LTC5590 Dual 600MHz to 1.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.7dB at 900MHz IIP3: 26dBm at 900MHz Noise Figure: 9.7dB at 900MHz 15.6dB NF Under 5dBm Blocking High Input P1dB 53dB Channel Isolation at 900MHz 1.3W Power Consumption at 3.3V Low Power Mode for <0.8W Consumption Enable Pins for Each Channel 50 Single-Ended RF and LO Inputs LO Input Matched In All Modes 0dBm LO Drive Level Small Package and Solution Size -40C to 105C Operation The LTC(R)5590 is part of a family of dual-channel high dynamic range, high gain downconverting mixers covering the 600MHz to 4.5GHz RF frequency range. The LTC5590 is optimized for 600MHz to 1.7GHz RF applications. The LO frequency must fall within the 700MHz to 1.5GHz range for optimum performance. A typical application is a LTE or GSM receiver with a 700MHz to 915MHz RF input and high side LO. The LTC5590's high conversion gain and high dynamic range enable the use of lossy IF filters in high selectivity receiver designs, while minimizing the total solution cost, board space and system-level variation. A low current mode is provided for additional power savings and each of the mixer channels has independent shutdown control. APPLICATIONS n n n High Dynamic Range Dual Downconverting Mixer Family 3G/4G Wireless Infrastructure Diversity Receivers (LTE, CDMA, GSM) MIMO Infrastructure Receivers High Dynamic Range Downmixer Applications PART NUMBER RF RANGE LO RANGE LTC5590 600MHz to 1.7GHz 700MHz to 1.5GHz LTC5591 1.3GHz to 2.3GHz 1.4GHz to 2.1GHz LTC5592 1.6GHz to 2.7GHz 1.7GHz to 2.5GHz LTC5593 2.3GHz to 4.5GHz 2.1GHz to 4.2GHz L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION Wideband Receiver 190MHz SAW 1nF VCCIF 3.3V or 5V 1F 22pF 150nH 190MHz BPF IF AMP 1nF 150nH Wideband Conversion Gain NF and IIP3 vs IF Frequency (Mixer Only, Measured on Evaluation Board) ADC 27 13 IF AMP RF 700MHz TO 915MHz BIAS LO AMP IMAGE BPF 100pF RF 700MHz TO 915MHz ENA (0V/3.3V) ENA RFA LNA 10pF LO 1090MHz LO SYNTH ENB (0V/3.3V) IFB+ BIAS IFB- VCCB 150nH 1nF 23 GC 8 22 21 LO = 1090MHz PLO = 0dBm RF = 900 30MHz TEST CIRCUIT IN FIGURE 1 170 180 200 190 IF FREQUENCY (MHz) 20 210 19 220 5590 TA01b 22pF 150nH 1nF 190MHz SAW 22pF 24 NF 9 5 160 VCC VCCIF 25 10 6 ENB IF AMP 26 11 7 LO AMP RFB LNA 1F IIP3 (dBm) IMAGE BPF 100pF 22pF VCCA IFA- IIP3 12 GC (dB), SSB NF (dB) IFA+ VCC 3.3V 190MHz BPF IF AMP ADC 5590 TA01a 5590f 1 LTC5590 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Note 1) Supply Voltage (VCC) ...............................................4.0V IF Supply Voltage (VCCIF) .........................................5.5V Enable Voltage (ENA, ENB) ..............-0.3V to VCC + 0.3V Bias Adjust Voltage (IFBA, IFBB) ......-0.3V to VCC + 0.3V Power Select Voltage (ISEL) .............-0.3V to VCC + 0.3V LO Input Power (300MHz to 3GHz) ........................9dBm LO Input DC Voltage............................................... 0.1V RFA, RFB Input Power (300MHz to 3GHz) ...........15dBm RFA, RFB Input DC Voltage .................................... 0.1V Operating Temperature Range (TC) ........ -40C to 105C Storage Temperature Range .................. -65C to 150C Junction Temperature (TJ) .................................... 150C VCCA IFBA IFA- IFA+ IFGNDA GND TOP VIEW 24 23 22 21 20 19 RFA 1 18 ISEL CTA 2 17 ENA GND 3 16 LO 25 GND GND 4 15 GND 13 GND VCCB IFBB 9 10 11 12 IFB- 8 IFB+ 7 GND 14 ENB RFB 6 IFGNDB CTB 5 UH PACKAGE 24-LEAD (5mm w 5mm) PLASTIC QFN TJMAX = 150C, JC = 7C/W EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LTC5590IUH#PBF LTC5590IUH#TRPBF 5590 24-Lead (5mm x 5mm) Plastic QFN -40C to 105C Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ DC ELECTRICAL CHARACTERISTICS unless otherwise noted. Test circuit shown in Figure 1. (Note 2) PARAMETER VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25C, CONDITIONS MIN TYP MAX UNITS VCCA, VCCB Supply Voltage (Pins 12, 19) 3.1 3.3 3.5 V VCCIFA, VCCIFB Supply Voltage (Pins 9, 10, 21, 22) 3.1 3.3 5.3 V Power Supply Requirements (VCCA, VCCB, VCCIFA, VCCIFB) Mixer Supply Current (Pins 12, 19) Both Channels Enabled 188 242 mA IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 191 242 mA Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 379 484 mA Total Supply Current - Shutdown ENA = ENB = Low 500 A Enable Logic Input (ENA, ENB) High = On, Low = Off ENA, ENB Input High Voltage (On) 2.5 V ENA, ENB Input Low Voltage (Off) ENA, ENB Input Current -0.3V to VCC + 0.3V -20 0.3 V 30 A Turn On Time 0.9 s Turn Off Time 1 s 5590f 2 LTC5590 DC ELECTRICAL CHARACTERISTICS unless otherwise noted. Test circuit shown in Figure 1. (Note 2) PARAMETER VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25C, CONDITIONS MIN TYP MAX UNITS Low Current Mode Logic Input (ISEL) High = Low Power, Low = Normal Power Mode ISEL Input High Voltage 2.5 V ISEL Input Low Voltage ISEL Input Current -0.3V to VCC + 0.3V -20 0.3 V 30 A 159 mA Low Current Mode Current Consumption (ISEL = High) Mixer Supply Current (Pins 12, 19) Both Channels Enabled 123 IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 116 146 mA Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 239 305 mA AC ELECTRICAL CHARACTERISTICS VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25C, PLO = 0dBm, PRF = -3dBm (f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4) PARAMETER CONDITIONS MIN LO Input Frequency Range RF Input Frequency Range Low Side LO High Side LO TYP MAX UNITS 700 to 1500 MHz 1100 to 1700 600 to 1100 MHz MHz 5 to 500 MHz IF Output Frequency Range Requires External Matching RF Input Return Loss ZO = 50, 700MHz to 1400MHz >12 dB LO Input Return Loss ZO = 50, 700MHz to 1500MHz >12 dB IF Output Impedance Differential at 190MHz 380||2.2pF R||C LO Input Power fLO = 700MHz to 1500MHz LO to RF Leakage fLO = 700MHz to 1500MHz <-36 dBm LO to IF Leakage fLO = 700MHz to 1500MHz <-26 dBm RF to LO Isolation fRF = 600MHz to 1700MHz >56 dB RF to IF Isolation fRF = 600MHz to 1700MHz >17 dB Channel-to-Channel Isolation fRF = 600MHz to 1200MHz fRF = 1200MHz to 1700MHz >50 >45 dB dB -4 0 6 dBm High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF PARAMETER CONDITIONS MIN TYP Conversion Gain RF = 700MHz RF = 900MHz RF = 1100MHz 7.0 8.6 8.7 8.5 dB dB dB RF = 900 30MHz, LO = 1090MHz, IF = 190 30MHz 0.25 dB Conversion Gain vs Temperature TC = -40C to 105C, RF = 1950MHz -0.006 dB/C Input 3rd Order Intercept RF = 700MHz RF = 900MHz RF = 1100MHz 25.3 26.0 24.8 dBm dBm dBm 9.3 9.7 9.9 dB dB dB Conversion Gain Flatness SSB Noise Figure RF = 700MHz RF = 900MHz RF = 1100MHz 23.5 MAX UNITS 5590f 3 LTC5590 AC ELECTRICAL CHARACTERISTICS VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25C, PLO = 0dBm, PRF = -3dBm (f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3) High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF PARAMETER CONDITIONS MIN SSB Noise Figure Under Blocking fRF = 900MHz, fLO = 1090MHz, fBLOCK = 800MHz PBLOCK = 5dBm PBLOCK = 10dBm TYP MAX UNITS 15.6 21.2 dB dB 2LO-2RF Output Spurious Product (fRF = fLO - fIF/2) fRF = 995MHz at -10dBm, fLO = 1090MHz, fIF = 190MHz -77 dBc 3LO-3RF Output Spurious Product (fRF = fLO - fIF/3) fRF = 1026.67MHz at -10dBm, fLO = 1090MHz, fIF = 190MHz -77 dBc Input 1dB Compression fRF = 900MHz, VCCIF = 3.3V fRF = 900MHz, VCCIF = 5V 10.7 14.1 dBm dBm Low Power Mode, High Side LO Downmixer Application: ISEL = High, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF PARAMETER CONDITIONS MIN TYP MAX UNITS Conversion Gain RF = 900MHz 7.7 dB Input 3rd Order Intercept RF = 900MHz 21.5 dBm SSB Noise Figure RF = 900MHz 9.9 dB Input 1dB Compression RF = 900MHz, VCCIF = 3.3V RF = 900MHz, VCCIF = 5V 10.4 10.9 dBm dBm Low Side LO Downmixer Application: ISEL = Low, RF = 1100MHz to 1600MHz, IF = 190MHz, fLO = fRF - fIF PARAMETER CONDITIONS Conversion Gain RF = 1200MHz RF = 1400MHz RF = 1600MHz Conversion Gain Flatness MIN TYP MAX UNITS 8.6 8.4 7.7 dB dB dB RF = 1400 30MHz, LO = 1210MHz, IF = 190 30MHz 0.22 dB Conversion Gain vs Temperature TC = -40C to 105C, RF = 1400MHz -0.008 dB/C Input 3rd Order Intercept RF = 1200MHz RF = 1400MHz RF = 1600MHz 27.5 27.3 27.2 dBm dBm dBm SSB Noise Figure RF = 1200MHz RF = 1400MHz RF = 1600MHz 9.9 9.7 10.4 dB dB dB SSB Noise Figure Under Blocking fRF = 1400MHz, fLO = 1210MHz, fBLOCK = 1500MHz PBLOCK = 5dBm PBLOCK = 10dBm 15.0 20.8 dB dB 2RF-2LO Output Spurious Product (fRF = fLO + fIF/2) fRF = 1305MHz at -10dBm, fLO = 1210MHz, fIF = 190MHz -72 dBc 3RF-3LO Output Spurious Product (fRF = fLO + fIF/3) fRF = 1273.33MHz at -10dBm, fLO = 1210MHz, fIF = 190MHz -72 dBc Input 1dB Compression RF = 1400MHz, VCCIF = 3.3V RF = 1400MHz, VCCIF = 5V 11.0 14.4 dBm dBm Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC5590 is guaranteed functional over the case operating temperature range of -40C to 105C. (JC = 7C/W) Note 3: SSB Noise Figure measured with a small-signal noise source, bandpass filter and 6dB matching pad on RF input, bandpass filter and 6dB matching pad on the LO input, and no other RF signals applied. Note 4: Channel A to channel B isolation is measured as the relative IF output power of channel B to channel A, with the RF input signal applied to channel A. The RF input of channel B is 50 terminated and both mixers are enabled. 5590f 4 LTC5590 TYPICAL AC PERFORMANCE CHARACTERISTICS High Side LO VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25C, PLO = 0dBm, PRF = -3dBm (-3dBm/tone for two-tone IIP3 tests, f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1. Conversion Gain and IIP3 vs RF Frequency 17 16 26 16 15 15 14 22 14 -40C 25C 85C 105C 20 16 12 11 11 10 10 12 9 9 8 8 7 7 GC 8 6 600 700 6 1200 800 900 1000 1100 RF FREQUENCY (MHz) 6 600 45 40 700 800 900 1000 1100 RF FREQUENCY (MHz) 30 600 1200 700 800 900 1000 1100 RF FREQUENCY (MHz) 1200 5590 G03 5590 G02 700MHz Conversion Gain, IIP3 and NF vs LO Power 1100MHz Conversion Gain, IIP3 and NF vs LO Power 900MHz Conversion Gain, IIP3 and NF vs LO Power 28 22 28 22 20 26 20 26 20 24 18 24 18 24 16 22 16 22 IIP3 22 14 18 12 16 10 14 8 NF 12 10 6 6 -6 -4 18 12 16 10 14 8 NF 6 12 GC 6 0 4 -2 2 0 LO INPUT POWER (dBm) 14 8 2 8 20 10 4 GC -40C 25C 85C -6 6 -4 4 -2 2 0 LO INPUT POWER (dBm) Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply) 20 12 16 10 14 4 10 2 8 0 6 28 20 26 24 18 24 18 16 22 12 16 10 14 8 NF 6 12 GC 10 12 16 10 14 8 8 2 8 6 0 3.6 6 5590 G07 NF 6 12 10 3.5 3.2 3.1 3.4 3.3 VCC, VCCIF SUPPLY VOLTAGE (V) 14 18 4 3 RF = 900MHz VCC = 3.3V 20 GC 4 2 3 4 3.5 5 4.5 VCCIF SUPPLY