150] 400} O.1A] 0.19] O.1A] 350] E} 5,0M|T 2N3429 | S| N | 2N3713 7+125| PMS | 150W] C | 175 50 50}0 | LO] 35} 5.0A 1.0] 5.0A 20K { E 2N3430 | S| N | 2N3714 7-125] PMS| 150W]C]175] 100} 100;}0]/ 10] 35] 5.0A 1.0] 5.0A 20K | E 2N3431 S|N PMS 150W | Cc | 175 150 150] 0 10 35 5.0A 1.0 5.0A 20K | E 2N3432 | S| N PMS} 150Ww/]C]175] 200} 200/0] 10} 35] 5.0A 1.0, 5.04 20K] E 2N3433 | S| N PMS} 150W/]C}]175] 250] 250/00] 10/ 35] 5.0A 1.0{ 5.0A 20K | E 2N3434 | S| N PMS} 150W/]C]175 | 300] 3000/0] 10] 35] 5.0A 1.0} 5.0A 2N3435 |S] N HPA] 1.0W] A | 200 80 60] 0] 50] 200 10M 140M | T 2N3436 naa Field Effect Transistors, see Table on Page 1-166 2N 2N3439 1 S| Nj MJ3201 7-200) VID] 1.0W]A]200] 450; 350}0] 40] 160 20M 25 ,E 15M{T 2N3440 |S] N | MJ3202 7+200| VID| 1.0W} A200] 300] 250} 0] 40] 160 20M 25 |E 15M1T 2N3441 |S] N | 2N3738 7-133 | LPA 25W}c] 200] 160 | 140|0;, 20| 80] 0.54 6.0] 2.7A 15 [E | 0.2m] T 2N3442 | S|N LPA| 100W/]C] 200] 160] 140]}0] 20] 70] 3.0A 5.0 LOA 12 | E 80K | T 2N3443 |G} P RFA} 0.3W| A | 100 20 15 | O]} 20] 150 10M 20|E | 750M) T 2N3444 |S] N 8-214) HSS| 1.0W | A | 200 80 50]O} 20) 60] O.5A] 0.35] 0,15A 150M | T 2N3445 | S/N 7-111] LPA| 115W] c | 200 80 60; 0} 20] 60] 3.0A 1.5] 3.0A 20] E 10M | T 2N3446 S| N 7111] LPA LL5W | C | 200 100 80;,0 20 60 3.0A 1.5 3.04 20|E 10M | T 2N3447 Ss) WN 7-111) LPA 11i5w } c } 200 80 6070 40 | 120 5.0A 1.5 5.0A 40) E 10M) T 2N3448 | S| N 7-111] LPA] 115w]c}] 200] 100 80] 0] 40] 120] 5.0A 1.5] 5.0A 40] E 10M | T 2N3449 G| P HSS 150M | A | 100 15 6.010 20 LOM 0.2 2.0M 300M | T 2N3450 S]N HSS 0.6W | A } 200 120 60] 90 40 | 120] 0.15A 0.5 | O.15A 100M | T ouates SIP HSS 0.3W } A { 200 6.0 6.0] 0 30 | 120 10M 0.16 10M 500M | T 2N34. thru Field Effect Transistors, see Table on Page 1-166 2N3460 2N3461 G| P LPA 5.0W jc | 110 60 30) 0 90 } 150 O.5A 0.4 1.0A 40] E 10K/ E 2N3462 |S|N LNA{ 0.3W] A | 200 50 35 | O | 100 | 300 1o* | 0.35) 5.0M] 150] E 10M | T 2N3463 S!N LNA Q.3W) A | 200 60 4510 | 120 | 360 10* 9.35 1.0m 0] E 45M/T 2N3464 S| N HPA 5.0W |] C | 200 60 40/0 35 | 100 0.24 1.0 0.2A 30) E 50M | T pnatee Field Effect Transistors, see Table on Page 1-166 2N3467 S| P 8-225] HSS 1.0W | A | 200 40 40/0 40 | 120 Q.5A 0.3] O.15A 175M| T 2N3468 | S| P 8-225] HSS} 1.,0W} A | 200 50 50;O} 25] 75] O.5A] 0.35] 0.154 150M | T 2N3469 | S|N HPA | 1.25W} A | 200 35 25 | 0] 100] 350] 0.54 0.5] 1.0A] 100] E 20M | T 2N3470 | S| N LPA| 150W| Cc} 150 50 50} 0] 100] 500} 9.0A 3.5] 9.0A 50, E} 7.0K/E 2N3471 S| N LPA 150W | c | 150 100 100 7 O | 100 } 500 9.0A 3.5 9.0A 50, E 7.0K, E 2N3472 |S|N LPA{ 150W]C}150}] 150] 150] 0] 100| 500; 9.0A 3.5] 9.0A 50] E|] 7.0K] E 2N3473 | S| N LPA{ 150W{C}]150] 200] 200; 0]100/ 500] 9.0A 3.5] 9.0A 50] E] 7.0K] E 2N3474 | S|} N LPA} 150W] C} 150 50 50] 0] 700] 10K} 4.04 3.5] 9.0A] 100] E} 4.0K] E 2N3475 | S1N LPA] 150W]C}] 150} 100 { 100] 0} 700] 