AO4292E 100V N-Channel MOSFET General Description Product Summary VDS * Trench Power MV MOSFET technology * Low RDS(ON) * Low Gate Charge * Optimized for fast-switching applications * ESD protected * RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 100V 8A RDS(ON) (at VGS=10V) < 23m RDS(ON) (at VGS=4.5V) < 33m Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested * Synchronus Rectification in DC/DC and AC/DC Converters * Industrial and Motor Drive applications SOIC-8 Top View D D D Bottom View D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4292E SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25C Avalanche energy L=0.1mH VDS Spike 10s TA=25C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.1.0: August 2015 Steady-State Steady-State A IAS 14 A EAS 10 mJ VSPIKE 120 V 3.1 W 2.0 TJ, TSTG Symbol t 10s V 32 PD TA=70C 20 6.2 IDM Avalanche Current C Units V 8 ID TA=70C C Maximum 100 RJA RJL -55 to 150 Typ 31 59 16 www.aosmd.com C Max 40 75 24 Units C/W C/W C/W Page 1 of 5 AO4292E Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C 1.6 10 A 2.15 2.7 V 18.5 23 33 42 23.5 33 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125C VGS=4.5V, ID=6A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 VGS=10V, ID=8A Coss Units V VDS=100V, VGS=0V IDSS Max m m S 1 V 4 A 1200 VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) 0.5 pF 93 pF 6.3 pF 1.0 1.5 16.5 25 nC 8 14 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 3.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime 22 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=8A VGS=10V, VDS=50V, RL=6.25, RGEN=3 3 ns IF=8A, dI/dt=500A/s 20 Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s 80 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2015 www.aosmd.com Page 2 of 5 AO4292E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 4V 10V VDS=5V 4.5V 30 30 6V ID(A) ID (A) 3.5V 20 20 125C 25C 10 10 VGS=3V 0 0 0 1 2 3 4 1 5 2 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 2.2 VGS=4.5V 25 RDS(ON) (m) 3 20 VGS=10V 15 2 VGS=10V ID=8A 1.8 1.6 1.4 1.2 VGS=4.5V ID=6A 1 0.8 10 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 60 1.0E+01 ID=8A 1.0E+00 125C 1.0E-01 40 IS (A) RDS(ON) (m) 50 125C 1.0E-02 30 25C 1.0E-03 20 1.0E-04 25C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: August 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4292E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=50V ID=8A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 200 0 Coss Crss 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 60 1000 TJ(Max)=150C TA=25C 10s 10s RDS(ON) limited 100s Power (W) ID (Amps) 100 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 80 1ms 1.0 10ms 10 TJ(Max)=150C TA=25C 0.1 100 DC 0.0 0.01 0.1 1 10 VDS (Volts) 100 1 0.0001 0.001 1000 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=75C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2015 www.aosmd.com Page 4 of 5 AO4292E Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5