VOLTAGE (V) 0 5.5 5590 G08 SSB NF (dB) 18 SSB NF (dB) 14 16 -40C 25C 85C GC (dB), IIP3 (dBm), P1dB (dBm) 22 26 GC (dB), IIP3 (dBm) 28 20 RF = 900MHz VCC = VCCIF 2 -4 0 4 -2 2 0 LO INPUT POWER (dBm) 6 Conversion Gain, IIP3 and RF Input P1dB vs Temperature 22 20 4 5590 G06 Conversion Gain, IIP3 and NF vs Supply Voltage (Dual Supply) IIP3 6 GC -6 6 8 NF 12 26 -40C 25C 85C 14 18 28 IIP3 16 -40C 25C 85C 5590 G05 5590 G04 22 18 IIP3 SSB NF (dB) 20 IIP3 SSB NF (dB) -40C 25C 85C GC (dB), IIP3 (dBm) 22 26 GC (dB), IIP3 (dBm) 28 SSB NF (dB) GC (dB), IIP3 (dBm) 50 35 5590 G01 GC (dB), IIP3 (dBm) 55 12 14 10 -40C 25C 85C 105C 13 13 GC (dB) 18 Channel Isolation vs RF Frequency 60 ISOLATION (dB) IIP3 SSB NF (dB) 24 IIP3 (dBm) SSB NF vs RF Frequency 28 24 22 20 IIP3 RF = 900MHz VCCIF = 3.3V VCCIF = 5V 18 16 14 P1dB 12 10 8 6 -40 GC 20 -10 80 50 CASE TEMPERATURE (C) 110 5590 G09 5590f 5 LTC5590 TYPICAL AC PERFORMANCE CHARACTERISTICS High Side LO VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25C, PLO = 0dBm, PRF = -3dBm (-3dBm/tone for two-tone IIP3 tests, f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1. Single-Tone IF Output Power, 2 x 2 and 3 x 3 Spurs vs RF Input Power 20 20 10 10 -60 RF1 = 899MHz RF2 = 901MHz LO = 1090MHz -20 -30 -40 -50 IM3 -60 IM5 -10 -20 -30 LO = 1090MHz 3LO-3RF (RF = 1026.67MHz) -40 -50 -60 -70 2LO-2RF (RF = 995MHz) -70 -80 -12 -6 -9 3 -3 0 RF INPUT POWER (dBm/TONE) -80 -12 6 RF = 900MHz BLOCKER = 800MHz 16 14 RF Isolation vs RF Frequency 0 70 -10 60 LO-IF -30 -40 LO-RF 40 85C 25C -40C 900 0 600 1400 1000 1100 1200 1300 LO FREQUENCY (MHz) RF = 900MHz 40 5 0 9.5 GAIN (dB) 5590 G16 1200 RF = 900MHz 30 25 20 15 25 20 15 10 10 5 5 0 0 9 85C 25C -40C 35 DISTRIBUTION (%) 10 800 900 1000 1100 RF FREQUENCY (MHz) SSB Noise Figure Distribution 85C 25C -40C 35 DISTRIBUTION (%) DISTRIBUTION (%) 15 700 5590 G15 30 8.5 RF-IF 20 IIP3 Distribution 20 8 30 5590 G14 Conversion Gain Distribution 25 40 10 -60 800 10 RF-LO 50 -20 5590 G13 RF = 900MHz 6 -3 3 0 LO INPUT POWER (dBm) 5590 G12 -50 10 30 3LO-3RF (RF = 1026.67MHz) -80 -6 12 -15 5 -10 -5 0 RF BLOCKER POWER (dBm) 2LO-2RF (RF = 995MHz) -75 6 3 ISOLATION (dB) SSB NF (dB) LO LEAKAGE (dBm) PLO = -3dBm PLO = 0dBm PLO = 3dBm PLO = 6dBm 8 -20 -70 LO Leakage vs LO Frequency 24 18 -65 5590 G11 SSB Noise Figure vs RF Blocker Power 20 IF = 190MHz PRF = -10dBm LO = 1090MHz -85 -6 0 -3 RF INPUT POWER (dBm) -9 5590 G10 22 RELATIVE SPUR LEVEL (dBc) IFOUT 2 x 2 and 3 x 3 Spur Suppression vs LO Input Power IFOUT (RF = 900MHz) 0 0 -10 OUTPUT POWER (dBm) OUTPUT POWER (dBm/TONE) 2-Tone IF Output Power, IM3 and IM5 vs RF Input Power 24 24.5 25 25.5 26 IIP3 (dB) 26.5 27 5590 G17 8 8.5 9 9.5 10 10.5 NOISE FIGURE (dB) 11 11.5 5590 G18 5590f 6 LTC5590 TYPICAL AC PERFORMANCE CHARACTERISTICS Low Power Mode, High Side LO VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = High, TC = 25C, PLO = 0dBm, PRF = -3dBm (-3dBm/tone for two-tone IIP3 tests, f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1. Conversion Gain and IIP3 vs RF Frequency 16 22 15 21 14 20 -40C 25C 85C 105C 14 12 11 -40C 25C 85C 105C 16 10 9 12 10 8 15 14 7 13 6 GC 12 600 700 8 6 600 700 800 900 1000 1100 RF FREQUENCY (MHz) 5590 G19 IIP3 24 18 22 12 8 NF 10 GC GC (dB), IIP3 (dBm) 10 4 -2 2 0 LO INPUT POWER (dBm) 16 4 8 18 22 16 20 12 8 NF GC 6 -4 -6 6 24 10 12 10 20 14 14 4 -2 2 0 LO INPUT POWER (dBm) IM5 Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply) 16 14 18 NF 16 10 12 6 10 4 8 2 6 6 2 18 22 20 16 10 GC RF = 900MHz VCC = VCCIF 8 NF 6 16 12 10 14 12 8 NF 10 GC RF = 900MHz VCC = 3.3V 6 8 4 8 4 6 2 3.6 6 2 5.5 3 3.5 3.2 3.1 3.4 3.3 VCC, VCCIF SUPPLY VOLTAGE (V) 5590 G25 3 5 4 3.5 4.5 VCCIF SUPPLY VOLTAGE (V) 5590 G26 SSB NF (dB) 10 14 12 SSB NF (dB) 12 14 GC (dB), IIP3 (dBm), P1dB (dBm) 22 16 GC (dB), IIP3 (dBm) 18 20 18 6 Conversion Gain, IIP3 and RF Input P1dB vs Temperature 22 16 4 -2 2 0 LO INPUT POWER (dBm) 5590 G24 24 14 6 4 -4 -6 20 -40C 25C 85C 8 -40C 25C 85C GC Conversion Gain, IIP3 and NF vs Supply Voltage (Dual Supply) IIP3 12 14 24 18 18 IIP3 20 -40C 25C 85C 6 20 24 IIP3 3 -6 -9 0 -3 RF INPUT POWER (dBm/TONE) 5590 G23 5590 G22 GC (dB), IIP3 (dBm) -60 1100MHz Conversion Gain, IIP3 and NF vs LO Power -40C 25C 85C 18 6 2 -4 -6 -50 SSB NF (dB) 12 14 6 IM3 -40 5590 G21 SSB NF (dB) 14 -40C 25C 85C 8 -30 -80 -12 1200 IIP3 20 SSB NF (dB) GC (dB), IIP3 (dBm) 20 16 20 16 RF1 = 899MHz RF2 = 901MHz LO = 1090MHz -20 900MHz Conversion Gain, IIP3 and NF vs LO Power 24 18 -10 5590 G20 700MHz Conversion Gain, IIP3 and NF vs LO Power 22 0 -70 5 1200 800 900 1000 1100 RF FREQUENCY (MHz) IFOUT 10 GC (dB), IIP3 (dBm) 17 GC (dB) 18 SSB NF (dB) 13 IIP3 19 IIP3 (dBm) 16 OUTPUT POWER (dBm/tone) 23 20 2-Tone IF Output Power, IM3 and IM5 vs RF Input Power SSB NF vs RF Frequency 20 IIP3 VCCIF = 3.3V VCCIF = 5V 18 16 RF = 900MHz 14 12 10 8 6 -40 P1dB GC 80 20 -10 50 CASE TEMPERATURE (C) 110 5590 G27 5590f 7 LTC5590 TYPICAL AC PERFORMANCE CHARACTERISTICS Low Side LO VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25C, PLO = 0dBm, PRF = -3dBm (-3dBm/tone for two-tone IIP3 tests, f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1. Conversion Gain and IIP3 vs RF Frequency 30 17 16 28 16 15 15 14 IIP3 12 11 16 10 GC 11 10 9 9 12 8 8 10 