APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches 2 - FEATURES AND BENEFITS DESCRIPTION * * * * * The APS11700 and APS11760 families of micropower Halleffect switches are AEC-Q100 qualified for 24 V automotive applications and compliant with ISO 26262:2011 ASIL A. These sensors are temperature-stable and suited for operation over extended junction temperature ranges up to 165C. * * * * Ultralow power consumption ASIL A functional safety compliance Planar and vertical Hall-effect sensor ICs 3.3 to 24 V operation Automotive-grade ruggedness and fault tolerance Extended AEC-Q100 qualification Internal protection circuits enable 40 V load dump compliance Reverse-battery protection Output short-circuit and overvoltage protection Operation from -40C to 165C junction temperature High EMC immunity Omnipolar and unipolar switch threshold options Choice of output polarity Open-drain output Solid-state reliability PACKAGES Not to scale 3-pin SIP (suffix UA) 3-pin SOT23W (suffix LH) This family of Hall-effect switches features a micropower regulator that draws as little as 6 A of current. The micropower regulator of these devices are designed for harsh automotive and industrial environments and features on-board overvoltage and reverse connection protection. The APS11700 and APS11760 are especially suited for direct battery connection for automotive and industrial applications up to 24 V. Continued on next page... TYPICAL APPLICATIONS * * * * * * * * * Reed switch replacement Gear shift selectors and driver controls (PRNDL) Open/close sensor for LCD screens/doors/lids/trunks Clutch/brake position sensor Lighting actuation slave sensor Wiper home/end position sensor End of travel and index sensors Industrial controls White goods VCC POK Regulator Dynamic Offset Cancellation Clock / Micropower Logic To All Subcircuits Low-Pass Filter Hall Amp. Schmitt Trigger Sample, Hold & Averaging VOUT Output Control Current Limit GND Figure 1: Functional Block Diagram APS11700-DS, Rev. 2 MCO-0000522 February 11, 2019 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches DESCRIPTION (continued) The APS11700 and APS11760 families are available in several different magnetic sensitivities and polarities to offer flexible options for system design. They are available in active high and active low variants for ease of integration into electronic subsystems. The APS11700 features a Hall-effect element that is sensitive to magnetic flux perpendicular to the face of the IC package. The APS11760 features a vertical Hall-effect sensing element sensitive to magnetic flux parallel to the face of the IC package. The devices include on-board protection for operation directly from an automobile battery, as well as protection from shorts to ground by limiting the output current until the short is removed. The device is especially suited for operation from unregulated supplies. Two package styles provide a choice of through-hole or surface mounting. Package type LH is a modified 3-pin SOT23W surfacemount package, while package type UA is a 3-pin ultramini SIP for through-hole mounting. Both packages are lead (Pb) free, with 100% matte-tin-plated leadframes. Complete Part Number Format Allegro Idenfier (Device Family) APS - Digital Posion Sensor Configuraon Opons Planar Vercal APS 11700 APS 11760 LLHALT-0SL Device Sensing Configuraon 11700 - Perpendicular to package face, "Z" 11760 - Parallel with package face, "X" 12 V Average ICC and Micropower Period Blank - 6 A, 160 ms (typ.) 1 - 33 A, 6.8 ms (typ.) * 2 - 110 A, 1.4 ms (typ.) * Output Polarity for B > BOP H - High (Output Off) L - Low (Output On) E.g. APS11700LLHAXX-XXXX APS11700LLHALT - 0 SL RoHS COMPLIANT *Contact Allegro for availability. Operang Mode S - Unipolar South Sensing P - Omnipolar (North and South) Sensing N - Unipolar North Sensing * Device Switch Threshold Magnitude 0 - 40 G BOP, 22.5 G BRP (typ.) 1 - 95 G BOP, 70 G BRP (typ.) * 2 - 150 G BOP, 125 G BRP (typ.) * 3 - 280 G BOP, 225 G BRP (typ.) * Instrucons (Packing) BU - Bulk, 500 pieces/bag (UA Only) LT - 7-in. reel, 3,000 pieces/reel (LH Only) LX - 13-in. reel, 10,000 pieces/reel (LH Only) TN - 7-in . reel, 4,000 pieces /reel (UA Only) Package Designaon LHA - 3-pin SOT23W Surface Mount UAA - 3-pin SIP Through-Hole Ambient Operang Temperature Range L - -40C to +150C Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 2 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches SELECTION GUIDE Part Number [1] Packing [2] Mounting APS11700LLHALT-0SL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount APS11700LLHALX-0SL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount