DESCRIPTION
The APS11700 and APS11760 families of micropower Hall-
effect switches are AEC-Q100 qualified for 24 V automotive
applications and compliant with ISO 26262:2011 ASIL A.
These sensors are temperature-stable and suited for operation
over extended junction temperature ranges up to 165°C.
This family of Hall-effect switches features a micropower
regulator that draws as little as 6 µA of current. The micropower
regulator of these devices are designed for harsh automotive and
industrial environments and features on-board overvoltage and
reverse connection protection. The APS11700 and APS11760
are especially suited for direct battery connection for automotive
and industrial applications up to 24 V.
APS11700-DS, Rev. 2
MCO-0000522
FEATURES AND BENEFITS
• Ultralow power consumption
• ASIL A functional safety compliance
• Planar and vertical Hall-effect sensor ICs
• 3.3 to 24 V operation
• Automotive-grade ruggedness and fault tolerance
□Extended AEC-Q100 qualification
□Internal protection circuits enable 40 V load dump
compliance
□Reverse-battery protection
□Output short-circuit and overvoltage protection
□Operation from –40°C to 165°C junction temperature
□High EMC immunity
• Omnipolar and unipolar switch threshold options
• Choice of output polarity
• Open-drain output
• Solid-state reliability
Micropower Vertical and Planar
Hall-Effect Switches
PACKAGES
Figure 1: Functional Block Diagram
Not to scale
APS11700
and APS11760
3-pin SOT23W
(suffix LH)
3-pin SIP
(suffix UA)
February 11, 2019
Output
Control
VCC
GND
VOUT
Hall
Amp.
Dynamic Offset
Cancellation
Low-Pass
Filter
Current
Limit
To All Subcircuits
Sample, Hold &
Averaging
Schmitt
Trigger
POK
Regulator
Clock /
Micropower
Logic
Continued on next page...
TYPICAL APPLICATIONS
• Reed switch replacement
• Gear shift selectors and driver controls (PRNDL)
• Open/close sensor for LCD screens/doors/lids/trunks
• Clutch/brake position sensor
• Lighting actuation slave sensor
• Wiper home/end position sensor
• End of travel and index sensors
• Industrial controls
• White goods
2
-
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
2
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
The APS11700 and APS11760 families are available in several
different magnetic sensitivities and polarities to offer flexible options
for system design. They are available in active high and active low
variants for ease of integration into electronic subsystems.
The APS11700 features a Hall-effect element that is sensitive to
magnetic flux perpendicular to the face of the IC package. The
APS11760 features a vertical Hall-effect sensing element sensitive
to magnetic flux parallel to the face of the IC package.
The devices include on-board protection for operation directly from
an automobile battery, as well as protection from shorts to ground
by limiting the output current until the short is removed. The device
is especially suited for operation from unregulated supplies.
Two package styles provide a choice of through-hole or surface
mounting. Package type LH is a modified 3-pin SOT23W surface-
mount package, while package type UA is a 3-pin ultramini SIP
for through-hole mounting. Both packages are lead (Pb) free, with
100% matte-tin-plated leadframes.
DESCRIPTION (continued)
L
Opera�ng Mode
S
– Unipolar South Sensing
P
– Omnipolar (North and South) Sensing
N – Unipolar North Sensing *
Allegro Iden�fier (Device Family)
APS – Digital Posi�on Sensor
Ambient Opera�ng Temperature Range
L – -40°C to +150°C
Instruc�ons (Packing)
BU – Bulk, 500 pieces/bag (UA Only)
LT – 7-in. reel, 3,000 pieces/reel (LH Only)
LX – 13-in. reel, 10,000 pieces/reel (LH Only)
TN – 7-in . reel, 4,000 pieces /reel (UA Only)
Package Designa�on
LHA
– 3-pin SOT23W Surface Mount
UAA – 3-pin SIP Through-Hole
Complete Part
Number Format
Device Switch Threshold Magnitude
0– ±40 G BOP, ±22.5 G BRP (typ.)
1 – ±95 G BOP, ±70 G BRP (typ.) *
2 – ±150 G BOP, ±125 G BRP (typ.) *
3 – ±280 G BOP, ±225 G BRP (typ.) *
APS
11700
Output Polarity for B > BOP
H – High (Output Off)
L – Low (Output On)
-
L L H A S0 L
Configura�on Op�ons
T
Planar
Ver�cal
APS
11760
Device Sensing Configura�on
11700 – Perpendicular to package face, “Z”
11760 – Parallel with package face, “X”
E.g. APS11700LLHAXX-XXXX
APS11700LLHALT -
0
SL
12 V Average ICC and Micropower Period
Blank – 6 µA, 160 ms (typ.)
1– 33 µA, 6.8 ms (typ.) *
2– 110 µA, 1.4 ms (typ.) *
*Contact Allegro for availability.