7 7 14 8 1100 1200 6 1700 1300 1400 1500 1600 RF FREQUENCY (MHz) 6 1100 1200 30 20 26 1300 1400 1500 1600 RF FREQUENCY (MHz) 12 8 NF GC 6 2 -2 0 LO INPUT POWER (dBm) 4 4 10 0 6 24 30 20 26 8 NF GC 10 8 NF GC -4 2 -2 0 LO INPUT POWER (dBm) IIP3 GC (dB), IIP3 (dBm) 12 14 26 4 24 20 -40C 25C 85C 22 12 14 4 10 0 6 6 22 RF = 1400MHz VCC = 3.3V -40C 25C 85C 18 4 GC 0 -4 2 -2 0 LO INPUT POWER (dBm) 4 10 0 3.6 6 GC 4 6 5590 G33 Conversion Gain, IIP3 and RF Input P1dB vs Temperature 24 30 20 26 16 8 NF 8 NF -6 12 14 16 18 Conversion Gain, IIP3 and NF vs Supply Voltage (Dual Supply) -40C 25C 16 85C 18 20 4 SSB NF (dB) RF = 1400MHz VCC = VCCIF 30 5590 G32 SSB NF (dB) GC (dB), IIP3 (dBm) 22 24 12 -6 Conversion Gain, IIP3 and NF vs Supply Voltage (Single Supply) IIP3 5590 G30 16 18 14 10 IIP3 -40C 25C 85C 5590 G31 26 0 5 -10 -5 RF BLOCKER LEVEL (dBm) 1600MHz Conversion Gain, IIP3 and NF vs LO Power IIP3 22 6 30 -15 SSB NF (dB) 18 -4 8 -20 1700 SSB NF (dB) 22 -40C 25C 16 85C GC (dB), IIP3 (dBm) 24 SSB NF (dB) GC (dB), IIP3 (dBm) IIP3 -6 14 1400MHz Conversion Gain, IIP3 and NF vs LO Power 30 10 16 5590 G29 1200MHz Conversion Gain, IIP3 and NF vs LO Power 14 RF = 1400MHz BLOCKER = 1500MHz 10 5590 G28 26 18 12 GC (dB), IIP3 (dBm) 18 12 GC (dB), IIP3 (dBm), P1dB (dBm) 20 13 20 PLO = -3dBm PLO = 0dBm PLO = 3dBm PLO = 6dBm 22 13 SSB NF (dB) -40C 25C 85C 105C 22 GC (dB) IIP3 (dBm) 14 24 -40C 25C 85C 105C SSB NF (dB) 26 24 SSB Noise Figure vs RF Blocker Level SSB NF vs RF Frequency IIP3 22 VCCIF = 3.3V VCCIF = 5V RF = 1400MHz 18 14 P1dB 10 GC 6 3 3.4 3.5 3.1 3.2 3.3 VCC, VCCIF SUPPLY VOLTAGE (V) 5590 G34 3 4.5 5 3.5 4 VCCIF SUPPLY VOLTAGE (V) 0 5.5 5590 G35 6 -40 50 80 -10 20 CASE TEMPERATURE (C) 110 5590 G36 5590f 8 LTC5590 TYPICAL DC PERFORMANCE CHARACTERISTICS ISEL = Low, ENA = ENB = High, test circuit shown in Figure 1. VCC Supply Current vs Supply Voltage (Mixer and LO Amplifier) 260 VCCIF = VCC 240 85C 190 188 25C 186 480 105C 460 440 105C 192 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 194 VCC = 3.3V Total Supply Current vs Temperature (VCC + VCCIF) -40C 184 SUPPLY CURRENT (mA) 196 VCCIF Supply Current vs Supply Voltage (IF Amplifier) 85C 220 200 25C 180 160 -40C 3 3.1 3.3 3.4 3.5 3.2 VCC SUPPLY VOLTAGE (V) 3 3.6 380 VCC = VCCIF = 3.3V (SINGLE SUPPLY) 360 340 300 120 180 400 320 140 182 VCC = 3.3V, VCCIF = 5V (DUAL SUPPLY) 420 3.3 3.6 3.9 4.2 4.5 4.8 5.1 VCCIF SUPPLY VOLTAGE (V) 280 -40 5.4 20 50 80 -10 CASE TEMPERATURE (C) 5590 G38 5590 G37 110 5590 G39 ISEL = High, ENA = ENB = High, test circuit shown in Figure 1. VCCIF Supply Current vs Supply Voltage (IF Amplifier) 130 170 VCCIF = VCC SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 85C 124 25C 122 120 -40C 280 105C 150 126 300 VCC = 3.3V 128 105C Total Supply Current vs Temperature (VCC + VCCIF) SUPPLY CURRENT (mA) VCC Supply Current vs Supply Voltage (Mixer and LO Amplifier) 85C 130 25C 110 -40C 90 70 3 3.1 3.3 3.4 3.5 3.2 VCC SUPPLY VOLTAGE (V) 3.6 5590 G40 VCC = 3.3V, VCCIF = 5V (DUAL SUPPLY) 240 VCC = VCCIF = 3.3V (SINGLE SUPPLY) 220 200 118 116 260 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 VCCIF SUPPLY VOLTAGE (V) 5.4 5590 G41 180 -40 20 50 80 -10 CASE TEMPERATURE (C) 110 5590 G42 5590f 9 LTC5590 PIN FUNCTIONS RFA, RFB (Pins 1, 6): Single-Ended RF Inputs for Channels A and B. These pins are internally connected to the primary sides of the RF input transformers, which have low DC resistance to ground. Series DC-blocking capacitors should be used to avoid damage to the integrated transformer when DC voltage is present at the RF inputs. The RF inputs are impedance matched when the LO input is driven with a 06dBm source between 700MHz and 1.5GHz and the channels are enabled. CTA, CTB (Pins 2, 5): RF Transformer Secondary CenterTap on Channels A and B. These pins may require bypass capacitors to ground to optimize IIP3 performance. Each pin has an internally generated bias voltage of 1.2V and must be DC-isolated from ground and VCC. GND (Pins 3, 4, 7, 13, 15, 24, Exposed Pad Pin 25): Ground. These pins must be soldered to the RF ground plane on the circuit board. The exposed pad metal of the package provides both electrical contact to ground and good thermal contact to the printed circuit board. IFGNDB, IFGNDA (Pins 8, 23): DC Ground Returns for the IF Amplifiers. These pins must be connected to ground to complete the DC current paths for the IF amplifiers. Chip inductors may be used to tune LO-IF and RF-IF leakage. Typical DC current is 96mA for each pin. IFB+, IFB-, IFA-, IFA+ (Pins 9, 10, 21, 22): Open-Collector Differential Outputs for the IF Amplifiers of Channels B and A. These pins must be connected to a DC supply through impedance matching inductors, or transformer center-taps. Typical DC current consumption is 48mA into each pin. IFBB, IFBA (Pins 11, 20): Bias Adjust Pins for the IF Amplifiers. These pins allow independent adjustment of the internal IF buffer currents for channels B and A, respectively. The typical DC voltage on these pins is 2.2V. If not used, these pins must be DC isolated from ground and VCC. VCCB and VCCA (Pins 12, 19): Power Supply Pins for the LO Buffers and Bias Circuits. These pins must be connected to a regulated 3.3V supply with bypass