IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGP20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
GCE
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IGP20N60H3 600V 20A 1.95V 175°C G20H603 PG-TO220-3
3
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC40.0
20.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 80.0 A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs - 80.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 170.0
85.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.88 K/W
Thermal resistance
junction - ambient Rth(j-a) 62 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.95
2.30
2.50
2.40
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE 4.1 5.1 5.7 V
Zero gate voltage collector current ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
1500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 10.9 - S
5
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1100 -
Output capacitance Coes - 70 -
Reverse transfer capacitance Cres - 32 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=20.0A,
VGE=15V - 120.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
120
- A
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 16 - ns
Rise time tr- 20 - ns
Turn-off delay time td(off) - 194 - ns
Fall time tf- 11 - ns
Turn-on energy Eon - 0.45 - mJ
Turn-off energy Eoff - 0.24 - mJ
Total switching energy Ets - 0.69 - mJ
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKP20N60H3) reverse
recovery.
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 16 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 227 - ns
Fall time tf- 14 - ns
Turn-on energy Eon - 0.60 - mJ
Turn-off energy Eoff - 0.36 - mJ
Total switching energy Ets - 0.96 - mJ
Tvj=175°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKP20N60H3) reverse
recovery.
6
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=14,6Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0
10
20
30
40
50
60
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
7
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345678
0
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
5 6 7 8 9 10 11 12
0
10
20
30
40
50
60
70
Tj=25°C
Tj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC=10A
IC=20A
IC=40A
8
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 30 35 40
10
100
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 10 15 20 25 30 35 40 45 50
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
td(off)
tf
td(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.29mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
min.
max.
9
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
4 8 12 16 20 24 28 32 36 40
0.0
0.5
1.0
1.5
2.0
2.5
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 10 15 20 25 30 35 40 45 50
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Eoff
Eon
Ets
10
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Figure 17. Typicalgatecharge
(IC=20A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100 120 140
0
2
4
6
8
10
12
14
16
120V
480V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 10 20 30
10
100
1000
Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
10 12 14 16 18 20
50
100
150
200
250
300
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 11 12 13 14 15
0
3
6
9
12
15
11
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.07041042
9.6E-5
2
0.3070851
6.8E-4
3
0.3198984
0.01084623
4
0.1871538
0.06925485
12
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
PG-TO220-3
13
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
t
a
a
b
b
t
d(off)
t
f
t
r
t
d(on)
90% I
C
10% I
C
90% I
C
10% I
C
t
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
t
t
1
t
4
2% I
C
10% V
GE
2% V
CE
t
2
t
3
14
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.2,2014-03-11
RevisionHistory
IGP20N60H3
Revision:2014-03-11,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-02-01 -
1.2 2010-07-26 Preliminary datasheet
2.1 2013-12-09 New value IRmax limit at 175°C
2.2 2014-03-11 Max ratings Vce, Tvj ≥ 25°C
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.