RoHS
COMPLIANT
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
3
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
SELECTION GUIDE
Part Number [1] Packing [2] Mounting Sensing
Orientation
Average
Supply
Current (µA)
Operating
Mode
Typical
Operate Point
(G)
APS11700LLHALT-0SL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount
Z-Axis 6 Unipolar
South 40APS11700LLHALX-0SL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount
APS11700LUAA-0SL Bulk, 500 pieces/bag 3-pin SIP through-hole
APS11700LLHALT-0PL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount
Z-Axis 6 Omnipolar ±40APS11700LLHALX-0PL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount
APS11700LUAA-0PL Bulk, 500 pieces/bag 3-pin SIP through-hole
APS11760LLHALT-0SL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount X-Axis 6Unipolar
South 40APS11760LLHALX-0SL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount
APS11760LUAA-0SL Bulk, 500 pieces/bag 3-pin SIP through-hole Y-Axis
APS11760LLHALT-0PL 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount X-Axis 6 Omnipolar ±40APS11760LLHALX-0PL 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount
APS11760LUAA-0PL Bulk, 500 pieces/bag 3-pin SIP through-hole Y-Axis
[1] Contact Allegro MicroSystems for options not listed in the selection guide.
[2] Contact Allegro MicroSystems for additional packing options.
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
4
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Notes Rating Units
Supply Voltage [1] VCC 40 V
Reverse Supply Voltage [1] VRCC –18 V
Output Voltage [1] VOUT –0.3 to 32 V
Output Current [2] IOUT 40 mA
Reverse Output Current IROUT –50 mA
Magnetic Flux Density [3] B Unlimited G
Operating Ambient Temperature TARange L –40 to 150 °C
Maximum Junction Temperature TJ(max) 165 °C
Storage Temperature Tstg –65 to 170 °C
[1] This rating does not apply to extremely short voltage transients. Transient events such as Load Dump and/or ESD have individual, specific ratings.
[2] Through short-circuit current limiting device.
[3] Guaranteed by design.
ESD PERFORMANCE [4]
Characteristic Symbol Notes Rating Units
ESD Voltage VESD(HBM) Human Body Model according to AEC-Q100-002 ±11 kV
[4] ESD ratings provided are based on qualification per AEC-Q100 as an expected level of ESD robustness.
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
5
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
PINOUT DIAGRAMS AND TERMINAL LIST
(View from branded face)
1
3
2
GND
VOUT
VCC
1
2
3
GND
VOUT
VCC
3-pin SOT23W
(suffix LH)
3-pin SIP
(suffix UA)
Terminal List
Name Description Number
LH UA
VCC Connects power supply to chip 1 1
VOUT Output from circuit 2 3
GND Terminal for ground connection 3 2
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
6
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
ELECTRICAL CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and
CBYP = 0.1 µF, unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit
SUPPLY AND STARTUP
Supply Voltage VCC 3.3 – 24 V
Supply Current [2][3]
ICC(AVG)25C VCC = 12 V, TA = 25°C, Output Off – 6 – µA
ICC(AVG)85C VCC = 12 V, TA = –40°C to 85°C, Output Off 2 6 15 µA
ICC(AVG)150C TA = 150°C, Output Off 2 11.3 40 µA
ICC(EN)
APS11700 Device in awake mode 1 2.2 4 mA
APS11760 Device in awake mode 1 2.5 5 mA
ICC(DIS) Device in sleep mode 2 – 35 µA
Power-On Time [4] tPO VCC ≥ VCC(min) – 180 350 µs
Power-On State [5] POS VCC ≥ VCC(min), t < tPO High –
Undervoltage Lockout [6]
VCC(UV)EN
Enable, valid during tAWAKE only;
VCC ≥ VCC(min) → VCC < VCC(min) 1.9 2.25 – V
VCC(UV)DIS
Release, valid during tAWAKE only;
VCC < VCC(min) → VCC ≥ VCC(min) – 2.5 3 V
UVLO Reset Time [6] tPOR – 100 – µs
MICROPOWER OPERATION (See Figure 4)
Period tPERIOD – 160 220 ms
Awake tAWAKE – 50 – µs
Sleep tSLEEP tPERIOD – tAWAKE – 159.95 – ms
Micropower Operation Duty Cycle DCt– 0.03 – %
[1] Typical data is at TA = 25°C and VCC = 12 V unless otherwise noted.
[2] Average current measured for one micropower period, tAWAKE + tSLEEP
.
[3] Average supply current up to TA = 85°C, ICC(AVG)85C, is guaranteed by device design and characterization.
[4] Measured from VCC ≥ 3.3 V to valid output.
[5] See Power-On Behavior section and Figure 4.
[6] See Undervoltage Lockout Operation section for operational characteristics.