10K] 4.0A 3.5] 9.0A{ 100/E]| 4.0K] E 1-139KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors INGLOZ , 2NSLIG (SILICON) (JAN2N3253 AVAILABLE) 2N3444 CASE 31 (TO-5) MAXIMUM RATINGS Collector connected to case Vero = 30-50 V Io =I1A f; = 175-200 MHz NPN silicon annular transistors for high-current saturated switching and core driver applications. Rating Symbol | 2N3252 |2N3253|2N3444} Unit Colector-Base Voltage Vop 60 vi) 80 Vde Collector-Emitter Voltage VCEO 30 40 50 Vde Emitter-Base Voltage Veg ____ 56 Vde Total Device Dissipation Pp 25C Case Temperature <5 Watts Derate above 25C _ 28.6_ mWw/C Total Device Dissipation Pp 25C Ambient Temperature DOO Watt Derate above 25C a SOOO mW/C Junction Operating Temperature Range Ty _ -65 to +200 _> C Storage Temperature Range Tote ~ - 65 to +200 _> C 93c 35 C/W Thermal Resistance: 934 0.175 C/mw SWITCHING CHARACTERISTICS Characteristic Symbol] Min | Max { Unit Output Capacitance Cop pF (Voz = 10 Vde, Ig = 0,f = 100 kHz) _ 12 Input Capacitance Ciy pF (Vpp = 0.5 Vde, Ip = 0, f = 100 kHz) _ 80 Current Gain-Bandwidth Product fp MHz (Ig = 50 mAdc, Ver = 10 Vdc, f = 100 MHz) 2N3252 200 _ 2N3253, 2N3444 175 Total Control Charge Qr nc (Ig = 500 mAde, Iq, = 50 mAdc, Voc = 30 V) _ 5 Delay Time Ig = 500 mAdc, ly = 50 mAdc tg _ 15 ns Rise Time Voc = 30 V, V; = 2V 2N3252 t _ 30 ns ce BE 2N3253, 2N3444 x 35 Storage Time I, = 500 mAdc, Ip1 = Ino = 50 mAdc ts _ 40 ns Fall Time Voc = 30V te _- 30 ns 8-214 Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) ELECTRICAL CHARACTERISTICS (At 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector Cutoff Current logo Adc (Vop= 40 Vde, Ip = 0) 2N3252 _ 0.50 (Vop= 40 Vdc, Iz = 0, Ty = 100C) 2N3252 75.0 (VcB = 60 Vdc, Ip = 0) 2N3253, 2N3444 0.50 (Vop= 60 Vde, Ip = 0, Ty, = 100C) 2N3253, 2N3444 75.0 Emitter Cutoff Current leBo uAdc (VBr = 4 Vdc, I = 0) _ 0.05 Collector Cutoff Current Icrx Adc (Voge = 40 Vde, Vapiogy= 4 Vdc) 2N3252 _ 0.5 (Veg = 60 Vdc, Veep(otf)= 4 Vdc) 2N3253, 2N3444, _ 0.5 Base Cutoff Current Ipp MAdc (Vog = 40 Vde, Venn) = 4 Vac) 2N3252 0.50 (Vog = 60 Vde, VEeR(off) 4 Vdc) 2N3253, 2N3444 _ 0.50 Collector-Base Breakdown Voltage BVcpo Vde (ic = 10 Adc, Ip = 0) 2N3252 60 _ 2N3253 1 _ 2N3444 80 _ Collector-Emitter Breakdown Voltage * BVoro* Vde (ie = 10 mAdc, pulsed, Ip = 0) 2N3252 30 _ 2N3253 40 _ 2N3444 50 Emitter-Base Breakdown Voltage BV Bo Vde (Ig = 10 wAdc, Ic = 0) 5 _ Colector Saturation Voltage * Ver ( sat) Vde (Ig = 150 mAdc, Ip = 15 mAdc) 2N3252 _ 0.3 2N3253, 2N3444 _ 0.35 (Ig = 500 mAdc, Ip = 50 mAdc) 2N3252 _ 0.5 2N3253, 2N3444 _ 0.60 (Ig = 1.0 Adc, Ig = 100 mAdc) 2N3252 _ 1.0 2N3253, 2N3444 _ 1.2 Base-Emitter Saturation Voltage * VEE (sat)* Vdc (I = 150 mAdc, Ip = 15 mAdc) _ 1.0 Ie = 500 mAdc, Ip = 50 mAdc) 0.7 1.3 (ig = 1.0 Adc, Ip = 100 mAdc) _ 1.8 DC Forward Current Transfer Ratio * hpp* _ (Ic = 150 