APS11700LUAA-0SL Bulk, 500 pieces/bag 3-pin SIP through-hole APS11700LLHALT-0PL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount APS11700LLHALX-0PL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount APS11700LUAA-0PL Bulk, 500 pieces/bag 3-pin SIP through-hole APS11760LLHALT-0SL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount APS11760LLHALX-0SL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount APS11760LUAA-0SL Bulk, 500 pieces/bag 3-pin SIP through-hole APS11760LLHALT-0PL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount APS11760LLHALX-0PL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount APS11760LUAA-0PL Bulk, 500 pieces/bag 3-pin SIP through-hole [1] Contact Allegro [2] Contact Allegro Sensing Orientation Average Supply Current (A) Operating Mode Typical Operate Point (G) Z-Axis 6 Unipolar South 40 Z-Axis 6 Omnipolar 40 6 Unipolar South 40 6 Omnipolar 40 X-Axis Y-Axis X-Axis Y-Axis MicroSystems for options not listed in the selection guide. MicroSystems for additional packing options. Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 3 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches ABSOLUTE MAXIMUM RATINGS Characteristic Supply Voltage [1] Symbol Notes Rating Units VCC 40 V Reverse Supply Voltage [1] VRCC -18 V Output Voltage [1] VOUT -0.3 to 32 V Output Current [2] IOUT 40 mA Reverse Output Current IROUT -50 mA Magnetic Flux Density [3] B Unlimited G Operating Ambient Temperature TA -40 to 150 C Maximum Junction Temperature TJ(max) 165 C Tstg -65 to 170 C Storage Temperature Range L [1] This rating does not apply to extremely short voltage transients. Transient events such as Load Dump and/or ESD have individual, specific ratings. short-circuit current limiting device. [3] Guaranteed by design. [2] Through ESD PERFORMANCE [4] Characteristic ESD Voltage [4] ESD Symbol VESD(HBM) Notes Human Body Model according to AEC-Q100-002 Rating Units 11 kV ratings provided are based on qualification per AEC-Q100 as an expected level of ESD robustness. Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 4 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches PINOUT DIAGRAMS AND TERMINAL LIST GND (View from branded face) 1 VOUT VCC 2 3 VOUT 2 GND 1 VCC 3 3-pin SIP (suffix UA) 3-pin SOT23W (suffix LH) Terminal List Name VCC Description Number LH UA Connects power supply to chip 1 1 VOUT Output from circuit 2 3 GND Terminal for ground connection 3 2 Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 5 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches ELECTRICAL CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 F, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit SUPPLY AND STARTUP Supply Voltage Supply Current [2][3] VCC 3.3 - 24 V ICC(AVG)25C VCC = 12 V, TA = 25C, Output Off - 6 - A ICC(AVG)85C VCC = 12 V, TA = -40C to 85C, Output Off 2 6 15 A ICC(AVG)150C TA = 150C, Output Off 2 11.3 40 A ICC(EN) ICC(DIS) Power-On Time [4] Power-On State [5] Undervoltage Lockout [6] UVLO Reset Time [6] tPO POS APS11700 Device in awake mode 1 2.2 4 mA APS11760 Device in awake mode 1 2.5 5 mA Device in sleep mode 2 - 35 A VCC VCC(min) - 180 350 s VCC VCC(min), t < tPO High - VCC(UV)EN Enable, valid during tAWAKE only; VCC VCC(min) VCC < VCC(min) 1.9 2.25 - V VCC(UV)DIS Release, valid during tAWAKE only; VCC < VCC(min) VCC VCC(min) - 2.5 3 V - 100 - s tPOR MICROPOWER OPERATION (See Figure 4) Period tPERIOD - 160 220 ms Awake tAWAKE - 50 - s Sleep tSLEEP - 159.95 - ms - 0.03 - % Micropower Operation Duty Cycle tPERIOD - tAWAKE DCt [1] Typical data is at TA = 25C and VCC = 12 V unless otherwise noted. current measured for one micropower period, tAWAKE + tSLEEP. [3] Average supply current up to T = 85C, I A CC(AVG)85C, is guaranteed by device design and characterization. [4] Measured from V CC 3.3 V to valid output. [5] See Power-On Behavior section and Figure 4. [6] See Undervoltage Lockout Operation section for operational characteristics. [2] Average Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 6 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches ELECTRICAL CHARACTERISTICS (continued): Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 F, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. [7] Max. Unit CHOPPER STABILIZATION AND OUTPUT MOSFET CHARACTERISTICS Chopping Frequency fC Output Leakage Current [8] IOUTOFF VOUT(OFF) = 12 V, TA = -40C to 85C, output off, VCC VCC(min), t > tPO Output Leakage Current IOUTOFF VOUT(OFF) = 24 V, output off, VCC VCC(min), t > tPO Output Leakage Current, Power-On [8][9] IOUTOFF(PO) VCC VCC(min), t < tPO - 800 - kHz - - 0.1 A - - 1 A - - 95 A Output Saturation Voltage VOUT(SAT) Output