SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP36C. G Icmax:25A. L D d MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 25 A Base Current IB 5.0 A PC 125 W Tj 150 Tstg -55 150 Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC P 1 P 2 T M 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 3.2 + 0.6+0.3/-0.1 1. BASE 2. COLLECTOR 3. EMITTER TO-3P(N) ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A V(BR)CEO IC=50mA, IB=0 100 - - V hFE(1) (Note) VCE=5V, IC=1.5A 55 - 160 hFE(2) VCE=4V, IC=15A 15 - - VCE(sat)(1) IC=15A, IB=1.5A - - 1.8 VCE(sat)(2) IC=25A, IB=5.0A - - 4.0 Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V Transition Frequency fT VCE=5V, IC=1A 3.0 - - MHz Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Note : hFE(1) Classification R:55~110, 2001. 1. 18 V O:80~160 Revision No : 3 1/2 TIP35C 2001. 1. 18 Revision No : 3 2/2