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
7
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
ELECTRICAL CHARACTERISTICS (continued): Valid over full operating voltage and ambient temperature ranges for
TJ < TJ(max) and CBYP = 0.1 µF, unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. [7] Max. Unit
CHOPPER STABILIZATION AND OUTPUT MOSFET CHARACTERISTICS
Chopping Frequency fC– 800 – kHz
Output Leakage Current [8] IOUTOFF
VOUT(OFF) = 12 V, TA = –40°C to 85°C, output off,
VCC ≥ VCC(min), t > tPO
– – 0.1 µA
Output Leakage Current IOUTOFF
VOUT(OFF) = 24 V, output off, VCC ≥ VCC(min), t >
tPO
– – 1 µA
Output Leakage Current,
Power-On [8][9] IOUTOFF(PO) VCC ≥ VCC(min), t < tPO – – 95 µA
Output Saturation Voltage VOUT(SAT) Output on, IOUT = 5 mA – 100 500 mV
Output Off Voltage [10] VOUT(OFF) VOUT ≤ VOUT(OFF)(max) – – 24 V
Output Rise Time [11][12] trCL = 20 pF, RPULL-UP = 4.8 kΩ – 0.2 2 µs
Output Fall Time [11][12] tfCL = 20 pF, RPULL-UP = 4.8 kΩ – 0.1 2 µs
ON-BOARD PROTECTION
Output Short-Circuit Current Limit [10] IOM Output on, VPULL-UP ≤ 24 V 15 25 40 mA
Output Zener Clamp Voltage VZ(OUT) IOUT = 1.5 mA, TA = 25°C 32 – – V
Supply Zener Clamp Voltage VZICC = ICC(max) + 3 mA, TA = 25°C 40 – – V
Reverse Battery Zener Clamp Voltage VRZ ICC = –5 mA, TA = 25°C – – –18 V
Reverse Battery Current IRCC VCC = –18 V, TA = 25°C –5 – – mA
[7] Typical data is at TA = 25°C and VCC = 12 V unless otherwise noted; for design information only.
[8] Guaranteed by device design and characterization.
[9] See Power-On Behavior section and Figure 4.
[10] Refer to Figure 7 for typical and enhanced application circuits.
[11] CL = oscilloscope probe capacitance.
[12] See Figure 2 - Definition of Output Rise and Fall Time.
Figure 2: Denition of Output Rise and Fall Time
VOUT
t
VOUT(OFF)
VOUT(SAT)
90%
10%
90%
10%
tftr
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
8
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
MAGNETIC CHARACTERISTICS: Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and
CBYP = 0.1 µF, unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit [2]
-0Pxx OPTION
Operate Point BOPS -0Pxx Option 10 40 70 G
BOPN -0Pxx Option –70 –40 –10 G
Release Point BRPS -0Pxx Option 5 22.5 50 G
BRPN -0Pxx Option –50 –22.5 –5 G
Hysteresis BHYS -0Pxx Option 5 17.5 40 G
-0Sxx OPTION
Operate Point BOPS -0Sxx Option 10 40 70 G
Release Point BRPS -0Sxx Option 5 22.5 50 G
Hysteresis BHYS -0Sxx Option 5 17.5 40 G
-0Nxx OPTION
Operate Point BOPN -0Nxx Option ‒70 ‒40 ‒10 G
Release Point BRPN -0Nxx Option ‒50 ‒22.5 ‒5 G
Hysteresis BHYS -0Nxx Option 5 17.5 40 G
Continued on next page...
Figure 3: Hall Switch Output State vs. Magnetic Field
B- indicates increasing north polarity magnetic eld strength, and B+ indicates increasing south polarity magnetic eld strength.
Switch to On
Switch to Off
Switch to Off
Switch to On
B
OPN
B
RPN
B
RPS
B
OPS
B- B+0
B
HYS
B
HYS
V
OUT(SAT)
V
OUT(OFF)
V
OUT(SAT)
V
OUT(OFF)
Switch to On
Switch to Off
Switch to Off
Switch to On
B
OPN
B
RPN
B
RPS
B
OPS
B
HYS
B
HYS
B- B+
0
V
OUT(SAT)
V
OUT(OFF)
V
OUT(SAT)
V
OUT(OFF)
Omnipolar
“-xPLx”
Switch to On
Switch to Off
B
OPN
B
RPN
V+
V
OUT(SAT)
V
OUT(OFF)
B- 0
0
V
OUT
B
HYS
Switch to Off
Switch to On
V
OUT(SAT)
V
OUT(OFF)
B
HYS
B
OPN
B
RPN
V+
B- 0
0
V
OUT
Unipolar North
“-xNLx”
Unipolar North
“-xNHx”
Omnipolar
“-xPHx”
Switch to Off
Switch to On
B
RPS
B
OPS
V
OUT(SAT)
V
OUT(OFF)
B+0
B
HYS
V
OUT
V+
0
Switch to On
Switch to Off
V
OUT(SAT)
V
OUT(OFF)
B
HYS
V+
0
B
RPS
B
OPS
B+0
Unipolar South
“-xSLx”
Unipolar South
“-xSHx”
V
OUT
Standard
Output
Polarity
Inverted
Output
Polarity
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
9
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
MAGNETIC CHARACTERISTICS (continued): Valid over full operating voltage and ambient temperature ranges for TJ < TJ(max) and
CBYP = 0.1 µF, unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit [2]
-1Pxx OPTION [3]
Operate Point BOPS -1Pxx Option 50 95 135 G
BOPN -1Pxx Option ‒135 ‒95 ‒50 G
Release Point BRPS -1Pxx Option 40 70 110 G
BRPN -1Pxx Option ‒110 ‒70 ‒40 G
Hysteresis BHYS -1Pxx Option 10 30 47.5 G
-1Sxx OPTION [3]
Operate Point BOPS -1Sxx Option 50 95 135 G
Release Point BRPS -1Sxx Option 40 70 110 G
Hysteresis BHYS -1Sxx Option 10 30 47.5 G
-1Nxx OPTION [3]
Operate Point BOPN -1Nxx Option ‒135 ‒95 ‒50 G
Release Point BRPN -1Nxx Option ‒110 ‒70 ‒40 G
Hysteresis BHYS -1Nxx Option 10 30 47.5 G
-2Pxx OPTION [3]
Operate Point BOPS -2Pxx Option 120 150 200 G
BOPN -2Pxx Option ‒200 ‒150 ‒120 G
Release Point BRPS -2Pxx Option 110 125 190 G
BRPN -2Pxx Option ‒190 ‒125 ‒110 G
Hysteresis BHYS -2Pxx Option 10 30 47.5 G
-2Sxx OPTION [3]
Operate Point BOPS -2Sxx Option 120 150 200 G
Release Point BRPS -2Sxx Option 110 125 190 G
Hysteresis BHYS -2Sxx Option 10 30 47.5 G
-2Nxx OPTION [3]
Operate Point BOPN -2Nxx Option ‒200 ‒150 ‒120 G
Release Point BRPN -2Nxx Option ‒190 ‒125 ‒110 G
Hysteresis BHYS -2Nxx Option 10 30 47.5 G
[1] Typical data are at TA = 25°C and VCC = 12 V unless otherwise noted.
