LTC5590
1
5590f
TYPICAL APPLICATION
FEATURES DESCRIPTION
Dual 600MHz to 1.7GHz
High Dynamic Range
Downconverting Mixer
The LTC
®
5590 is part of a family of dual-channel high dy-
namic range, high gain downconverting mixers covering
the 600MHz to 4.5GHz RF frequency range. The LTC5590
is optimized for 600MHz to 1.7GHz RF applications. The
LO frequency must fall within the 700MHz to 1.5GHz
range for optimum performance. A typical application
is a LTE or GSM receiver with a 700MHz to 915MHz RF
input and high side LO.
The LTC5590’s high conversion gain and high dynamic
range enable the use of lossy IF filters in high selectivity
receiver designs, while minimizing the total solution cost,
board space and system-level variation. A low current
mode is provided for additional power savings and each
of the mixer channels has independent shutdown control.
Wideband Receiver
APPLICATIONS
n Conversion Gain: 8.7dB at 900MHz
n IIP3: 26dBm at 900MHz
n Noise Figure: 9.7dB at 900MHz
n 15.6dB NF Under 5dBm Blocking
n High Input P1dB
n 53dB Channel Isolation at 900MHz
n 1.3W Power Consumption at 3.3V
n Low Power Mode for <0.8W Consumption
n Enable Pins for Each Channel
n 50Ω Single-Ended RF and LO Inputs
n LO Input Matched In All Modes
n 0dBm LO Drive Level
n Small Package and Solution Size
n –40°C to 105°C Operation
n 3G/4G Wireless Infrastructure Diversity Receivers
(LTE, CDMA, GSM)
n MIMO Infrastructure Receivers
n High Dynamic Range Downmixer Applications
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
High Dynamic Range Dual Downconverting Mixer Family
PART NUMBER RF RANGE LO RANGE
LTC5590 600MHz to 1.7GHz 700MHz to 1.5GHz
LTC5591 1.3GHz to 2.3GHz 1.4GHz to 2.1GHz
LTC5592 1.6GHz to 2.7GHz 1.7GHz to 2.5GHz
LTC5593 2.3GHz to 4.5GHz 2.1GHz to 4.2GHz
Wideband Conversion Gain
NF and IIP3 vs IF Frequency
(Mixer Only, Measured on
Evaluation Board)
IF
AMP ADC
IF
AMP
RF
700MHz TO
915MHz
LNA
BIAS
BIAS
SYNTH
VCCIF
3.3V or 5V
VCC
3.3V
22pF
22pF
100pF
1µF
22pF 1µF
22pF
150nH 150nH
1nF
1nF
190MHz
SAW
190MHz
BPF
IMAGE
BPF
RFA
RFB
ENA
LO
ENA
(0V/3.3V)
LO 1090MHz
10pF
VCCA
VCCB
IFA+IFA–
IFB+IFB–
5590 TA01a
LO
AMP
LO
AMP
ENB ENB
(0V/3.3V)
RF
700MHz TO
915MHz
LNA
100pF
IMAGE
BPF
IF
AMP
IF
AMP ADC
150nH 150nH
1nF
1nF 190MHz
SAW
190MHz
BPF
VCCIF VCC
IF FREQUENCY (MHz)
160
5
6
7
GC (dB), SSB NF (dB)
IIP3 (dBm)
9
10
11
13
12
170 190
5590 TA01b
8
180 200 210 220
21
23
25
27
22
24
26
20
19
LO = 1090MHz
PLO = 0dBm
RF = 900 ±30MHz
TEST CIRCUIT IN FIGURE 1
GC
IIP3
NF
LTC5590
2
5590f
PIN CONFIGURATIONABSOLUTE MAXIMUM RATINGS
Supply Voltage (VCC) ...............................................4.0V
IF Supply Voltage (VCCIF) .........................................5.5V
Enable Voltage (ENA, ENB) ..............–0.3V to VCC + 0.3V
Bias Adjust Voltage (IFBA, IFBB) ......–0.3V to VCC + 0.3V
Power Select Voltage (ISEL) .............–0.3V to VCC + 0.3V
LO Input Power (300MHz to 3GHz) ........................9dBm
LO Input DC Voltage ............................................... ±0.1V
RFA, RFB Input Power (300MHz to 3GHz) ...........15dBm
RFA, RFB Input DC Voltage .................................... ±0.1V
Operating Temperature Range (TC) ........ –40°C to 105°C
Storage Temperature Range .................. –65°C to 150°C
Junction Temperature (TJ) .................................... 150°C
(Note 1)
24 23 22 21 20 19
7 8 9
TOP VIEW
25
GND
UH PACKAGE
24-LEAD
(
5mm w 5mm
)
PLASTIC QFN
10 11 12
6
5
4
3
2
1
13
14
15
16
17
18
RFA
CTA
GND
GND
CTB
RFB
ISEL
ENA
LO
GND
ENB
GND
GND
IFGNDA
IFA+
IFA–
IFBA
VCCA
GND
IFGNDB
IFB+
IFB–
IFBB
VCCB
TJMAX = 150°C, θJC = 7°C/W
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LTC5590IUH#PBF LTC5590IUH#TRPBF 5590 24-Lead (5mm × 5mm) Plastic QFN –40°C to 105°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
DC ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements (VCCA, VCCB, VCCIFA, VCCIFB)
VCCA, VCCB Supply Voltage (Pins 12, 19) 3.1 3.3 3.5 V
VCCIFA, VCCIFB Supply Voltage (Pins 9, 10, 21, 22) 3.1 3.3 5.3 V
Mixer Supply Current (Pins 12, 19) Both Channels Enabled 188 242 mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 191 242 mA
Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 379 484 mA
Total Supply Current – Shutdown ENA = ENB = Low 500 µA
Enable Logic Input (ENA, ENB) High = On, Low = Off
ENA, ENB Input High Voltage (On) 2.5 V
ENA, ENB Input Low Voltage (Off) 0.3 V
ENA, ENB Input Current –0.3V to VCC + 0.3V –20 30 µA
Turn On Time 0.9 µs
Turn Off Time 1µs
V
CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
LTC5590
3
5590f
DC ELECTRICAL CHARACTERISTICS
V
CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Low Current Mode Logic Input (ISEL) High = Low Power, Low = Normal Power Mode
ISEL Input High Voltage 2.5 V
ISEL Input Low Voltage 0.3 V
ISEL Input Current –0.3V to VCC + 0.3V –20 30 µA
Low Current Mode Current Consumption (ISEL = High)
Mixer Supply Current (Pins 12, 19) Both Channels Enabled 123 159 mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22) Both Channels Enabled 116 146 mA
Total Supply Current (Pins 9, 10, 12, 19, 21, 22) Both Channels Enabled 239 305 mA
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 700MHz
RF = 900MHz
RF = 1100MHz
7.0
8.6
8.7
8.5
dB
dB
dB
Conversion Gain Flatness RF = 900 ±30MHz, LO = 1090MHz, IF = 190 ±30MHz ±0.25 dB
Conversion Gain vs Temperature TC = –40ºC to 105ºC, RF = 1950MHz –0.006 dB/°C
Input 3rd Order Intercept RF = 700MHz
RF = 900MHz
RF = 1100MHz
23.5
25.3
26.0
24.8
dBm
dBm
dBm
SSB Noise Figure RF = 700MHz
RF = 900MHz
RF = 1100MHz
9.3
9.7
9.9
dB
dB
dB
PARAMETER CONDITIONS MIN TYP MAX UNITS
LO Input Frequency Range 700 to 1500 MHz
RF Input Frequency Range Low Side LO
High Side LO
1100 to 1700
600 to 1100
MHz
MHz
IF Output Frequency Range Requires External Matching 5 to 500 MHz
RF Input Return Loss ZO = 50, 700MHz to 1400MHz >12 dB
LO Input Return Loss ZO = 50, 700MHz to 1500MHz >12 dB
IF Output Impedance Differential at 190MHz 380||2.2pF R||C
LO Input Power fLO = 700MHz to 1500MHz –4 0 6 dBm
LO to RF Leakage fLO = 700MHz to 1500MHz <–36 dBm
LO to IF Leakage fLO = 700MHz to 1500MHz <–26 dBm
RF to LO Isolation fRF = 600MHz to 1700MHz >56 dB
RF to IF Isolation fRF = 600MHz to 1700MHz >17 dB
Channel-to-Channel Isolation fRF = 600MHz to 1200MHz
fRF = 1200MHz to 1700MHz
>50
>45
dB
dB
AC ELECTRICAL CHARACTERISTICS
V
CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
PLO = 0dBm, PRF = –3dBm (Δf = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
LTC5590
4
5590f
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 900MHz 7.7 dB
Input 3rd Order Intercept RF = 900MHz 21.5 dBm
SSB Noise Figure RF = 900MHz 9.9 dB
Input 1dB Compression RF = 900MHz, VCCIF = 3.3V
RF = 900MHz, VCCIF = 5V
10.4
10.9
dBm
dBm
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5590 is guaranteed functional over the case operating
temperature range of –40°C to 105°C. (θJC = 7°C/W)
Note 3: SSB Noise Figure measured with a small-signal noise source,
bandpass filter and 6dB matching pad on RF input, bandpass filter and
6dB matching pad on the LO input, and no other RF signals applied.
Note 4: Channel A to channel B isolation is measured as the relative IF
output power of channel B to channel A, with the RF input signal applied to
channel A. The RF input of channel B is 50 terminated and both mixers
are enabled.
AC ELECTRICAL CHARACTERISTICS
V
CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25°C, PLO = 0dBm,
PRF = –3dBm (Δf = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
SSB Noise Figure Under Blocking fRF = 900MHz, fLO = 1090MHz, fBLOCK = 800MHz
PBLOCK = 5dBm
PBLOCK = 10dBm
15.6
21.2
dB
dB
2LO-2RF Output Spurious Product
(fRF = fLO – fIF/2)
fRF = 995MHz at –10dBm, fLO = 1090MHz,
fIF = 190MHz
–77 dBc
3LO-3RF Output Spurious Product
(fRF = fLO – fIF/3)
fRF = 1026.67MHz at –10dBm, fLO = 1090MHz,
fIF = 190MHz
–77 dBc
Input 1dB Compression fRF = 900MHz, VCCIF = 3.3V
fRF = 900MHz, VCCIF = 5V
10.7
14.1
dBm
dBm
High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
Low Power Mode, High Side LO Downmixer Application: ISEL = High, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
8.6
8.4
7.7
dB
dB
dB
Conversion Gain Flatness RF = 1400 ±30MHz, LO = 1210MHz, IF = 190 ±30MHz ±0.22 dB
Conversion Gain vs Temperature TC = –40ºC to 105ºC, RF = 1400MHz –0.008 dB/°C
Input 3rd Order Intercept RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
27.5
27.3
27.2
dBm
dBm
dBm
SSB Noise Figure RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
9.9
9.7
10.4
dB
dB
dB
SSB Noise Figure Under Blocking fRF = 1400MHz, fLO = 1210MHz, fBLOCK = 1500MHz
PBLOCK = 5dBm
PBLOCK = 10dBm
15.0
20.8
dB
dB
2RF-2LO Output Spurious Product
(fRF = fLO + fIF/2)
fRF = 1305MHz at –10dBm, fLO = 1210MHz,
fIF = 190MHz
–72 dBc
3RF-3LO Output Spurious Product
(fRF = fLO + fIF/3)
fRF = 1273.33MHz at –10dBm, fLO = 1210MHz,
fIF = 190MHz
–72 dBc
Input 1dB Compression RF = 1400MHz, VCCIF = 3.3V
RF = 1400MHz, VCCIF = 5V
11.0
14.4
dBm
dBm
Low Side LO Downmixer Application: ISEL = Low, RF = 1100MHz to 1600MHz, IF = 190MHz, fLO = fRF – fIF
LTC5590
5
5590f
Conversion Gain and IIP3 vs
RF Frequency SSB NF vs RF Frequency Channel Isolation vs RF Frequency
700MHz Conversion Gain, IIP3
and NF vs LO Power
900MHz Conversion Gain, IIP3
