MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 75 W
Pin Input power Zg=Zl=50Ω 2.5
W
ID Drain current - 7 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 2.0 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power f=175MHz ,VDD=12.5V 30 35 - W
ηD Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
14.0+/-0.4
3.0+/-0.4
5.1+/-0.5
R1.6
2.3+/-0.3
4-C1
2
6.6+/-0.3
0.10
2.8+/-0.3
3
18.0+/-0.3
22.0+/-0.3
7.6+/-0.3
1
7.2+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:m
m
MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
2/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
0
20
40
60
80
100
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
CHANNEL DISSIPATION
Pch(W)
Vds VS. Crss CHARACTERISTICS
0
4
8
12
16
20
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
140
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Vgs=5.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
012345
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
3/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Vdd-Po CHARACTERISTICS
0
20
40
60
80
4 6 8 10 12 14
Vdd(V)
Po( W)
0
2
4
6
8
10
12
14
16
Idd( A )
Po
Idd
Ta= 25°C
f= 175M Hz
Pin=1.0W
Idq= 0.5A
Zg= ZI= 50 ohm
Vgs-Ids CHARACTERIS TICS 2
0
2
4
6
8
2345
Vgs(V)
Ids ( A )
Vds=10V
Tc=-25~+75°C -25°C
+75°C
+25°C
P i n-Po CHARACTERISTICS
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5
Pin( W)
Pout(W) , Idd(A)
0
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta= 25°C
f= 175M Hz
Vdd= 12.5V
Idq= 0.5A
P i n-Po CHARACTERISTICS
0
10
20
30
40
50
0102030
Pin( dBm)
Po(dBm) , Gp(dB) , Idd(A)
0
20
40
60
80
100
ηd(%)
Ta= + 25°C
f= 175M Hz
Vdd= 12.5V
Idq= 0.5A
Po
ηｄ
Ｉｄｄ
Gp
MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
4/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=175MHz)
RD30HVF1
175MHz
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2
C3:2200pF,330uF in parallel
C3
C2:2200pF*2 in parallel
L1
9.1kOHM
100
34
10
56pF
100pF 8pF
10pF
Dimensions:mm
56pF
RF-in
Vdd
Vgg
100OHM
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
C1
RF-OUT
C2
C1:2200pF 10uF in parallel Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
90
100
12
27
32
L1
8.2kOHM
8
4.8
10.8
43pF 5pF 50pF
54
44
32
51
90
100pF33pF
100pF
MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
5/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W
146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W
175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W
f=146MHz Zout
f=175MHz Zin f=135MHz Zin
f=135MHz Zout
f=175MHz Zout
f=146MHz Zin
Zo=10Ω
MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
6/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.867 -172.4 8.747 72.7 0.015 -11.6 0.687 -166.3
150 0.879 -176.3 5.523 61.2 0.014 -18.8 0.723 -168.8
175 0.885 -177.5 4.571 56.4 0.013 -22.2 0.740 -169.6
200 0.888 -179.1 3.852 52.4 0.012 -24.2 0.760 -170.5
250 0.905 178.5 2.877 44.1 0.010 -26.2 0.806 -172.5
300 0.915 176.2 2.202 37.1 0.009 -27.0 0.825 -174.8
350 0.926 174.1 1.754 31.4 0.007 -24.4 0.853 -177.1
400 0.933 171.8 1.422 25.8 0.006 -18.5 0.879 -179.4
450 0.936 169.5 1.167 20.9 0.005 -8.2 0.887 178.4
500 0.945 167.6 0.985 17.2 0.004 8.0 0.902 176.1
550 0.950 165.6 0.842 13.3 0.005 21.6 0.914 174.1
600 0.951 163.6 0.725 9.8 0.005 35.6 0.918 172.2
650 0.954 161.7 0.635 7.2 0.005 45.7 0.928 170.2
700 0.957 159.9 0.559 3.7 0.007 53.5 0.933 168.4
750 0.962 158.2 0.495 1.3 0.007 58.4 0.936 166.6
800 0.963 156.5 0.449 -0.5 0.008 61.6 0.943 164.8
850 0.963 154.8 0.407 -3.8 0.009 60.7 0.947 163.3
900 0.963 153.2 0.366 -5.2 0.011 61.5 0.947 161.7
950 0.962 151.6 0.337 -6.6 0.011 63.1 0.953 159.9
1000 0.964 150.1 0.315 -9.9 0.013 65.6 0.955 158.7
1100 0.966 146.9 0.275 -12.1 0.015 62.3 0.958 155.5
S11 S21 S12 S22
MITSUBISHI RF POWE R MOS FET
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC REV.3 7 Apr. 2004
7/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