[2] Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and a positive value for south-polarity magnetic fields.
[3] Contact Allegro MicroSystems for availability.
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
10
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
PACKAGE THERMAL CHARACTERISTICS: Device power consumption is extremely low. On-chip power dissipation will not be an issue under
normal operating conditions.
Characteristic Symbol Test Conditions Value Units
Package Thermal Resistance RθJA
Package LH, 1-layer PCB with copper limited to solder pads 228 °C/W
Package LH, 2-layer PCB with 0.463 in.
2 of copper area each side
connected by thermal vias 110 °C/W
Package UA, 1-layer PCB with copper limited to solder pads 165 °C/W
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
25 45 65 85 105 125 145 165 185
Power Dissipation, PD(mW)
Temperature (°C)
Power Dissipation versus Ambient Temperature
Package LH, 2-layer PCB
(R
θJA
= 110°C/W)
Package UA, 1-layer PCB
(R
θJA
= 165°C/W)
Package LH, 1-layer PCB
(R
θJA
= 228°C/W)
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
11
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA
Electrical Characteristics
0
5
10
15
20
25
30
35
40
-60 -40 -20 020 40 60 80 100 120 140 160
ICC (µA)
TA(°C)
Average Supply Current versus Ambient Temperature
(Output Off)
3.3
12
24
VCC (V)
0
5
10
15
20
25
30
35
40
2 6 10 14 18 22 26
ICC (µA)
VCC (V)
Average Supply Current versus Supply Voltage
(Output Off)
-40
25
150
TA(°C)
0
20
40
60
80
100
120
140
160
180
200
220
-60 -40 -20 020 40 60 80 100 120 140 160
tPERIOD (ms)
TA(°C)
Average Sleep Mode Period versus Ambient Temperature
3.3
12
24
VCC (V)
0
20
40
60
80
100
120
140
160
180
200
220
2 6 10 14 18 22 26
tPERIOD (ms)
VCC (V)
Average Sleep Mode Period versus Supply Voltage
-40
25
150
TA(°C)
0
50
100
150
200
250
300
350
400
450
500
-60 -40 -20 020 40 60 80 100 120 140 160
VOUT(SAT) (mV)
TA(°C)
Average Output Saturation Voltage versus Ambient
Temperature for IOUT = 5 mA
3.3
12
24
VCC (V)
0
50
100
150
200
250
300
350
400
450
500
2 6 10 14 18 22 26
V
OUT(SAT)
(mV)
VCC (V)
Average Output Saturation Voltage versus Supply Voltage
for IOUT = 5 mA
-40
25
150
TA(°C)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2 6 10 14 18 22 26
I
CC
(µA)
V
CC
(V)
Average Supply Current versus Supply Voltage
(Output Off)
-40
25
85
TA(°C)
0
5
10
15
20
25
30
35
40
2 6 10 14 18 22 26
ICC (µA)
V
CC
(V)
Average Supply Current versus Supply Voltage for TA= 150°C
(Output Off)
150
TA(°C)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
-60 -40 -20 020 40 60 80 100
ICC (µA)
TA(°C)
Average Supply Current versus Ambient Temperature
(Output Off)
3.3
12
24
VCC (V)
0
20
40
60
80
100
120
140
160
180
200
220
-60 -40 -20 0 20 40 60 80 100 120 140 160
tPERIOD(ms)
TA(°C)
Average Sleep Mode Period versus Ambient Temperature
3.3 V, 12 V,
and 24 V
VCC (V)
0
50
100
150
200
250
300
350
400
450
500
-60 -40 -20 0 20 40 60 80 100 120 140 160
VOUT(SAT) (mV)
TA(°C)
Average Output Saturation Voltage versus Ambient
Temperature for IOUT = 5 mA
3.3 V, 12 V,
and 24 V
VCC (V)
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
12
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA
Magnetic Characteristics
-0xx Option
-70
-50
-30
-10
10
30
50
70
-60 -40 -20 0 20 40 60 80 100120140160
B
OP
(G)
T
A
(°C)
Average Operate Point versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
OPS
B
OPN
-70
-50
-30
-10
10
30
50
70
2 4 6 8 10 12 14 16 18 20 22 24 26
B
OP
(G)
V
CC
(V)
Average Operate Point versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
OPS
B
OPN
-50
-40
-30
-20
-10
0
10
20
30
40
50
2 4 6 8 10 12 14 16 18 20 22 24 26
B
RP
(G)
V
CC
(V)
Average Release Point versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
RPS
B
RPN
-50
-40
-30
-20
-10
0
10
20
30
40
50
-60 -40 -20 0 20 40 60 80 100120140160
B
RP
(G)
T
A
(°C)
Average Release Point versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
RPS
B
RPN
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
2 4 6 8 10 12 14 16 18 20 22 24 26
B
HYS
(G)
V
CC
(V)
Average Hysteresis versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
HYS(S)
B
HYS(N)
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
-60 -40 -20 0 20 40 60 80 100120140160
B
HYS
(G)
T
A
(°C)
Average Hysteresis versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
HYS(S)
B
HYS(N)
South
North
South
North
South
North
South
North
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