and NF vs LO Power
1100MHz Conversion Gain, IIP3
and NF vs LO Power
High Side LO
TYPICAL AC PERFORMANCE CHARACTERISTICS
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
Δf = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
Conversion Gain, IIP3 and RF Input
P1dB vs Temperature
RF FREQUENCY (MHz)
600
6
7
8
SSB NF (dB)
10
11
12
15
14
13
700 900
5590 G02
9
800 1000 1100 1200
16
–40°C
25°C
85°C
105°C
LO INPUT POWER (dBm)
–6
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
26
–4 0
5590 G04
12
–2 246
28
0
8
12
16
4
20
2
10
14
18
6
22
–40°C
25°C
85°C
IIP3
NF
GC
LO INPUT POWER (dBm)
–6
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
26
–4 0
5590
G
05
12
–2 246
28
0
8
12
16
4
20
2
10
14
18
6
22
–40°C
25°C
85°C
IIP3
GC
NF
LO INPUT POWER (dBm)
–6
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
26
–4 0
5590 G06
12
–2 246
28
0
8
12
16
4
20
2
10
14
18
6
22
–40°C
25°C
85°C
IIP3
GC
NF
VCC, VCCIF SUPPLY VOLTAGE (V)
3
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
26
3.1 3.3
5590 G07
12
3.2 3.4 3.5 3.6
28
0
8
12
16
4
20
2
10
14
18
6
22
–40°C
25°C
85°C
IIP3
GC
NF
RF = 900MHz
VCC = VCCIF
VCCIF SUPPLY VOLTAGE (V)
3
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
26
3.5 4.5
5590 G08
12
455.5
28
0
8
12
16
4
20
2
10
14
18
6
22
–40°C
25°C
85°C
IIP3
GC
NF
RF = 900MHz
VCC = 3.3V
RF FREQUENCY (MHz)
600
30
35
ISOLATION (dB)
45
50
700 900
5590 G03
40
800 1000 1100 1200
60
55
CASE TEMPERATURE (°C)
–40
6
8
10
GC (dB), IIP3 (dBm), P1dB (dBm)
14
16
18
24
22
20
26
–10 50
5590 G09
12
20 80 110
28
IIP3
P1dB
GC
VCCIF = 3.3V
VCCIF = 5V
RF = 900MHz
RF FREQUENCY (MHz)
600
6
8
10
IIP3 (dBm)
GC (dB)
14
16
18
24
22
20
700 900
5590 G01
12
800 1000 1100 1200
28
IIP3
GC
26
6
7
8
10
11
12
15
14
13
9
17
16
–40°C
25°C
85°C
105°C
LTC5590
6
5590f
SSB Noise Figure vs RF Blocker
Power LO Leakage vs LO Frequency RF Isolation vs RF Frequency
Conversion Gain Distribution IIP3 Distribution SSB Noise Figure Distribution
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
Single-Tone IF Output Power, 2 × 2
and 3 × 3 Spurs vs RF Input Power
2 × 2 and 3 × 3 Spur Suppression
vs LO Input Power
High Side LO
TYPICAL AC PERFORMANCE CHARACTERISTICS
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
Δf = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
RF INPUT POWER (dBm)
–12
–80
–70
–60
OUTPUT POWER (dBm)
–40
–30
0
–10
–20
10
–9 –3
5590 G11
–50
–6 036
20 IFOUT
(RF = 900MHz)
LO = 1090MHz
3LO-3RF
(RF = 1026.67MHz)
2LO-2RF
(RF = 995MHz)
LO INPUT POWER (dBm)
–6
–85
–80
RELATIVE SPUR LEVEL (dBc)
–75
–65
–70
–3 0
5590 G12
36
–60 IF = 190MHz
PRF = –10dBm
LO = 1090MHz
3LO-3RF
(RF = 1026.67MHz)
2LO-2RF
(RF = 995MHz)
LO FREQUENCY (MHz)
LO-IF
800
–60
–50
–40
LO LEAKAGE (dBm)
–30
–10
–20
900 11001000 1200
5590 G14
1300 1400
0
LO-RF
RF FREQUENCY (MHz)
600
0
10
20
ISOLATION (dB)
30
50
60
40
700 900800 1000
5590 G15
1100 1200
70
RF-IF
RF-LO
RF BLOCKER POWER (dBm)
–20
8
10
12
14
SSB NF (dB)
16
22
20
18
–15 –5–10 0
5590 G13
510
24
PLO = –3dBm
PLO = 0dBm
PLO = 3dBm
PLO = 6dBm
RF = 900MHz
BLOCKER = 800MHz
GAIN (dB)
8
0
5
10
DISTRIBUTION (%)
15
25
20
8.5 9
5590 G16
9.5
30 RF = 900MHz 85°C
25°C
–40°C
IIP3 (dB)
24
0
15
10
5
20
DISTRIBUTION (%)
25
35
30
2524.5 2625.5
5590 G17
2726.5
40 RF = 900MHz 85°C
25°C
–40°C
NOISE FIGURE (dB)
8
0
15
10
5
20
DISTRIBUTION (%)
25
35
30
98.5 109.5
5590 G18
11.51110.5
40 RF = 900MHz
85°C
25°C
–40°C
RF INPUT POWER (dBm/TONE)
–12
–80
–70
–50
–60
OUTPUT POWER (dBm/TONE)
–40
–30
–20
–10
10
0
–9 –3 0
5590 G10
–6 36
20
IFOUT
IM5
IM3
RF1 = 899MHz
RF2 = 901MHz
LO = 1090MHz
LTC5590
7
5590f
TYPICAL AC PERFORMANCE CHARACTERISTICS
Conversion Gain and IIP3 vs
RF Frequency SSB NF vs RF Frequency
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
700MHz Conversion Gain, IIP3
and NF vs LO Power
900MHz Conversion Gain, IIP3
and NF vs LO Power
1100MHz Conversion Gain, IIP3
and NF vs LO Power
Low Power Mode, High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
Δf = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
Conversion Gain, IIP3 and RF
Input P1dB vs Temperature
RF FREQUENCY (MHz)
600
12
13
14
IIP3 (dBm)
GC (dB)
16
17
18
21
20
19
22
700 900
5590 G19
15
800 1000 1100 1200
23
5
9
11
13
7
15
6
10
12
14
8
16
–40°C
25°C
85°C
105°C
IIP3
GC
RF FREQUENCY (MHz)
600
6
8
SSB NF (dB)
10
12
14
700 900
5590 G20
800 1000 1100 1200
16
–40°C
25°C
85°C
105°C
LO INPUT POWER (dBm)
–6
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
–4 0
5590 G22
12
–2 246
8
12
16
4
20
2
10
14
18
6
–40°C
25°C
85°C
IIP3
GC
NF
LO INPUT POWER (dBm)
–6
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
–4 0
5590 G23
12
–2 246
8
12
16
4
20
2
10
14
18
6
–40°C
25°C
