A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 200 mA 65 V
BVCES IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 200 mA 5.0 200 ---
COB VCB = 30 V f = 1.0 MHz 15 pF
PG
η
ηη
ηC VCC = 28 V POUT = 10 W f = 175 MHz
PIN = 1.0 W
10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB10-28F
DESCRIPTION:
The ASI VHB10-28F is an NPN RF power
transistor designed for 138- 175 MHz VHF
communications applicat ions. It utilizes emitter
ballasting t o pr ovide hig h VSWR handling
capability.
FEATURES:
• Common Emitter
• PG = 10 dB at 10 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.0 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 13.0 W @ T C = 25 ° C
TJ -65 °C to +200 °C
TSTG -65 °C to +150°C
θ
θθ
θJC 13.5 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10721
MINIMUM
inches / mm
.970 / 24.6 4
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.8 9
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.9 4
F
B
G
.125
Ø.125 NOM .
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.2 9 .730 / 18.5 4
C
B
E
E