13
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA
Magnetic Characteristics
-1xx Option
-135
-120
-105
-90
-75
-60
-45
-30
-15
0
15
30
45
60
75
90
105
120
135
-60 -40 -20 020 40 60 80 100 120 140 160
B
OP
(G)
T
A
(°C)
Average Operate Point versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
OPS
B
OPN
South
North
-105
-90
-75
-60
-45
-30
-15
0
15
30
45
60
75
90
105
2 4 6 8 10 12 14 16 18 20 22 24 26
B
RP
(G)
V
CC
(V)
Average Release Point versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
RPS
B
RPN
South
North
-105
-90
-75
-60
-45
-30
-15
0
15
30
45
60
75
90
105
-60 -40 -20 020 40 60 80 100 120 140 160
B
RP
(G)
T
A
(°C)
Average Release Point versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
RPS
B
RPN
South
North
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
40
42.5
45
47.5
246810 12 14 16 18 20 22 24 26
B
HYS
(G)
V
CC
(V)
Average Hysteresis versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
HYS(S)
B
HYS(N)
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
40
42.5
45
47.5
-60 -40 -20 020 40 60 80 100 120 140 160
B
HYS
(G)
T
A
(°C)
Average Hysteresis versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
HYS(S)
B
HYS(N)
-135
-120
-105
-90
-75
-60
-45
-30
-15
0
15
30
45
60
75
90
105
120
135
2 4 6 8 10 12 14 16 18 20 22 24 26
B
OP
(G)
V
CC
(V)
Average Operate Point versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
OPS
B
OPN
South
North
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
14
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA
Magnetic Characteristics
-2xx Option
-200
-160
-120
-80
-40
0
40
80
120
160
200
-60 -40 -20 020 40 60 80 100 120 140 160
B
OP
(G)
T
A
(°C)
Average Operate Point versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
OPS
B
OPN
South
North
-200
-160
-120
-80
-40
0
40
80
120
160
200
246810 12 14 16 18 20 22 24 26
B
OP
(G)
V
CC
(V)
Average Operate Point versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
OPS
B
OPN
South
North
-200
-160
-120
-80
-40
0
40
80
120
160
200
246810 12 14 16 18 20 22 24 26
B
RP
(G)
V
CC
(V)
Average Release Point versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
RPS
B
RPN
South
North
-200
-160
-120
-80
-40
0
40
80
120
160
200
-60 -40 -20 020 40 60 80 100 120 140 160
B
RP
(G)
T
A
(°C)
Average Release Point versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
RPS
B
RPN
South
North
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
40
42.5
45
47.5
2 4 6 8 10 12 14 16 18 20 22 24 26
B
HYS
(G)
V
CC
(V)
Average Hysteresis versus Supply Voltage
-40
25
150
-40
25
150
T
A
(°C)
B
HYS(S)
B
HYS(N)
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
40
42.5
45
47.5
-60 -40 -20 020 40 60 80 100 120 140 160
B
HYS
(G)
T
A
(°C)
Average Hysteresis versus Ambient Temperature
3.3
12
24
3.3
12
24
V
CC
(V)
B
HYS(S)
B
HYS(N)
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
15
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
FUNCTIONAL DESCRIPTION
Low Average Power
The built-in micropower control periodically activates the Hall
switch circuitry for a short period of time (tAWAKE), and deacti-
vates it for the remainder of the period (tPERIOD). See Figure 4:
Micropower Operation and Power-On Behavior, for an example
of the system timing and the behavior of the device during the
power-on sequence. The short duration awake state allows for
sensor stabilization prior to sampling the Hall switch and latching
the state on the output. The output is latched on the falling edge
of the timing pulse and held in the last sampled state during the
sleep period; updates to the output only occur on the falling edge
of the timing pulse. The micropower control operates indepen-
dently of the output driver state.
Power-On Behavior
Device power-on begins when the supply voltage reaches
VCC(min). During the power-on time, tPO, the device output is off
with the exception of IOUTOFF(PO). Use of a large pull-up resis-
tor, RPULL-UP (see Figure 7), can influence the Power-On State
(POS) voltage level on the output pin during tON. The output
voltage level during the POS is a function of the pull-up resistor
and pull-up voltage. The Power-On State voltage level can be
determined by subtracting the voltage drop created by RPULL-UP
and IOUTOFF(PO) from the pull-up voltage:
VOUT = VOUT(OFF) – (IOUTOFF(PO) × RPULL-UP)
To retain a power-on output voltage level above VPULL-UP / 2,
a pull-up resistor less than or equal to 20 kΩ is recommended.