capacitors located close to the pins. Typical current consumption is 94mA per pin. ENB, ENA (Pins 14, 17): Enable Pins. These pins allow Channels B and A, respectively, to be independently enabled. An applied voltage of greater than 2.5V activates the associated channel while a voltage of less than 0.3V disables the channel. Typical input current is less than 10A. These pins must not be allowed to float. LO (Pin 16): Single-Ended Local Oscillator Input. This pin is internally connected to the primary side of the LO input transformer and has a low DC resistance to ground. Series DC-blocking capacitors should be used to avoid damage to the integrated transformer when DC voltage present at LO input. The LO input is internally matched to 50 for all states of ENA and ENB. ISEL (Pin 18): Low Current Select Pin. When this pin is pulled low (<0.3V), both mixer channels are biased at the normal current level for best RF performance. When greater than 2.5V is applied, both channels operate at reduced current, which provides reasonable performance at lower power consumption. This pin must not be allowed to float. 5590f 10 LTC5590 BLOCK DIAGRAM 24 GND 23 22 IFGNDA IFA+ 21 IFA- 20 19 IFBA VCCA IF AMP 1 2 BIAS ISEL ENA RFA LO AMP CTA LO 18 17 16 3 GND 4 GND CTB 5 6 GND 15 LO AMP RFB ENB IF AMP 14 BIAS GND 13 GND 7 IFB+ IFGNDB 8 9 IFB- 10 IFBB 11 VCCB 12 5590 BD 5590f 11 LTC5590 TEST CIRCUIT T1A 4:1 IFA 50 C7A L1A VCCIF 3.3V TO 5V RF 0.015" L2A GND DC1710A EVALUATION BOARD BIAS STACK-UP GND (NELCO N4000-13) 0.062" C6 VCC 3.3V C5A 24 C1A RFA 50 23 GND IFGNDA C3A 22 21 20 19 IFA+ IFA- IFBA VCCA 0.015" C4 1 RFA ISEL 18 ISEL (0V/3.3V) 2 CTA ENA 17 ENA (0V/3.3V) 3 GND LO 16 C2 LTC5590 4 GND GND 15 5 CTB ENB 14 LO 50 ENB (0V/3.3V) C1B RFB 50 6 RFB GND 13 GND IFGNDB IFB+ 7 8 9 IFB- IFBB VCCB 10 11 12 5590 TC01 C3B C5B L2B L1B C7B 4:1 T1B IFB 50 L1, L2 vs IF FREQUENCIES REF DES VALUE SIZE VENDOR IF (MHz) L1, L2 (nH) C1A, C1B 100pF 0402 AVX 140 270 C2 10pF 0402 AVX 190 150 22pF 0402 AVX 240 100 C3A, C3B C5A, C5B 300 56 C4, C6 1F 0603 AVX 380 33 C7A, C7B 1000pF 0402 AVX 450 22 L1A, L1B, L2A, L2B 150nH 0603 Coilcraft T1A, T1B TC4-1W-7ALN+ Mini-Circuits Figure 1. Standard Downmixer Test Circuit Schematic (190MHz) 5590f 12 LTC5590 APPLICATIONS INFORMATION Introduction The LTC5590 consists of two identical mixer channels driven by a common LO input signal. Each high linearity mixer consists of a passive double-balanced mixer core, IF buffer amplifier, LO buffer amplifier and bias/enable circuits. See the Pin Functions and Block Diagram sections for a description of each pin. Each of the mixers can be shutdown independently to reduce power consumption and low current mode can be selected that allows a trade-off between performance and power consumption. The RF and LO inputs are single-ended and are internally matched to 50. Low side or high side LO injection can be used. The IF outputs are differential. The evaluation circuit, shown in Figure 1, utilizes bandpass IF output matching and an IF transformer to realize a 50 single-ended IF output. The evaluation board layout is shown in Figure 2. The secondary winding of the RF transformer is internally connected to the channel A passive mixer core. The centertap of the transformer secondary is connected to Pin 2 (CTA) to allow the connection of bypass capacitor, C8A. The value of C8A is LO frequency-dependent and is not required for most applications, though it can improve IIP3 in some cases. When used, it should be located within 2mm of Pin 2 for proper high frequency decoupling. The nominal DC voltage on the CTA pin is 1.2V. For the RF inputs to be properly matched, the appropriate LO signal must be present at the LO input. The RF input impedance is also dependent on the LO frequency, as shown in Figure 4, which shows the RF input return loss for various LO frequencies with a C1A value of 100pF. A broadband impedance match is achieved over the 700MHz to 1.4GHz range. Outside this frequency range, the desired impedance match can be obtained through adjustment of external component values. LTC5590 RFA TO CHANNEL A MIXER C1A 1 2 RFA CTA C8A 5590 F03 Figure 3. Channel A RF Input Schematic 5590 F02 0 RF Inputs The RF inputs of channels A and B are identical. The RF input of channel A, shown in Figure 3, is connected to the primary winding of an integrated transformer. A 50 match is realized when a series external capacitor, C1A, is connected to the RF input. C1A is also needed for DC blocking if the source has DC voltage present, since the primary side of the RF transformer is internally DC-grounded. The DC resistance of the primary is approximately 4.5. RETURN LOSS (dB) -5 Figure 2. Evaluation Board Layout LO = 700MHz LO = 1090MHz LO = 1500MHz -10 -15 -20 -25 600 700 800 900 1000 1100 1200 1300 1400 FREQUENCY (MHz) 5590 F04 Figure 4. RF Port Return Loss 5590f 13 LTC5590 APPLICATIONS INFORMATION Table 1. RF Input Impedance and S11 (at Pin 1, No External Matching, fLO = 1.09GHz) FREQUENCY (GHz) RF INPUT IMPEDANCE S11 MAG ANGLE 0.6 34.2 + j24.5 0.33 107 0.7 41.3 + j22.4 0.26 97 0.8 48.5 + j18.1 0.18 84 0.9 54.3 + j10.1 0.10 61 1.0 54.2 - j4.6 0.06 -45 1.1 38.4 - j16 0.22 -116 1.2 29.3 - j9.4 0.29 -149 1.3 27.7 - j4.5 0.29 -165 1.4 27.4 - j1.6 0.29 -175 1.5 27.8 - j0.1 0.28 -180 1.6 29.4 + j0.2 0.26 179 1.7 31.2 -j0.5 0.23 -178 ISEL LTC5590 BIAS ENA The secondary of the transformer drives a pair of high speed limiting differential amplifiers for channels A and B. The LTC5590's LO amplifiers are optimized for the 700MHz to 1.5GHz LO frequency range; however, LO frequencies outside this frequency range may be used with degraded performance. The LO port is always 50 matched when VCC is applied, even when one or both of the channels is disabled. This helps to reduce frequency pulling of the LO source when the mixer is switched between different operating states. Figure 6 illustrates the LO port return loss for the different operating modes. 