mAde, Vopr?) Vdc) 2N3252 30 _ 2N3253 25 _ 2N3444 20 _ (Ic = 500 mAdc, Vor = 1 Vde) 2N3252 30 90 2N5253 25 15 2N3444 20 60 (ig = 1 Ade, Veg = 5 Vde) 2N3252 25 _ 2N3253 20 _ 2N3444 15 _ * Pulse Test: Pulse width = 300 ws, duty cycle = 2% 8-215 Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) COLLECTOR SATURATION VOLTAGE CHARACTERISTICS 2N3252 T, = 25C Ie = 100 mA le = 500 mA le = 750 mA MAXIMUM COLLECTOR SATURATION VOLTAGE (VOLTS) Vee 2 3 4 5 6 7 8 9 10 15 20 30 40 50 60 70 80 90 100 150 200 Ip, BASE CURRENT (mA) 2N3253 T, = 25C te = 100 mA ic = 250 mA le = 500 mA te = 750 mA MUM COLLECTOR SATURATION VOLTAGE (VOLTS) Voce, MAXI 2 3 4 5 6 7 8 9 10 15 20 30 40 50 60 70 8090100 150.200 I, BASE CURRENT (mA} 2N3444 T, = 25C Io = 100 mA fo = 250 mA Ic = 500 mA. te = 750 mA CTOR SATURATION VOLTAGE (VOLTS) Vee, MAXIMUM COLLE 2 3 4 5 6 7 8 9 10 15 20 30 40 50 60 70 80 90100 150200 Ia, BASE CURRENT (mA) 8-216t,, STORAGE TIME (ns) Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) MINIMUM CURRENT GAIN CHARACTERISTICS 700 800 900 1000 2N3253 VQ SV 70 T, = 125C 50 Ty = 26C z = 30 a T, = ~-15C & g = 20 Ty = 55C 3 = 5 = = = 2 10 i=l 7 5 50 60 70 80 90 100 200 300 400 500 600 Ig, COLLECTOR CURRENT (mA) = = oO =z a 2 & s 3 = =] = z = & 50 60 70 80 690 (100 200 300 400 500 600 tc, COLLECTOR CURRENT (mA) Ty = 125C Ty = 25C Ty = ~15C T, = 55C Hee, MINIMUM CURRENT GAIN 50 60 70 80 390 100 400 500 600 200 306 Ie, COLLECTOR CURRENT (mA) TYPICAL STORAGE TIME VARIATIONS 100 100 pr = 20 70 70 50 560 Zz a = 30 5 30 fr = 10 = i, = 1 a 20 feat, 1/8t, 20 eee 2568 125C 10 10 50 70 100 200 300 500 700 1000 60 70 100 200 300 te, COLLECTOR CURRENT (mA) 8-217 ~ ea Ve = 2V 700 800 900 1000 700 800 900 1000 TYPICAL FALL TIME VARIATIONS ta = tee Veo = 30 V 25C T. 125C T, 500 700 1000 Ic, COLLECTOR CURRENT (mA) Switching and General Purpose Transistors 2N3252, 2N3253, 2N3444 (continued) TIME (nsec) CAPACITANCE (pF) SATURATION VOLTAGE (VOLTS) TYPICAL TURN-ON TIME VARIATIONS WITH VOLTAGE TYPICAL RISE TIME VARIATIONS WITH TEMPERATURE Br = 10 T, = 26C Veo = 30V fe = 10 25C owe oe 125C t,, RISE TIME (nsec) =O0V ta@ Ve = 2V 50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000 ley COLLECTOR CURRENT (mA) Je, COLLECTOR CURRENT (mA) JUNCTION CAPACITANCE VARIATIONS MAXIMUM CHARGE DATA 10,000 Ty = 25C Vec == 30 V MAX 7000 le = 10 In -= TYP Ty = 25C 5000 3000 nn S 2 So 2N3252 CHARGE (pC} 1000 700 500 300 200 0.1 0.2 05 1.0 2.0 5.0 10 20 50 50 70 ~=:100 200 300 500 700 1000 REVERSE BIAS (VOLTS) le, COLLECTOR CURRENT (mA) LIMITS OF SATURATION VOLTAGES TYPICAL TEMPERATURE COEFFICIENTS Be = 10 5 Ty = 25C 25C T0 Ova for Veg 55C TO 25C MAX Ve (ret) MIN Vee sat) COEFFICIENT (m/C) MAX Vee (ut) 2N3253-2N3444 Oya for Veg MAX Vce taat} 50 70 100 200 300 500 700 1000 Qo 200 400 600 800 1000 Je, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (mA) 8-218