After power-on is complete and the power-on time has elapsed,
the device output will correspond with the applied magnetic field
for B > BOP and B < BRP. Powering-on the device in the hys-
teresis range (less than BOP and higher than BRP) will cause the
device output to remain off. A valid output state is attained after
the first excursion beyond BOP or BRP.
Figure 4: Micropower Operation and Power-On Behavior
t
SLEEP
t
PO
t
AWAKE
t
SLEEP
t
SLEEP
t
SLEEP
t
AWAKE
t
SLEEP
t
PO
t
t
V
V
CC
(min)
t
PO
0
Output State
Undefined for
V
CC
< V
CC
(min)
POS
On
Off
V
Output State,
“L” Polarity
Supply
Voltage
Key
POS
B > B
OP
B < B
OP
t
AWAKE
t
SLEEP
t
PO
V
Output State
Undefined for
V
CC
< V
CC
(min)
On
Off
V
Output State,
“H” Polarity
t
I
CC(DIS )
I
CC(EN )
Latch
Output
t
PERIOD
Latch
Output
Supply Current
Undefined for
V
CC
< V
CC
(min)
I
t
Supply
Current
POS
Key
POS
B > B
OP,
B
RP
< B < B
OP
B < B
RP
V
PULL-UP
(V) R
LOAD
(kΩ) V
OUT
(V) *
1 3.22
2.4 3.11
4.8 2.92
7.2 2.72
9.6 2.53
12 2.34
14.4 2.15
1 11.92
2.4 11.81
4.8 11.62
7.2 11.42
9.6 11.23
12 11.04
14.4 10.85
1 23.92
2.4 23.81
4.8 23.62
7.2 23.42
9.6 23.23
12 23.04
14.4 22.85
*V
CC
≥ V
CC
(min) and t < t
PO
3.3
12
24
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
16
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Functional Safety
The APS11700 and APS11760 were designed in
accordance with the international standard for
automotive functional safety, ISO 26262:2011.
These products achieve an ASIL (Automotive Safety Integrity
Level) rating of ASIL A according to the standard. The APS11700
and APS11760 are both classified as a SEooC (Safety Element
out of Context) and can be easily integrated into safety-critical
systems requiring higher ASIL ratings that incorporate external
diagnostics or use measures such as redundancy. Safety docu-
mentation will be provided to support and guide the integration
process. For further information, contact your local FAE for
A2-SIL™ documentation: www.allegromicro.com/ASIL.
Undervoltage Lockout Operation
The APS11700 and APS11760 have an internal diagnostic to
check the voltage supply (an undervoltage lockout regulator).
When the supply voltage falls below the undervoltage lockout
voltage, VCC(UV)EN, the device will enter reset, where the output
state returns to the High state (the Power-On State) until VCC is
increased to VCC(UV)DIS. The supply voltage monitor employed
by the undervoltage lockout circuit is only active during the
awake time. Therefore, undervoltage lockout can be enabled and
disabled only when the device is in the awake state. See Figure 5
for an example. When enabled, the supply current will be ICC(EN).
UVLO
Enabled
t
V
t
POR
Output State,
“L” Polarity
Supply
Voltage
Output State,
“H” Polarity
I
Supply
Current*
V
CC
(min)
V
CC(UV )DIS
V
CC(UV)EN
Power-Off
V
t
t
I
CC(DIS )
I
CC(EN)
Low
High
Key
POS
B > B
OP,
B
RP
< B < B
OP
B < B
RP
Key
POS
B > B
OP
B < B
OP
V
t
Low
High
*Micropower Duty Cycle and Period Not to Scale
POS
POS
Figure 5: Undervoltage Lockout Behavior
Once VCC is restored to above VCC(UV)DIS, the power-on
sequence begins and the output will correspond with the applied
magnetic field for B > BOP and B < BRP after tPOR has elapsed.
In the case the supply voltage does not return to these operational
levels, or if the applied magnetic field is within the hysteresis
range, the output will remain in the power-on state.
Operation
The APS11700 and APS11760 are integrated Hall-effect sensor
ICs with an open-drain output. Table 1 offers a guide for select-
ing the output polarity configuration, further explained in the
configuration sections below. The output is an open-drain NMOS
transistor that actuates in response to a magnetic field. The direc-
tion of the applied magnetic field is perpendicular to the branded
face for the APS11700, and parallel with the branded face for
the APS11760; see Figure 6 for an illustration. The devices are
offered in two packages: the UA package, a 3-pin through-hole
mounting configuration, or in the LH package, a 3-pin surface-
mount configuration. See the Selection Guide for a complete list
of available options.