0 -10 -15 -20 -25 700 800 900 1000 1100 1200 1300 1400 1500 FREQUENCY (MHz) 18 5590 F06 17 Figure 6. LO Input Return Loss TO MIXER A C2 LO TO MIXER B ENB BIAS BOTH CHANNELS ON ONE CHANNEL ON BOTH CHANNELS OFF -5 RETURN LOSS (dB) The RF input impedance and input reflection coefficient, versus RF frequency, are listed in Table 1. The reference plane for this data is Pin 1 of the IC, with no external matching, and the LO is driven at 1.09GHz. LO 16 The nominal LO input level is 0dBm, though the limiting amplifiers will deliver excellent performance over a 6dBm input power range. Table 2 lists the LO input impedance and input reflection coefficient versus frequency. 14 5590 F05 Figure 5. LO Input Schematic LO Input The LO input, shown in Figure 5, is connected to the primary winding of an integrated transformer. A 50 impedance match is realized at the LO port by adding an external series capacitor, C2. This capacitor is also needed for DC blocking if the LO source has DC voltage present, since the primary side of the LO transformer is DC-grounded internally. The DC resistance of the primary is approximately 4.5. Table 2. LO Input Impedance vs Frequency (at Pin 16, No External Matching, ENA = ENB = High) S11 FREQUENCY (GHz) INPUT IMPEDANCE MAG ANGLE 0.7 29.7 + j34.7 0.46 97 0.8 39.9 + j34.1 0.37 86 0.9 48.7 + j26.6 0.26 78 1.0 50.8 + j15.1 0.15 78 1.1 46.5 + j6.2 0.07 116 1.2 39.9 + j2.5 0.12 165 1.3 34.0 + j1.4 0.19 174 1.4 29.2 + j2.1 0.26 173 1.5 25.6 + j3.8 0.33 168 5590f 14 LTC5590 APPLICATIONS INFORMATION IF Outputs The IF amplifiers in channels A and B are identical. The IF amplifier for channel A, shown in Figure 7, has differential open collector outputs (IFA+ and IFA-), a DC ground return pin (IFGNDA), and a pin for adjusting the internal bias (IFBA). The IF outputs must be biased at the supply voltage (VCCIFA), which is applied through matching inductors L1A and L2A. Alternatively, the IF outputs can be biased through the center tap of a transformer (T1A). The common node of L1A and L2A can be connected to the center tap of the transformer. Each IF output pin draws approximately 48mA of DC supply current (96mA total). An external load resistor, R2A, can be used to improve impedance matching if desired. IFGNDA (Pin 23) must be grounded or the amplifier will not draw DC current. Inductor L3A may improve LO-IF and RF-IF leakage performance in some applications, but is otherwise not necessary. Inductors should have small resistance for DC. High DC resistance in L3A will reduce the IF amplifier supply current, which will degrade RF performance. 0.9nH IFA- 0.9nH RIF CIF L2A R1A (OPTION TO REDUCE DC POWER) VCCIFA L3A (OR SHORT) 96mA C5A 22 IFA+ 21 IFA+ Figure 8. IF Output Small-Signal Model C7A IGNDA 22 LTC5590 IFA 4:1 23 At IF frequencies, the IF output impedance can be modeled as 379 in parallel with 2.2pF. The equivalent small-signal model, including bondwire inductance, is shown in Figure 8. Frequency-dependent differential IF output impedance is listed in Table 3. This data is referenced to the package pins (with no external components) and includes the effects of IC and package parasitics. 5590 F08 T1A L1A For optimum single-ended performance, the differential IF output must be combined through an external IF transformer or a discrete IF balun circuit. The evaluation board (see Figures 1 and 2) uses a 4:1 IF transformer for impedance transformation and differential to single-ended conversion. It is also possible to eliminate the IF transformer and drive differential filters or amplifiers directly. R2A 21 20 IFBA IFA- VCCA IF AMP 4mA Bandpass IF Matching The bandpass IF matching configuration, shown in Figures 1 and 7, is best suited for IF frequencies in the 90MHz to 500MHz range. Resistor R2A may be used to reduce the IF output resistance for greater bandwidth and inductors L1A and L2A resonate with the internal IF output capacitance at the desired IF frequency. The value of L1A, L2A can be estimated as follows: L1A = L2A = LTC5590 BIAS 1 (2fIF ) 2 * 2 * CIF 5590 F07 Figure 7. IF Amplifier Schematic with Bandpass Match where CIF is the internal IF capacitance (listed in Table 3). 