85°C
IIP3
GC
NF
LO INPUT POWER (dBm)
–6
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
–4 0
5590 G24
12
–2 246
8
12
16
4
20
2
10
14
18
6
–40°C
25°C
85°C
IIP3
GC
NF
CASE TEMPERATURE (°C)
–40
6
8
10
GC (dB), IIP3 (dBm), P1dB (dBm)
14
16
18
24
22
20
–10 50
5590 G27
12
20 80 110
VCCIF = 3.3V
VCCIF = 5V
IIP3
GC
P1dB
RF = 900MHz
RF INPUT POWER (dBm/TONE)
–12
–80
–70
–60
–50
–40
–30
–20
OUTPUT POWER (dBm/tone)
–9 –3
5590 G21
–6 036
20
10
0
–10
IM3
IM5
IFOUT
RF1 = 899MHz
RF2 = 901MHz
LO = 1090MHz
VCC, VCCIF SUPPLY VOLTAGE (V)
3
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
3.1 3.3
5590 G25
12
3.2 3.4 3.5 3.6
8
12
16
4
20
2
10
14
18
6
–40°C
25°C
85°C
IIP3
GC
NF
RF = 900MHz
VCC = VCCIF
VCCIF SUPPLY VOLTAGE (V)
3
6
8
10
GC (dB), IIP3 (dBm)
SSB NF (dB)
14
16
18
24
22
20
3.5
5590 G26
12
44.5 55.5
8
12
16
4
20
2
10
14
18
6
–40°C
25°C
85°C
IIP3
GC
NF
RF = 900MHz
VCC = 3.3V
LTC5590
8
5590f
TYPICAL AC PERFORMANCE CHARACTERISTICS
Conversion Gain and IIP3 vs
RF Frequency SSB NF vs RF Frequency
SSB Noise Figure vs RF Blocker
Level
1200MHz Conversion Gain, IIP3
and NF vs LO Power
1400MHz Conversion Gain, IIP3
and NF vs LO Power
1600MHz Conversion Gain, IIP3
and NF vs LO Power
Low Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
Δf = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
Conversion Gain, IIP3 and
RF Input P1dB vs Temperature
RF FREQUENCY (MHz)
1100
8
10
12
IIP3 (dBm)
GC (dB)
16
18
20
30
26
28
24
22
1200 1400
5590 G28
14
6
7
8
10
11
12
15
16
17
14
13
9
1300 1500 1600 1700
IIP3
GC
–40°C
25°C
85°C
105°C
RF FREQUENCY (MHz)
1100
SSB NF (dB)
1200 1400
5590 G29
6
7
8
10
11
12
15
16
14
13
9
1300 1500 1600 1700
–40°C
25°C
85°C
105°C
LO INPUT POWER (dBm)
–6
GC (dB), IIP3 (dBm)
SSB NF (dB)
–4 0
5590 G31
6
10
14
18
26
30
22
0
4
8
12
20
24
IIP3
16
–2 24
6
–40°C
25°C
85°C
GC
NF
LO INPUT POWER (dBm)
–6
GC (dB), IIP3 (dBm)
SSB NF (dB)
–4 0
5590 G32
6
10
14
18
26
30
22
0
4
8
12
20
24
IIP3
16
–2 24
6
–40°C
25°C
85°C
GC
NF
VCC, VCCIF SUPPLY VOLTAGE (V)
3
GC (dB), IIP3 (dBm)
SSB NF (dB)
3.1 3.3
5590 G34
6
10
14
18
26
30
22
0
4
8
12
20
24
IIP3
16
3.2 3.4 3.5 3.6
–40°C
25°C
85°C
GC
NF
RF = 1400MHz
VCC = VCCIF
VCCIF SUPPLY VOLTAGE (V)
3
GC (dB), IIP3 (dBm)
SSB NF (dB)
3.5
5590 G35
6
10
14
18
26
30
22
0
4
8
12
20
24
IIP3
16
44.5 5 5.5
–40°C
25°C
85°C
GC
NF
RF = 1400MHz
VCC = 3.3V
CASE TEMPERATURE (°C)
–40
GC (dB), IIP3 (dBm), P1dB (dBm)
–10
5590 G36
6
10
14
18
26
30
22
IIP3
20 50 80 110
VCCIF = 3.3V
VCCIF = 5V
GC
P1dB
RF = 1400MHz
RF BLOCKER LEVEL (dBm)
–20
SSB NF (dB)
–15 –5
5590 G30
8
12
10
14
16
18
22
24
20
–10 05
10
PLO = –3dBm
PLO = 0dBm
PLO = 3dBm
PLO = 6dBm
RF = 1400MHz
BLOCKER = 1500MHz
LO INPUT POWER (dBm)
–6
GC (dB), IIP3 (dBm)
SSB NF (dB)
–4 0
5590 G33
6
10
14
18
26
30
22
0
4
8
12
20
24
IIP3
16
–2 24
6
–40°C
25°C
85°C
GC
NF
LTC5590
9
5590f
TYPICAL DC PERFORMANCE CHARACTERISTICS
VCC Supply Current vs Supply
Voltage (Mixer and LO Amplifier)
VCCIF Supply Current vs
Supply Voltage (IF Amplifier)
Total Supply Current vs
Temperature (VCC + VCCIF)
VCC Supply Current vs Supply
Voltage (Mixer and LO Amplifier)
VCCIF Supply Current vs Supply
Voltage (IF Amplifier)
Total Supply Current vs
Temperature (VCC + VCCIF)
ISEL = High, ENA = ENB = High, test circuit shown in Figure 1.
ISEL = Low, ENA = ENB = High, test circuit shown in Figure 1.
VCC SUPPLY VOLTAGE (V)
3
SUPPLY CURRENT (mA)
3.1
5590 G37
180
182
184
188
190
192
194
186
196
3.2 3.3 3.4 3.5 3.6
105°C
85°C
25°C
–40°C
VCCIF = VCC
VCCIF SUPPLY VOLTAGE (V)
3
SUPPLY CURRENT (mA)
3.3
5590 G38
120
140
160
180
200
220
240
260
3.6 3.9 4.2 4.5 4.8 5.1 5.4
VCC = 3.3V
105°C
85°C
25°C
–40°C
CASE TEMPERATURE (°C)
–40
SUPPLY CURRENT (mA)
–10
5590 G39
280
300
320
340
360
440
420
400
380
460
480
20 50 80 110
VCC = 3.3V, VCCIF = 5V
(DUAL SUPPLY)
VCC = VCCIF = 3.3V
(SINGLE SUPPLY)
VCC SUPPLY VOLTAGE (V)
3
SUPPLY CURRENT (mA)
3.1
5590 G40
116
118
120
124
126
128
122
130
3.2 3.3 3.4 3.5 3.6
105°C
85°C
25°C
–40°C
VCCIF = VCC
VCCIF SUPPLY VOLTAGE (V)
3
SUPPLY CURRENT (mA)
3.3
5590 G41
70
90
110
130
150
170
3.6 3.9 4.2 4.5 4.8 5.1 5.4
VCC = 3.3V
105°C
85°C
25°C
–40°C
CASE TEMPERATURE (°C)
–40
SUPPLY CURRENT (mA)
–10
5590 G42
180
200
220
260
240
280
300
20 50 80 110
VCC = 3.3V, VCCIF = 5V
(DUAL SUPPLY)
VCC = VCCIF = 3.3V
(SINGLE SUPPLY)
LTC5590
10
5590f
PIN FUNCTIONS
RFA, RFB (Pins 1, 6): Single-Ended RF Inputs for Chan-
nels A and B. These pins are internally connected to the
primary sides of the RF input transformers, which have
low DC resistance to ground. Series DC-blocking capaci-
tors should be used to avoid damage to the integrated
transformer when DC voltage is present at the RF inputs.
