2001. 1. 18 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP35C
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 3
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 75W Audio Frequency
Amplifier Output Stage.
Complementary to TIP36C.
Icmax:25A.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
PPT
M
J
Q
123
A 15.9 MAX
MILLIMETERSDIM
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F 1.0
G 3.3 MAX
H9.0
I4.5
J2.0
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
QΦ3.2 0.2
T 0.6+0.3/-0.1
2.8M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
Collector-emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
DC Current Gain
hFE(1) (Note) VCE=5V, IC=1.5A 55 - 160
hFE(2) VCE=4V, IC=15A 15 - -
Collector-Emitter Saturation Voltage
VCE(sat)(1) IC=15A, IB=1.5A - - 1.8
V
VCE(sat)(2) IC=25A, IB=5.0A - - 4.0
Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V
Transition Frequency fTVCE=5V, IC=1A 3.0 - - MHz
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC25 A
Base Current IB5.0 A
Collector Power Dissipation
(Tc=25 )
PC125 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
Note : hFE(1) Classification R:55~110, O:80~160
2001. 1. 18 2/2
TIP35C
Revision No : 3