on, IOUT = 5 mA - 100 500 mV Output Off Voltage [10] VOUT(OFF) VOUT VOUT(OFF)(max) - - 24 V tr CL = 20 pF, RPULL-UP = 4.8 k - 0.2 2 s tf CL = 20 pF, RPULL-UP = 4.8 k - 0.1 2 s Output on, VPULL-UP 24 V 15 25 40 mA Output Rise Time [11][12] Output Fall Time [11][12] ON-BOARD PROTECTION Output Short-Circuit Current Limit [10] IOM Output Zener Clamp Voltage VZ(OUT) IOUT = 1.5 mA, TA = 25C 32 - - V Supply Zener Clamp Voltage VZ ICC = ICC(max) + 3 mA, TA = 25C 40 - - V Reverse Battery Zener Clamp Voltage VRZ ICC = -5 mA, TA = 25C - - -18 V Reverse Battery Current IRCC VCC = -18 V, TA = 25C -5 - - mA [7] Typical data is at TA = 25C and VCC = 12 V unless otherwise noted; for design information only. Guaranteed by device design and characterization. [9] See Power-On Behavior section and Figure 4. [10] Refer to Figure 7 for typical and enhanced application circuits. [11] C = oscilloscope probe capacitance. L [12] See Figure 2 - Definition of Output Rise and Fall Time. [8] VOUT(OFF) 90% VOUT 90% VOUT(SAT) 10% tf 10% tr t Figure 2: Definition of Output Rise and Fall Time Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 7 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches MAGNETIC CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 F, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit [2] -0Pxx OPTION Operate Point BOPS -0Pxx Option 10 40 70 G BOPN -0Pxx Option -70 -40 -10 G BRPS -0Pxx Option 5 22.5 50 G BRPN -0Pxx Option -50 -22.5 -5 G BHYS -0Pxx Option 5 17.5 40 G Operate Point BOPS -0Sxx Option 10 40 70 G Release Point BRPS -0Sxx Option 5 22.5 50 G Hysteresis BHYS -0Sxx Option 5 17.5 40 G Operate Point BOPN -0Nxx Option 70 40 10 G Release Point BRPN -0Nxx Option 50 22.5 5 G Hysteresis BHYS -0Nxx Option 5 17.5 40 G Release Point Hysteresis -0Sxx OPTION -0Nxx OPTION Continued on next page... Switch to On BRPN Switch to Off BOPS VOUT(OFF) VOUT(SAT) VOUT(SAT) Switch to Off Switch to Off BRPN BOPS Switch to On VOUT(OFF) B- B+ BHYS BOPN BHYS 0 BRPS B- Unipolar North "-xNHx" Switch to On VOUT(SAT) 0 BHYS BRPN BRPN BOPS VOUT Switch to On VOUT(SAT) 0 V+ VOUT VOUT(OFF) V+ Switch to On VOUT(OFF) BOPN B- Switch to Off VOUT VOUT(SAT) BHYS Switch to On BHYS B+ VOUT(SAT) B+ Omnipolar "-xPHx" BOPN 0 BRPS 0 BRPS Unipolar South "-xSHx" Switch to Off Inverted Output Polarity 0 BHYS BHYS V+ Switch to Off B- VOUT(OFF) VOUT VOUT(SAT) VOUT(OFF) Switch to Off VOUT(SAT) B+ Unipolar North "-xNLx" Switch to On VOUT(OFF) BOPN 0 BRPS 0 VOUT(OFF) Switch to On Standard Output Polarity Switch to Off V+ Omnipolar "-xPLx" BOPS Unipolar South "-xSLx" 0 0 BHYS Figure 3: Hall Switch Output State vs. Magnetic Field B- indicates increasing north polarity magnetic field strength, and B+ indicates increasing south polarity magnetic field strength. Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 8 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches MAGNETIC CHARACTERISTICS (continued): Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and CBYP = 0.1 F, unless otherwise specified Characteristics -1Pxx OPTION Symbol Test Conditions Min. Typ. [1] Max. Unit [2] G [3] Operate Point Release Point Hysteresis -1Sxx OPTION [3] BOPS -1Pxx Option 50 95 135 BOPN -1Pxx Option 135 95 50 G BRPS -1Pxx Option 40 70 110 G BRPN -1Pxx Option 110 70 40 G BHYS -1Pxx Option 10 30 47.5 G Operate Point BOPS -1Sxx Option 50 95 135 G Release Point BRPS -1Sxx Option 40 70 110 G Hysteresis BHYS -1Sxx Option 10 30 47.5 G Operate Point BOPN -1Nxx Option 135 95 50 G Release Point BRPN -1Nxx Option 110 70 40 G Hysteresis BHYS -1Nxx Option 10 30 47.5 G -1Nxx OPTION [3] -2Pxx OPTION [3] Operate Point Release Point Hysteresis -2Sxx OPTION [3] BOPS -2Pxx Option 120 150 200 G BOPN -2Pxx Option 200 150 120 G BRPS -2Pxx Option 110 125 190 G BRPN -2Pxx Option 190 125 110 G BHYS -2Pxx Option 10 30 47.5 G Operate Point BOPS -2Sxx Option 120 150 200 G Release Point BRPS -2Sxx Option 110 125 190 G Hysteresis BHYS -2Sxx Option 10 30 47.5 G -2Nxx OPTION [3] Operate Point BOPN -2Nxx Option 200 150 120 G Release Point BRPN -2Nxx Option 190 125 110 G Hysteresis BHYS -2Nxx Option 10 30 47.5 G [1] Typical data are at TA = 25C and VCC = 12 V unless otherwise noted. Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and a positive value for south-polarity magnetic fields. [3] Contact Allegro MicroSystems for availability. [2] Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 9 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches PACKAGE THERMAL CHARACTERISTICS: Device power consumption is extremely low. On-chip power dissipation will not be an issue under normal operating conditions. Characteristic Symbol Test Conditions RJA Package Thermal Resistance Value Units Package LH, 1-layer PCB with copper limited to solder pads 228 C/W Package LH, 2-layer PCB with 0.463 in.2 of copper area each side connected by thermal vias 110 C/W Package UA, 1-layer PCB with copper limited to solder pads 165 C/W Power Dissipation, PD (mW) Power Dissipation versus Ambient Temperature 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 Package LH, 2-layer PCB (RJA = 110C/W) Package UA, 1-layer PCB (RJA = 165C/W) Package LH, 1-layer PCB (RJA = 228C/W) 25 45 65 85 105 125 145 165 185 Temperature (C) Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 10 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Average Supply Current versus Supply Voltage (Output Off) TA (C) -40 25 85 2 6 10 14 18 VCC (V) 35 26 40 30 25 20 ICC (A) ICC (A) 22 15 10 5 TA (C) 30 -40 25 25 20 150 15 VOUT(SAT) (mV) 3.3 12 24 -60 -40 -20 0 20 TA (C) 40 60 80 100 2 6 10 14 VCC (V) 22 15 TA (C) 10 150 2 0 26 6 10 14 18 VCC (V) 25 150 10 14 VCC (V) 18 24 22 -60 -40 22 -20 0 26 20 40 60 TA (C) 80 100 120 140 160 26 220220 200200 180180 160160 140140 120120 100100 80 80 60 60 40 40 20 20 0 0 -60-60 -40-40 -20-20 0 0 20 20 40 40 60 60 80 80 100100 120120 140140 160160 tPERIOD (ms) tPERIOD (ms) -40 6 12 Average Sleep Mode Period versus Ambient Temperature Average Sleep Mode Period versus Ambient Temperature TA (C) 2 3.3 20 5 18 5 0 VCC (V) 25 10 500500 450450 400 350 TA (C) 300 -40 250 25 200 150 150 50 10 14 VCC (V) 24 Average Output Saturation Voltage versus Ambient Average Output Saturation Voltage versus Ambient Temperature forfor IOUT = 5= mA Temperature IOUT 5 mA 400400 350350 VCC (V) VCC (V) 300300 250250 3.3 V, 12 V, and3.3 24 V 200200 150150 12 24 100100 50 50 100 6 3.3 V, 3.312 V, and 24 V 12 A Average Output Saturation Voltage versus Supply Voltage for IOUT = 5 mA 2 VVCC (V) CC (V) TA T(C) (C) 450 0 VCC (V) VOUT(SAT) (mV) VOUT(SAT) (mV) tPERIOD (ms) 500 Average Supply Current versus Ambient Temperature (Output Off) 30 35 Average Sleep Mode Period versus Supply Voltage 220 200 180 160 140 120 100 80 60 40 20 0 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Average Supply Current versus Ambient Temperature Average Supply Current versus Supply Voltage (Output Off) (Output Off) 40 Average Supply Current versus Supply Voltage for TA = 150C 35 (Output Off) 40 0 ICC (A) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 ICC (A) ICC (A) CHARACTERISTIC PERFORMANCE DATA Electrical Characteristics 18 22 26 0 0 -60-60 -40-40 -20-20 0 0 20 20 40 40 60 60 80 80 100100 120120 140140 160160 TA T(C) (C) A Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 11 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches CHARACTERISTIC PERFORMANCE DATA Magnetic Characteristics -0xx Option Average Operate Point versus Ambient Temperature Average Operate Point versus Supply Voltage 70 TA (C) BOPS South 50 150 BOPN -10 -30 -40 -50 25 North 2 4 6 10 12 14 VCC (V) 16 18 20 22 24 12 10 24 BOPN -10 -30 3.3 -50 -70 150 8 3.3 30 BOP (G) BOP (G) 25 10 26 -60 30 0 150 BRPN -10 -20 10 12 14 VCC (V) 16 18 20 22 24 25 12 24 BRPN 3.3 20 150 17.5 BHYS(N) 15 12.5 -40 10 25 7.5 150 12 14 VCC (V) 16 18 20 22 12 North -60 -40 -20 0 20 40 60 TA (C) 80 100 120 140 160 24 24 26 VCC (V) BHYS(S) 27.5 25 3.3 22.5 BHYS (G) BHYS (G) 25 10 24 VCC (V) BRPS 30 -40 22.5 8 160 Average Hysteresis versus Ambient Temperature 27.5 6 140 -10 -50 TA (C) BHYS(S) 4 120 0 Average Hysteresis versus Supply Voltage 2 100 10 26 30 5 TA (C) 80 3.3 -40 150 8 60 -30 25 North 6 40 -20 -40 -30 4 20 20 BRP (G) BRP (G) 10 25 2 0 South 40 -40 20 -50 -20 Average Release Point versus Ambient Temperature 30 -40 -40 50 TA (C) BRPS South 40 12 North Average Release Point versus Supply Voltage 50 VCC (V) BOPS South 50 -40 30 -70 70 12 20 24 17.5 BHYS(N) 15 12.5 3.3 10 12 7.5 5 -60 -40 -20 0 20 40 60 TA (C) 80 100 120 140 160 Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 24 12 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches CHARACTERISTIC PERFORMANCE DATA Magnetic Characteristics -1xx Option Average Operate Point versus Ambient Temperature 135 120 105 90 75 60 45 30 15 0 -15 -30 -45 -60 -75 -90 -105 -120 -135 135 120 105 90 75 60 45 30 15 0 -15 -30 -45 -60 -75 -90 -105 -120 -135 TA (C) BOPS South -40 25 150 BOPN -40 North 25 150 2 4 6 8 10 12 14 VCC (V) 16 18 20 22 24 VCC (V) BOPS South 12 26 24 BOPN 12 -60 -40 25 150 BRPN -40 North 25 150 6 8 10 12 14 VCC (V) 16 18 20 22 24 26 25 150 BHYS(N) -40 25 150 6 8 10 12 14 VCC (V) 16 18 20 22 24 26 BHYS (G) BHYS (G) -40 4 20 40 60 TA (C) 80 100 120 140 160 24 3.3 South 12 24 BRPN 3.3 North 12 -60 -40 -20 0 20 40 60 TA (C) 80 100 120 140 160 24 Average Hysteresis versus