U2795B
Rev . A3, 20-May-99 1 (10)
2.5-GHz Double-Balanced Mixer
Description
The U2795B is a 2.5-GHz mixer for WLAN and RF tele-
communications equipment, e.g., DECT and PCN. The
IC is manufactured using TEMIC Semiconductors’
advanced bipolar technology. A double-balanced
approach was chosen to assure good isolation
characteristics and a minimum of spurious products. The
input and output are single ended, and their
characteristics are programmable. No output transformer
or balun is required.
Electrostatic sensitive device.
Observe precautions for handling.
Features
D
Supply-voltage range: 2.7 to 5.5 V
D
Single-ended output, no balun required
D
Single-ended input for RF and LO
D
Excellent isolation characteristics
D
Power -down mode
D
IP3 and compression point programmable
D
2.5-GHz operating frequency
Benefits
D
Reduced system costs as only few external component
(no balun) are required
D
Stand-alone product
D
3-V operation reduces battery count and saves space
Block Diagram
R1
Voltage
regulator
VH
R
V
VS
2
RF
3
P
VH
7
LO 6
GND VS
1
4
8
R25IF
PD
93 7811 e
i
i
S
o
o
Figure 1.
Ordering Information
Extended Type Number Package Remarks
U2795B–CFP SO8 Tube
U2795B–CFPG3 SO8 Taped and reeled
U2795B
Rev . A3, 20–May-992 (10)
Pin Description
1
2
3
45
6
7
8
VS
RFI
P
SOIFO
LOi
PD
94 7890 e
GND
Figure 2. Pinning
Pin Symbol Function
1 VSSupply voltage
2 RFiRF input
3 P Progamming port IP3, CP
4 SOOutput symmetry
5 IFOIF output
6 GND Ground
7 LOiLO input
8 PD Power down
Functional Description
Supply Voltage
The IC is designed for a supply-voltage range of 2.7 V to
5.5 V. As the IC is internally stabilized, the performance
of the circuit is nearly independent of the supply voltage.
Input Impedance
The input impedance, ZRFi, is about 700
W
with an addi-
tional capacitive component. This condition provides the
best noise figure in combination with a matching net-
work.
3rd Order Intercept Point (IP3)
The voltage divider, RP / R1, determinates both the input
and output intercept point, IIP3 and OIP3. If the value of
RP is infinite, the maximum value of IIP3 reachs about
4 dBm. The IP3/RP characteristics are shown in figure 3
and 4.
Output Impedance and Intercept Point
The output impedance is shown in figure 11. Both low
output impedance and a high intercept point are defined
to a high value of RP.
Current Consumption, IS
Depending on the chosen input and output conditions of
the IC, the current consumption, IS, is between 4 mA and
10 mA. The current consumption in dependence of Rp is
shown in figure 6.
Power Down
This feature provides extended battery lifetime. If this
function is not used, Pin 8 has to be connected to VS
(Pin 1).
Output Symmetry
The symmetry of the load current can be matched and
thus optimized for a given load impedance.
Absolute Maximum Ratings
Parameters Symbol Value Unit
Supply voltage Pin 1 VS6 V
Input voltage Pins 2, 3, 7 and 8 VI0 to VSV
Junction temperature Tj125 °C
Storage-temperature range Tstg 40 to +125 °C
Thermal Resistance
Parameters Symbol Value Unit
Junction ambient SO 8 Rthja 175 K/W
Operating Range
Parameters Symbol Value Unit
Supply-voltage range Pin 1 VS2.7 to 5.5 V
Ambient-temperature range Tamb 40 to +85 °C
U2795B
Rev . A3, 20-May-99 3 (10)
Electrical Characteristics
VS = 3 V, fLOi = 1 GHz, IF = 900 MHz, RF = 100 MHz, RP =
R
, system impedance Zo = 50
W
, T amb = 25
°
C, R T = 56
W
reference point Pin 6, unless otherwise specified
Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit
Supply voltage range Pin 1 VS2.7 5.5 V
Typical supply-current
range Pin 1, depending on RPIS411 mA
Maximum supply current Pin 1 IS13 mA
Conversion power gain RL = 50
W
, RT =
R
RL = 50
W
, RT = 56
W
PGC
PGC
9
4dB
dB
Operating frequencies
RFi frequency Pin 2 RFi10 2500 MHz
LOi frequency Pin 7 fLOi 50 2500 MHz
IFo frequency Pin 5 fIFo 50 2500 MHz
Isolation
LO spurious at RFi Pin 7 to 2
PiLO = –10 to 0 dBm ISLO-RF –30 dBm
RFi to LOiPin 2 to 7
PiRF = –25 dBm ISRF-LO 35 dB
LO spurious at IFoPin 7 to 5,
PiLO = –10 to 0 dBm ISLO-IF –25 dBm
IFo to LOiPin 5 to 7 ISIF-LO 30 dB
Output (IF)
Output compression point Pin 5 CPo–10 dBm
Input (RF)
Input impedance Pin 2 ZRFi 700
k
0.8
W
k
pF
Input compression point Pin 2 CPi–14 dBm
3rd-order input
intercept point Pin 2 IIP3 –4 dBm
Input (LO)
LO level Pin 7 PiLO –6 dBm
Voltage standing wave ratio (VSWR)
Input LO Pin 7 VSWRLOi <2
Output IF Pin 4 VSWRIFo <2
Noise performance
Noise figure PiLO = 0 dBm, RT =
R
NF 10 dB
Power-down mode
Supply current Pin 1 VPD < 0.5 V