The RF inputs are impedance matched when the LO input
is driven with a 0±6dBm source between 700MHz and
1.5GHz and the channels are enabled.
CTA, CTB (Pins 2, 5): RF Transformer Secondary Center-
Tap on Channels A and B. These pins may require bypass
capacitors to ground to optimize IIP3 performance. Each
pin has an internally generated bias voltage of 1.2V and
must be DC-isolated from ground and VCC.
GND (Pins 3, 4, 7, 13, 15, 24, Exposed Pad Pin 25):
Ground. These pins must be soldered to the RF ground
plane on the circuit board. The exposed pad metal of the
package provides both electrical contact to ground and
good thermal contact to the printed circuit board.
IFGNDB, IFGNDA (Pins 8, 23): DC Ground Returns for the
IF Amplifiers. These pins must be connected to ground to
complete the DC current paths for the IF amplifiers. Chip
inductors may be used to tune LO-IF and RF-IF leakage.
Typical DC current is 96mA for each pin.
IFB+, IFB–, IFA–, IFA+ (Pins 9, 10, 21, 22): Open-Collector
Differential Outputs for the IF Amplifiers of Channels B and
A. These pins must be connected to a DC supply through
impedance matching inductors, or transformer center-taps.
Typical DC current consumption is 48mA into each pin.
IFBB, IFBA (Pins 11, 20): Bias Adjust Pins for the IF
Amplifiers. These pins allow independent adjustment
of the internal IF buffer currents for channels B and A,
respectively. The typical DC voltage on these pins is 2.2V.
If not used, these pins must be DC isolated from ground
and VCC.
VCCB and VCCA (Pins 12, 19): Power Supply Pins for the
LO Buffers and Bias Circuits. These pins must be con-
nected to a regulated 3.3V supply with bypass capacitors
located close to the pins. Typical current consumption is
94mA per pin.
ENB, ENA (Pins 14, 17): Enable Pins. These pins allow
Channels B and A, respectively, to be independently en-
abled. An applied voltage of greater than 2.5V activates
the associated channel while a voltage of less than 0.3V
disables the channel. Typical input current is less than
10A. These pins must not be allowed to float.
LO (Pin 16): Single-Ended Local Oscillator Input. This
pin is internally connected to the primary side of the LO
input transformer and has a low DC resistance to ground.
Series DC-blocking capacitors should be used to avoid
damage to the integrated transformer when DC voltage
present at LO input. The LO input is internally matched
to 50 for all states of ENA and ENB.
ISEL (Pin 18): Low Current Select Pin. When this pin is
pulled low (<0.3V), both mixer channels are biased at the
normal current level for best RF performance. When greater
than 2.5V is applied, both channels operate at reduced
current, which provides reasonable performance at lower
power consumption. This pin must not be allowed to float.
LTC5590
11
5590f
BLOCK DIAGRAM
5590 BD
BIAS
BIAS
GND
ENA
ISEL
LO
VCCB
IFBB
VCCA
IFBA
IFB–
IFB+
IFA–
IFA+
IFGNDB
IFGNDA
GND
RFB
LO
AMP
LO
AMP
ENB
GND
IF
AMP
11109 12
14
13
GND 15
16
17
18
6
87
CTB
5
GND
4
GND
3
CTA
2
RFA
1
IF
AMP
22 21 20 192324
LTC5590
12
5590f
TEST CIRCUIT
L1, L2 vs IF FREQUENCIES
IF (MHz) L1, L2 (nH)
140 270
190 150
240 100
300 56
380 33
450 22
REF DES VALUE SIZE VENDOR
C1A, C1B 100pF 0402 AVX
C2 10pF 0402 AVX
C3A, C3B
C5A, C5B
22pF 0402 AVX
C4, C6 1µF 0603 AVX
C7A, C7B 1000pF 0402 AVX
L1A, L1B,
L2A, L2B
150nH 0603 Coilcraft
T1A, T1B TC4-1W-7ALN+ Mini-Circuits
Figure 1. Standard Downmixer Test Circuit Schematic (190MHz)
RF
GND
GND
BIAS
DC1710A
EVALUATION BOARD
STACK-UP
(NELCO N4000-13)
0.015”
0.015”
0.062”
4:1
T1A
IFA
50
C7A
L2AL1A
C5AC6
C3A C4
LTC5590
1
192021222324
121110987
LO
50
17
18
16
15
14
C2
5
6 13
4
3
RFA
50
VCCIF
3.3V TO 5V
C1A
RFB
50
C1B
2
IFGNDAGND IFA+IFA–IFBA
LO
GND
GND
ISEL
ENB
ENA
VCCA
IFGNDBGND IFB+IFB–IFBB VCCB
RFA
CTA
GND
GND
CTB
RFB
5590 TC01
4:1
T1B
IFB
50
C5B
C3B
C7B
L1BL2B
ISEL
(0V/3.3V)
VCC
3.3V
ENA
(0V/3.3V)
ENB
(0V/3.3V)
LTC5590
13
5590f
Introduction
The LTC5590 consists of two identical mixer channels
driven by a common LO input signal. Each high linearity
mixer consists of a passive double-balanced mixer core,
IF buffer amplifier, LO buffer amplifier and bias/enable
circuits. See the Pin Functions and Block Diagram sections
for a description of each pin. Each of the mixers can be
shutdown independently to reduce power consumption and
low current mode can be selected that allows a trade-off
between performance and power consumption. The RF and
LO inputs are single-ended and are internally matched to
50. Low side or high side LO injection can be used. The
IF outputs are differential. The evaluation circuit, shown in
Figure 1, utilizes bandpass IF output matching and an IF
transformer to realize a 50 single-ended IF output. The
evaluation board layout is shown in Figure 2.
APPLICATIONS INFORMATION
Figure 2. Evaluation Board Layout
The secondary winding of the RF transformer is internally
connected to the channel A passive mixer core. The center-
tap of the transformer secondary is connected to Pin 2
(CTA) to allow the connection of bypass capacitor, C8A.
The value of C8A is LO frequency-dependent and is not
required for most applications, though it can improve IIP3
in some cases. When used, it should be located within
2mm of Pin 2 for proper high frequency decoupling. The
nominal DC voltage on the CTA pin is 1.2V.
For the RF inputs to be properly matched, the appropriate
LO signal must be present at the LO input. The RF input
impedance is also dependent on the LO frequency, as
shown in Figure 4, which shows the RF input return loss
for various LO frequencies with a C1A value of 100pF. A
broadband impedance match is achieved over the 700MHz
to 1.4GHz range. Outside this frequency range, the desired
impedance match can be obtained through adjustment of
external component values.