5590f 15 LTC5590 APPLICATIONS INFORMATION Values of L1A and L2A are tabulated in Figure 1 for various IF frequencies. The measured IF output return loss for bandpass IF matching is plotted in Figure 9. T1A VCCIFA 3.1 TO 5.3V IFA 50 4:1 C7A C5A L1A Table 3. IF Output Impedance vs Frequency L2A R2A FREQUENCY (MHz) DIFFERENTIAL OUTPUT IMPEDANCE (RIF || XIF (CIF)) 90 403 || - j610 (2.9pF) 140 384 || - j474 (2.4pF) 190 379 || - j381 (2.2pF) 240 380 || - j316 (2.1pF) 300 377 || - j253 (2.1pF) 380 376 || - j210 (2.0pF) 450 360 || - j177 (2.0pF) C9A 22 IFA+ 21 LTC5590 IFA- 5590 F10 Figure 10. IF Output with Lowpass Matching 0 -5 180nH RETURN LOSS (dB) 0 RETURN LOSS (dB) -5 -10 -10 68nH 82nH + 1k -15 -20 270nH -15 100nH -30 -20 50 56nH -25 100nH -25 150nH 22nH 33nH 100 200 150 FREQUENCY (MHz) 250 5590 F11 50 100 150 200 250 300 350 400 450 500 FREQUENCY (MHz) 5590 F09 Figure 9. IF Output Return Loss with Bandpass Matching Figure 11. IF Output Return Loss with Lowpass Matching has been laid out to accommodate this matching topology with only minor modifications. Lowpass IF Matching IF Amplifier Bias For IF frequencies below 90MHz, the inductance values become unreasonably high and the lowpass topology shown in Figure 9 is preferred. This topology also can provide improved RF to IF and LO to IF isolation. VCCIFA is supplied through the center tap of the 4:1 transformer. A lowpass impedance transformation is realized by shunt elements R2A and C9A (in parallel with the internal RIF and CIF), and series inductors L1A and L2A. Resistor R2A is used to reduce the IF output resistance for greater bandwidth, or it can be omitted for the highest conversion gain. The final impedance transformation to 50 is realized by transformer T1A. The measured return loss is shown in Figure 11 for different values of inductance (C9A = OpF). The case with 82nH inductors and R2A = 1k is also shown. The LTC5590 demo board (see Figure 2) The IF amplifier delivers excellent performance with VCCIF = 3.3V, which allows a single supply to be used for VCC and VCCIF . At VCCIF = 3.3V, the RF input P1dB of the mixer is limited by the output voltage swing. For higher P1dB, in this case, resistor R2A (Figure 7) can be used to reduce the output impedance and thus the voltage swing, thus improving P1dB. The trade-off for improved P1dB will be lower conversion gain. With VCCIF increased to 5V the P1dB increases by over 3dB, at the expense of higher power consumption. Mixer P1dB performance at 900MHz is tabulated in Table 4 for VCCIF values of 3.3V and 5V. For the highest conversion gain, high-Q wire-wound chip inductors are recommended for L1A and L2A. Low cost multilayer chip inductors may be substituted, with a slight reduction in conversion gain. 5590f 16 LTC5590 APPLICATIONS INFORMATION Table 4. Performance Comparison with VCCIF = 3.3V and 5V (RF = 900MHz, High Side LO, IF = 190MHz) VCCIF (V) R2A () ICCIF (mA) GC (dB) P1dB (dBm) IIP3 (dBm) NF (dB) 3.3 Open 191 8.7 10.7 26.0 9.7 1k 191 7.5 11.4 26.0 9.75 5 Open 200 8.7 14.1 25.5 9.8 When ISEL is set low (<0.3V), both channels operate at nominal DC current. When ISEL is set high (>2.5V), the DC current in both channels is reduced, thus reducing power consumption. The performance in low power mode and normal power mode are compared in Table 6. LTC5590 VCCA 19 The IFBA pin (Pin 20) is available for reducing the DC current consumption of the IF amplifier, at the expense of IIP3. The nominal DC voltage at Pin 20 is 2.1V, and this pin should be left open-circuited for optimum performance. The internal bias circuit produces a 4mA reference for the IF amplifier, which causes the amplifier to draw approximately 96mA. If resistor R1A is connected to Pin 20 as shown in Figure 7, a portion of the reference current can be shunted to ground, resulting in reduced IF amplifier current. For example, R1A = 1k will shunt away 1mA from Pin 20 and the IF amplifier current will be reduced by 28% to approximately 69mA. Table 5 summarizes RF performance versus IF amplifier current. Table 5. Mixer Performance with Reduced IF Amplifier Current ISEL 500 18 BIAS A VCCB BIAS B 5590 F13 Figure 12. ISEL Interface Schematic Table 6. Performance Comparison Between Different Power Modes RF = 900MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V ISEL ITOTAL (mA) GC (dB) IIP3 (dBm) P1dB (dBm) NF (dB) Low 379 8.7 26.0 10.7 9.7 High 239 7.7 21.5 10.4 9.9 RF = 900MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V R1 ICCIF (mA) GC (dB) IIP3 (dBm) P1dB (dB) NF (dB) Open 191 8.7 26.0 10.7 9.7 4.7k 173 8.7 25.6 10.6 9.7 2.2k 156 8.6 25.0 10.6 9.6 1k 137 8.5 24.1 10.5 9.6 RF = 1400MHz, Low Side LO, IF = 190MHz, VCC = VCCIF = 3.3V R1 ICCIF (mA) GC (dB) IIP3 (dBm) P1dB (dBm) NF (dB) Open 191 8.4 27.3 11 9.7 4.7k 173 8.5 26.8 10.9 9.6 2.2k 156 8.5 26.2 10.9 9.6 1k 137 8.4 25.1 10.8 9.6 Enable Interface Figure 13 shows a simplified schematic of the ENA pin interface (ENB is identical). To enable channel A, the ENA voltage must be greater than 2.5V. If the enable function is not required, the enable pin can be connected directly to VCC. The voltage at the enable pin should never exceed the power supply voltage (VCC) by more than 0.3V. If this LTC5590 VCCA 19 ESD CLAMP ENA 500 17 Low Power Mode Both mixer channels can be set to low power mode using the ISEL pin. This allows flexibility to select a reduced current mode of operation when lower RF performance is acceptable, reducing power consumption by 37%. Figure 12 shows a simplified schematic of the ISEL pin interface. 