Pin 1 VPD = 0 V ISPD <5 30
m
A
Power-down voltage
“Power ON” Pin 8 VS = 3.5 to 5.5 V
VS = 2.7 to 3.5 V VPON
VS 0.5
VS
VS +0.5
VS +0.5 V
V
“Power DOWN” Pin 8 VPDN 1 V
Power -down current Pin 8 Power ON
Power DOWN IPON
IPDN
0.15
< 5 mA
m
A
Settling time Pin 8 to 5 tsPD <30
m
s
U2795B
Rev . A3, 20–May-994 (10)
020406080
–10
–9
–8
–7
–6
–4
IIP3 ( dBm )
Rp ( k
W
)
100
94 9235
–5
Figure 3. IIP3 versus resistor Rp, IF: 900 MHz
020406080
–25
–20
–15
–10
–5
0
OIP3 ( dBm )
Rp ( k
W
)
100
94 9236
Figure 4. OIP3 versus resistor Rp, IF: 900 MHz
020406080
–13
–9
–5
–1
3
Gain ( dB )
Rp ( k
W
)
100
94 9237
Figure 5. Gain versus resistor Rp, LO: 1030 MHz,
level –10 dBm; RF: 130 MHz, –30 dBm, RT = 56
W
020406080
0
2
4
6
8
12
I ( mA )
s
Rp ( k
W
)
100
94 9238
10
Figure 6. Supply current IS versus resistor Rp
U2795B
Rev . A3, 20-May-99 5 (10)
0 500 1000 1500 2000
–2
2
6
10
14
18
Gain ( dB )
IF ( MHz )
2500
94 9239
with RF input matching:
Ls=220nH, Cp=4.7pF
without RT
with RT=56
W
Figure 7. Gain versus IF output frequency,
LO level: –6 dBm, RF: 130 MHz, –35 dBm;
parameter: RF input termination
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
0 500 1000 1500 2000 2500
IIP3 ( dBm )
IF ( MHz )94 9240
with RT = 56
W
without RT
with RF input matching:
Ls = 220 nH, Cp = 4.7 pF
Figure 8. IIP3 versus IF output frequency,
LO level: –6 dBm; RF: 130 MHz / 130.1 MHz,
–35 dBm; parameter: RF input termination
0 200 400 600 800
0
2
4
6
8
12
NF ( dB )
IF ( MHz )
94 9241
10
Figure 9. Double sideband noise figure versus IF output fre-
quency; LO: 1000 MHz, level 0 dBm; no RF input matching,
RT left out
100 280 460 640 820
1
2
3
4
5
VSWR
IF Frequency ( MHz )
1000
95 9652
Figure 10. Typical VSWR frequency response
of the IF output, RP =
R
U2795B
Rev . A3, 20–May-996 (10)
–0.2j
–0.5j
–j
–2j
–5j
0
0.2j
0.5j
j
2j
5j
ÁÁ
0.2
ÁÁ
0.5
Á
1
ÁÁ
2
ÁÁ
5
1
94 9473
Figure 11. Typical impedance of the output versus RP at frequency fIFo = 900 MHz
markers (from left to right): RP =
R
/ 22 k
W
/ 10 k
W
/ 8.2 k
W
/ 5.6 k
W
–0.2j
–0.5j
–j
–2j
–5j
0
0.2j
0.5j
j
2j
5j
ÁÁ
0.2
ÁÁ
0.5
Á
1
Á
2
Á
5
1
95
9651
Figure 12. Typical S11 frequency response of the IF output, RP =
R
,
IF frequency from 100 MHz to 1000 MHz, marker: 900 MHz
U2795B
Rev . A3, 20-May-99 7 (10)
–0.2j
–0.5j
–j
–2j
–5j
0
0.2j
0.5j
j
2j
5j
ÁÁ
0.2
ÁÁ
0.5
Á
1
ÁÁ
2
ÁÁ
5
1
95 9653
Figure 13. Typical S11 frequency response of the RF intput, RP =
R
, RT =
R
RF frequency from 100 MHz to 1000 MHz, marker: 900 MHz
–0.2j
–0.5j
–j
–2j
–5j
0
0.2j
0.5j
j
2j
5j
ÁÁ
ÁÁ
0.2
ÁÁ
ÁÁ
0.5
Á
Á
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
1
95 9654
Figure 14. Typical S11 frequency response of the LO intput, RP =
R
,
LO frequency from 100 MHz to 1000 MHz, marker: 900 MHz
U2795B
Rev . A3, 20–May-998 (10)
Application
94 8511
1
2
3
4
U2795B
VS8
7
6
5
C2
RP
C1
C5
C4
PD
RT
C6
RSO
C3
RF
C7
LO
IF
RI
Figure 15.
Part List
C 1 10 nF
C2, C3, C4, C5, C6, C7 100 pF
*RP50-
W
Microstrip
*RSO 68
W
optional
RT56
W
If the part-list values are used, the PD settling time is
t
20
m
s. Using other values, time requirements in burst-mode
applications have to be considered.
The values of RSO and RP depend on the input and output
condition requirements. For RSO, 68
W
is recommended.
By means of the optional RI, the intercept and compres-
sion point can be slightly increased; values between
500
W
and 1 k
W
are suitable. Please note that such modi-
fication will also increase the supply current.
Application Circuit (Evaluation Board)
94 8512
Figure 16.
95 9697
Figure 17.
U2795B
Rev . A3, 20-May-99 9 (10)
Package Information
13034
technical drawings
according to DIN
specifications
Package SO8
Dimensions in mm 5.00
4.85
0.4
1.27 3.81
1.4
0.25
0.10
5.2
4.8
3.7
3.8
6.15
5.85
0.2
85
14
U2795B
Rev . A3, 20–May-9910 (10)
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1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
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ozone depleting substances (ODSs).
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forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
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2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
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substances and do not contain such substances.
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such unintended or unauthorized use.
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Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423