Ambient Temperature TA (C) BHYS(S) 2 0 VCC (V) BRPS Average Hysteresis versus Supply Voltage 47.5 45 42.5 40 37.5 35 32.5 30 27.5 25 22.5 20 17.5 15 12.5 10 -20 BRP (G) BRP (G) South 4 -40 Average Release Point versus Ambient Temperature 105 90 75 60 45 30 15 0 -15 -30 -45 -60 -75 -90 -105 TA (C) BRPS 2 3.3 North Average Release Point versus Supply Voltage 105 90 75 60 45 30 15 0 -15 -30 -45 -60 -75 -90 -105 3.3 BOP (G) BOP (G) Average Operate Point versus Supply Voltage 47.5 45 42.5 40 37.5 35 32.5 30 27.5 25 22.5 20 17.5 15 12.5 10 VCC (V) BHYS(S) 3.3 12 24 BHYS(N) 3.3 12 -60 -40 -20 0 20 40 60 TA (C) 80 100 120 140 160 Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 24 13 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches CHARACTERISTIC PERFORMANCE DATA Magnetic Characteristics -2xx Option Average Operate Point versus Ambient Temperature Average Operate Point versus Supply Voltage 200 TA (C) BOPS 160 South 80 25 BOP (G) 150 0 BOPN -40 North -120 -160 -200 2 4 6 8 10 12 14 VCC (V) 16 18 20 22 24 -80 -40 -120 25 -160 150 -200 150 0 BRPN -40 North 8 10 12 14 16 18 20 22 24 26 -200 -40 25 150 14 VCC (V) 16 18 20 22 24 26 BHYS (G) BHYS (G) BHYS(N) 12 100 120 140 160 24 3.3 12 24 BRPN North 3.3 12 -60 -40 -20 0 20 40 60 TA (C) 80 100 120 140 160 24 Average Hysteresis versus Ambient Temperature 150 10 TA (C) 80 -160 150 25 8 60 0 -80 -40 6 40 -40 -120 TA (C) BHYS(S) 4 20 South Average Hysteresis versus Supply Voltage 2 0 40 VCC (V) 47.5 45 42.5 40 37.5 35 32.5 30 27.5 25 22.5 20 17.5 15 12.5 10 -20 VCC (V) BRPS 80 -40 -160 6 -40 120 25 4 -60 12 160 BRP (G) BRP (G) 25 2 3.3 North 200 -40 South 40 -200 BOPN -40 Average Release Point versus Ambient Temperature 160 -80 24 0 TA (C) BRPS -120 12 40 Average Release Point versus Supply Voltage 80 3.3 80 26 200 120 South 120 -40 40 -80 160 BOP (G) 120 VCC (V) BOPS 200 47.5 45 42.5 40 37.5 35 32.5 30 27.5 25 22.5 20 17.5 15 12.5 10 VCC (V) BHYS(S) 3.3 12 24 BHYS(N) 3.3 12 -60 -40 -20 0 20 40 60 TA (C) 80 100 120 140 160 Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 24 14 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches FUNCTIONAL DESCRIPTION Low Average Power Power-On Behavior The built-in micropower control periodically activates the Hall switch circuitry for a short period of time (tAWAKE), and deactivates it for the remainder of the period (tPERIOD). See Figure 4: Micropower Operation and Power-On Behavior, for an example of the system timing and the behavior of the device during the power-on sequence. The short duration awake state allows for sensor stabilization prior to sampling the Hall switch and latching the state on the output. The output is latched on the falling edge of the timing pulse and held in the last sampled state during the sleep period; updates to the output only occur on the falling edge of the timing pulse. The micropower control operates independently of the output driver state. Device power-on begins when the supply voltage reaches VCC(min). During the power-on time, tPO, the device output is off with the exception of IOUTOFF(PO). Use of a large pull-up resistor, RPULL-UP (see Figure 7), can influence the Power-On State (POS) voltage level on the output pin during tON. The output voltage level during the POS is a function of the pull-up resistor and pull-up voltage. The Power-On State voltage level can be determined by subtracting the voltage drop created by RPULL-UP and IOUTOFF(PO) from the pull-up voltage: VOUT = VOUT(OFF) - (IOUTOFF(PO) x RPULL-UP) To retain a power-on output voltage level above VPULL-UP / 2, a pull-up resistor less than or equal to 20 k is recommended. After power-on is complete and the power-on time has elapsed, the device output will correspond with the applied magnetic field for B > BOP and B < BRP. Powering-on the device in the hysteresis range (less than BOP and higher than BRP) will cause the device output to remain off. A valid output state is attained after the first excursion beyond BOP or BRP. V Supply Voltage VPULL-UP (V) VCC (min) 0 tPO I ICC(EN) Supply Current ICC(DIS) Supply Current Undefined for VCC < VCC (min) Off On Output State, "H" Polarity On tAWAKE tSLEEP Latch Output t POS Key Output State Undefined for VCC < VCC (min) tPO tSLEEP tAWAKE POS B > BOP B < BOP tSLEEP t V Off tSLEEP Latch Output V Output State, "L" Polarity tPO t tPERIOD POS Output State Undefined for VCC < VCC (min) Key tPO tSLEEP tAWAKE POS B > BOP, BRP < B < BOP B < BRP tSLEEP t RLOAD (k) 1 2.4 4.8 3.3 7.2 9.6 12 14.4 1 2.4 4.8 12 7.2 9.6 12 14.4 1 2.4 4.8 24 7.2 9.6 12 14.4 *VCC VCC(min) and t < tPO Figure 4: Micropower Operation and Power-On Behavior Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 