RF Inputs
The RF inputs of channels A and B are identical. The RF
input of channel A, shown in Figure 3, is connected to the
primary winding of an integrated transformer. A 50 match
is realized when a series external capacitor, C1A, is con-
nected to the RF input. C1A is also needed for DC blocking
if the source has DC voltage present, since the primary
side of the RF transformer is internally DC-grounded. The
DC resistance of the primary is approximately 4.5.
Figure 3. Channel A RF Input Schematic
Figure 4. RF Port Return Loss
LTC5590
C1A
C8A
RFA
CTA
RFA
TO CHANNEL A
MIXER
1
2
5590 F03
5590 F02
FREQUENCY (MHz)
600
–25
–20
RETURN LOSS (dB)
–15
–10
0
–5
700 1100
5590 F04
800 900 1000 1200 1300 1400
LO = 700MHz
LO = 1090MHz
LO = 1500MHz
LTC5590
14
5590f
The RF input impedance and input reflection coefficient,
versus RF frequency, are listed in Table 1. The reference
plane for this data is Pin 1 of the IC, with no external
matching, and the LO is driven at 1.09GHz.
Table 1. RF Input Impedance and S11
(at Pin 1, No External Matching, fLO = 1.09GHz)
FREQUENCY
(GHz)
RF INPUT
IMPEDANCE
S11
MAG ANGLE
0.6 34.2 + j24.5 0.33 107
0.7 41.3 + j22.4 0.26 97
0.8 48.5 + j18.1 0.18 84
0.9 54.3 + j10.1 0.10 61
1.0 54.2 – j4.6 0.06 –45
1.1 38.4 – j16 0.22 –116
1.2 29.3 – j9.4 0.29 –149
1.3 27.7 – j4.5 0.29 –165
1.4 27.4 – j1.6 0.29 –175
1.5 27.8 – j0.1 0.28 –180
1.6 29.4 + j0.2 0.26 179
1.7 31.2 –j0.5 0.23 –178
APPLICATIONS INFORMATION
Figure 5. LO Input Schematic
LO Input
The LO input, shown in Figure 5, is connected to the
primary winding of an integrated transformer. A 50
impedance match is realized at the LO port by adding
an external series capacitor, C2. This capacitor is also
needed for DC blocking if the LO source has DC voltage
present, since the primary side of the LO transformer is
DC-grounded internally. The DC resistance of the primary
is approximately 4.5.
The secondary of the transformer drives a pair of high
speed limiting differential amplifiers for channels A and B.
The LTC5590’s LO amplifiers are optimized for the 700MHz
to 1.5GHz LO frequency range; however, LO frequencies
outside this frequency range may be used with degraded
performance.
The LO port is always 50 matched when VCC is applied,
even when one or both of the channels is disabled. This
helps to reduce frequency pulling of the LO source when
the mixer is switched between different operating states.
Figure 6 illustrates the LO port return loss for the different
operating modes.
Figure 6. LO Input Return Loss
The nominal LO input level is 0dBm, though the limiting
amplifiers will deliver excellent performance over a ±6dBm
input power range. Table 2 lists the LO input impedance
and input reflection coefficient versus frequency.
Table 2. LO Input Impedance vs Frequency
(at Pin 16, No External Matching, ENA = ENB = High)
FREQUENCY
(GHz)
INPUT
IMPEDANCE
S11
MAG ANGLE
0.7 29.7 + j34.7 0.46 97
0.8 39.9 + j34.1 0.37 86
0.9 48.7 + j26.6 0.26 78
1.0 50.8 + j15.1 0.15 78
1.1 46.5 + j6.2 0.07 116
1.2 39.9 + j2.5 0.12 165
1.3 34.0 + j1.4 0.19 174
1.4 29.2 + j2.1 0.26 173
1.5 25.6 + j3.8 0.33 168
LO
TO
MIXER B
LTC5590
ISEL
5590 F05
18
LO 16
17
ENA
ENB
C2
14
BIAS
BIAS
TO
MIXER A
FREQUENCY (MHz)
700
–25
–20
RETURN LOSS (dB)
–15
–10
0
–5
800 1200
5590 F06
900 1000 1100 1300 1400 1500
BOTH CHANNELS ON
ONE CHANNEL ON
BOTH CHANNELS OFF
LTC5590
15
5590f
IF Outputs
The IF amplifiers in channels A and B are identical. The IF
amplifier for channel A, shown in Figure 7, has differen-
tial open collector outputs (IFA+ and IFA–), a DC ground
return pin (IFGNDA), and a pin for adjusting the internal
bias (IFBA). The IF outputs must be biased at the sup-
ply voltage (VCCIFA), which is applied through matching
inductors L1A and L2A. Alternatively, the IF outputs can
be biased through the center tap of a transformer (T1A).
The common node of L1A and L2A can be connected to
the center tap of the transformer. Each IF output pin draws
approximately 48mA of DC supply current (96mA total).
An external load resistor, R2A, can be used to improve
impedance matching if desired.
IFGNDA (Pin 23) must be grounded or the amplifier will
not draw DC current. Inductor L3A may improve LO-IF
and RF-IF leakage performance in some applications, but
is otherwise not necessary. Inductors should have small
resistance for DC. High DC resistance in L3A will reduce
the IF amplifier supply current, which will degrade RF
performance.
APPLICATIONS INFORMATION
For optimum single-ended performance, the differential
IF output must be combined through an external IF
transformer or a discrete IF balun circuit. The evaluation
board (see Figures 1 and 2) uses a 4:1 IF transformer for
impedance transformation and differential to single-ended
conversion. It is also possible to eliminate the IF transformer
and drive differential filters or amplifiers directly.
At IF frequencies, the IF output impedance can be modeled
as 379 in parallel with 2.2pF. The equivalent small-signal
model, including bondwire inductance, is shown in Figure 8.
Frequency-dependent differential IF output impedance is
listed in Table 3. This data is referenced to the package
pins (with no external components) and includes the ef-
fects of IC and package parasitics.
Figure 7. IF Amplifier Schematic with Bandpass Match
Figure 8. IF Output Small-Signal Model
Bandpass IF Matching
The bandpass IF matching configuration, shown in Figures
1 and 7, is best suited for IF frequencies in the 90MHz to
500MHz range. Resistor R2A may be used to reduce the IF
output resistance for greater bandwidth and inductors L1A
and L2A resonate with the internal IF output capacitance
at the desired IF frequency. The value of L1A, L2A can be
estimated as follows:
L1A =L2A =1
2fIF
()
2•2•C
IF
where CIF is the internal IF capacitance (listed in Table 3).