Configurations xSLx and xSHx. The unipolar output of these
devices is actuated when a south-polarity magnetic field perpen-
dicular to the Hall element exceeds the operate point threshold,
BOPS. When BOPS is exceeded, the xSLx output turns on (goes
Figure 6: Magnetic Sensing Orientations
APS11700 LH (Panel A), APS11700 UA (Panel B),
APS11760 LH (Panel C) and APS11760 UA (Panel D)
2
-
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
17
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
low). The xSHx is complementary, in that for this device the
output turns off (goes high) when BOPS is exceeded. When the
magnetic field is removed or reduced below the release point,
BRPS, the device outputs return to their original state—off for
the xSLx and on for the xSHx. See Figure 3 for unipolar south
switching behavior.
Configurations xNLx and xNHx. The unipolar output of these
devices is actuated when a north-polarity magnetic field perpen-
dicular to the Hall element exceeds the operate point threshold,
BOPN. When BOPN is exceeded, the xNLx output turns on (goes
low). The xNHx is complementary, in that for this device the
output turns off (goes high) when BOPN is exceeded. When the
magnetic field is removed or reduced below the release point,
BRPN, the device outputs return to their original state—off for
the xNLx and on for the xNHx. See Figure 3 for unipolar north
switching behavior.
Table 1: Switch Polarity Configuration Options
Part
Number
Suffix
Operating
Mode
Output
State for
B > BOP
Output
State for B
= 0 G
Power-On
State,
t < tPO
xSLx Unipolar
South Low High High
xSHx Unipolar
South High Low High
xNLx Unipolar
North Low High High
xNHx Unipolar
North High Low High
xPLx Omnipolar Low High High
xPHx Omnipolar High Low High
Configurations xPLx and xPHx. The omnipolar operation of
these devices allows actuation with either a north or a south
polarity field. The xPLx operates using the standard output polar-
ity convention. Fields exceeding the operating points, BOPS or
BOPN, will turn the output on (low). When the magnetic field is
removed or reduced below the release point, BRPN or BRPS, the
device output turns off (goes high). The xPHx is complementary,
in that for the device, a north or south polarity field exceeding
the operate points, BOPS or BOPN, will turn the output off (high).
Removal of the field, or reduction below the release point thresh-
old, BRPS or BRPN, will turn the output on (low). See Figure 3 for
omnipolar switching behavior.
After turn-on, the output transistor is capable of sinking current
up to the short circuit current limit, IOM, which is a minimum of
15 mA. The difference in the magnetic operate and release points
is the hysteresis, BHYS, of the device. This built-in hysteresis
allows clean switching of the output even in the presence of
external mechanical vibration and electrical noise.
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
18
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Applications
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to guarantee correct performance
under harsh environmental conditions and to reduce noise from
internal circuitry. As is shown in Figure 7: Typical and Enhanced
Protection Application Circuits, a 0.1 µF capacitor is required.
In applications where the APS11700 or APS11760 receives
its power from an unregulated source such as a car battery, or
where greater immunity is required, additional measures may
be employed. Specifications for such transients will vary, so
protection circuit design should be optimized for each application.
For example, the circuit shown in Figure 7 includes an optional
series resistor and output capacitor which improves performance
during Powered ESD testing (ISO 10605), Conducted Immunity
(ISO 7637-2 and ISO 16750-2), and Bulk Current Injection
testing (ISO 11452-4).
Figure 7: Typical and Enhanced
Protection Application Circuits
Recommended RPULL-UP ≤ 20 kΩ.
See Power-On Behavior section.
V
OUT
C
BYP
0.1 µF
R
PULL-UP
4.8 kΩ
C
OUT
4.7 nF
R
S
100 Ω
V
PULL-UP
APS117xx
VCC VOUT
GND
V
SUPPLY
V
OUT
C
BYP
0.1 µF
R
PULL-UP
4.8 kΩ
APS117xx
VCC VOUT
GND
Typical Applications Circuit
Enhanced Protection Circuit
(3.3 to 24 V)
V
SUPPLY
(3.3 to 24 V) (≤ 24 V)
Extensive applications information for Hall-effect devices is
available in:
• Hall-Effect IC Applications Guide, AN27701,
• Hall-Effect Devices: Guidelines for Designing Subassemblies
Using Hall-Effect Devices AN27703.1
• Soldering Methods for Allegro’s Products – SMD and Through-
Hole, AN26009
All are provided on the Allegro website:
www.allegromicro.com
Vertical Hall-Effect Sensor Linear Tools
System design and magnetic sensor evaluation often require an in-
depth look at the overall strength and profile generated by a mag-
netic field input. To aid in this evaluation, Allegro MicroSystems
provides a high-accuracy linear output tool capable of reporting
the non-perpendicular magnetic field by means of an vertical
Hall-effect sensor IC equipped with a calibrated analog output.
For further information, contact your local Allegro field applica-
tions engineer or sales representative.
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
19
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Amp
Clock/Logic
Hall Element
Sample and
Hold
Low-Pass
Filter
Regulator
A limiting factor for switchpoint accuracy when using Hall-effect
technology is the small signal voltage developed across the Hall
plate. This voltage is proportionally small relative to the offset
that can be produced at the output of the Hall sensor. This makes
it difficult to process the signal and maintain an accurate, reliable
output over the specified temperature and voltage range. Chopper
stabilization is a proven approach used to minimize Hall offset.
The technique, dynamic quadrature offset cancellation, removes
key sources of the output drift induced by temperature and pack-
age stress. This offset reduction technique is based on a signal
modulation-demodulation process. Figure 8: Model of Chopper
Stabilization Circuit (Dynamic Offset Cancellation) illustrates
how it is implemented.