15 V APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Functional Safety 2 - The APS11700 and APS11760 were designed in accordance with the international standard for automotive functional safety, ISO 26262:2011. These products achieve an ASIL (Automotive Safety Integrity Level) rating of ASIL A according to the standard. The APS11700 and APS11760 are both classified as a SEooC (Safety Element out of Context) and can be easily integrated into safety-critical systems requiring higher ASIL ratings that incorporate external diagnostics or use measures such as redundancy. Safety documentation will be provided to support and guide the integration process. For further information, contact your local FAE for A2-SILTM documentation: www.allegromicro.com/ASIL. Undervoltage Lockout Operation The APS11700 and APS11760 have an internal diagnostic to check the voltage supply (an undervoltage lockout regulator). When the supply voltage falls below the undervoltage lockout voltage, VCC(UV)EN, the device will enter reset, where the output state returns to the High state (the Power-On State) until VCC is increased to VCC(UV)DIS. The supply voltage monitor employed by the undervoltage lockout circuit is only active during the awake time. Therefore, undervoltage lockout can be enabled and disabled only when the device is in the awake state. See Figure 5 for an example. When enabled, the supply current will be ICC(EN). Once VCC is restored to above VCC(UV)DIS, the power-on sequence begins and the output will correspond with the applied magnetic field for B > BOP and B < BRP after tPOR has elapsed. In the case the supply voltage does not return to these operational levels, or if the applied magnetic field is within the hysteresis range, the output will remain in the power-on state. Operation The APS11700 and APS11760 are integrated Hall-effect sensor ICs with an open-drain output. Table 1 offers a guide for selecting the output polarity configuration, further explained in the configuration sections below. The output is an open-drain NMOS transistor that actuates in response to a magnetic field. The direction of the applied magnetic field is perpendicular to the branded face for the APS11700, and parallel with the branded face for the APS11760; see Figure 6 for an illustration. The devices are offered in two packages: the UA package, a 3-pin through-hole mounting configuration, or in the LH package, a 3-pin surfacemount configuration. See the Selection Guide for a complete list of available options. Configurations xSLx and xSHx. The unipolar output of these devices is actuated when a south-polarity magnetic field perpendicular to the Hall element exceeds the operate point threshold, BOPS. When BOPS is exceeded, the xSLx output turns on (goes V Supply Voltage VCC (min) VCC(UV)DIS VCC(UV)EN Power-Off t I Supply Current* ICC(EN) UVLO Enabled ICC(DIS) V Output State, "L" Polarity POS tPOR t Key High POS B > BOP B < BOP Low V Output State, "H" Polarity POS t Key High POS B > BOP, BRP < B < BOP Low *Micropower Duty Cycle and Period Not to Scale t B < BRP Figure 5: Undervoltage Lockout Behavior Figure 6: Magnetic Sensing Orientations APS11700 LH (Panel A), APS11700 UA (Panel B), APS11760 LH (Panel C) and APS11760 UA (Panel D) Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 16 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches low). The xSHx is complementary, in that for this device the output turns off (goes high) when BOPS is exceeded. When the magnetic field is removed or reduced below the release point, BRPS, the device outputs return to their original state--off for the xSLx and on for the xSHx. See Figure 3 for unipolar south switching behavior. Configurations xNLx and xNHx. The unipolar output of these devices is actuated when a north-polarity magnetic field perpendicular to the Hall element exceeds the operate point threshold, BOPN. When BOPN is exceeded, the xNLx output turns on (goes low). The xNHx is complementary, in that for this device the output turns off (goes high) when BOPN is exceeded. When the magnetic field is removed or reduced below the release point, BRPN, the device outputs return to their original state--off for the xNLx and on for the xNHx. See Figure 3 for unipolar north switching behavior. Table 1: Switch Polarity Configuration Options Part Number Suffix Operating Mode Output State for B > BOP Output State for B =0G Power-On State, t < tPO xSLx Unipolar South Low High High xSHx Unipolar South High Low High xNLx Unipolar North Low High High xNHx Unipolar North High Low High xPLx Omnipolar Low High High xPHx Omnipolar High Low High