TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
1
High Power Ka-Band SPDT Switch
TGS4302
Key Features and Performance
•
27 -
46 GHz Frequency Range
•
> 33 dBm Input P1dB @ VC = 7.5V
•
On Chip Biasing Resistors
•
On Chip DC Blocks
•
< 0.9 dB Typical Insertion Loss
•
< 4ns Switching Speed
•
VPIN Technology
•
Chip Dimensions:
1.09 x 1.09 x 0.10 mm
(0.043 x 0.043 x 0.004 inches)
Description
The TriQuint TGS4302 is a GaAs
single-
pole, double-throw (SPDT) PIN mono-
lithic
switch designed to operate over the
Ka-Band frequency range. This switch
maintains a low insertion loss with high
power handling of 33dBm or greater
input P1dB at VC
= 7.5V. These
advantages, along with the small size of
the chip, make the TGS4302 ideal for
use in communication and
transmit/receive applications.
Primary Applications
•
Ka-Band Transmit / Receive
•
Point-to-Point Radio
•
Point-to-Multipoint Radio
Preliminary Data
VA
= +5V, IA
≈
0mA,
VB
= -5V, IB
= 20mA
-4
-3
-2
-1
0
25 30 35 40 45 50
Frequency (GHz)
Gain (dB)
-30
-20
-10
0
10
Return Loss / Isolation (dB)
S21 S13
S11 S22
Note: This device is early in the characterization process prior
to finalizing all electrical and process specifications. Specifications are subject
to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
2
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value Notes
V
C
Control Voltage -5V to +25V 2/, 3/
I
C
Control Current 22.5 mA 2/ 3/
P
IN
Input Continuous Wave Power 37 dBm 3/
T
M
Mounting Temperature (30 Seconds) 320
0
C 4/, 5/
T
STG
Storage Temperature -65 to 150
0
C
1/ These ratings represent the maximum operable values for this device.
2/ V
C
and I
C
are both per bias pad.
3/ Operation above 30dBm requires control voltages above +5V.
4/ When operated at this bias condition with a base plate temperature of 70
0
C, the
median life is TBD hours.
5/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels
TGS4302
TABLE II
DC PROBE TEST
(TA = 25 °C, Nominal)
LIMITS
NOTES SYMBOL
MIN MAX
UNITS
RFWD 3.5 6 Ω
VREV -30 -60 V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
3
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25°C, Nominal)
(V
A
= +5V, I
A
= 0mA, V
B
= -5V, I
B
= 20mA)
Symbol Parameter Test Conditions Typ Units Notes
IL Insertion Loss
F = 27 – 30 GHz
F = 30 – 40 GHz
F = 40 – 46 GHz
1.3
0.9
1.3
dB
RL Return Loss F = 27 – 46 GHz 10 dB
P1dB
Output Power @
1dB Gain
Compression
V
C
= +5V
V
C
= +7.5V
V
C
= +10V
V
C
= +15V
31
33
35
36
dBm 1/
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Frequency = 30GHz
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
4
Preliminary Data
IA
= 0mA, VB
= -5V, IB
= 20mA
-4
-3
-2
-1
0
25 30 35 40 45 50
Frequency (GHz)
Gain (dB)
-30
-20
-10
0
10
Return Loss / Isolation (dB)
S21 S31
S11 S22
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
5
Preliminary Data
IA
= 0mA, VB
= -5V, IB
= 20mA, F = 30GHz
Data includes Fixture / connector losses of ~ 1 dB
TGS4302
-3
-2.5
-2
-1.5
-1
18 20 22 24 26 28 30 32 34 36 38
Pin (dBm)
Gain (dB)
Va = +5V
Va = +7.5V
Va = +10V
Va = +15V
Va = +20V
Va = +25V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
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Operation at RF power levels >30 dBm requires increasing the positive
voltage level to put a larger reverse bias on the diodes while the negative
voltage level remains at -5 V with a current of approximately 20mA.
Bond pads IA and IB bypass the on-chip series resistors to allow adjustment
of the current to the diodes in their forward biased state.
TABLE IV
TRUTH TABLE
Selected RF
Output VAVB
RF Out A ≥ +5V @
~0mA
-5V @
20mA
RF Out B -5V @
20mA
≥ +5V @
~0mA
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
7
Mechanical Drawing TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
8
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
9
Alternate Chip Assembly & Bonding Diagram
Refer to Table V for values of R vs. control voltage
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
10
TABLE V
BIAS RESISTOR VALUES
Maximum
Negative Bias
Voltage
R
-5V 190 Ohms
-7.5V 315 Ohms
-10V 440 Ohms
-15V 690 Ohms
-20V 940 Ohms
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
May 2, 2008
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
Assembly Process Notes
TGS4302