The undesired offset signal is separated from the magnetically
induced signal in the frequency domain through modulation. The
subsequent demodulation acts as a modulation process for the
offset causing the magnetically induced signal to recover its
original spectrum at baseband while the DC offset becomes a
high-frequency signal. Then, using a low-pass filter, the signal
passes while the modulated DC offset is suppressed. Allegro’s
innovative chopper-stabilization technique uses a high-frequency
clock.
The high-frequency operation allows a greater sampling rate
that produces higher accuracy, reduced jitter, and faster signal
processing. Additionally, filtering is more effective and results
in a lower noise analog signal at the sensor output. Devices such
as the APS11700 and APS11760 that use this approach have an
extremely stable quiescent Hall output voltage, are immune to
thermal stress, and have precise recoverability after temperature
cycling. This technique is made possible through the use of a
BiCMOS process which allows the use of low offset and low
noise amplifiers in combination with high-density logic and
sample-and-hold circuits.
Figure 8: Model of Chopper Stabilization Circuit
(Dynamic Oset Cancellation)
CHOPPER STABILIZATION
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
20
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
0.55 REF
Gauge Plane
Seating Plane
0.25 BSC
0.95 BSC
0.95
1.00
0.70
2.40
2
1
AActive Area Depth, 0.28 mm REF
B
C
B
Reference land pattern layout
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to meet application process requirements and PCB layout tolerances
Branding scale and appearance at supplier discretion
A
PCB Layout Reference View
Branded Face
CStandard Branding Reference View
1
A09
2.90 +0.10
–0.20
4°±4°
8X 10° REF
0.180+0.020
–0.053
0.05 +0.10
–0.05
0.25 MIN
1.91 +0.19
–0.06
2.98 +0.12
–0.08
1.00 ±0.13
0.40 ±0.10
For Reference Only; not for tooling use (reference DWG-2840)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
DHall element, not to scale
D
D
D
1.49
0.96
3
Package LH, 3-Pin SMD (SOT23W)
APS11700
(Reference DWG-2840)
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
21
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Package UA, 3-Pin SIP
APS11700
(Reference DWG-9065)
2 31
1.27 NOM
1.02
MAX
45°
45°
C
1.52 ±0.05
B
Gate and tie bar burr area
A
B
C
Dambar removal protrusion (6X)
A
D
E
E
E
1.44
2.04
E
Active Area Depth, 0.50 mm REF
Branding scale and appearance at supplier discretion
Hall element (not to scale)
For Reference Only; not for tooling use (reference DWG-9065)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
Mold Ejector
Pin Indent
DStandard Branding Reference View
A10
1
0.41 +0.03
–0.06
0.43 +0.05
–0.07
14.99 ±0.25
4.09 +0.08
–0.05
3.02 +0.08
–0.05
0.79 REF
10°
Branded
Face
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
22
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
0.55 REF
Gauge Plane
Seating Plane
0.25 BSC
0.95 BSC
0.95
1.00
0.70
2.40
2
1
AActive Area Depth, 1.32 mm
B
C
B
Reference land pattern layout
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to meet application process requirements and PCB layout tolerances
Branding scale and appearance at supplier discretion
A
PCB Layout Reference View
Branded Face
CStandard Branding Reference View
1
AAD
2.90 +0.10
–0.20
4°±4°
8X 10° REF
0.180+0.020
–0.053
0.05 +0.10
–0.05
0.25 MIN
1.91 +0.19
–0.06
2.98 +0.12
–0.08
1.00 ±0.13
0.40 ±0.10
For Reference Only; not for tooling use (reference DWG-2840)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
DHall element, not to scale
D
D
0.96
3
Package LH, 3-Pin SMD (SOT23W)
APS11760
(Reference DWG-2840)
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
23
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Package UA, 3-Pin SIP
APS11760
(Reference DWG-9065)
2 31
1.27 NOM
1.02
MAX
45°
45°
1.52 ±0.05
B
Gate and tie bar burr area
A
B
C
Dambar removal protrusion (6X)
A
D
E
C
E2.04
E
Active Area Depth, 1.27 mm
Branding scale and appearance at supplier discretion
Hall element (not to scale)
For Reference Only; not for tooling use (reference DWG-9065)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
Mold Ejector
Pin Indent
DStandard Branding Reference View
AAD
1
0.41 +0.03
–0.06
0.43 +0.05
–0.07
14.99 ±0.25
4.09 +0.08
–0.05
3.02 +0.08
–0.05
0.79 REF
10°
Branded
Face
Micropower Vertical and Planar
Hall-Effect Switches
APS11700
and APS11760
24
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
For the latest version of this document, visit our website:
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Copyright ©2019, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its
use; nor for any infringement of patents or other rights of third parties which may result from its use.
Copies of this document are considered uncontrolled documents.
Revision History
Number Date Description
– November 1, 2018 Initial release
1 November 26, 2018 Updated footnote (page 4) and Figure 7 (page 16)
2 February 11, 2019 Updated Selection Guide (page 3) and ESD Performance table (page 4);
added Magnetic Characteristics -1xx and -2xx plots (pages 13-14)