4:1
T1A IFA
C7A
L2AL1A
C5A
R2A
L3A (OR SHORT)
VCCIFA
20212223
IF
AMP
BIAS
96mA
4mA
IFBA
VCCA
LTC5590
IGNDA
IFA–
IFA+
R1A
(OPTION TO
REDUCE
DC POWER)
5590 F07
22 21
IFA+IF A–
0.9nH0.9nH
RIF
CIF
LTC5590
5590 F08
LTC5590
16
5590f
Values of L1A and L2A are tabulated in Figure 1 for vari-
ous IF frequencies. The measured IF output return loss
for bandpass IF matching is plotted in Figure 9.
Table 3. IF Output Impedance vs Frequency
FREQUENCY (MHz)
DIFFERENTIAL OUTPUT
IMPEDANCE (RIF || XIF (CIF))
90 403 || – j610 (2.9pF)
140 384 || – j474 (2.4pF)
190 379 || – j381 (2.2pF)
240 380 || – j316 (2.1pF)
300 377 || – j253 (2.1pF)
380 376 || – j210 (2.0pF)
450 360 || – j177 (2.0pF)
APPLICATIONS INFORMATION
Figure 9. IF Output Return Loss with Bandpass Matching has been laid out to accommodate this matching topology
with only minor modifications.
IF Amplifier Bias
The IF amplifier delivers excellent performance with VCCIF
= 3.3V, which allows a single supply to be used for VCC and
VCCIF. At VCCIF = 3.3V, the RF input P1dB of the mixer is
limited by the output voltage swing. For higher P1dB, in
this case, resistor R2A (Figure 7) can be used to reduce
the output impedance and thus the voltage swing, thus
improving P1dB. The trade-off for improved P1dB will be
lower conversion gain.
With VCCIF increased to 5V the P1dB increases by over
3dB, at the expense of higher power consumption. Mixer
P1dB performance at 900MHz is tabulated in Table 4 for
VCCIF values of 3.3V and 5V. For the highest conversion
gain, high-Q wire-wound chip inductors are recommended
for L1A and L2A. Low cost multilayer chip inductors may
be substituted, with a slight reduction in conversion gain.
Figure 10. IF Output with Lowpass Matching
Figure 11. IF Output Return Loss with Lowpass Matching
4:1
T1A IFA
50Ω
VCCIFA
3.1 TO 5.3V
C5A
2122 IFA–
IFA+
C7A
C9A
R2A
L1A L2A
LTC5590
5590 F10
Lowpass IF Matching
For IF frequencies below 90MHz, the inductance values
become unreasonably high and the lowpass topology
shown in Figure 9 is preferred. This topology also can
provide improved RF to IF and LO to IF isolation. VCCIFA
is supplied through the center tap of the 4:1 transformer.
A lowpass impedance transformation is realized by shunt
elements R2A and C9A (in parallel with the internal RIF
and CIF), and series inductors L1A and L2A. Resistor
R2A is used to reduce the IF output resistance for greater
bandwidth, or it can be omitted for the highest conver-
sion gain. The final impedance transformation to 50 is
realized by transformer T1A. The measured return loss
is shown in Figure 11 for different values of inductance
(C9A = OpF). The case with 82nH inductors and R2A = 1k
is also shown. The LTC5590 demo board (see Figure 2)
FREQUENCY (MHz)
50
–25
–20
RETURN LOSS (dB)
–15
–10
0
–5
100 300
5590 F09
150 200 250 350 400 450 500
270nH
150nH
100nH
56nH
33nH
22nH
RETURN LOSS (dB)
–30
–20
–25
–15
–10
0
–5
FREQUENCY (MHz)
50 100 150
5590 F11
200 250
68nH
100nH
180nH
82nH + 1kΩ
LTC5590
17
5590f
APPLICATIONS INFORMATION
Table 4. Performance Comparison with VCCIF = 3.3V and 5V
(RF = 900MHz, High Side LO, IF = 190MHz)
VCCIF
(V)
R2A
(Ω)
ICCIF
(mA)
GC
(dB)
P1dB
(dBm)
IIP3
(dBm)
NF
(dB)
3.3 Open 191 8.7 10.7 26.0 9.7
1k 191 7.5 11.4 26.0 9.75
5 Open 200 8.7 14.1 25.5 9.8
The IFBA pin (Pin 20) is available for reducing the DC
current consumption of the IF amplifier, at the expense of
IIP3. The nominal DC voltage at Pin 20 is 2.1V, and this pin
should be left open-circuited for optimum performance.
The internal bias circuit produces a 4mA reference for
the IF amplifier, which causes the amplifier to draw ap-
proximately 96mA. If resistor R1A is connected to Pin 20
as shown in Figure 7, a portion of the reference current
can be shunted to ground, resulting in reduced IF ampli-
fier current. For example, R1A = 1k will shunt away 1mA
from Pin 20 and the IF amplifier current will be reduced
by 28% to approximately 69mA. Table 5 summarizes RF
performance versus IF amplifier current.
Table 5. Mixer Performance with Reduced IF Amplifier Current
RF = 900MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
R1
ICCIF
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dB)
NF
(dB)
Open 191 8.7 26.0 10.7 9.7
4.7k 173 8.7 25.6 10.6 9.7
2.2k 156 8.6 25.0 10.6 9.6
1k 137 8.5 24.1 10.5 9.6
RF = 1400MHz, Low Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
R1
ICCIF
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
Open 191 8.4 27.3 11 9.7
4.7k 173 8.5 26.8 10.9 9.6
2.2k 156 8.5 26.2 10.9 9.6
1k 137 8.4 25.1 10.8 9.6
Low Power Mode
Both mixer channels can be set to low power mode us-
ing the ISEL pin. This allows flexibility to select a reduced
current mode of operation when lower RF performance is
acceptable, reducing power consumption by 37%. Figure
12 shows a simplified schematic of the ISEL pin interface.
When ISEL is set low (<0.3V), both channels operate at
nominal DC current. When ISEL is set high (>2.5V), the DC
current in both channels is reduced, thus reducing power
consumption. The performance in low power mode and
normal power mode are compared in Table 6.
Figure 12. ISEL Interface Schematic
Table 6. Performance Comparison Between Different Power Modes
RF = 900MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
ISEL
ITOTAL
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
Low 379 8.7 26.0 10.7 9.7
High 239 7.7 21.5 10.4 9.9
Enable Interface
Figure 13 shows a simplified schematic of the ENA pin
interface (ENB is identical). To enable channel A, the ENA
voltage must be greater than 2.5V. If the enable function
is not required, the enable pin can be connected directly
to VCC. The voltage at the enable pin should never exceed
the power supply voltage (VCC) by more than 0.3V. If this
LTC5590
18
ISEL
VCCB
500Ω
VCCA
5590 F13
19
BIAS A
BIAS B
Figure 13. ENA Interface Schematic
LTC5590
17
ENA 500Ω
VCCA
5590 F13
19
ESD
CLAMP
LTC5590
18
5590f
should occur, the supply current could be sourced through
the ESD diode, potentially damaging the IC.