5590 F13 Figure 13. ENA Interface Schematic 5590f 17 LTC5590 APPLICATIONS INFORMATION should occur, the supply current could be sourced through the ESD diode, potentially damaging the IC. The Enable pins must be pulled high or low. If left floating, the on/off state of the IC will be indeterminate. If a three-state condition can exist at the enable pins, then a pull-up or pull-down resistor must be used. Supply Voltage Ramping Fast ramping of the supply voltage can cause a current glitch in the internal ESD protection circuits. Depending on the supply inductance, this could result in a supply volt- age transient that exceeds the maximum rating. A supply voltage ramp time of greater than 1ms is recommended. Spurious Output Levels Mixer spurious output levels versus harmonics of the RF and LO are tabulated in Tables 7 and 8 for frequencies up to 10GHz. The spur levels were measured on a standard evalution board using the test circuit shown in Figure 1. The spur frequencies can be calculated using the following equation: fSPUR = (M * fRF) - (N * fLO) Table 7. IF Output Spur Levels (dBc), High Side LO (RF = 900MHz, PRF = -3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25C) 0 1 2 3 4 M 5 6 7 8 9 10 *Less than -100dBc 0 -31.8 -68.6 * * * * * * * * 1 -40.0 0 -63.0 * * * * * * * * 2 -42 -49.0 -78.6 * * * * * * * * 3 -54.8 -47.4 -73.9 -81.5 -78.0 * * * * * * N 4 -55.7 -72.2 -87.7 * * * * * * * * 5 -66.5 -64.0 -87.8 * * * * * * * * 6 -81.4 -88.5 -82.3 * * * * * * * * 7 -73.1 -70.3 * * * * * * * * * 8 -74.3 -81.6 * * * * * * * * * 9 -72.5 -81.2 * * * * * * * * * 10 5 -71.3 -67.5 -86.4 * * * * * * -95.6 -94.5 6 -67.4 -78.3 -83.2 * * * * * * * * 7 -85.3 -73.4 * * * * * * * * * 8 -69.9 * -93.2 * * * * * * * * 9 10 * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Table 8. IF Output Spur Levels (dBc), Low Side LO (RF = 1400MHz, PRF = -3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25C) 0 1 2 3 4 M 5 6 7 8 9 10 *Less than -100dBc 0 -40.8 -77.5 * * * * * 1 -46.2 0 -74.4 -88.7 * * * * * 2 -42.2 -44.5 -69.3 * * * * * * 3 -55.9 -52.2 -71.7 -76.8 * * * * -93.7 * N 4 -56.9 -75.0 * -89.2 * * * * * * * 5590f 18 LTC5590 PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. UH Package 24-Lead Plastic QFN (5mm x 5mm) (Reference LTC DWG # 05-08-1747 Rev A) 0.75 p0.05 5.40 p0.05 3.90 p0.05 3.20 p 0.05 3.25 REF 3.20 p 0.05 PACKAGE OUTLINE 0.30 p 0.05 0.65 BSC RECOMMENDED SOLDER PAD LAYOUT APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 5.00 p 0.10 R = 0.05 TYP 0.75 p 0.05 BOTTOM VIEW--EXPOSED PAD R = 0.150 TYP 23 0.00 - 0.05 PIN 1 NOTCH R = 0.30 TYP OR 0.35 s 45o CHAMFER 24 0.55 p 0.10 PIN 1 TOP MARK (NOTE 6) 1 2 3.20 p 0.10 5.00 p 0.10 3.25 REF 3.20 p 0.10 (UH24) QFN 0708 REV A 0.200 REF NOTE: 1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.30 p 0.05 0.65 BSC 5590f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 19 LTC5590 TYPICAL APPLICATION Downconverting Mixer with 140MHz Lowpass IF Matching TC4-1W-7ALN+ 4:1 Conversion Gain, NF and IIP3 vs RF Frequency 82nH VCC 3.3V 82nH 22pF TO CHANNEL B 24 100pF RFA 50 23 22 GND IFGNDA IFA+ 21 20 1F TO CHANNEL B 19 IFA- IFBA VCCA 1 RFA 13 23 12 22 ENA ENA 17 LTC5590 CHANNEL A 21 11 10 NF 20 19 9 GC 7 700 2 CTA 24 800 1100 900 1000 RF FREQUENCY (MHz) LO 16 4 GND GND 15 CHANNEL B NOT SHOWN 17 1200 5590 TA02b 10pF 3 GND 18 8 ISEL ISEL 18 IIP3 TC = 25C IF = 140MHz IIP3 (dBm) 1k 14 GC (dB), SSB NF (dB) 22pF 25 15 VCCIF 3.3V 1F 26 16 IFA 50 LO 50 5590 TA02 RELATED PARTS PART NUMBER DESCRIPTION Infrastructure LTC5569 300MHz to 4GHz, Dual Active Downconverting Mixer LT5527 400MHz to 3.7GHz, 5V Downconverting Mixer LT5557 400MHz to 3.8GHz, 3.3V Downconverting Mixer LTC6416 2GHz 16-Bit ADC Buffer LTC6412 31dB Linear Analog VGA LTC554X 600MHz to 4GHz Downconverting Mixer Family LT5554 Ultralow Distort IF Digital VGA LT5578 400MHz to 2.7GHz Upconverting Mixer LT5579 1.5GHz to 3.8GHz Upconverting Mixer RF Power Detectors LTC5581 6GHz Low Power RMS Detector LTC5582 10GHz RMS Power Detector LTC5583 Dual 6GHz RMS Power Detector Measures VSWR ADCs LTC2285 LTC2185 LTC2242-12 14-Bit, 125Msps Dual ADC 16-Bit, 125Msps Dual ADC Ultralow Power 12-Bit, 250Msps ADC COMMENTS 2dB Gain, 26.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/180mA Supply 2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA Supply 2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA Supply 40.25dBm OIP3 to 300MHz, Programmable Fast Recovery Output Clamping 35dBm OIP3 at 240MHz, Continuous Gain Range -14dB to 17dB 8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA Supply 48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps 27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer 27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports 40dB Dynamic Range, 1dB Accuracy Overtemperature, 1.5mA Supply Current 40MHz to 10GHz, Up to 57dB Dynamic Range, 0.5dB Accuracy Overtemperature 40MHz to 6GHz, Up to 60dB Dynamic Range, >40dB Channel-to-Channel Isolation, Difference Output for vs WR Measurement 72.4dB SNR, >88dB SFDR, 790mW Power Consumption 74.8dB SNR, 185mW/Channel Power Consumption 65.4dB SNR, 78dB SFDR, 740mW Power Consumption 5590f 20 Linear Technology Corporation LT 0811 * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com (c) LINEAR TECHNOLOGY CORPORATION 2011