ib OL DEW 3875081 oO17424 1 Tr 3875081 G E SOLID STATE O1E 17424 DT-s3"// - P Transist . General-Purpose Power Transistors To 22-14 2 '2N6121-2N6123, 2N6124-2N6126 File Number 1149 Epitaxial-Base, Silicon TERMINAL DESIGNATIONS N-P-N and P-N-P : VERSAWATT Transistors eel) b=. General-Purpose Medium-Power Types for O > Switching and Amplifier Applications ata r 2 Features: 92Cs-20960 Low saturation voltages @ Complementary n-p-n and p-n-p types . JEDEC TO-220AB s Maximum safe-area-of-operation curves specified for dc operation t The RCA-2N6121, 2N6122, and 2N6123 are epitaxial-base n-p-n transistors. The 2N6124, 2N6125, and 2N6126 are epitaxial-base p-n-p transistors. They are complements to 2N6121, 2N6122, and 2N6123, respectively. All typas utilize the JEDEC TO-220AB (VERSAWATT) plas- tic package. All these transistors are intended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. MAXIMUM RATINGS, Absolute-Maximum Values: N-P-N 2N6121 2N6122 2N6123 P-N-P 2N6124 2N6125 2N6126 *Voao 45 60 80 Vv "Voeo(SUS) oo. seus Deeb ene eeeeeneeeeeenes 45 60 80 v E80 . +e 5 Vv Ve ceseee 4 A "Ta cece rec cee ere e eset an teehee sees eee eer neserteern 1 A Py Te OBS Lice ccc rte cece tee eee ener ee eter eee eege 40 Ww Te > 25C 100C 16 w To > 28 Loc ccc sete cence eect tenes Derate linearly 0.32 wc Ty 25S crccccccsvcce rev rensseeeerne 1.8 Ww TaD 25S vscccereuceterestecrseeseteseeene Veteeenanee Derate linearly 0.0144 WC "Tyign Ty srteceseerecerenre Cree ee een ene e eee e ene ennenne ___. -65 to 160 __ C Ty At distances = 1/8 in. (3.17 mm) from Gase for 10S MAX. wissee cece sees ween en sents necens 235 C *In accordance with JEDEC registration data. For p-n-p devices, voltage and current values are negative. 428 0967 F-10 ae ; Ol DE 3875081 Oo174a5 3 i 7 ' 3875081 GE SOLID STATE -O1E 17425. oD T= S371] General-Purpose Power Transistors 2N6121-2N6123, 2N6124- 25 ELECTRICAL CHARACTERISTICS At Case Temperature {To} = 25C t- 45 Unless Otherwise Specified TEST CONDITIONS LIMITS VOLTAGEICURRENT] 2N6121 2N6122 2N6123 i CHARAC- V de Adc | 2N6124 2N6125 2N6126 |UNITS TERISTIC VcelVeel tc | tg |MIN] MAX.) MIN] MAX. MIN] MAX. 45a - 0.1 - - - - IcBo 60a - ~ - 0.1 -ft- 804 - - = ~ - 0.1 * Icex 45 |-1.5 . - 0.1 - - _ - 60 j-1.5 ~ - - 0.1 - - 80 |-1.5 - - ~~ - - 0.1 mA 45 |-1.5 - 2 - ~ - - Te = 125C 60 |-1.5 - - - 2 - ~ 80 |-1.5 - - - - - 2 * \cEO 45 0 - 1 - - - - 60 0 - - - 1 - - 80 0 - - _ - - 1 * lEpo0 5| 0 ~ 1 _ 1 - 1 * 1 VcEQ (sus)b oi}o j45 |- |eo} | eo} v * hFE 2 1,5 25 100 25 100 20 80 4c 10 - 10 - 7 ~ *\Vee 2 1.5 -j} 12] -| 12] - | 12 y Veelsat) 1.5 10.15 | 0.6 - 0.6 - 0.6 4c P| - 1.4 ~ 1.4 - 1.4 * Ihgel (f=1 MHz) 4 1 2.5 - 2.5 - 2.5 ~- * te (f=1 kHz) 2 0.1 25 _ 25 - 25 - Rec 43.125 13.125 8.125 |C/W * In accordance with JEDEC registration data. Vog value. b CAUTION: The sustaining voltage Vegolsus) Pulsed: Pulse duration = 300 us, duty factor = 0.018. MUST NOT be measured on a curve tracer. *For p-n-p devices, voltage and current values are negative, TO-EMITTER VOLTAGE (Vcels 44 26425 | bv & 2 a 5 Ps a z < e 5 7] x 3 a 1 rs} i a 3 "oe 2 so TS (oo 125 0 WSs 200 ool or t 1 CASE TEMPERATURE (tgh ee e2ce-reses COLLECTOR CURRENT (Tc}A gacs-isccent Fig, | Current derating curves for ail types. Fig. 2 Typical dc beta characteristics for all types. 429 aoe Le OL DEW 3875081 O0174e2b 5 Ef 3875081 GE SOLID STATE O1E 17426 DBD J-s3-/] General-Purpose Power Transistors . , T- DBB-19 2N6121-2N6123, 2N6124-2N6126 | CASE TEMPERATURE (To) 26 (CURVES MUST BE DERATED ] LINEARLY WITH INCREASE IN TEMPERATUR 4 ii HH ry a E fy i H > : S H . 4 A & H & a 3 F = i FE i w 3 H 6 Fi u 6 Hy e i 4 Te # af Voeo (MAX) 45 (2N6t21, 2NBIZ4 Vceo (MAX.)= 6OV{2NG122,2NGI2S Vegg (MAX) = 80 V{ 2N8123,2NEIZ6 0. /S2Reeee py t 2 + 6 og 2 46 8g 2 4 68 COLLECTOR -TO- EMITTER VOLTAGE (Vcg)- 926M- 31100 / Fig. 3 Maximum operating ereas for all types. COLLEGTOR- 10 -EMITTER VOLTAGE (Vcpi+4 COLLECTOA-TO-EMITTER VOLTAGE (Vce)*4 < 3 l L Ww 5 = & 5 g z 3 8 e w 3 : e a 8 1 as 1 LS 2 12 La 16 BASE-TO- EMITTER VOLTAGE {Vgpi BASE -TO-EMITTER VOLTAGE (Ygt -_v 92CS-2253t 9205-32535 Fig. 4 Typical input characteristics for all types. Fig. Typical transfer characteristics for all types. Nectrev 5w COLLEC TOA-TO-EMITTER VOLTAGE IWcEl# 4 Boa | CASE TEMPERATURE IT1s25C 25m z JW MILLER Ko 4533, ? OR EQUIVALENT = gare kb ! vi 3 63v ft 10, 1%, 172 0 8 60H 5 {NON -INDUCTIVEY . L~--|- OSCILLOSCOPE 5 CHOPPER TYPE i Peers crv _PuOBELNG OB, z CLARE 1028.08 WuoER Of EQUIVALENT : EQUIVALENT a COLLECTOR CURRENT {Icl-A e2e8- 19674 -vec ROTE: FOR p-a-p TYPES,REVERSE POLARITY OF Vcc* $28-3s102 . Fig. 7 Cireutt used to measure sustaining voltage q Fig. 6 ~ Typical gain-bandwidth product. Vegolsus) for all types. 430 . oe 09 9 F-12 ms