SEMiX®3s
Trench IGBT Modules
SEMiX 253GB176HDs
Preliminary Data
Features
 
  
   
 
   !
Typical Applications
"  #
$%
 #
Remarks
  !  # &
'(((   
  # &
')((
GB
Absolute Maximum Ratings )*+,    #
Symbol Conditions Values Units
IGBT
 '-((
. )* 0( + )*( '0( "
.12 '  3(( "
4 5 )(
6,  7%1".78 9  : ;( <<< = '*( ')* +
 ", ' < ;(((
Inverse diode
.> )* 0( + );( '-( "
.>12 '  3(( "
.>2 '( ? <? 6 )* + '*(( "
Characteristics )*+,    #
Symbol Conditions min. typ. max. Units
IGBT
4 4 , . @ " *,) *,0 @,;
. 4 (,  , 6 )* ')* + ' "
7 6 )* ')* + ' (,A ',) ','
 4 '* , 6 )* ')* + @,- '(,3 0,3 ') B
 . '*( ", 4 '* ,
6 )* ')* +,  
) ),;* ),;* ),A
 #  # ') >
 4 (,  )* , ' 2C (,* >
 (,; >
D )( 
1E=E :, )* ')* + (,- ' B
#F ')(( , . '*( " 'A( F ;* 
# F 4 5 '* 03( F '3( 
  14 14 A,) B, 6 ')* + A* ** G
Inverse diode
>  .> '*( "? 4 (?6 )* ')*
+,  
',- ',- ',A ',A
7 6 )* ')* + ',' (,A ',3 ','
6 )* ')* + ; *,3 ; *,3 B
.112 .> '*( "? 6 )* ')* + )3( "
H #F# 3;(( "FI *0 I
 4 :'* 3* G
Thermal characteristics
16:  .4J (,') KFL
16:M  . M# (,'- KFL
16:>M  >LM KFL
1:  # (,(; KFL
Temperature sensor
1)* )* + * 5*N OP
J)*F0* 1)1'QRJ'F):'F'S ? RKS?J 3;)( K
Mechanical data
2F2 O 2* F   2@ 3F),* * F* 8
)0A
SEMiX 253GB176HDs
1 05-04-2006 GES © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SEMiX 253GB176HDs
2 05-04-2006 GES © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward charact., incl. RCC´+EE´ Fig. 12 Typ. CAL diode peak reverse recovery current
SEMiX 253GB176HDs
3 05-04-2006 GES © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
 2T 3
4J  2T 3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SEMiX 253GB176HDs
4 05-04-2006 GES © by SEMIKRON