Configurations xPLx and xPHx. The omnipolar operation of these devices allows actuation with either a north or a south polarity field. The xPLx operates using the standard output polarity convention. Fields exceeding the operating points, BOPS or BOPN, will turn the output on (low). When the magnetic field is removed or reduced below the release point, BRPN or BRPS, the device output turns off (goes high). The xPHx is complementary, in that for the device, a north or south polarity field exceeding the operate points, BOPS or BOPN, will turn the output off (high). Removal of the field, or reduction below the release point threshold, BRPS or BRPN, will turn the output on (low). See Figure 3 for omnipolar switching behavior. After turn-on, the output transistor is capable of sinking current up to the short circuit current limit, IOM, which is a minimum of 15 mA. The difference in the magnetic operate and release points is the hysteresis, BHYS, of the device. This built-in hysteresis allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 17 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Applications It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall element) between the supply and ground of the device to guarantee correct performance under harsh environmental conditions and to reduce noise from internal circuitry. As is shown in Figure 7: Typical and Enhanced Protection Application Circuits, a 0.1 F capacitor is required. Extensive applications information for Hall-effect devices is available in: * Hall-Effect IC Applications Guide, AN27701, * Hall-Effect Devices: Guidelines for Designing Subassemblies Using Hall-Effect Devices AN27703.1 * Soldering Methods for Allegro's Products - SMD and ThroughIn applications where the APS11700 or APS11760 receives Hole, AN26009 its power from an unregulated source such as a car battery, or where greater immunity is required, additional measures may All are provided on the Allegro website: be employed. Specifications for such transients will vary, so www.allegromicro.com protection circuit design should be optimized for each application. For example, the circuit shown in Figure 7 includes an optional series resistor and output capacitor which improves performance during Powered ESD testing (ISO 10605), Conducted Immunity (ISO 7637-2 and ISO 16750-2), and Bulk Current Injection testing (ISO 11452-4). Vertical Hall-Effect Sensor Linear Tools Typical Applications Circuit VSUPPLY (3.3 to 24 V) RPULL-UP 4.8 k APS117xx VCC CBYP 0.1 F System design and magnetic sensor evaluation often require an indepth look at the overall strength and profile generated by a magnetic field input. To aid in this evaluation, Allegro MicroSystems provides a high-accuracy linear output tool capable of reporting the non-perpendicular magnetic field by means of an vertical Hall-effect sensor IC equipped with a calibrated analog output. For further information, contact your local Allegro field applications engineer or sales representative. VOUT VOUT GND Enhanced Protection Circuit VPULL-UP ( 24 V) VSUPPLY (3.3 to 24 V) RS 100 VCC CBYP 0.1 F RPULL-UP 4.8 k APS117xx VOUT VOUT GND COUT 4.7 nF Figure 7: Typical and Enhanced Protection Application Circuits Recommended RPULL-UP 20 k. See Power-On Behavior section. Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 18 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches CHOPPER STABILIZATION A limiting factor for switchpoint accuracy when using Hall-effect technology is the small signal voltage developed across the Hall plate. This voltage is proportionally small relative to the offset that can be produced at the output of the Hall sensor. This makes it difficult to process the signal and maintain an accurate, reliable output over the specified temperature and voltage range. Chopper stabilization is a proven approach used to minimize Hall offset. The technique, dynamic quadrature offset cancellation, removes key sources of the output drift induced by temperature and package stress. This offset reduction technique is based on a signal modulation-demodulation process. Figure 8: Model of Chopper Stabilization Circuit (Dynamic Offset Cancellation) illustrates how it is implemented. The undesired offset signal is separated from the magnetically induced signal in the frequency domain through modulation. The subsequent demodulation acts as a modulation process for the offset causing the magnetically induced signal to recover its original spectrum at baseband while the DC offset becomes a high-frequency signal. Then, using a low-pass filter, the signal passes while the modulated DC offset is suppressed. Allegro's