The Enable pins must be pulled high or low. If left float-
ing, the on/off state of the IC will be indeterminate. If a
three-state condition can exist at the enable pins, then a
pull-up or pull-down resistor must be used.
Supply Voltage Ramping
Fast ramping of the supply voltage can cause a current
glitch in the internal ESD protection circuits. Depending on
the supply inductance, this could result in a supply volt-
APPLICATIONS INFORMATION
age transient that exceeds the maximum rating. A supply
voltage ramp time of greater than 1ms is recommended.
Spurious Output Levels
Mixer spurious output levels versus harmonics of the RF
and LO are tabulated in Tables 7 and 8 for frequencies up
to 10GHz. The spur levels were measured on a standard
evalution board using the test circuit shown in Figure 1.
The spur frequencies can be calculated using the follow-
ing equation:
f
SPUR = (M • fRF) – (N • fLO)
Table 7. IF Output Spur Levels (dBc), High Side LO
(RF = 900MHz, PRF = –3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25°C)
N
M
012345 6 78910
0- –40.0 –42 –54.8 –55.7 –66.5 –81.4 –73.1 –74.3 –72.5
1–31.8 0 –49.0 –47.4 –72.2 –64.0 –88.5 –70.3 –81.6 –81.2 *
2–68.6 –63.0 –78.6 –73.9 –87.7 –87.8 –82.3 * * * *
3* * * –81.5 *******
4* * * –78.0 * * * * * * *
5****** * ****
6****** * ****
7****** * ****
8****** * ****
9****** * ****
10 ****** * ****
*Less than –100dBc
Table 8. IF Output Spur Levels (dBc), Low Side LO
(RF = 1400MHz, PRF = –3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25°C)
N
M
012345 6 78910
0- –46.2 –42.2 –55.9 –56.9 –71.3 –67.4 –85.3 –69.9
1–40.8 0 –44.5 –52.2 –75.0 –67.5 –78.3 –73.4 * *
2–77.5 –74.4 –69.3 –71.7 * –86.4 –83.2 * –93.2 * *
3* –88.7 * –76.8 –89.2 * * * * * *
4****** * ****
5****** * ****
6****** * ****
7****** * ****
8* * –93.7 * * * * * * *
9* * –95.6 * * * * *
10 * –94.5 * * * * *
*Less than –100dBc
LTC5590
19
5590f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
PACKAGE DESCRIPTION
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
UH Package
24-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1747 Rev A)
5.00 p 0.10
5.00 p 0.10
NOTE:
1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.55 p 0.10
23
1
2
24
BOTTOM VIEW—EXPOSED PAD
3.25 REF
3.20 p 0.10
3.20 p 0.10
0.75 p 0.05 R = 0.150
TYP
0.30 p 0.05
(UH24) QFN 0708 REV A
0.65 BSC
0.200 REF
0.00 – 0.05
0.75 p0.05
3.25 REF
3.90 p0.05
5.40 p0.05
0.30 p 0.05
PACKAGE OUTLINE
0.65 BSC
RECOMMENDED SOLDER PAD LAYOUT
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
PIN 1 NOTCH
R = 0.30 TYP
OR 0.35 s 45o
CHAMFER
R = 0.05
TYP
3.20 p 0.05
3.20 p 0.05
LTC5590
20
5590f
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2011
LT 0811 • PRINTED IN USA
RELATED PARTS
TYPICAL APPLICATION
Downconverting Mixer with 140MHz Lowpass IF Matching
PART
NUMBER DESCRIPTION COMMENTS
Infrastructure
LTC5569 300MHz to 4GHz, Dual Active Downconverting
Mixer
2dB Gain, 26.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/180mA Supply
LT5527 400MHz to 3.7GHz, 5V Downconverting Mixer 2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA Supply
LT5557 400MHz to 3.8GHz, 3.3V Downconverting Mixer 2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA Supply
LTC6416 2GHz 16-Bit ADC Buffer 40.25dBm OIP3 to 300MHz, Programmable Fast Recovery Output Clamping
LTC6412 31dB Linear Analog VGA 35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dB
LTC554X 600MHz to 4GHz Downconverting Mixer Family 8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA Supply
LT5554 Ultralow Distort IF Digital VGA 48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps
LT5578 400MHz to 2.7GHz Upconverting Mixer 27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer
LT5579 1.5GHz to 3.8GHz Upconverting Mixer 27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports
RF Power Detectors
LTC5581 6GHz Low Power RMS Detector 40dB Dynamic Range, ±1dB Accuracy Overtemperature, 1.5mA Supply Current
LTC5582 10GHz RMS Power Detector 40MHz to 10GHz, Up to 57dB Dynamic Range, ±0.5dB Accuracy Overtemperature
LTC5583 Dual 6GHz RMS Power Detector Measures VSWR 40MHz to 6GHz, Up to 60dB Dynamic Range, >40dB Channel-to-Channel Isolation,
Difference Output for vs WR Measurement
ADCs
LTC2285 14-Bit, 125Msps Dual ADC 72.4dB SNR, >88dB SFDR, 790mW Power Consumption
LTC2185 16-Bit, 125Msps Dual ADC Ultralow Power 74.8dB SNR, 185mW/Channel Power Consumption
LTC2242-12 12-Bit, 250Msps ADC 65.4dB SNR, 78dB SFDR, 740mW Power Consumption
Conversion Gain, NF and IIP3
vs RF Frequency
4:1
TC4-1W-7ALN+
IFA
50Ω
82nH 82nH
22pF
1μF
1k
22pF 1μF
LTC5590
CHANNEL A
CHANNEL B NOT SHOWN
1
192021222324
LO
50Ω
17
18
16
15
10pF
4
3
RFA
50Ω
VCCIF
3.3V VCC
3.3V
TO
CHANNEL B
TO
CHANNEL B
100pF
2
IFGNDAGND IFA+IFA–IFBA
LO
GND
ISEL
ENA
VCCA
RFA
CTA
GND
GND
5590 TA02
ISEL
ENA RF FREQUENCY (MHz)
700
7
8
9
10
GC (dB), SSB NF (dB)
IIP3 (dBm)
12
13
14
16
15
800 1000
5590 TA02b
11
900 1100 1200
20
22
24
26
21
23
25
19
18
17
TC = 25°C
IF = 140MHz
GC
IIP3
NF
