OMS410 OMS410A OMS510 3 PHASE, LOW VOLTAGE, LOW Ropsvon), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase. 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES Three Phase Power Switch Configuration Zener Gate Protection 10 Miliohm Shunt Resistor Linear Thermal Sensor Isolated Low Profile Package Output Currents Up To 45 Amps DESCRIPTION This series of MOSFET switches is configured in a 3 phase bridge with a common Vop line, precision series shunt resistor in the source line, and a sensing element to monitor the substrate temperature. This device is ideally suited for Motor Control applications where size, performance, and efficiency are key. MAXIMUM RATINGS (@ 25C) Part Vos Rosvon) Ip Package Number (Volts) (mo) (Amps) OMS410 100 85 15 MP-3 OMS410A 100 85 20 MP-3 OMS510 100 42 45 MP-3 SCHEMATIC 2 1 6 5 10 9 7 oe oo 32, 33, 34 : 5 i Oy | ' x - | 23, 24, 25 ee rvceeseecff ees f=} 18,20 34 78 ni2 13 14 411R0 2.1 - 53 Omnirel & OMS410, OMS410A, OMS510 ABSOLUTE MAXIMUM RATINGS (T, = 25C unless otherwise noted) Parameter OMS410 | OMS410A) OMS510 | Units Vps Drain-Source Voltage 100 100 100 Vv Voor Drain-Gate Voltage (Rgg = 1 mQ) 100 100 100 Vv lp @ Ty = 25C Continuous Drain Current 15 20 45 A lp @ Tg = 70C Continuous Drain Current 11 16 45 A tom Pulsed Drain Current? 110 110 180 A Pp @ T, = 25C Maximum Power Dissipation 2 33 33 66 Ww Pp @ T, = 70C Maximum Power Dissipation 2 18 18 36 Ww Junction-To-Case Linear Derating Factor 0.33 0.33 0.66 WC Thermal Resistance Junction-To-Case 3.0 3.0 1.5 CNV Sense Resistor 0.010 0.010 0.010 Ohms Note 1: Pulse Test: Pulse width < 300 sec. Duty Cycle < 1.5%. Note 2: Maximum Junction Temperature equal to 125C. ELECTRICAL CHARACTERISTICS: OMS410 (7, = 25 unless otherwise specified) Ch Test Conditions Symbol | min. | typ. [| Max. [unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage, Ip = 250 YA, Veg = 0 Veross 100 - - Vv Zero Gate Voltage Drain Current = Vos, Vos = Max. Rat. loss - - 10 pA Vos = Max. Rat. x 0.8, T. = 70C : : 100 yA Gate-Body Leakage, Vog = 12 V loss : : 500 nA ON CHARACTERISTICS Gate- Threshold Voltage, Vos = Ves: Ip = 250 pA Vosn 2.0 - 40 Vv Static Drain-Source On-Resistance, Veg = 10 Vde, Ip = 9.0A Floson : - 0.058 Q To = 70C : - 0.1 Q On State Drain Curremt, Vos, > Injen) X Rosin MAX., Vigg = 10 loon 15 A DYNAMIC CHARACTERISTICS Forward Transconductance Vos > Ipvons X Rogion) Max., Ip = 9.0 A, Ge 9.0 - : mho Input Capacitance Vos = 25 V, Cus 2600 pF Output Capacitance Ves = 0, Coss S10 pF Reverse Transfer Capacitance f=1.0mHz Cus 360 oF SWITCHING CHARACTERISTICS Tum-On Deiay Time toon 36 ns Rise Time Vop = 100 V, Ip = 15 A, t 290 ns Tum-Off Delay Time Res = 10 2, Veg = 10 V Toot 85 ns Fall Time 4 120 ns SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current Isp : - 14 A Source - Drain Current (Pulsed) leo - - 56 A Forward On-Voltage Ign = 28 A, Vas = 0, Vsp - - 25 v Reverse Recovery Time Isp = 13 A, didt = 100 AjpSec L - 133 - ns Reverse Recovered Charge Q, - 0.85 - uc RESISTOR CHARACTERISTICS Resistor Tolerance Ry 9.0 10 " mQ Temperature Coefficient, -40C to +70C T. - 100 ppm * indicates Pulse Test < 300 sec, Duty Cycle < 1.5% Omnirel & 21-54 ELECTRICAL CHARACTERISTICS: OMS520 (1, = 25 unless otherwise specified) OMS410, OMS410A, OMS510 [ Characteristic {Symbol [| Min, [| Typ | Max. | unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage, Ip = 250 UA, Ves = 0 Visross 100 Vv Zero Gate Voltage Drain Current = Vag, Vg = Max. Raat. loss 10 Vog = Max. Rat x 0.8, T, = 70C 100 yA Gate-Body Leakage, Vas = +12 V less +500 nA ON CHARACTERISTICS Gate- Threshold Voltage, Veg = Vos, Ip = 250 pA Vesins 20 40 Vv Static Drain-Source On-Resistance, Ve, = 10 Vde, lb = 10A Roser, 0.058 a T; = 70C 0.100 2 On State Drain Current, Vos > ltjon X Rosia) Max.. Vas = 10 loony 20 A DYNAMIC CHARACTERISTICS os > SWITCHING CHARACTERISTICS Tum-On Delay Time toon 35 ns Rise Time Voo = 160 V, Ip =20A, t 290 ns Tum-Off Delay Time Pgs = 10 9, Veg = 10 V tearm 85 ns Fall Time t 120 ns SOURCE DRAIN DIODE CHARACTERISTICS Isp = 28 A. Veg = 0, len = 20 A, didt = 100 A/pSec 2.4 | RESISTOR CHARACTERISTICS Resistor Tolerance A, 9.0 10 1 mo Temperature Coefficient, -40C to +70C Ty 100 pom * Indicates Pulse Test < 300 usec, Duty Cycle < 1.5%. 1 rt 21-55 Omnirel & OMS410, OMS410A, OMS510 ELECTRICAL CHARACTERISTICS: OMS510 (1, = 25 unless otherwise specified) | Characteristic | Symbot [| min, | typ. | max | unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage, ly = 250 HA, Vas = 0 Veeross 100 - Vv Zera Gate Voliage Drain Current = Vg, Vog = Max. Rat. loss 20 HA Vos = Max. Rat. x 0.8, T, = 70C 200 pA Gate-Body Leakage, Vas = 12 V less +500 nA ON CHARACTERISTICS Gate-Threshold Voltage, Vos = Vos. Ip = 250 pA Vesa 2.0 4.0 Vv Static Drain-Source On-Resistance, Veg = 10 Vde, lp = 22.5 A Poston 0.029 2 Te = 70C 0.050 Q On State Drain Current, Vos > lovom X Rosion Max., Vas = 10 lorons 45 A DYNAMIC CHARACTERISTICS Forward Transconductance Vos > loon X Rosco Max., Ip = 40 A Os 18 mho Input Capacitance Vog = 100 V, Cas 5200 pF Output Capacitance Vos = 0, Coss 1820 pF Reverse Transfer Capacitance f= 1.0mHz Crs 700 pF SWITCHING CHARACTERISTICS Tum-On Delay Time feo 70 ns Rise Time Voo = 100 V, lp =45 A, t 5380 ns Tum-Off Delay Time Res = 10.92, Vas = 10 V, exam 170 ns Fall Time t 240 ns SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current Isp 45 A Source - Drain Current (Pulsed) Leona 120 A Forward On-Voltage Igo = 45 A, Vog = 9, Veo 25 Vv Reverse Recovery Time Ign = 45 A, ty 240 ns Reverse Recovered Charge didt = 100 AypSec Qa 1.605 pC RESISTOR CHARACTERISTICS Resistor Tolerance Rs 9.0 10 11 mQ Temperature Coefficient, -40C to +70C Te 100 ppm * Indicates Pulse Test < 300 psec, Duty Cycle <1.5%. Mechanical Outline . Te, | Pin1: Gate Q1 Pin 34: Vp 205 "es | Pin 2: Source Q1 Pin 33: Vop F"An p- Pin3: Gate Q2 Pin 32: Vop =| TO | Pin 4: Source Q2 Pin 31: Output Phase A ae eed L__, Pin5: Gate Q3 Pin 30: Output Phase A paris. S44 Pin6: Source Q3 Pin 29: Output Phase A 1 Eel, | Pin7: Gate Q4 Pin 28: Output Phase B = =e Pin8: Source Q4 Pin 17: Output Phase B 2 450 = = 3.000 4 000 Pind: Gate Q5 Pin 26: Output Phase B = = | | Pin 10: Source Q5 Pin 25: Output Phase C L = = | Pin 11: Gate Q6 Pin 24: Output Phase C += Pin 12: Source Q6 Pin 23: Output Phase C i = | Pin 13: +Sense Res. Pin 22: +PTC et | 0 Pin 14: -Sense Res. Pin 21: -PTC Pin 15: Power GND Pin 20: Power GND jo ono Pin 16: Power GND Pin 19: Power GND non et art Pin 17: PowerGND _Pin 18: Power GND f Notes: *Contact factory for lead bending options. *Mounting Recommendations: Maximum Mounting Torque: 3.0 mN. The module must be attached to a flat heat sink (flatness 100um maximum). : | Omnirel 104 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246