innovative chopper-stabilization technique uses a high-frequency clock. The high-frequency operation allows a greater sampling rate that produces higher accuracy, reduced jitter, and faster signal processing. Additionally, filtering is more effective and results in a lower noise analog signal at the sensor output. Devices such as the APS11700 and APS11760 that use this approach have an extremely stable quiescent Hall output voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. This technique is made possible through the use of a BiCMOS process which allows the use of low offset and low noise amplifiers in combination with high-density logic and sample-and-hold circuits. Regulator Hall Element Amp Sample and Hold Clock/Logic Low-Pass Filter Figure 8: Model of Chopper Stabilization Circuit (Dynamic Offset Cancellation) Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 19 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Package LH, 3-Pin SMD (SOT23W) APS11700 (Reference DWG-2840) +0.12 2.98 -0.08 1.49 D 44 3 A +0.020 0.180-0.053 0.96 D +0.10 2.90 -0.20 +0.19 1.91 -0.06 2.40 0.70 D 0.25 MIN 1.00 2 1 0.55 REF 0.25 BSC 0.95 Seating Plane Gauge Plane 8X 10 REF B PCB Layout Reference View Branded Face 1.00 0.13 0.95 BSC 0.40 0.10 For Reference Only; not for tooling use (reference DWG-2840) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A Active Area Depth, 0.28 mm REF B Reference land pattern layout All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances C Branding scale and appearance at supplier discretion D Hall element, not to scale A09 +0.10 0.05 -0.05 1 C Standard Branding Reference View Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 20 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Package UA, 3-Pin SIP APS11700 (Reference DWG-9065) +0.08 4.09 -0.05 45 B E C 2.04 1.52 0.05 +0.08 3.02 -0.05 1.44 E 10 Mold Ejector Pin Indent E Branded Face A 1.02 MAX 45 0.79 REF A10 1 1 2 D Standard Branding Reference View 3 +0.03 0.41 -0.06 14.99 0.25 +0.05 0.43 -0.07 For Reference Only; not for tooling use (reference DWG-9065) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A Dambar removal protrusion (6X) B Gate and tie bar burr area C Active Area Depth, 0.50 mm REF D Branding scale and appearance at supplier discretion E Hall element (not to scale) 1.27 NOM Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 21 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Package LH, 3-Pin SMD (SOT23W) APS11760 (Reference DWG-2840) +0.12 2.98 -0.08 44 3 +0.020 0.180-0.053 0.96 D +0.10 2.90 -0.20 +0.19 1.91 -0.06 2.40 0.70 D 0.25 MIN 1.00 2 1 0.55 REF A 0.25 BSC 0.95 Seating Plane Gauge Plane 8X 10 REF B PCB Layout Reference View Branded Face 1.00 0.13 0.95 BSC 0.40 0.10 For Reference Only; not for tooling use (reference DWG-2840) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A Active Area Depth, 1.32 mm B Reference land pattern layout All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances C Branding scale and appearance at supplier discretion D Hall element, not to scale AAD +0.10 0.05 -0.05 1 C Standard Branding Reference View Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 22 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Package UA, 3-Pin SIP APS11760 (Reference DWG-9065) +0.08 4.09 -0.05 45 B E 2.04 1.52 0.05 +0.08 3.02 -0.05 C E 10 Mold Ejector Pin Indent Branded Face A 1.02 MAX 45 0.79 REF AAD 1 1 2 D Standard Branding Reference View 3 +0.03 0.41 -0.06 14.99 0.25 +0.05 0.43 -0.07 For Reference Only; not for tooling use (reference DWG-9065) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A Dambar removal protrusion (6X) B Gate and tie bar burr area C Active Area Depth, 1.27 mm D Branding scale and appearance at supplier discretion E Hall element (not to scale) 1.27 NOM Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 23 APS11700 and APS11760 Micropower Vertical and Planar Hall-Effect Switches Revision History Number Date Description - November 1, 2018 Initial release 1 November 26, 2018 Updated footnote (page 4) and Figure 7 (page 16) 2 February 11, 2019 Updated Selection Guide (page 3) and ESD Performance table (page 4); added Magnetic Characteristics -1xx and -2xx plots (pages 13-14) Copyright (c)2019, Allegro MicroSystems, LLC Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro's products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro's product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Copies of this document are considered uncontrolled documents. For the latest version of this document, visit our website: www.allegromicro.com Allegro MicroSystems, LLC 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 24